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    COMPOSITE OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    41.
    发明申请
    COMPOSITE OPTICAL ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
    复合光学元件及其制造方法

    公开(公告)号：US20090195894A1

    公开(公告)日：2009-08-06

    申请号：US12304579

    申请日：2007-06-06

    申请人： Kazuaki Takagi ,  Yoshiyuki Shimizu ,  Toshiaki Takano ,  Jun Murata

    发明人： Kazuaki Takagi ,  Yoshiyuki Shimizu ,  Toshiaki Takano ,  Jun Murata

    IPC分类号： G02B3/00 ,  B29D11/00 ,  G02B7/02

    CPC分类号： G02B5/1895 ,  B29D11/0073 ,  G02B3/00 ,  G02B3/08 ,  G02B5/1852 ,  G02B7/02

    摘要： The present invention belongs to a technical field related to a composite optical element including a first optical component and a second optical component coupled to the first optical component. In a composite optical element 1 including a first optical component 10 and a second optical component 20 coupled to the first optical component 10, shape accuracy of the second optical component 20 is improved to prevent reduction in optical performance. A ring member (106) is placed on a peripheral portion of a lens surface (10b) of the first optical component (10), the ring member (106) having a height hi from the lens surface (10b) substantially uniform in a circumferential direction of the first optical component (10).

    摘要翻译： 本发明属于与包括耦合到第一光学部件的第一光学部件和第二光学部件的复合光学元件相关的技术领域。 在包括耦合到第一光学部件10的第一光学部件10和第二光学部件20的复合光学元件1中，改善了第二光学部件20的形状精度，以防止光学性能的降低。 环形构件（106）被放置在第一光学部件（10）的透镜表面（10b）的周边部分上，具有从透镜表面（10b）的高度hi的环形部件（106）在圆周方向上基本均匀 第一光学部件（10）的方向。

    Absorption refrigerating machine
    42.
    发明授权
    Absorption refrigerating machine 有权
    吸收式制冷机

    公开(公告)号：US07316126B2

    公开(公告)日：2008-01-08

    申请号：US10556724

    申请日：2004-05-14

    申请人： Jun Aoyama ,  Jun Murata ,  Norio Arai ,  Toshio Matsubara

    发明人： Jun Aoyama ,  Jun Murata ,  Norio Arai ,  Toshio Matsubara

    IPC分类号： F25B15/00

    CPC分类号： F25B15/008 ,  Y02A30/277 ,  Y02B30/62

    摘要： The present invention provides a high-efficiency absorption refrigerating machine which can recover heat from a heat source and can efficiently recover heat from an internal cycle. The absorption refrigerating machine includes an evaporator, an absorber (A), a condenser (C), a high-temperature regenerator (GH), a low-temperature regenerator (GL), a low-temperature solution heat exchanger (LX), and solution paths and refrigerant paths by which these units are connected. The absorption refrigerating machine further comprises two branch solution paths branched from a solution supply path through which a dilute solution is introduced from the absorption (A) to the high-temperature regenerator (GH). On one of the branch solution paths, there is disposed a drain heat exchanger (DX) operable to perform heat exchange between the dilute solution in the branch solution path and an exhaust heat source which has heated the high-temperature regenerator (GH). On the other of the branch solution paths, there are disposed a first high-temperature solution heat exchanger (HX1) and a second high-temperature solution heat exchanger (HX2) operable to perform heat exchange between the dilute solution in the branch solution path and a concentrated solution heated and concentrated in the high-temperature regenerator (GH). The absorption refrigerating machine is configured such that the dilute solution flows through the first high-temperature solution heat exchanger (HX1) and the second high-temperature solution heat exchanger (HX2) in this order, and the concentrated solution discharged from the high-temperature regenerator flows through the second high-temperature solution heat exchanger (HX2) and the first high-temperature solution heat exchanger (HX1) in this order.

