公开(公告)号：US07365324B2

公开(公告)日：2008-04-29

申请号：US11378465

申请日：2006-03-20

申请人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

发明人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC分类号： G21K7/00 ,  G21N23/99 ,  G01N23/225 ,  H01J37/28

CPC分类号： H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

摘要翻译： 提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。 用于检查基板的表面的检查装置产生从电子束源25.1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。 当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。 产生电子束，使照度不均匀为10％以下。 由检测器25.11检测从样品W发射的电子。

公开(公告)号：US07297949B2

公开(公告)日：2007-11-20

申请号：US11528595

申请日：2006-09-28

申请人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

发明人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC分类号： H01J37/26 ,  H01J37/28

CPC分类号： G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

摘要翻译： 检查装置及使用该检查装置的半导体装置的制造方法。 检查装置用于诸如晶片的样品的缺陷检查，线宽测量，表面电位测量等。 在检查装置中，多个带电粒子从初级光学系统传送到样品，从样品发射的二次带电粒子与主光学系统分离，并通过二次光学系统引入到检测器。 在移动样品的同时进行带电粒子的照射。 带电粒子的照射点沿着样品的移动方向排列成N行，沿着与其垂直的方向排列成M列。 带电粒子的每一列照射点在垂直于样品的移动方向的方向上连续移动预定量。

公开(公告)号：US20070194235A1

公开(公告)日：2007-08-23

申请号：US11783780

申请日：2007-04-12

申请人： Toshifumi Kimba ,  Tohru Satake ,  Tsutomu Karimata ,  Kenji Watanabe ,  Nobuharu Noji ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Shin Oowada ,  Mutsumi Saito

发明人： Toshifumi Kimba ,  Tohru Satake ,  Tsutomu Karimata ,  Kenji Watanabe ,  Nobuharu Noji ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Shin Oowada ,  Mutsumi Saito

IPC分类号： G01N23/00

CPC分类号： H01J37/222 ,  G01N23/225 ,  G01N23/2251 ,  H01J37/06 ,  H01J37/073 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0216 ,  H01J2237/082 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2813 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01L2224/48227 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00

摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

摘要翻译： 本发明的基板检查装置1-1（图1）执行以下步骤：将要检查的基板“S”运送到检查室23-1中; 在所述检查室中保持真空; 将所述检查室与振动隔离; 通过至少一个自由度的阶段26-1连续地移动所述衬底; 照射具有指定宽度的电子束; 帮助所述电子束经由一次电子光学系统10-1到达所述衬底的表面; 通过二次电子光学系统20-1捕获从所述衬底发射的二次电子并将其引导到检测系统35-1; 基于由所述检测系统获得的二次电子束的检测信号，在图像处理系统中形成二次电子图像; 基于由所述图像处理系统形成的二次电子图像检测所述基板中的缺陷位置; 通过CPU37-1指示和/或存储所述衬底中的所述缺陷位置; 并将完全检查的基板从检查室中取出。 因此，可以以高水平的精度和效率以及更高的生产量连续地执行基板上的缺陷检查。

公开(公告)号：US20070057186A1

公开(公告)日：2007-03-15

申请号：US11528595

申请日：2006-09-28

申请人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

发明人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC分类号： G21K7/00

CPC分类号： G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

公开(公告)号：US07138629B2

公开(公告)日：2006-11-21

申请号：US10754623

申请日：2004-01-12

申请人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

发明人： Nobuharu Noji ,  Tohru Satake ,  Hirosi Sobukawa ,  Toshifumi Kimba ,  Masahiro Hatakeyama ,  Shoji Yoshikawa ,  Takeshi Murakami ,  Kenji Watanabe ,  Tsutomu Karimata ,  Kenichi Suematsu ,  Yutaka Tabe ,  Ryo Tajima ,  Keiichi Tohyama

IPC分类号： G21K7/00 ,  G21N23/99 ,  H01J37/28 ,  G01N23/225

CPC分类号： H01J37/20 ,  G01N23/2204 ,  G01N23/225 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/202 ,  H01J2237/2441 ,  H01J2237/2446 ,  H01J2237/2801 ,  H01J2237/2817 ,  H01L21/6833 ,  H01L2223/54466

摘要： A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25•1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

摘要翻译： 提供了一种用于进一步提高速度的系统，即提高SEM型检查装置中的生产量。 用于检查基板的表面的检查装置产生从电子束源25.1发射的电子的交叉，然后在样品W的方向上以期望的倍率形成图像以产生交叉。 当交叉通过时，作为噪声的电子从具有孔的交叉点移除，进行调整，使得交叉成为平行电子束以以期望的分段形式照射基板。 产生电子束，使照度不均匀为10％以下。 由检测器25.11检测从样品W发射的电子。

公开(公告)号：US07135676B2

公开(公告)日：2006-11-14

申请号：US09891611

申请日：2001-06-27

申请人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

发明人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Muneki Hamashima ,  Toru Takagi

