公开(公告)号：US20190270636A1

公开(公告)日：2019-09-05

申请号：US16287227

申请日：2019-02-27

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: B81B7/00 ,  H01L23/055 ,  H01L23/10 ,  H01L23/00 ,  H01L21/48 ,  B81C1/00 ,  G01N29/24

Abstract: A packaged semiconductor device comprises a semiconductor chip and a semiconductor package. The semiconductor package comprises: a metal carrier, wherein the semiconductor chip is arranged on a main surface of the metal carrier, a metal cap arranged on the main surface of the metal carrier, wherein the metal carrier and the metal cap form a cavity, wherein the semiconductor chip is arranged within the cavity, a connection conductor extending from the main surface of the metal carrier to a main surface of the semiconductor package through the metal carrier, wherein the connection conductor is electrically insulated from the metal carrier and is electrically connected to the semiconductor chip, and a connecting material arranged on a first region of the connection conductor and serving for electrically and mechanically connecting the connection conductor to an external printed circuit board, wherein at least that part of the connection conductor which extends from the main surface of the metal carrier as far as the first region of the connection conductor is formed in integral fashion.

公开(公告)号：US10304795B2

公开(公告)日：2019-05-28

申请号：US15682747

申请日：2017-08-22

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Markus Schaller ,  Franz-Peter Kalz

IPC: H01L29/82 ,  H01L23/00 ,  H01L27/22 ,  G01R33/00 ,  H01L23/495 ,  H01L23/60

Abstract: A semiconductor device includes a substrate, a semiconductor die, and an antistatic die attach material between the substrate and the semiconductor die. The antistatic die attach material includes a mixture of a nonconductive adhesive material and carbon black or graphite. In one example, the antistatic die attach material has a resistivity between 101 Ω·cm and 1010 Ω·cm.

公开(公告)号：US20170356968A1

公开(公告)日：2017-12-14

申请号：US15176240

申请日：2016-06-08

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Goran Keser ,  Manuel Harrant

IPC: G01R33/07 ,  H01L25/04 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12 ,  G01R33/09

CPC classification number: G01R33/07 ,  G01R33/09 ,  H01L25/04 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/12

Abstract: A chip package, a chip package system, a method of manufacturing a chip package, and a method of operating a chip package including: a first sensor configured to measure a magnetic field component up to a maximum magnetic field value; a second sensor configured to measure the magnetic field component beyond the maximum magnetic field value; and a circuit coupled to the first sensor and the second sensor and configured to receive at least one sensor signal from at least one of the first sensor and the second sensor, wherein the circuit is further configured to select the first sensor or the second sensor to measure the magnetic field component based on the received sensor signal.

公开(公告)号：US11899047B1

公开(公告)日：2024-02-13

申请号：US18047479

申请日：2022-10-18

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01R15/20 ,  G01R19/10

CPC classification number: G01R15/202 ,  G01R19/10

Abstract: A current sensor system includes a magnetic field sensor including a chip plane, a first set of sensor elements sensitive to a first magnetic field component that is aligned in a first direction that is parallel to the chip plane, and a second set of sensor elements sensitive to a second magnetic field component that is aligned in a second direction that is perpendicular to the chip plane; and three conductor structures arranged in parallel to each other and configured to carry a current parallel or antiparallel to a third direction that is perpendicular to the first direction and to the second direction. The three conductor structures generate three magnetic fields based on the current flowing therethrough, where the three magnetic fields produce a first magnetic field distribution of the first magnetic field component and a second magnetic field distribution of the second magnetic field component.

公开(公告)号：US11795053B2

公开(公告)日：2023-10-24

申请号：US17217488

申请日：2021-03-30

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Klaus Elian ,  Horst Theuss

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0051 ,  B81C1/00325 ,  B81B2203/033 ,  B81B2207/07 ,  B81B2207/096 ,  B81C2203/0118

Abstract: A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

公开(公告)号：US11686667B2

公开(公告)日：2023-06-27

申请号：US17407803

申请日：2021-08-20

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01N21/17 ,  G01N29/24 ,  B81B7/02

CPC classification number: G01N21/1702 ,  B81B7/02 ,  G01N29/2425 ,  B81B2201/0264 ,  B81B2201/04 ,  B81B2203/0315 ,  G01N2021/1704

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

公开(公告)号：US20230038134A1

公开(公告)日：2023-02-09

申请号：US17874834

申请日：2022-07-27

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: G01L19/14 ,  G01L19/00 ,  B81B7/00 ,  G01L19/06

Abstract: In the following, a sensor assembly is described. According to an exemplary embodiment, the sensor assembly has a housing enclosing a pressure chamber filled with a medium, the housing having a first housing part and a second housing part, the first housing part being connected to the second housing part to seal the pressure chamber in a pressure-tight manner A sensor chip is arranged in the pressure chamber, substantially surrounded by the medium, and configured to measure a pressure of the medium. The sensor assembly also includes a plurality of connection pins which are fed through the first housing part (carrier) by pressure-tight bushings and which are electrically connected to the sensor chip. The sensor assembly also has stress relieving structures which are configured to mechanically decouple the first housing part and a pressure-sensitive element of the sensor chip.

公开(公告)号：US11444007B2

公开(公告)日：2022-09-13

申请号：US16907739

申请日：2020-06-22

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller

IPC: H01L23/495 ,  H01L25/065 ,  H01L23/31

Abstract: A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

公开(公告)号：US20220260538A1

公开(公告)日：2022-08-18

申请号：US17585723

申请日：2022-01-27

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Matthias Eberl ,  Franz Jost

IPC: G01N33/00 ,  H01M8/0444

Abstract: A gas sensor includes a hollow space, a gas permeation structure which is arranged between the hollow space and the exterior space and contains a selectively gas-permeable element, wherein the hollow space is hermetically sealed with the exception of the gas permeation structure, and one or more sensor elements which are configured for detecting the presence of one or more gases in the hollow space.

公开(公告)号：US11255824B2

公开(公告)日：2022-02-22

申请号：US16184412

申请日：2018-11-08

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Horst Theuss

IPC: G01N29/02 ,  G01N29/24

Abstract: The present disclosure is related to a photoacoustic sensor modular assembly. An example interconnect module includes a support structure configured to be situated between an emitter module of the photoacoustic sensor and a detector module of the photoacoustic sensor. The emitter module may include an emitter component and the detector module may include a detector component. The interconnect module may include a conductive element configured to connect to at least one of the emitter component or the detector component.