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公开(公告)号：US09885962B2
公开(公告)日：2018-02-06
申请号：US14521966
申请日：2014-10-23
Applicant: KLA-Tencor Corporation
Inventor： Andrei Veldman , Michael S. Bakeman , Andrei V. Shchegrov , Walter D. Mieher
CPC classification number: G03F7/70633 , G01N21/9501 , H01L22/12
Abstract: Disclosed are apparatus and methods for determining overlay error in a semiconductor target. For illumination x-rays having at least one angle of incidence (AOI), a correlation model is obtained, and the correlation model correlates overlay error of a target with a modulation intensity parameter for each of one or more diffraction orders (or a continuous diffraction intensity distribution) for x-rays scattered from the target in response to the illumination x-rays. A first target is illuminated with illumination x-rays having the at least one AOI and x-rays that are scattered from the first target in response to the illumination x-rays are collected. An overlay error of the first target is determined based on the modulation intensity parameter of the x-rays collected from the first target for each of the one or more diffraction orders (or the continuous diffraction intensity distribution) and the correlation model.
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公开(公告)号：US09879977B2
公开(公告)日：2018-01-30
申请号：US14073538
申请日：2013-11-06
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov
CPC classification number: G01B11/02 , G01B11/0641 , G01B11/065
Abstract: Methods and systems for achieving a small measurement box size specification across a set of metrology system parameters are presented. The small measurement box size specification is achieved by selectively constraining one or more of the sets of system parameters during measurement. A subset of measurement system parameters such as illumination wavelength, polarization state, polar angle of incidence, and azimuth angle of incidence is selected for measurement to maintain a smaller measurement box size than would otherwise be achievable if the full, available range of measurement system parameters were utilized in the measurement. In this manner, control of one or more factors that affect measurement box size is realized by constraining the measurement system parameter space. In addition, a subset of measurement signals may be selected to maintain a smaller measurement box size than would otherwise be achievable if all available measurement signals were utilized in the measurement.
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公开(公告)号：US09816810B2
公开(公告)日：2017-11-14
申请号：US15268217
申请日：2016-09-16
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
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公开(公告)号：US09693439B1
公开(公告)日：2017-06-27
申请号：US14304329
申请日：2014-06-13
Applicant: KLA-Tencor Corporation
Inventor： Guorong V. Zhuang , Michael S. Bakeman , Andrei V. Shchegrov , Jonathan M. Madsen
IPC: H05G2/00 , G01N23/201
CPC classification number: H05G2/005 , G01N23/201 , G21K1/06 , H01J35/08 , H01J35/14 , H01J2235/082 , H05G2/008
Abstract: Methods and systems for realizing a high brightness liquid metal droplet based x-ray source suitable for high throughput x-ray metrology are presented herein. A high power laser bombards a solid target material to generate liquid metal droplets. The laser generated liquid metal droplets are excited with a focused, high power excitation beam such as an electron or laser beam. The excitation beam is synchronized with the stream of liquid metal droplets stimulated by the high power laser to achieve a stable x-ray emission generated by the excited liquid metal droplets. In some embodiments, x-ray optics are designed to efficiently collect and focus radiation within a desired emission band onto a measurement target. Reliability is improved by shielding the excitation source and the x-ray optics from the region of interaction between the excitation beam and the liquid metal droplet anode by a localized curtain of shielding gas.
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公开(公告)号：US20170003123A1
公开(公告)日：2017-01-05
申请号：US15268217
申请日：2016-09-16
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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Patent Agency Ranking
公开(公告)号：US09490182B2
公开(公告)日：2016-11-08
申请号：US14574021
申请日：2014-12-17
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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公开(公告)号：US20160202193A1
公开(公告)日：2016-07-14
申请号：US14994817
申请日：2016-01-13
Applicant: KLA-Tencor Corporation
Inventor： John J. Hench , Andrei V. Shchegrov , Michael S. Bakeman
CPC classification number: G01N23/20008
Abstract: Methods and systems for optimizing measurement system parameter settings of an x-ray based metrology system are presented. X-ray based metrology systems employing an optimized set of measurement system parameters are used to measure structural, material, and process characteristics associated with different semiconductor fabrication processes with greater precision and accuracy. In one aspect, a set of values of one or more machine parameters that specify a measurement scenario is refined based at least in part on a sensitivity of measurement data to a previous set of values of the one or more machine parameters. The refinement of the values of the machine parameters is performed to maximize precision, maximize accuracy, minimize correlation between parameters of interest, or any combination thereof. Refinement of the machine parameter values that specify a measurement scenario can be used to optimize the measurement recipe to reduce measurement time and increase measurement precision and accuracy.
