公开(公告)号：US20080005530A1

公开(公告)日：2008-01-03

申请号：US11767756

申请日：2007-06-25

申请人： Takeshi Nakano

发明人： Takeshi Nakano

IPC分类号： G06F12/00

CPC分类号： G06F12/0246 ,  G11C29/76

摘要： A semiconductor memory device has a semiconductor memory which includes the first central management block storing an address translation table, a free table for registering only an effective block address, the first bad block table, and a reserved table, and a controller configured to control a substitution block address acquired from the reserved table to substitute a bad block address when the bad block address is generated in the address translation table.

摘要翻译： 半导体存储器件具有半导体存储器，其包括存储地址转换表的第一中央管理块，仅注册有效块地址的空闲表，第一坏块表和保留表，以及控制器， 当在地址转换表中生成坏块地址时，从保留表获取的替换块地址替换坏块地址。

公开(公告)号：US07238563B2

公开(公告)日：2007-07-03

申请号：US10793923

申请日：2004-03-08

申请人： Norihisa Arai ,  Takeshi Nakano ,  Koki Ueno ,  Akira Shimizu

发明人： Norihisa Arai ,  Takeshi Nakano ,  Koki Ueno ,  Akira Shimizu

IPC分类号： H01L21/336

CPC分类号： H01L21/823481 ,  H01L21/2652 ,  H01L21/76237 ,  H01L29/0619 ,  H01L29/78

摘要： A trench isolation region is formed in a surface region of a semiconductor substrate to form a MOS type element region. A mask layer having an opening portion is formed on the semiconductor layer, the opening portion continuously ranging on the entire surface of the MOS type element region and on part of the trench isolation region provided around the MOS type element region. A first impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated in the semiconductor layer under the bottom surface of the shallow trench isolation region. A second impurity ion is implanted into the entire surface via the mask layer to form a peak of the impurity profile is situated on the midway of the depth direction of the trench isolation region. Then, the first and second impurity ions are activated.

摘要翻译： 沟槽隔离区域形成在半导体衬底的表面区域中以形成MOS型元件区域。 具有开口部的掩模层形成在半导体层上，开口部在MOS型元件区域的整个表面和设置在MOS型元件区域周围的沟槽隔离区域的一部分上连续地范围。 通过掩模层将第一杂质离子注入整个表面，以形成杂质分布的峰位于浅沟槽隔离区的底表面下的半导体层中。 通过掩模层将第二杂质离子注入整个表面以形成杂质分布的峰位于沟槽隔离区的深度方向的中间。 然后，第一和第二杂质离子被激活。

公开(公告)号：US06275444B1

公开(公告)日：2001-08-14

申请号：US09255779

申请日：1999-02-23

申请人： Takeshi Nakano ,  Kazunari Takahashi

发明人： Takeshi Nakano ,  Kazunari Takahashi

IPC分类号： G11C800

CPC分类号： G11C7/1057 ,  G11C7/1051 ,  G11C7/106 ,  G11C7/22 ,  G11C7/222

摘要： A semiconductor integrated circuit is disclosed which includes a clock synchronous memory, an internal clock generating circuit, a clock selecting circuit, a data output converting circuit, and a data output selecting circuit. The clock synchronous memory is disposed to receive a control signal, an address signal, and a data input and provide an internal data output. The internal clock generating circuit is disposed to generate an internal clock signal having a frequency higher than that of an external clock signal. The clock selecting circuit is disposed to select between the external clock signal and the internal clock signal and send the selected clock signal to the clock synchronous memory. The data output converting circuit is disposed to convert the internal data output into an external data output in synchronization with a clock signal having a frequency lower than that of the internal clock signal. The data output selecting circuit is disposed to select between the internal data output and the external data output and provide the selected data output.

