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52 条记录 (耗时 0.049 秒)

    Surface acoustic wave filter device
    42.
    发明授权
    Surface acoustic wave filter device 有权
    表面声波滤波装置

    公开(公告)号：US06710676B2

    公开(公告)日：2004-03-23

    申请号：US10043133

    申请日：2002-01-14

    申请人： Masaru Yata ,  Kazunobu Shimoe ,  Yoichi Sawada ,  Hiroki Watanabe ,  Yuichi Takamine

    发明人： Masaru Yata ,  Kazunobu Shimoe ,  Yoichi Sawada ,  Hiroki Watanabe ,  Yuichi Takamine

    IPC分类号： H03H964

    CPC分类号： H03H9/0061 ,  H03H9/0042 ,  H03H9/0071 ,  H03H9/14591

    摘要： A surface acoustic wave filter device has a balance-unbalance conversion function and substantially equal input impedance and output impedance so as to increase out-of-passband attenuation. The surface acoustic wave filter device includes an unbalanced signal terminal, first and second balanced signal terminals, and first and second surface acoustic wave filters having input and output impedances. In each filter, one of the input and output impedances is approximately four times the other impedance. Additionally, 2n−1 first surface acoustic wave filters are connected between the unbalanced signal terminal and the first balanced signal terminal, and 2n−1 second surface acoustic wave filters are connected between the unbalanced signal terminal and the second balanced signal terminal, where n is an integer of 1 or more. The second surface acoustic wave filters are 180 degrees out-of-phase with respect to the first surface acoustic wave filters.

    摘要翻译： 表面声波滤波器装置具有平衡不平衡转换功能和基本相等的输入阻抗和输出阻抗，以便增加通带衰减。 表面声波滤波器装置包括不平衡信号端子，第一和第二平衡信号端子以及具有输入和输出阻抗的第一和第二声表面波滤波器。 在每个滤波器中，输入和输出阻抗之一约为另一个阻抗的四倍。 另外，2 第一声表面波滤波器连接在不平衡信号端子和第一平衡信号端子之间，并且2 第二声表面波滤波器连接在不平衡信号端子和第二平衡信号端子之间 信号端子，其中n是1或更大的整数。 第二声表面波滤波器相对于第一声表面波滤波器是180度异相。

    Multiple overlay printing and outputting device and multiple overlay printing system
    43.
    发明授权
    Multiple overlay printing and outputting device and multiple overlay printing system 失效
    多层印刷输出装置和多层印刷系统

    公开(公告)号：US5751924A

    公开(公告)日：1998-05-12

    申请号：US803919

    申请日：1997-02-26

    申请人： Takao Hamada ,  Takehiro Matsushita ,  Tizou Shirakata ,  Yoshio Shiromoto ,  Hiroki Watanabe

    发明人： Takao Hamada ,  Takehiro Matsushita ,  Tizou Shirakata ,  Yoshio Shiromoto ,  Hiroki Watanabe

    IPC分类号： B41J21/00 ,  G06F3/12 ,  G06K15/00 ,  G06F15/00

    CPC分类号： G06F3/1297 ,  G06K15/00 ,  G06F3/1295 ,  G06K2215/0082 ,  G06K2215/0091

    摘要： An overlay printing technique for use with a printing device is disclosed which enables multiple overlays to be defined for each the print page. Overlay data, overlay position information and overlay scale information for each of the overlays set up by an overlay set-up unit are transferred to an overlay storage unit by overlay transferring unit. Print processing unit expands overlay data stored in the overlay storage unit according to corresponding overlay position information and overlay scale information and prints the expanded data and print data obtained by expanding general print data for each print page. One or more overlays are placed in any positions within one print page which are determined by overlay position information and overlay scale information. For multiple-frame printing, a multiple-frame processing unit translates overlay position information and overlay scale information so that each overlay fits in a corresponding frame.

    摘要翻译： 公开了一种与打印设备一起使用的覆盖打印技术，其可以为每个打印页面定义多个重叠。 由叠加设置单元设置的每个覆盖层的覆盖数据，覆盖位置信息和覆盖比例信息被覆盖传输单元传送到覆盖存储单元。 打印处理单元根据相应的重叠位置信息和重叠比例信息扩展存储在叠加存储单元中的叠加数据，并打印通过扩展每个打印页面的一般打印数据而获得的扩展数据和打印数据。 一个或多个覆盖物被放置在由重叠位置信息和覆盖比例信息确定的一个打印页面内的任何位置。 对于多帧打印，多帧处理单元翻译覆盖位置信息和覆盖比例信息，使得每个覆盖符合相应的帧。

    Apparatus for crushing a calculus
    44.
    发明授权
    Apparatus for crushing a calculus 失效
    用于粉碎微积分的装置

    公开(公告)号：US4196736A

    公开(公告)日：1980-04-08

    申请号：US813004

    申请日：1977-07-05

    申请人： Hiroki Watanabe

    发明人： Hiroki Watanabe

    IPC分类号： A61B1/00 ,  A61B17/22 ,  A61B17/00

    CPC分类号： A61B17/22 ,  A61B2017/22091

    摘要： An instrument to remove stones from the human body such as stones in the gall bladder or kidney. An intracavitary tube is inserted in the organ where calculus is produced having an explosive charging chamber at the tip thereof. This explosive charging chamber is formed by a lid made of rigid material like metal except a fragile part made of less rigid materials and a triggering device for igniting the explosive from outside. The intracavitary tube is inserted into the organ, and the explosive charging chamber is brought near or in contact with the calculus, and then exploded to inflict a destructive force upon the calculus to crush it into small pieces, and the crushed small pieces are then eliminated from the human body.

