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41.发明授权Image sensor including spatially different active and dark pixel interconnect patterns 有权图像传感器包括空间不同的有源和暗像素互连图案公开(公告)号：US07537951B2
公开(公告)日：2009-05-26
申请号：US11560019
申请日：2006-11-15
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14632 , H01L27/14645 , H01L27/14687
摘要： An interconnect layout, an image sensor including the interconnect layout and a method for fabricating the image sensor each use a first electrically active physical interconnect layout pattern within an active pixel region and a second electrically active physical interconnect layout pattern spatially different than the first electrically active physical interconnect layout pattern within a dark pixel region. The second electrically active physical interconnect layout pattern includes at least one electrically active interconnect layer interposed between a light shield layer and a photosensor region aligned therebeneath, thus generally providing a higher wiring density. The higher wiring density within the second layout pattern provides that that the image sensor may be fabricated with enhanced manufacturing efficiency and a reduction of metallization levels.
摘要翻译： 互连布局，包括互连布局的图像传感器和用于制造图像传感器的方法各自使用有源像素区域内的第一电活性物理互连布局图案和在空间上不同于第一电活动的第二电活动物理互连布局图案 物理互连布局图案在暗像素区域内。 第二电活动物理互连布局图案包括插入在遮光层和在其下对准的光电传感器区域之间的至少一个电活动互连层，因此通常提供更高的布线密度。 在第二布局图案中更高的布线密度提供了图像传感器可以制造成具有增强的制造效率和金属化水平的降低。
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公开(公告)号：US08409899B2
公开(公告)日：2013-04-02
申请号：US13025681
申请日：2011-02-11
IPC分类号： H01L29/72
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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公开(公告)号：US20110129955A1
公开(公告)日：2011-06-02
申请号：US13025681
申请日：2011-02-11
IPC分类号： H01L31/0232
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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公开(公告)号：US20100230729A1
公开(公告)日：2010-09-16
申请号：US12538194
申请日：2009-08-10
IPC分类号： H01L27/148 , H01L27/146 , H01L31/0216 , H01L21/30 , G06F17/50
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14623 , H01L27/1464
摘要： CMOS image sensor pixel sensor cells, methods for fabricating the pixel sensor cells and design structures for fabricating the pixel sensor cells are designed to allow for back side illumination in global shutter mode by providing light shielding from back side illumination of at least one transistor within the pixel sensor cells. In a first particular generalized embodiment, a light shielding layer is located and formed interposed between a first semiconductor layer that includes a photoactive region and a second semiconductor layer that includes the at least a second transistor, or a floating diffusion, that is shielded by the light blocking layer. In a second generalized embodiment, a thin film transistor and a metal-insulator-metal capacitor are used in place of a floating diffusion, and located shielded in a dielectric isolated metallization stack over a carrier substrate
摘要翻译： CMOS图像传感器像素传感器单元，用于制造像素传感器单元的方法和用于制造像素传感器单元的设计结构被设计成允许在全局快门模式中进行背面照明，通过提供来自至少一个晶体管的背面照明的光屏蔽 像素传感器单元。 在第一特定广义实施例中，遮光层位于包括光活性区的第一半导体层和包括至少第二晶体管的第二半导体层之间并形成，或者浮置扩散部被屏蔽 遮光层。 在第二广义实施例中，使用薄膜晶体管和金属 - 绝缘体 - 金属电容器代替浮动扩散，并且被定位在载体衬底上的电介质隔离金属化堆叠中
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公开(公告)号：US20090302406A1
公开(公告)日：2009-12-10
申请号：US12132875
申请日：2008-06-04
CPC分类号： H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14636
摘要： A plurality of image sensor structures and a plurality of methods for fabricating the plurality of image sensor structures provide for inhibited cracking and delamination of a lens capping layer with respect to a planarizing layer within the plurality of image sensor structures. Particular image sensor structures and related methods include at least one dummy lens layer of different dimensions than active lens layer located over a circuitry portion of a substrate within the particular image sensor structures. Additional particular image sensor structures include at least one of an aperture within the planarizing layer and a sloped endwall of the planarizing layer located over a circuitry portion within the particular image sensor structures.
摘要翻译： 多个图像传感器结构和用于制造多个图像传感器结构的多种方法提供了相对于多个图像传感器结构内的平坦化层的透镜封盖层的抑制性破裂和分层。 特定的图像传感器结构和相关方法包括与位于特定图像传感器结构内的衬底的电路部分之上的有源透镜层不同的至少一个虚拟透镜层。 另外特定的图像传感器结构包括平坦化层内的孔径和位于特定图像传感器结构内的电路部分上方的平坦化层的倾斜端壁中的至少一个。
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46.发明授权公开(公告)号：US08704325B2
公开(公告)日：2014-04-22
申请号：US13611423
申请日：2012-09-12
IPC分类号： H01L21/22
CPC分类号： H01L27/14607 , H01L27/14689
摘要： CMOS pixel sensors with multiple pixel sizes and methods of manufacturing the CMOS pixel sensors with implant dose control are provided. The method includes forming a plurality of pixel sensors in a same substrate and forming a masking pattern over at least one of the plurality of pixel sensors that has a pixel size larger than a non-masked pixel sensor of the plurality of pixel sensors. The method further includes providing a single dosage implant to the plurality of pixel sensors. The at least one of the plurality of pixel sensors with the masking pattern receives a lower dosage than the non-masked pixel sensor.