IPC分类号： H01J37/28

CPC分类号： G03F7/70616 ,  G01N23/225 ,  H01J37/05 ,  H01J37/06 ,  H01J37/073 ,  H01J37/075 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/226 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0435 ,  H01J2237/057 ,  H01J2237/06316 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/2446 ,  H01J2237/24485 ,  H01J2237/24564 ,  H01J2237/248 ,  H01J2237/2482 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

摘要： An inspection apparatus and a semiconductor device manufacturing method using the same. The inspection apparatus is used for defect inspection, line width measurement, surface potential measurement or the like of a sample such as a wafer. In the inspection apparatus, a plurality of charged particles is delivered from a primary optical system to the sample, and secondary charged particles emitted from the sample are separated from the primary optical system and introduced through a secondary optical system to a detector. Irradiation of the charged particles is conducted while moving the sample. Irradiation spots of the charged particles are arranged by N rows along a moving direction of the sample and by M columns along a direction perpendicular thereto. Every row of the irradiation spots of the charged particles is shifted successively by a predetermined amount in a direction perpendicular to the moving direction of the sample.

公开(公告)号：US20060138343A1

公开(公告)日：2006-06-29

申请号：US11360704

申请日：2006-02-24

申请人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Shoji Yoshikawa

发明人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Tsutomu Karimata ,  Shin Oowada ,  Mutsumi Saito ,  Shoji Yoshikawa

IPC分类号： G21K5/10

CPC分类号： G01N23/225 ,  H01J37/06 ,  H01J37/073 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

摘要： An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system; specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.

摘要翻译： 诸如基于片材束的测试装置的电子束装置具有电子光学系统，用于用来自电子束源的一次电子束照射待测物体，并且投射通过照射的二次电子束的图像 一次电子束和用于检测由电子 - 光学系统投影的二次电子束图像的检测器; 具体地，电子束装置包括用于照射具有特定宽度的电子束的光束产生装置2004，用于引导光束到达待测基板2006的表面的初级电子 - 光学系统2001，二次电子光学系统2002 用于捕获从衬底2006产生的二次电子并将它们引入到图像处理系统2015中，用于以等于至少一个的连续自由度可移动地保持衬底2006的阶段2003，用于衬底2006的测试室，衬底 用于将基板2006输送到测试室中的传送机构，用于检测基板2006上的缺陷的图像处理分析器2015，用于测试室的隔振机构，用于将测试室保持在真空的真空系统，以及 用于在基板2006上显示或存储缺陷位置的控制系统2017。

公开(公告)号：US07049585B2

公开(公告)日：2006-05-23

申请号：US09891612

申请日：2001-06-27

申请人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Tsutomu Karimata ,  Shin Oowada ,  Shoji Yoshikawa ,  Mutsumi Saito

发明人： Mamoru Nakasuji ,  Nobuharu Noji ,  Tohru Satake ,  Toshifumi Kimba ,  Hirosi Sobukawa ,  Tsutomu Karimata ,  Shin Oowada ,  Shoji Yoshikawa ,  Mutsumi Saito

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  H01J37/06 ,  H01J37/073 ,  H01J37/185 ,  H01J37/20 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/082 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2816 ,  H01J2237/2817

摘要： An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system. Specifically, the electron beam apparatus comprises beam generating means 2004 for irradiating an electron beam having a particular width, a primary electron-optical system 2001 for leading the beam to reach the surface of a substrate 2006 under testing, a secondary electron-optical system 2002 for trapping secondary electrons generated from the substrate 2006 and introducing them into an image processing system 2015, a stage 2003 for transportably holding the substrate 2006 with a continuous degree of freedom equal to at least one, a testing chamber for the substrate 2006, a substrate transport mechanism for transporting the substrate 2006 into and out of the testing chamber, an image processing analyzer 2015 for detecting defects on the substrate 2006, a vibration isolating mechanism for the testing chamber, a vacuum system for holding the testing chamber at a vacuum, and a control system 2017 for displaying or storing positions of defects on the substrate 2006.

摘要翻译： 诸如基于片材束的测试装置的电子束装置具有电子光学系统，用于用来自电子束源的一次电子束照射待测物体，并且投射通过照射的二次电子束的图像 一次电子束和用于检测由电子 - 光学系统投影的二次电子束图像的检测器。 具体地，电子束装置包括用于照射具有特定宽度的电子束的光束产生装置2004，用于引导光束到达待测基板2006的表面的初级电子 - 光学系统2001，二次电子光学系统2002 用于捕获从衬底2006产生的二次电子并将它们引入到图像处理系统2015中，用于以等于至少一个的连续自由度可移动地保持衬底2006的阶段2003，用于衬底2006的测试室，衬底 用于将基板2006输送到测试室中的传送机构，用于检测基板2006上的缺陷的图像处理分析器2015，用于测试室的隔振机构，用于将测试室保持在真空的真空系统，以及 用于在基板2006上显示或存储缺陷位置的控制系统2017。

公开(公告)号：US20050121611A1

公开(公告)日：2005-06-09

申请号：US11037084

申请日：2005-01-19

申请人： Toshifumi Kimba ,  Tohru Satake ,  Tsutomu Karimata ,  Kenji Watanabe ,  Nobuharu Noji ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Shin Oowada ,  Mutsumi Saito