    摘要翻译： 本发明提供一种高效率的吸收式制冷机，其能够从热源回收热量，并能够有效地从内部循环中回收热量。 吸收式制冷机包括蒸发器，吸收器（A），冷凝器（C），高温再生器（GH），低温再生器（GL），低温溶液热交换器（LX）和 这些单元连接的溶液路径和制冷剂路径。 吸收式制冷机还包括从溶液供给路径分支出的两个分支溶液路径，通过该溶液供给路径将稀释溶液从吸收剂（A）引入高温再生器（GH）。 在分支溶液路径中的一个上，设置有可以在分支溶液路径中的稀溶液与加热了高温再生器（GH）的排气热源之间进行热交换的排水热交换器（DX）。 在另一个分支溶液路径中，设置有第一高温溶液热交换器（HX 1）和第二高温溶液热交换器（HX 2），其可操作以在分支溶液中的稀溶液之间进行热交换 并将浓缩溶液加热并浓缩在高温再生器（GH）中。 吸收式制冷机以这样的顺序流过第一高温溶液热交换器（HX1）和第二高温溶液热交换器（HX 2）的方式构成，从高温排出的浓缩液 - 温度再生器依次流过第二高温溶液热交换器（HX 2）和第一高温溶液热交换器（HX 1）。

    Method of fabricating low stress semiconductor devices with thermal oxide isolation
    43.
    发明授权
    Method of fabricating low stress semiconductor devices with thermal oxide isolation 失效
    制造具有热氧化隔离的低应力半导体器件的方法

    公开(公告)号：US06620704B2

    公开(公告)日：2003-09-16

    申请号：US09893980

    申请日：2001-06-29

    申请人： Hideo Miura ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

    发明人： Hideo Miura ,  Makoto Ogasawara ,  Hiroo Masuda ,  Jun Murata ,  Noriaki Okamoto

    IPC分类号： H01L2176

    CPC分类号： H01L21/76205 ,  H01L21/76202 ,  H01L27/0802

    摘要： A method is provided of fabricating a semiconductor device that includes forming a silicon oxide film on a semiconductor substrate. A silicon nitrite film may be formed on the silicon oxide film. A portion of the silicon nitrite film and the silicon oxide film may be removed at a desired portion. Additionally, a groove may be formed in the semiconductor substrate in the portion in which the silicon oxide film is removed. A part of the silicon oxide film may be etched back around the groove with hydrofluoric acid type at the portion in which the silicon nitrite film is located above. Additionally, an oxidized film may be formed in the groove of the semiconductor substrate and the groove may be oxidized.

    摘要翻译： 提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上形成氧化硅膜。 可以在氧化硅膜上形成亚硝酸硅膜。 可以在期望的部分去除一部分亚硝酸硅膜和氧化硅膜。 此外，可以在除去氧化硅膜的部分中的半导体衬底中形成沟槽。 氧化硅膜的一部分可以在硅亚硝酸盐膜位于上方的部分用氢氟酸型蚀刻回到槽周围。 此外，可以在半导体衬底的沟槽中形成氧化膜，并且可以使沟槽被氧化。

    Electrifying member comprising an electrically conductive elastomer, and electrophotograph apparatus using said electrifying member
    44.
    发明授权
    Electrifying member comprising an electrically conductive elastomer, and electrophotograph apparatus using said electrifying member 有权
    包括导电弹性体的通电构件和使用所述带电构件的电子照相装置

    公开(公告)号：US6078778A

    公开(公告)日：2000-06-20

    申请号：US148670

    申请日：1998-09-04

    申请人： Jun Murata ,  Yoshiaki Nishimura ,  Nobutoshi Hayashi

    发明人： Jun Murata ,  Yoshiaki Nishimura ,  Nobutoshi Hayashi

    IPC分类号： G03G15/16 ,  G03G15/08

    CPC分类号： G03G15/1685 ,  G03G2215/021

    摘要： This invention provides an improved electrifying member capable of that can have an electric voltage applied to it to electrify a surface of another member which is to be electrified. In particular, said electrifying member comprises an electrically conductive elastomer obtained by vulcanizing a mixture containing a nitryl rubber, a liquid nitryl rubber, and a non-polar polymer. Therefore, the invention provides an improved electrophotograph apparatus employing the above improved electrifying member, which has a relatively uniform electric resistance and uniform electrifying characteristics, has almost no change in its characteristics even if it has been used for a long time period, and is non-viscous and thus will not stick to a photosensitive body (to be electrified) so that it will not contaminate the photosensitive body.