摘要翻译： 提供具有多个像素尺寸的CMOS像素传感器和用植入剂量控制制造CMOS像素传感器的方法。 该方法包括在相同的衬底中形成多个像素传感器，并在多个像素传感器中的至少一个具有比多个像素传感器中的非掩蔽像素传感器的像素尺寸更大的像素传感器中形成掩模图案。 该方法还包括向多个像素传感器提供单个剂量植入物。 具有掩蔽图案的多个像素传感器中的至少一个具有比非掩蔽像素传感器更低的剂量。
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公开(公告)号：US20110068424A1
公开(公告)日：2011-03-24
申请号：US12564996
申请日：2009-09-23
IPC分类号： H01L31/0232
CPC分类号： H01L27/14687 , H01L21/76802 , H01L21/76877 , H01L23/5384 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein an image sensor chip, including a substrate having at least one via extending through at least one inter layer dielectric (ILD); a first conductive layer over the ILD, wherein the first conductive layer has a first thickness; a second conductive layer over the first conductive layer, wherein the second conductive layer has a second thickness of less than the first thickness; a polymer layer over the second conductive layer, the polymer layer including a cavity; a plurality of cavity components in the cavity; and an optically transparent layer contacting the polymer layer and covering the cavity.
摘要翻译： 本文公开了一种图像传感器芯片，包括具有延伸穿过至少一个层间电介质（ILD）的至少一个通孔的基板; ILD上的第一导电层，其中所述第一导电层具有第一厚度; 在所述第一导电层上的第二导电层，其中所述第二导电层具有小于所述第一厚度的第二厚度; 在所述第二导电层上的聚合物层，所述聚合物层包括空腔; 空腔中的多个空腔部件; 以及与聚合物层接触并覆盖空腔的光学透明层。
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48.发明申请Design Structure, Methods, and Apparatus Involving Photoconductor-on-Active Pixel Devices 有权涉及光电导体活性像素器件的设计结构，方法和设备公开(公告)号：US20120146115A1
公开(公告)日：2012-06-14
申请号：US12967625
申请日：2010-12-14
IPC分类号： H01L31/112 , G06F17/50
CPC分类号： H01L31/105 , H01L27/14632 , H01L27/14636 , H01L27/14665 , H01L27/14687
摘要： A design structure embodied in a machine readable medium used in a design process includes a first dielectric layer disposed on an intermediary layer, a first conductive pad portion and a first interconnect portion disposed on the first dielectric layer, a second dielectric layer disposed on the first dielectric layer, a first capping layer disposed on the first interconnect portion and a portion of the first conductive pad portion, a second capping layer disposed on the first capping layer and a portion of the second dielectric layer, an n-type doped silicon layer disposed on the second capping layer and the first conductive pad portion, an intrinsic silicon layer disposed on the n-type doped silicon layer, and a p-type doped silicon layer disposed on the intrinsic silicon layer.
摘要翻译： 体现在设计过程中使用的机器可读介质中的设计结构包括设置在中间层上的第一介电层，设置在第一介电层上的第一导电焊盘部分和第一互连部分，设置在第一介电层上的第二介电层 电介质层，设置在第一互连部分上的第一覆盖层和第一导电焊盘部分的一部分，设置在第一覆盖层上的第二封盖层和第二介电层的一部分，设置n型掺杂硅层 在第二覆盖层和第一导电焊盘部分上，设置在n型掺杂硅层上的本征硅层和设置在本征硅层上的p型掺杂硅层。
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公开(公告)号：US08158988B2
公开(公告)日：2012-04-17
申请号：US12133380
申请日：2008-06-05
IPC分类号： H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00
CPC分类号： H01L27/14623 , H01L27/14609 , H01L27/14632 , H01L27/14643
摘要： A CMOS image sensor pixel includes a conductive light shield, which is located between a first dielectric layer and a second dielectric layer. At least one via extends from a top surface of the second dielectric layer to a bottom surface of the first dielectric layer is formed in the metal interconnect structure. The conductive light shield may be formed within a contact level between a top surface of a semiconductor substrate and a first metal line level, or may be formed in any metal interconnect via level between two metal line levels. The inventive CMOS image sensor pixel enables reduction of noise in the signal stored in the floating drain.
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公开(公告)号：US20090294812A1
公开(公告)日：2009-12-03
申请号：US12129714
申请日：2008-05-30
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/14609 , H01L27/14641 , H01L27/14683
摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.
摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括在第一半导体衬底中形成包括第一半导体材料的第一感光二极管。 在第二半导体衬底中形成包括具有与第一半导体材料不同的光检测波长范围的第二半导体材料的第二光敏二极管。 用于保持和检测包括CMOS图像传感器的感测电路的电荷的半导体器件也可以形成在第二半导体衬底中。 第一半导体衬底和第二半导体衬底被接合，使得第一感光二极管位于第二感光二极管的下方。 第一和第二光敏二极管的垂直堆叠检测第一和第二半导体材料的组合检测波长范围内的光。 感测装置可以在第一和第二光敏二极管之间共享。
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