发明人： Toshifumi Kimba ,  Tohru Satake ,  Tsutomu Karimata ,  Kenji Watanabe ,  Nobuharu Noji ,  Takeshi Murakami ,  Masahiro Hatakeyama ,  Mamoru Nakasuji ,  Hirosi Sobukawa ,  Shoji Yoshikawa ,  Shin Oowada ,  Mutsumi Saito

IPC分类号： G01N23/225 ,  G01Q30/02 ,  H01J37/06 ,  H01J37/073 ,  H01J37/18 ,  H01J37/20 ,  H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  G01N23/00 ,  G21K7/00

CPC分类号： H01J37/222 ,  G01N23/225 ,  G01N23/2251 ,  H01J37/06 ,  H01J37/073 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0216 ,  H01J2237/082 ,  H01J2237/2002 ,  H01J2237/2007 ,  H01J2237/202 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/22 ,  H01J2237/24564 ,  H01J2237/2806 ,  H01J2237/2813 ,  H01J2237/2816 ,  H01J2237/2817 ,  H01L2224/48227 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01057 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/3025 ,  H01L2924/00

摘要： A substrate inspection apparatus 1-1 (FIG. 1) of the present invention performs the following steps of: carrying a substrate “S” to be inspected into an inspection chamber 23-1; maintaining a vacuum in said inspection chamber; isolating said inspection chamber from a vibration; moving successively said substrate by means of a stage 26-1 with at least one degree of freedom; irradiating an electron beam having a specified width; helping said electron beam reach to a surface of said substrate via a primary electron optical system 10-1; trapping secondary electrons emitted from said substrate via a secondary electron optical system 20-1 and guiding it to a detecting system 35-1; forming a secondary electron image in an image processing system based on a detection signal of a secondary electron beam obtained by said detecting system; detecting a defective location in said substrate based on the secondary electron image formed by said image processing system; indicating and/or storing said defective location in said substrate by CPU 37-1; and taking said completely inspected substrate out of the inspection chamber. Thereby, the defect inspection on the substrate can be performed successively with high level of accuracy and efficiency as well as with higher throughput.

摘要翻译： 本发明的基板检查装置1-1（图1）执行以下步骤：将要检查的基板“S”运送到检查室23-1中; 在所述检查室中保持真空; 将所述检查室与振动隔离; 通过至少一个自由度的阶段26-1连续地移动所述衬底; 照射具有指定宽度的电子束; 帮助所述电子束经由一次电子光学系统10-1到达所述衬底的表面; 通过二次电子光学系统20-1捕获从所述衬底发射的二次电子并将其引导到检测系统35-1; 基于由所述检测系统获得的二次电子束的检测信号，在图像处理系统中形成二次电子图像; 基于由所述图像处理系统形成的二次电子图像检测所述基板中的缺陷位置; 通过CPU37-1指示和/或存储所述衬底中的所述缺陷位置; 并将完全检查的基板从检查室中取出。 因此，可以以高水平的精度和效率以及更高的生产量连续地执行基板上的缺陷检查。

公开(公告)号：US06657737B2

公开(公告)日：2003-12-02

申请号：US09733927

申请日：2000-12-12

申请人： Toshifumi Kimba ,  Shunsuke Nakai

发明人： Toshifumi Kimba ,  Shunsuke Nakai

IPC分类号： G01B1106

CPC分类号： G01B11/0683

摘要： A film thickness measuring method and apparatus sets forth a spectral reflectance ratio S(&lgr;) at a spot where the film to be measured is present and a spectral reflectance ratio R(&lgr;) at a spot where the film to be measured is not present are measured to determine a spectral reflectance ratio Rmeas(&lgr;)=S(&lgr;)/R(&lgr;). A theoretical value Rcalc(&lgr;) of the spectral reflectance ratio at an assumed film thickness d is determined, and an evaluation value Ed is determined from the total sum of differences between the value of Rmeas(&lgr;) and the value of Rcalc(&lgr;). Assuming that the spectral reflectance ratio Rmeas(&lgr;e) of the film is 1 (Rmeas(&lgr;e)=1), an evaluation value Enewd is determined. The film thickness d is changed to determine an evaluation function Enew(d). An evaluation function ratio PE(d) is determined from E(d)/Enew(d), and a film thickness d that gives a minimum value of the ratio PE(d) is determined to be a measured film thickness D.

摘要翻译： 薄膜厚度测量方法和装置提出了存在待测膜的点处的光谱反射率S（λ）和在不存在待测膜的点处的光谱反射率R（λ） 测量以确定光谱反射率Rmeas（λ）= S（λ）/ R（λ）。 确定假定膜厚度d处的光谱反射率比的理论值Rcalc（λ），并且根据Rmeas（λ）的值和Rcalc（λ）的值之间的差的总和来确定评估值Ed， 。 假设膜的光谱反射率Rmeas（lambdae）为1（Rmeas（lambdae）= 1），则确定评价值Enewd。 改变膜厚度d以确定评价函数Enew（d）。 根据E（d）/ Enew（d）求出评价函数比PE（d），将作为PE（d）的比率的最小值的膜厚d确定为测定的膜厚D.