    摘要翻译： 从人体去除石块的工具，如胆囊或肾脏中的石块。 将腔内管插入产生结石的器官中，其末端具有爆炸性充电室。 这种爆炸性充电室由金属制的盖子形成，除了由刚性较差的材料制成的脆弱部件和用于从外部点燃炸药的触发装置外，其它金属制成。 将腔内管插入器官，使炸药充气室靠近或与微积分接触，然后爆炸，对微积分造成破坏力，将其粉碎成小块，然后将粉碎的小块消除 来自人体。

    SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device
    45.
    发明授权
    SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device 有权
    SiC单晶衬底，SiC单晶外延晶片和SiC半导体器件

    公开(公告)号：US08470091B2

    公开(公告)日：2013-06-25

    申请号：US12656210

    申请日：2010-01-21

    申请人： Yasuo Kitou ,  Hiroki Watanabe ,  Masanori Nagaya ,  Kensaku Yamamoto ,  Eiichi Okuno

    发明人： Yasuo Kitou ,  Hiroki Watanabe ,  Masanori Nagaya ,  Kensaku Yamamoto ,  Eiichi Okuno

    IPC分类号： H01L29/24

    CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02609 ,  H01L29/045

    摘要： A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

    摘要翻译： 螺纹位错的位错线的方向对准，穿透位错的位错线的方向与[0001]取向c轴的角度等于或小于22.5度。 具有位错线以及[0001]取向c轴的穿透位错垂直于基面位错的位错线的方向。 因此，位错不会在c面上提供扩展位错，因此不会产生堆垛错误。 因此，当在具有作为[0001]取向c轴的穿透位错的位错线的方向的SiC单晶衬底中形成电子器件时，获得SiC半导体器件，使得器件特性优异 不劣化，制造产率不断提高。

    FUEL INJECTION CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE
    46.
    发明申请
    FUEL INJECTION CONTROL SYSTEM FOR INTERNAL COMBUSTION ENGINE 有权
    内燃机燃油喷射控制系统

    公开(公告)号：US20130000606A1

    公开(公告)日：2013-01-03

    申请号：US13539747

    申请日：2012-07-02

    申请人： Hiroki Watanabe ,  Naoki Toda ,  Shinya Hoshi ,  Satoru Sasaki

    发明人： Hiroki Watanabe ,  Naoki Toda ,  Shinya Hoshi ,  Satoru Sasaki

    IPC分类号： F02M51/00

    CPC分类号： F02D35/023 ,  F02D41/0025 ,  F02D41/402 ,  F02D41/403 ,  F02D41/405 ,  F02M61/1813 ,  Y02T10/44

    摘要： A fuel injection control system for an internal combustion engine is provided which is designed to perform pilot injection of fuel into the engine through a fuel injector prior to main injection. The system monitors a combustion state parameter representing a combustion state of the fuel within a combustion chamber of the engine which has been sprayed in the event of the pilot injection. When the combustion state parameter is determined as lying out of a stable combustion range where the fuel is to burn stably, the system changes the number of pilot injections to be executed prior to the main injection and/or the quantity of the fuel to be sprayed in each pilot injection, thereby enhancing the ignitability of the fuel in the pilot injection.

    摘要翻译： 提供一种用于内燃机的燃料喷射控制系统，其被设计成在主喷射之前通过燃料喷射器对燃料进行引燃喷射。 该系统监测燃料状态参数，该燃烧状态参数表示在先导喷射的情况下喷射的发动机的燃烧室内的燃料的燃烧状态。 当燃烧状态参数被确定为处于燃料稳定燃烧的稳定燃烧范围之内时，系统改变在主喷射之前执行的先导喷射数量和/或要喷射的燃料量 在每次先导喷射中，从而提高了先导喷射中的燃料的点火性。

    SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device
    50.
    发明申请
    SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device 有权
    SiC单晶衬底，SiC单晶外延晶片和SiC半导体器件

    公开(公告)号：US20100200866A1

    公开(公告)日：2010-08-12

    申请号：US12656210

    申请日：2010-01-21

    申请人： Yasuo Kitou ,  Hiroki Watanabe ,  Masanori Nagaya ,  Kensaku Yamamoto ,  Eiichi Okuno

    发明人： Yasuo Kitou ,  Hiroki Watanabe ,  Masanori Nagaya ,  Kensaku Yamamoto ,  Eiichi Okuno

    IPC分类号： H01L29/24

    CPC分类号： H01L29/1608 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02609 ,  H01L29/045

    摘要： A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

    摘要翻译： 螺纹位错的位错线的方向对准，穿透位错的位错线的方向与[0001]取向c轴的角度等于或小于22.5度。 具有位错线以及[0001]取向c轴的穿透位错垂直于基面位错的位错线的方向。 因此，位错不会在c面上提供扩展位错，因此不会产生堆垛错误。 因此，当在具有作为[0001]取向c轴的穿透位错的位错线的方向的SiC单晶衬底中形成电子器件时，获得SiC半导体器件，使得器件特性优异 不劣化，制造产率不断提高。