摘要翻译： 公开了一种半导体集成电路，其包括时钟同步存储器，内部时钟发生电路，时钟选择电路，数据输出转换电路和数据输出选择电路。 时钟同步存储器被设置为接收控制信号，地址信号和数据输入并提供内部数据输出。 内部时钟发生电路被设置为产生具有高于外部时钟信号的频率的内部时钟信号。 时钟选择电路被设置为在外部时钟信号和内部时钟信号之间进行选择，并将选择的时钟信号发送到时钟同步存储器。 数据输出转换电路被设置成与具有低于内部时钟信号的频率的时钟信号同步地将内部数据输出转换成外部数据输出。 数据输出选择电路被设置为在内部数据输出和外部数据输出之间进行选择，并提供所选择的数据输出。

公开(公告)号：US5463016A

公开(公告)日：1995-10-31

申请号：US193887

申请日：1994-02-09

申请人： Isao Tomioka ,  Takeshi Nakano ,  Mikio Furukawa ,  Yoshiaki Echigo

发明人： Isao Tomioka ,  Takeshi Nakano ,  Mikio Furukawa ,  Yoshiaki Echigo

IPC分类号： B29C55/02 ,  B29K79/00 ,  C08G73/10 ,  C08J3/12 ,  C08J3/14 ,  C08L79/08 ,  C09D179/08 ,  H01B3/30 ,  C08G77/10 ,  C08G69/26

CPC分类号： C08G73/1032 ,  C08J3/12 ,  C08J3/14 ,  C08J2379/08

摘要： This invention provides (1) a granular material of a polyimide precursor, which has excellent solubility in solvents and excellent moldability and from which a polyimide molding having excellent mechanical properties can be produced, (2) a mixture of a granular material of a polyimide precursor with a solvent, in which the polyimide precursor shows excellent storage stability and (3) a process for the production of a granular material of a polyimide precursor, in which a solvent can be easily removed. Particularly provided are a polyimide precursor granular material having an intrinsic viscosity of 0.7 or higher and a polyimide precursor mixture which consists of a polyimide precursor granular polyimide having an intrinsic viscosity of 0.7 or higher and a solvent that does not exhibit a strong-mutual interaction with the polyimide precursor, as well as a process for the production of the polyimide precursor granular material. The granular material of a polyimide precursor can be obtained by allowing a tetracarboxylic dianhydride to undergo polymerization reaction with a diamine in a solvent that does not exhibit a strong mutual interaction with the polyimide precursor.

摘要翻译： 本发明提供（1）聚酰亚胺前体的粒状材料，其在溶剂中的溶解性优异，成型性优异，可以制造出具有优异的机械性能的聚酰亚胺成型体，（2）聚酰亚胺前体的粒状材料 与聚酰亚胺前体显示优异的储存稳定性的溶剂和（3）可以容易地除去溶剂的聚酰亚胺前体的粒状材料的制造方法。 特别提供特性粘度为0.7以上的聚酰亚胺前体粒状材料和由特性粘度为0.7以上的聚酰亚胺前体粒状聚酰亚胺构成的聚酰亚胺前体混合物和不显示与 聚酰亚胺前体，以及聚酰亚胺前体粒状材料的制造方法。 聚酰亚胺前体的粒状材料可以通过使四羧酸二酐与不与聚酰亚胺前体表现出强相互作用的溶剂中的二胺进行聚合反应来获得。

公开(公告)号：US20140143910A1

公开(公告)日：2014-05-22

申请号：US13983960

申请日：2012-02-07

申请人： Takeshi Nakano ,  Tadao Asami ,  Ayumi Yamagami

发明人： Takeshi Nakano ,  Tadao Asami ,  Ayumi Yamagami

IPC分类号： A01N43/36 ,  C12N15/82

CPC分类号： A01N43/36 ,  A01N37/46 ,  A01N65/00 ,  C07K14/415 ,  C12N15/8261 ,  C12N15/8279 ,  C12N15/8298 ,  Y02A40/146 ,  A01N65/08

摘要： The objective of the present invention is to develop and provide: a composition that more inexpensively and safely augments plant disease resistance and/or plant branching by inducing new plant disease resistance via a brassinosteroids; and a method for suppressing microbial infection of plants and a method for augmenting branching using the composition. Provided is a composition containing as the active ingredient a peptide hormone obtained on the basis of isolating a disease resistant brassinosteroid variant and analyzing the causative gene thereof.

