公开(公告)号：US07011707B2

公开(公告)日：2006-03-14

申请号：US10473074

申请日：2002-03-27

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Yoshihiro Irokawa ,  Kenji Ito

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Yoshihiro Irokawa ,  Kenji Ito

IPC分类号： C30B25/22

CPC分类号： C23C16/0272 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/32

摘要： A reaction prevention layer is formed to prevent Si from reacting with a gallium nitride group semiconductor (semiconductor crystal A) which is deposited after the reaction prevention layer is formed. By forming a reaction prevention layer comprising a material whose melting point or thermal stability is higher than that of a gallium nitride group semiconductor, e.g., AlN, on a sacrifice layer, a reaction part is not formed in the semiconductor substrate deposited on the reaction prevention layer when the gallium nitride group semiconductor is grown by crystal growth for a long time. In short, owing to the effect that the reaction prevention layer prevents silicon (Si) from diffusing, the reaction part is generated only in the sacrifice layer and it is never formed at the upper portion of the reaction prevention layer even by growing the semiconductor crystal A at a high temperature for a long time.

摘要翻译： 形成反应防止层，以防止Si与形成反应防止层之后沉积的氮化镓基半导体（半导体晶体A）发生反应。 通过在牺牲层上形成包含熔点或热稳定性高于氮化镓基半导体（例如AlN）的材料的反应防止层，在沉积在反应预防的半导体衬底中不形成反应部分 通过长时间的晶体生长生长氮化镓族半导体时的层。 简而言之，由于防反射层防止硅（Si）扩散，反应部分仅在牺牲层中产生，并且即使通过生长半导体晶体也不会形成在反应防止层的上部 A在高温下长时间。

公开(公告)号：US06716655B2

公开(公告)日：2004-04-06

申请号：US10160288

申请日：2002-06-04

申请人： Seiji Nagai ,  Masayoshi Koike ,  Kazuyoshi Tomita

发明人： Seiji Nagai ,  Masayoshi Koike ,  Kazuyoshi Tomita

IPC分类号： H01L3304

CPC分类号： C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L33/007

摘要： An object of the invention is to produce, at high efficiency, semiconductor elements which are formed of a high-quality crystalline semiconductor having no cracks and a low dislocation density and which have excellent characteristics. Specifically, a mask formed from SiO2 film is provided on the Si(111) plane of an n-type silicon substrate, and a window portion (crystal growth region) in the shape of an equilateral triangle having a side of approximately 300 &mgr;m is formed through the mask. The three sides of the equilateral triangle are composed of three edges; each edge defined by the (111) plane and another crystal plane that is cleavable. Subsequently, a multi-layer structure of semiconductor crystals in an LED is formed through crystal growth of a Group III nitride compound semiconductor. Thus, limiting the area of one crystal growth region to a considerably small area weakens a stress applied to a semiconductor layer, thereby readily producing semiconductor elements having excellent crystallinity. In addition, semiconductor elements can be arranged in a semiconductor wafer at high packing density without loss, and each side of these semiconductor elements can be readily arranged in a line on a semiconductor wafer, thereby enhancing quality, yield, productivity, etc. of semiconductor elements.

摘要翻译： 本发明的目的是高效率地制造由没有裂纹和位错密度低且具有优异特性的高品质结晶半导体形成的半导体元件。 具体地，在n型硅衬底的Si（111）面上设置由SiO 2膜形成的掩模，并且形成具有约300μm侧面的等边三角形形状的窗口部分（晶体生长区域） 通过面具。 等边三角形的三面由三边组成， 每个边缘由（111）面和另一个可切割的晶体平面限定。 随后，通过III族氮化物化合物半导体的晶体生长，形成LED中的半导体晶体的多层结构。 因此，将一个晶体生长区域的面积限制在相当小的面积上，削弱施加到半导体层的应力，从而容易地制造具有优异结晶度的半导体元件。 此外，半导体元件可以以高封装密度无损耗地布置在半导体晶片中，并且这些半导体元件的每一侧可以容易地布置在半导体晶片上的线上，从而提高半导体的质量，产量，生产率等 元素。