Abstract translation: 介绍了基于x射线的测量系统优化测量系统参数设置的方法和系统。 使用采用优化的测量系统参数集的基于X射线的测量系统以更高的精度和精度测量与不同半导体制造工艺相关联的结构，材料和工艺特性。 在一个方面，至少部分地基于测量数据对一个或多个机器参数的先前的一组值的灵敏度来改进指定测量场景的一个或多个机器参数的一组值。 执行机器参数的值的精细化以最大化精度，最大化精度，最小化关注参数之间的相关性或其任何组合。 可以使用指定测量场景的机器参数值的优化来优化测量配方，以减少测量时间，并提高测量精度和精度。
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公开(公告)号：US09311431B2
公开(公告)日：2016-04-12
申请号：US13665436
申请日：2012-10-31
Applicant: KLA-Tencor Corporation
Inventor： Sungchul Yoo , Andrei V. Shchegrov , Thaddeus G. Dziura , InKyo Kim , SeungHwan Lee , ByeoungSu Hwang , Leonid Poslavsky
CPC classification number: G06F17/50 , G01N21/47 , G01N21/956 , G03F7/70625 , G03F7/70683 , G06F17/10 , G06F17/40 , G06F19/00
Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into a scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.
Abstract translation: 本公开旨在改进具有利用定制设计的次要目标的具有复杂结构属性的样本的光学计量学。 可以控制辅助目标的至少一个参数以提高对主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。 可以收集主要和次要目标的参数。 这些参数可以并入散射测量模型中。 可以进行利用散射测量模型的模拟来确定主要目标的选定参数的灵敏度水平或相关程度。 可以修改辅助目标的受控参数，直到达到所选择的灵敏度水平或所选择的相关水平。
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公开(公告)号：US20150176985A1
公开(公告)日：2015-06-25
申请号：US14574021
申请日：2014-12-17
Applicant: KLA-Tencor Corporation
Inventor： Andrei V. Shchegrov , Shankar Krishnan , Kevin Peterlinz , Thaddeus Gerard Dziura , Noam Sapiens , Stilian Ivanov Pandev
IPC: G01B11/27
CPC classification number: G01B11/272 , G01B2210/56 , G03F7/0002 , G03F7/70141 , G03F7/70625 , H01L22/12 , H01L22/30
Abstract: Methods and systems for evaluating the performance of multiple patterning processes are presented. Patterned structures are measured and one or more parameter values characterizing geometric errors induced by the multiple patterning process are determined. In some examples, a single patterned target and a multiple patterned target are measured, the collected data fit to a combined measurement model, and the value of a structural parameter indicative of a geometric error induced by the multiple patterning process is determined based on the fit. In some other examples, light having a diffraction order different from zero is collected and analyzed to determine the value of a structural parameter that is indicative of a geometric error induced by a multiple patterning process. In some embodiments, a single diffraction order different from zero is collected. In some examples, a metrology target is designed to enhance light diffracted at an order different from zero.
Abstract translation: 提出了评估多个图案化工艺性能的方法和系统。 测量图案化结构，并确定表征由多重图案化工艺引起的几何误差的一个或多个参数值。 在一些示例中，测量单个图案化靶和多个图案化靶，所收集的数据拟合到组合测量模型，并且基于拟合来确定指示由多次图案化工艺引起的几何误差的结构参数的值 。 在一些其它示例中，收集并分析具有不同于零的衍射级的光，以分析其结果参数的值，该结构参数指示由多重图案化工艺引起的几何误差。 在一些实施例中，收集不同于零的单个衍射级。 在一些示例中，度量目标被设计为增强以不同于零的顺序衍射的光。
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公开(公告)号：US20150051877A1
公开(公告)日：2015-02-19
申请号：US14461416
申请日：2014-08-17
Applicant: KLA-Tencor Corporation
Inventor： Michael S. Bakeman , Andrei V. Shchegrov , Kevin Peterlinz , Thaddeus Gerard Dziura
IPC: G06F17/50 , G01N23/223 , G01N23/201
CPC classification number: G01N23/223 , G01N23/201 , G01N2223/6116
Abstract: Methods and systems for performing simultaneous X-ray Fluorescence (XRF) and small angle x-ray scattering (SAXS) measurements over a desired inspection area of a specimen are presented. SAXS measurements combined with XRF measurements enables a high throughput metrology tool with increased measurement capabilities. The high energy nature of x-ray radiation penetrates optically opaque thin films, buried structures, high aspect ratio structures, and devices including many thin film layers. SAXS measurements of a particular location of a planar specimen are performed at a number of different out of plane orientations. This increases measurement sensitivity, reduces correlations among parameters, and improves measurement accuracy. In addition, specimen parameter values are resolved with greater accuracy by fitting data sets derived from both SAXS and XRF measurements based on models that share at least one material parameter. The fitting can be performed sequentially or in parallel.
Abstract translation: 提出了在样本的期望检查区域上执行同时X射线荧光（XRF）和小角度X射线散射（SAXS）测量的方法和系统。 SAXS测量结合XRF测量，可实现高吞吐量测量工具，增加测量能力。 x射线辐射的高能量性质穿透光学不透明的薄膜，掩埋结构，高纵横比结构以及包括许多薄膜层的器件。 平面样本的特定位置的SAXS测量在多个不同的平面外取向进行。 这增加了测量灵敏度，降低了参数之间的相关性，并提高了测量精度。 此外，通过根据共享至少一个材料参数的模型拟合从SAXS和XRF测量得到的数据集，可以更准确地解决样本参数值。 可以顺序地或并行地执行装配。
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