摘要翻译： 本发明的目的是开发和提供：通过经由油菜素类固醇诱导新的植物病害抗性，更廉价和安全地增加植物抗病性和/或植物分枝的组合物; 以及抑制植物的微生物感染的方法以及使用该组合物来增加支链的方法。 本发明提供含有作为活性成分的基于分离抗病毒油菜素甾体变体而得到的肽激素并分析其致病基因的组合物。

公开(公告)号：US08493786B2

公开(公告)日：2013-07-23

申请号：US12822587

申请日：2010-06-24

申请人： Takeshi Nakano ,  Mikio Ogawa

发明人： Takeshi Nakano ,  Mikio Ogawa

IPC分类号： G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/30

摘要： According to one embodiment, a semiconductor device includes a first voltage generator, a second voltage generator, a first MOS transistor, and a controller. The first voltage generator outputs a first voltage to a first node. The second voltage generator outputs a second voltage to a second node. The first MOS transistor is capable of short-circuiting the first node and second node. The controller performs a control operation to short-circuit the first node and second node by turning on the first MOS transistor. The controller controls a period in which the first MOS transistor is kept in an on state based on time.

摘要翻译： 根据一个实施例，半导体器件包括第一电压发生器，第二电压发生器，第一MOS晶体管和控制器。 第一电压发生器向第一节点输出第一电压。 第二电压发生器向第二节点输出第二电压。 第一MOS晶体管能够使第一节点和第二节点短路。 控制器通过接通第一MOS晶体管来执行控制操作以使第一节点和第二节点短路。 控制器基于时间控制第一MOS晶体管保持在导通状态的时段。

公开(公告)号：US08451350B2

公开(公告)日：2013-05-28

申请号：US13049334

申请日：2011-03-16

申请人： Masahiko Nozaki ,  Takeshi Nakano ,  Junichi Hosokawa

发明人： Masahiko Nozaki ,  Takeshi Nakano ,  Junichi Hosokawa

IPC分类号： H04N9/64

CPC分类号： H04N5/361

摘要： According to one embodiment, a third optical black portion is arranged in parallel with a first optical black portion in a row direction and in parallel with a second optical black portion in column direction. At least one of the vertical line correction circuit and the horizontal line correction circuit adds/subtracts arithmetic average of the third black level signal generated by the third optical black portion.

摘要翻译： 根据一个实施例，第三光学黑色部分与行方向上的第一光学黑色部分平行布置，并且与列方向上的第二光学黑色部分平行布置。 垂直线校正电路和水平线校正电路中的至少一个对由第三光学黑色部分产生的第三黑电平信号的算术平均值进行加/减。

公开(公告)号：US08077523B2

公开(公告)日：2011-12-13

申请号：US12406382

申请日：2009-03-18

申请人： Takeshi Nakano ,  Hiroshi Nakamura ,  Koji Hosono

发明人： Takeshi Nakano ,  Hiroshi Nakamura ,  Koji Hosono

IPC分类号： G11C11/34 ,  G11C16/06

CPC分类号： G11C16/08

摘要： A semiconductor memory device includes a transfer circuit and a control circuit. The transfer circuit which includes a p-type MOS transistor with a source to which is applied a first voltage and an n-type MOS transistor to whose gate the drain of the p-type MOS transistor is connected and the first voltage is transferred, to whose source a second voltage is applied, and whose drain is connected to a load. The control circuit which turns the p-type MOS transistor on and off and which turns the p-type MOS transistor on to make the p-type MOS transistor transfer the second voltage to the load and, during the transfer, turns the p-type MOS transistor off to make the gate of the n-type MOS transistor float at the first voltage.