    摘要翻译： 本发明提供了一种改进的带电元件，其能够具有施加到其上的电压以使要带电的另一个元件的表面通电。 特别地，所述带电构件包括通过硫化含有硝基橡胶，液体硝基橡胶和非极性聚合物的混合物而获得的导电弹性体。 因此，本发明提供了一种使用上述改进的带电元件的改进的电子照相装置，具有相对均匀的电阻和均匀的通电特性，即使长时间使用也几乎没有其特性的变化， 并且因此不会粘附到感光体（被带电），使得它不会污染感光体。

    Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same
    46.
    发明授权
    Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same 有权
    包括具有增加的信息存储电容的存储单元的存储器件的半导体集成电路器件及其制造方法

    公开(公告)号：US6023084A

    公开(公告)日：2000-02-08

    申请号：US174332

    申请日：1998-10-19

    申请人： Yoshitaka Tadaki ,  Jun Murata ,  Toshihiro Sekiguchi ,  Hideo Aoki ,  Keizo Kawakita ,  Hiroyuki Uchiyama ,  Michio Nishimura ,  Michio Tanaka ,  Yuji Ezaki ,  Kazuhiko Saitoh ,  Katsuo Yuhara ,  Songsu Cho

    发明人： Yoshitaka Tadaki ,  Jun Murata ,  Toshihiro Sekiguchi ,  Hideo Aoki ,  Keizo Kawakita ,  Hiroyuki Uchiyama ,  Michio Nishimura ,  Michio Tanaka ,  Yuji Ezaki ,  Kazuhiko Saitoh ,  Katsuo Yuhara ,  Songsu Cho

    IPC分类号： H01L21/3205 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/10 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L2924/0002

    摘要： A semiconductor memory device has a semiconductor substrate, and memory cells provided at intersections between word line conductors and bit line conductors. Adjacent two memory cells for each bit line conductor form a memory cell pair unit structure, in which first semiconductor regions of the transistors of the adjacent two memory cells are united at their boundary into a single region and are connected to one of the bit line conductors via a bit line connection conductor, the gate electrodes of the transistors of the adjacent two memory cells are connected to word line conductors adjacent to each other, respectively, and the second semiconductor regions of the transistors of the adjacent two memory cells are connected to the respective information storage capacitors. A series of memory cell pair unit structures formed under one bit line conductor is positionally shifted with respect to series of memory cell pair unit structures formed under adjacent first and second bit line conductors on opposite sides of the one bit line conductor, respectively, such that a second information storage capacitor of a memory cell pair unit structure formed under the adjacent first bit line conductor and a first information storage capacitor of a memory cell pair unit structure formed under the adjacent second bit line conductor are located adjacent to a bit line connection conductor of a memory cell pair unit structure formed under the one bit line conductor.

    摘要翻译： 半导体存储器件具有半导体衬底和设置在字线导体和位线导体之间的交叉点处的存储单元。 每个位线导体的相邻的两个存储单元形成存储单元对单元结构，其中相邻两个存储单元的晶体管的第一半导体区域在其边界处被结合成单个区域并连接到位线导体之一 通过位线连接导体，相邻的两个存储单元的晶体管的栅电极分别连接到彼此相邻的字线导体，并且相邻两个存储单元的晶体管的第二半导体区域连接到 各信息存储电容器。 形成在一个位线导体下方的一系列存储单元对单元结构相对于分别在一个位线导体的相对侧上相邻的相邻第一和第二位线导体下形成的一系列存储单元对单元结构位置移位，使得 形成在相邻的第一位线导体下方的存储单元对单元结构的第二信息存储电容器和形成在相邻的第二位线导体下方的存储单元对单元结构的第一信息存储电容器位于邻近位线连接导体 形成在一个位线导体下的存储单元对单元结构。

    Controller for absorption cold or hot water generating machine
    47.
    发明授权
    Controller for absorption cold or hot water generating machine 失效
    控制器用于吸收冷热水机

    公开(公告)号：US6009714A

    公开(公告)日：2000-01-04

    申请号：US116943

    申请日：1998-07-17

    申请人： Syouji Tanaka ,  Takashi Kaneko ,  Naoyuki Inoue ,  Jun Murata ,  Teruwo Shiraishi ,  Toshio Matsubara ,  Nobutaka Matsuda ,  Motonao Kera

    发明人： Syouji Tanaka ,  Takashi Kaneko ,  Naoyuki Inoue ,  Jun Murata ,  Teruwo Shiraishi ,  Toshio Matsubara ,  Nobutaka Matsuda ,  Motonao Kera

    IPC分类号： F25B15/00 ,  F25B49/04

    CPC分类号： F25B49/043 ,  F25B15/008 ,  Y02B30/62

    摘要： A controller for an absorption cold/hot water generating machine, in which a refrigerating cycle is formed by pipe-connecting an evaporator, an absorber, a solution heat exchanger, a low-temperature generator, a condenser, and a high-temperature generator, and the solution level in a header of the high-temperature generator is kept within a prescribed range by controlling the flow rate of the solution fed from the absorber to the high-temperature generator; wherein a solution pump for feeding a solution from the absorber to the high-temperature generator is inverter-driven, and there is provided pressure difference detecting means for detecting a difference in pressure between the high-temperature generator and the absorber; and wherein there is provided control means which controls the solution pump driving frequency of the inverter as a function of a pressure difference between the high-temperature generator and the absorber.