公开(公告)号：US06471770B2

公开(公告)日：2002-10-29

申请号：US09748234

申请日：2000-12-27

申请人： Masayoshi Koike ,  Seiji Nagai

发明人： Masayoshi Koike ,  Seiji Nagai

IPC分类号： C30B2522

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01L33/0079 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/32341

摘要： A thick GaN layer is grown on sapphire through an Au layer at a temperature lower than the melting point of 1064° C. of the Au layer, and temperature of a sample is raised to reach and exceed the melting point of the Au layer so that the Au layer is dissolved. In this state, the sapphire and GaN layer are separated from each other.

摘要翻译： 在低于Au层的1064℃的熔点的温度下，通过Au层在蓝宝石上生长厚的GaN层，使样品的温度升高到超过Au层的熔点，使得 Au层溶解。 在这种状态下，蓝宝石和GaN层彼此分离。

公开(公告)号：US06326236B1

公开(公告)日：2001-12-04

申请号：US09497814

申请日：2000-02-03

申请人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

发明人： Norikatsu Koide ,  Shinya Asami ,  Junichi Umezaki ,  Masayoshi Koike ,  Shiro Yamasaki ,  Seiji Nagai

IPC分类号： H01L2144

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L29/155 ,  H01L33/06 ,  Y10S438/933

摘要： In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1−Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1−Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

公开(公告)号：US6076820A

公开(公告)日：2000-06-20

申请号：US66903

申请日：1998-04-28

申请人： Seiji Nagai ,  Hiroaki Yoshida

发明人： Seiji Nagai ,  Hiroaki Yoshida

IPC分类号： B41J11/00 ,  B65H5/02 ,  F16D1/05 ,  F16D3/48 ,  G03G15/00 ,  B65H55/22 ,  F16D1/00

CPC分类号： B65H5/021 ,  G03G15/6558 ,  B65H2403/21 ,  B65H2403/70 ,  G03G2215/0119 ,  Y10T403/602

摘要： In a rotation transfer device, a paper feeding apparatus and an image forming apparatus, transfer projections are disposed on coupling members provided on the ends of a driving shaft and a driven shaft, so that the movement of one transfer projection in the peripheral direction can be constrained by the other transfer projection and a positioning member. Thus, rotation irregularity caused by reverse rotation torque applied by a function from the side of paper can be prevented.

摘要翻译： 在旋转传送装置中，送纸装置和图像形成装置，转印突起设置在设置在驱动轴和从动轴的端部上的联接构件上，使得一个转印突起沿周向的移动可以是 由另一转移突起和定位构件约束。 因此，能够防止由纸侧产生的由功能引起的反转扭矩引起的旋转不规则。

公开(公告)号：US5615001A

公开(公告)日：1997-03-25

申请号：US496401

申请日：1995-06-29

申请人： Masato Kawashima ,  Hideyuki Shimobuchi ,  Hiroyuki Okitsu ,  Masato Matsuzuki ,  Hiroaki Yoshida ,  Michihiro Fujii ,  Yukinari Okawa ,  Masaru Iida ,  Katsuyasu Ito ,  Yukihide Toda ,  Seiji Nagai

发明人： Masato Kawashima ,  Hideyuki Shimobuchi ,  Hiroyuki Okitsu ,  Masato Matsuzuki ,  Hiroaki Yoshida ,  Michihiro Fujii ,  Yukinari Okawa ,  Masaru Iida ,  Katsuyasu Ito ,  Yukihide Toda ,  Seiji Nagai

IPC分类号： G03G15/00 ,  G03G15/01 ,  G03G21/16

CPC分类号： G03G21/1676 ,  G03G15/0194 ,  G03G21/1623 ,  G03G2215/0119 ,  G03G2221/1684

摘要： A plurality of electrostatic recording units are arranged in series along a path for moving a recording sheet of paper, and charged toner images having different colors are formed on the sheet of paper travelled through the path. A paper feeder unit is arranged beneath a paper introduction side of the paper moving path. The sheet of paper carrying the toner image formed thereon is ejected from a paper ejection side of the paper moving path, and is sent to a fixer in which the toner image is fixed on the sheet of paper. The sheet of paper carrying the toner image fixed thereon is sent to a paper receiver tray positioned above the fixer.