摘要翻译： 半导体存储器件包括转移电路和控制电路。 该传输电路包括一个p型MOS晶体管，其源极被施加第一电压，一个n型MOS晶体管被连接到p型MOS晶体管的漏极并且第一个电压被传输到其栅极，到 其源极施加第二电压，并且其漏极连接到负载。 控制电路使p型MOS晶体管导通和关断，并使p型MOS晶体管导通，使p型MOS晶体管将第二电压转移到负载，并且在传输期间使p型MOS晶体管转换为p型 MOS晶体管关闭，使n型MOS晶体管的栅极浮在第一电压。

公开(公告)号：US20110300469A1

公开(公告)日：2011-12-08

申请号：US13201539

申请日：2010-02-12

申请人： Tomohiro Ono ,  Takeshi Nakano ,  Taketomo Yamashita ,  Keiji Kubo ,  Nozomu Sugoh

发明人： Tomohiro Ono ,  Takeshi Nakano ,  Taketomo Yamashita ,  Keiji Kubo ,  Nozomu Sugoh

IPC分类号： H01M8/10

CPC分类号： C08J5/2206 ,  C08J2327/18 ,  H01B1/122 ,  H01M8/1023 ,  H01M8/1044 ,  H01M8/1053 ,  H01M8/1081 ,  Y02E60/521 ,  Y02P70/56

摘要： An electrolyte membrane having a structure wherein fine rubber particles having substantially no ion-conducting group and having an average particle size of 20 nm to 1 μm are uniformly dispersed in a matrix including a resin component having ion-conducting group. The electrolyte membrane has high bonding ability to electrodes and does not cause cracks and ruptures because it is kept flexible even under low humid or absolutely dried condition, in addition, shows high ion conductivity even under low humid or absolutely dried condition because the matrix having ion-conducting groups are continuous.

摘要翻译： 具有基本上不具有离子传导性基团且具有20nm〜1μm的平均粒径的细小橡胶粒子的电解质膜均匀分散在包含具有离子传导性基团的树脂成分的基体中。 电解质膜与电极的接合能力高，不会产生裂缝和破裂，因为即使在低湿度或绝对干燥条件下，即使在低湿度或绝对干燥条件下也能保持柔性，因为具有离子的基质 导电组是连续的。

公开(公告)号：US08025313B2

公开(公告)日：2011-09-27

申请号：US12411067

申请日：2009-03-25

申请人： Masaaki Tanaka ,  Katsuyuki Komiya ,  Shin Murata ,  Norihisa Adachi ,  Yukihito Itami ,  Hitoshi Nagai ,  Takeshi Nakano

发明人： Masaaki Tanaka ,  Katsuyuki Komiya ,  Shin Murata ,  Norihisa Adachi ,  Yukihito Itami ,  Hitoshi Nagai ,  Takeshi Nakano

IPC分类号： B62D21/06 ,  B62D21/11

CPC分类号： B60G3/202 ,  B60G7/02 ,  B60G99/00 ,  B60G2200/18 ,  B60G2200/182 ,  B60G2204/15 ,  B60G2206/60 ,  B62D21/11

摘要： Disclosed is a suspension subframe structure of a vehicle, which is capable of improving the overall rigidity of a suspension subframe to effectively receive input loads from suspension arms, while reducing the overall weight of the suspension subframe. The suspension subframe structure for supporting a plurality of suspension arms 14, 16 of a multi-link suspension system comprises first and second lateral members 20, 22 each extending in a lateral direction of the vehicle body, a pair of longitudinal members each extending in a longitudinal direction of the vehicle body, and right and left inclined members 28 each having one end which is located on the side of a respective one of right and left ends of the first lateral member and provided with an upper-arm support portion and a lower-arm support portion, wherein each of the right and left inclined members extends obliquely relative to the lateral direction in top plan view to connect the upper-arm support portion and the lower-arm support portion with a laterally intermediate portion of the second lateral member.

摘要翻译： 公开了一种车辆的悬架子框架结构，其能够提高悬架子框架的总体刚度，以有效地从悬架臂接收输入载荷，同时减小悬架子系统的总重量。 用于支撑多连杆悬架系统的多个悬挂臂14,16的悬架子框架结构包括第一和第二横向构件20,22，每个横向构件沿着车身的横向方向延伸，一对纵向构件，每个纵向构件以 车体的纵向方向以及左右的倾斜部件28，所述左右的倾斜部件28的一端位于第一侧面部件的左右两端的一侧，并且具有上臂支撑部和下部 臂支撑部分，其中左右倾斜构件中的每一个在俯视图中相对于横向方向倾斜地延伸，以将上臂支撑部分和下臂支撑部分与第二横向构件的横向中间部分连接 。