    摘要翻译： 一种用于吸收冷热水机的控制器，其中通过蒸发器，吸收器，溶液热交换器，低温发生器，冷凝器和高温发生器的管连接形成冷冻循环， 并且通过控制从吸收器供给到高温发生器的溶液的流量，将高温发生器的集管中的溶液水平保持在规定范围内; 其特征在于，将来自所述吸收体的溶液供给到所述高温发生器的溶液泵由逆变器驱动，并且设置有用于检测所述高温发生器与所述吸收器之间的压力差的压力差检测单元; 并且其中设置有控制装置，其控制逆变器的溶液泵驱动频率作为高温发生器和吸收器之间的压力差的函数。

    Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same
    49.
    发明授权
    Semiconductor integrated circuit device including a memory device having memory cells with increased information storage capacitance and method of manufacturing same 失效
    包括具有增加的信息存储电容的存储单元的存储器件的半导体集成电路器件及其制造方法

    公开(公告)号：US5831300A

    公开(公告)日：1998-11-03

    申请号：US731489

    申请日：1996-10-16

    申请人： Yoshitaka Tadaki ,  Jun Murata ,  Toshihiro Sekiguchi ,  Hideo Aoki ,  Keizo Kawakita ,  Hiroyuki Uchiyama ,  Michio Nishimura ,  Michio Tanaka ,  Yuji Ezaki ,  Kazuhiko Saitoh ,  Katsuo Yuhara ,  Songsu Cho

    发明人： Yoshitaka Tadaki ,  Jun Murata ,  Toshihiro Sekiguchi ,  Hideo Aoki ,  Keizo Kawakita ,  Hiroyuki Uchiyama ,  Michio Nishimura ,  Michio Tanaka ,  Yuji Ezaki ,  Kazuhiko Saitoh ,  Katsuo Yuhara ,  Songsu Cho

    IPC分类号： H01L21/3205 ,  H01L21/8242 ,  H01L23/52 ,  H01L27/10 ,  H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

    CPC分类号： H01L27/10852 ,  H01L27/10817 ,  H01L2924/0002

    摘要： A semiconductor memory device has a semiconductor substrate, word line conductors and bit line conductors, and memory cells provided at intersections between the word line conductors and bit line conductors. Adjacent two memory cells for each bit line conductor form a memory cell pair unit structure, in which first semiconductor regions of the transistors of the adjacent two memory cells are united at their boundary into a single region and are connected to one of the bit line conductors via a bit line connection conductor, the gate electrodes of the transistors of the adjacent two memory cells are connected to word line conductors adjacent to each other, respectively, the second semiconductor regions of the transistors of the adjacent two memory cells are connected to the respective information storage capacitors. A series of memory cell pair unit structures formed under one bit line conductor is positionally shifted with respect to the series of memory cell pair unit structures formed under adjacent first and second bit line conductors on opposite sides of the one bit line conductor, respectively, such that a second information storage capacitor of a memory cell pair unit structure formed under the adjacent first bit line conductor and a first information storage capacitor of a memory cell pair unit structure formed under the adjacent second bit line conductor are located adjacent to a bit line connection conductor of a memory cell pair unit structure formed under the one bit line conductor.

    摘要翻译： 半导体存储器件具有半导体衬底，字线导体和位线导体以及设置在字线导体和位线导体之间的交叉点处的存储单元。 每个位线导体的相邻的两个存储单元形成存储单元对单元结构，其中相邻两个存储单元的晶体管的第一半导体区域在其边界处被结合成单个区域并连接到位线导体之一 通过位线连接导体，相邻的两个存储单元的晶体管的栅电极分别连接到彼此相邻的字线导体，相邻两个存储单元的晶体管的第二半导体区域连接到相应的两个存储单元的晶体管的第二半导体区域 信息存储电容器。 形成在一个位线导体下方的一系列存储单元对单元结构相对于分别形成在一个位线导体的相对侧上相邻的第一和第二位线导体之下的一系列存储单元对单元结构位移地移位， 形成在相邻的第一位线导体下方的存储单元对单元结构的第二信息存储电容器和形成在相邻的第二位线导体下方的存储单元对单元结构的第一信息存储电容器位于与位线连接 形成在一个位线导体下的存储单元对单元结构的导体。