摘要:
A monolithic component including, in an N-type lightly-doped substrate of a semiconductor wafer, two portions separated by a P-type insulating wall. A first portion of the two portions includes a high voltage lateral component, a layer of which substantially corresponds to the thickness of the wafer. The second portion includes logic circuit components. A rear surface of the substrate includes a P-type layer coated with a metallization. The insulating wall is in electrical contact with a low voltage terminal of the high voltage lateral component, such as the gate region of a thyristor. The logic portion includes at least one vertical component.
摘要:
A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering transistor being connected to the gate of the pilot thyristor.
摘要:
A programmable protection circuit comprises three identical units connected between a common point (C) and a first conductor (A), a second conductor (B) and ground (M). Each unit comprises the anti-parallel arrangement of a thyristor (T) and a diode (D), a bipolar transistor (TR) being connected between the gate and anode of the thyristor, the anodes of the thyristors being connected to the common point and the base terminal of each unit constituting a programmation terminal and being connected to a device defining a voltage threshold. Each device defining a voltage threshold is a zener diode (Z1, Z2, Z3) connected between each base terminal and the common point.
摘要:
An integrated circuit including an array of diodes includes first Schottky diodes, each of which is connected by its cathode to a point to be protected and by its anode to a reference voltage, and second Schottky diodes, each of which is connected by its anode to a point to be protected and by its cathode to the cathode of an avalanche diode, the anode of which is connected to the reference voltage. This integrated circuit includes, in a P-type substrate, a first and a second group of N-type wells; an ohmic contact and a Schottky contact on each well; an N-type region on the upper surface of the substrate; a metallization connecting the ohmic contacts of the first group of wells to the N-type region; a metallization connecting the Schottky contacts of the second wells; metallizations respectively connecting a Schottky contact of the second group of wells to an ohmic contact of the first wells; and a rear surface metallization.
摘要:
A programmable protection circuit comprises three identical units connected between a common point (C) and a first conductor (A), a second conductor (B) and ground (M). Each unit comprises the anti-parallel arrangement of a thyristor (T) and a diode (D), a bipolar transistor (TR) being connected between the gate and anode of the thyristor, the anodes of the thyristors being connected to the common point and the base terminal of each unit constituting a programmation terminal and being connected to a device defining a voltage threshold. Each device defining a voltage threshold is a zener diode (Z1, Z2, Z3) connected between each base terminal and the common point.
摘要:
A circuit for protecting lines such as telephone lines against positive or negative overvoltages having respective determined minimum values (+V1 and -V2). Between a common point (C) and a first conductor (A), a second conductor (B) and ground (M), are inserted first, second and third protection components, respectively constituted by a diode (D1, D2, D3) in anti-parallel with a thyristor (T1, T2, T3), the anode of which is connected to the common point and the gate of which receives a polarization signal. The first and second thyristors are of the cathode-gate type and the third (T1) of the anode-gate type. Each of the first and second thyristors is associated with a transistor (TR2, TR3). The emitter of each transistor is connected to the gate of the corresponding thyristor and the collector of each transistor is connected to a second common point (D) connected to the gate of the third thyristor.
摘要:
The present application provides an electrostatic discharge guard structure for photonic platform based photodiode systems. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode); a waveguide (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide into the Si or SiGe photodiode.
摘要:
A system and method is described that enables autonomic discovery of wireless network security mechanisms by mobile devices. Stateful monitoring of wireless devices facilitates identification of pending network connectivity loss, enabling a handoff server to proactively advertise new points of access and their associated security mechanisms to devices before connectivity is lost. As a result, devices may seamlessly transition between secure networks. Stateful monitoring of device reachability may be used together with device certificates and/or tokens to decrease the potential of MAC spoofing and further secure the network. Stateful monitoring of device connectivity status during network transitions facilitates the identification of rogue access points. The token or certificate on the device may be used to authenticate the device while transitioning between networks by a centralized entity, managing the initiation and the execution of the handover for the device.
摘要:
A system and method is described that enables autonomic discovery of wireless network security mechanisms by mobile devices. Stateful monitoring of wireless devices facilitates identification of pending network connectivity loss, enabling a handoff server to proactively advertise new points of access and their associated security mechanisms to devices before connectivity is lost. As a result, devices may seamlessly transition between secure networks. Stateful monitoring of device reachability may be used together with device certificates and/or tokens to decrease the potential of MAC spoofing and further secure the network. Stateful monitoring of device connectivity status during network transitions facilitates the identification of rogue access points. The token or certificate on the device may be used to authenticate the device while transitioning between networks by a centralized entity, managing the initiation and the execution of the handover for the device.
摘要:
A method and a protection switching arrangement for protection switching of any one of a plurality of optical signals of a multi-wavelength optical signal from the failure of an optical component is provided. The multi-wavelength optical signal which contains the optical signals is itself rerouted by the use of wavelength agnostic rerouting elements, after which a tunable optical filter is used to obtain from the multi-wavelength optical signal the particular optical signal which would have been affected by the failure. In embodiments of the invention where the failed component is a switching fabric, the multi-wavelength optical signal is rerouted away from the failed switching fabric through a redundant switching fabric after which the particular optical signal is obtained with use of the tunable optical filter.