摘要翻译： 多个静电记录单元沿着用于移动记录纸的路径串联布置，并且在通过路径行进的纸张上形成具有不同颜色的带电调色剂图像。 供纸单元布置在纸张移动路径的纸介质侧下方。 携带形成在其上的调色剂图像的纸张从纸张移动路径的纸排出侧排出，并被送到其中调色剂图像被固定在纸张上的定影剂。 将固定在其上的调色剂图像的纸张送到位于定影剂上方的收纸盘。

公开(公告)号：US5267350A

公开(公告)日：1993-11-30

申请号：US603998

申请日：1990-10-25

申请人： Kenji Matsubara ,  Seiji Nagai ,  Tohru Shonai ,  Akihiro Fuseda

发明人： Kenji Matsubara ,  Seiji Nagai ,  Tohru Shonai ,  Akihiro Fuseda

IPC分类号： G06F9/38 ,  G06F9/00 ,  G06F9/30 ,  G06F9/312

CPC分类号： G06F9/3814 ,  G06F9/3802

摘要： An instruction fetch control method is generally arranged so as to have a plurality of instruction buffers, issue an instruction read request to a memory when a part of the instruction buffers becomes in an empty state and store a fetched instruction in the instruction buffer in an empty state. A flag is provided for specifying another instruction buffer which becomes in an empty state after the instruction stored in the instruction buffer is transmitted to a decoder. The quantity of instructions to be stored in the instruction buffer is made variable in accordance with output of the flag latch, and the fetched instruction is stored in the instruction buffer in an empty state. This arrangement enables a plurality of instructions fetched upon an instruction read request to be stored in the empty instruction buffers, thereby reducing the number of read requests issued.

摘要翻译： 指令获取控制方法通常被布置为具有多个指令缓冲器，当指令缓冲器的一部分变为空状态时，向存储器发出指令读取请求，并将指令缓冲器中的取指令存储在空 州。 提供了一种标志，用于指定在存储在指令缓冲器中的指令被发送到解码器之后变为空状态的另一指令缓冲器。 存储在指令缓冲器中的指令量根据标志锁存器的输出而变化，并且取出的指令以空状态存储在指令缓冲器中。 这种布置使得可以在指令读取请求中取出的多个指令被存储在空指令缓冲器中，从而减少发出的读请求数。

公开(公告)号：US4421697A

公开(公告)日：1983-12-20

申请号：US375716

申请日：1982-05-07

申请人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

发明人： Kiyomi Taguchi ,  Osamu Terada ,  Noriaki Morishita ,  Hiroshi Mihashi ,  Seiji Nagai

IPC分类号： B22D41/02 ,  F27D1/16 ,  F27D3/00

CPC分类号： F27D1/1626 ,  F27D2003/0007 ,  F27D2003/0038

摘要： There is disclosed the distribution of an amorphous refractory in a case where a lining frame is positioned within a molten metal vessel preliminarily lined with a permanent lining refractory and the amorphous refractory is cast into the space between the permanent lining refractory and the lining frame thereby applying a lining to the inner surface of the vessel.A conical distributor is arranged above the lining frame and the amorphous refractory is continuously delivered from a rotary chute onto the distributor so as to describe a concentric path of moving falling points.

摘要翻译： 公开了在衬里框架位于预先排列有永久性衬里耐火材料的熔融金属容器内的情况下的非晶态耐火材料的分布，并且将非晶态耐火材料浇注到永久性衬里耐火材料和衬里框架之间的空间中，从而施加 衬里到容器的内表面。 锥形分配器布置在衬里框架的上方，非晶态耐火材料从旋转滑道连续地传送到分配器上，以便描述移动落点的同心路径。