公开(公告)号：US06231696B1

公开(公告)日：2001-05-15

申请号：US09276206

申请日：1999-03-25

申请人： Karl-Ernst Hensger ,  Robert F. Davis

发明人： Karl-Ernst Hensger ,  Robert F. Davis

IPC分类号： C21D109

CPC分类号： C21D8/0215 ,  B21B1/466 ,  C21D8/0226 ,  C22C38/02

摘要： A method of manufacturing microalloyed structural steels by rolling in a CSP plant or compact strip production plant, wherein the cast slab strand is supplied divided into rolling lengths through an equalizing furnace to a multiple-stand CSP rolling train and is continuously rolled in the rolling train into hot-rolled wide strip, wherein the strip is cooled in a cooling section and is reeled into coils, and wherein, for achieving optimum mechanical properties, a controlled structure development by thermomechanical rolling is carried out as the thin slab travels through the CSP plant. For manufacturing high-strength microalloyed structural steels with a yield point of ≧480 MPa, the available strengthening mechanisms are utilized in a complex manner in order to achieve an optimum property complex with respect to strength and toughness of the structural steels, by carrying out, in addition to the thermomechanical rolling with the method steps according to U.S. patent application Ser. No. 09/095,338 filed Jun. 10, 1998, now U.S. Pat. No. 6,030,470, a further influence on the structure of the thin slabs by changing the material composition in order to achieve a specific mixed crystal strengthening by an increased silicon content and/or a complex mixed crystal strengthening by an increased content of copper, chromium, nickel.

摘要翻译： 一种通过在CSP设备或紧凑型带材生产设备中轧制制造微合金化结构钢的方法，其中铸造扁坯线材通过均化炉被分成轧制长度到多台式CSP轧制机组，并且在轧制列车 进入热轧宽带，其中带材在冷却部分中冷却并卷成线圈，并且其中为了获得最佳的机械性能，当薄板坯穿过CSP设备时，通过热机械轧制进行受控结构的开发 。 为了制造屈服点> 480MPa的高强度微合金结构钢，为了通过实施结构钢的强度和韧性达到最佳性能复合物，以复杂的方式使用可用的强化机理 ，除了根据美国专利申请Ser。的方法步骤的热机械轧制。 1998年6月10日提交的No.09 / 095,338，现为美国专利No. 通过改变材料组成以通过增加的硅含量和/或通过增加铜，铬等的增加的混合晶体强化来实现特定的混晶化强化，进一步影响薄板坯的结构， 镍。

公开(公告)号：US5935648A

公开(公告)日：1999-08-10

申请号：US825488

申请日：1997-03-28

申请人： Scott L. Roberson ,  Duane Finello ,  Robert F. Davis

发明人： Scott L. Roberson ,  Duane Finello ,  Robert F. Davis

IPC分类号： C23C16/34 ,  H01G9/04 ,  H01G9/042 ,  C23C16/00

CPC分类号： H01G9/042 ,  C23C16/34 ,  Y02T10/7022

摘要： High surface area Mo.sub.2 N or MoN electrodes for use in high energy density energy storage devices, and processes for fabricating the electrodes, are described wherein a precursor molybdenum solution is applied to a metallic foil substrate which is heated to produce a MoO.sub.3 coating on the substrate, which coating is converted to Mo.sub.2 N and MoN by reaction with ammonia. Mo.sub.2 N and MoN electrodes are also produced in a chemical vapor deposition process in which molybdenum pentachloride carried by an inert gas and ammonia are the reaction gases for producing Mo.sub.2 N and MoN films.

摘要翻译： 本发明描述了用于高能量密度储能装置的高表面积Mo2N或MoN电极以及用于制造电极的方法，其中将前体钼溶液施加到金属箔基底上，该金属箔基底被加热以在基底上产生MoO 3涂层， 该涂层通过与氨的反应转化为Mo2N和MoN。 Mo2N和MoN电极也是在化学气相沉积工艺中生产的，其中由惰性气体和氨承载的五氯化钼是用于生产Mo2N和MoN膜的反应气体。

公开(公告)号：US5087576A

公开(公告)日：1992-02-11

申请号：US356333

申请日：1989-05-24

申请人： John A. Edmond ,  Robert F. Davis

发明人： John A. Edmond ,  Robert F. Davis

IPC分类号： H01L21/04

CPC分类号： H01L21/046

摘要： The invention is a method of ion implantation of dopant ions into a substrate of silicon carbide. In the method, the implantation takes place at elevated temperatures, following which the substrate may be oxidized or annealed.

摘要翻译： 本发明是将掺杂剂离子离子注入碳化硅衬底的方法。 在该方法中，注入在升高的温度下进行，随后可以对衬底进行氧化或退火。

公开(公告)号：US4947218A

公开(公告)日：1990-08-07

申请号：US116446

申请日：1987-11-03

申请人： John A. Edmond ,  Robert F. Davis

发明人： John A. Edmond ,  Robert F. Davis

IPC分类号： H01L21/04 ,  H01L29/06 ,  H01L29/24 ,  H01L29/40 ,  H01L29/861

CPC分类号： H01L29/402 ,  H01L21/046 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/8611 ,  H01L29/8613 ,  Y10S438/931

摘要： The invention comprises a method of forming a diode which is operable at high temperature, at high power levels, and under conditions of high radiation density. The method comprises bombarding a region of a substrate of doped silicon carbide having a first conductivity type with high temperature ion implantation of doping ions into the substrate to give the bombarded region an opposite conductivity type. Regions of opposite conductivity type adjacent one another and a respective p-n junction are thereby formed. Ohmic contacts are added to the substrate and to the bombarded region to complete the diode.

摘要翻译： 本发明包括一种形成二极管的方法，该二极管可在高功率水平和高辐射密度的条件下在高温下操作。 该方法包括：将具有第一导电类型的掺杂碳化硅的衬底的区域轰击，将掺杂离子高温离子注入到衬底中，以使轰击区域具有相反的导电类型。 由此形成彼此相邻的相反导电类型的区域和相应的p-n结。 将欧姆接触物添加到基底和轰击区域以完成二极管。

公开(公告)号：US09470650B2

公开(公告)日：2016-10-18

申请号：US13880566

申请日：2011-10-20

申请人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

发明人： Jason Gu ,  Jacob H. Melby ,  Robert F. Davis

IPC分类号： G01N27/414

CPC分类号： G01N27/414 ,  G01N27/4141

摘要： Sensors for sensing/measuring one or more analytes in a chemical environment. Each sensor is based on a semiconductor structure having an interfacial region containing a two-dimensional electron gas (2DEG). A catalyst reactive to the analyte(s) is in contact with the semiconductor structure. Particles stripped from the analyte(s) by the catalyst passivate the surface of the semiconductor structure at the interface between the catalyst and the structure, thereby causing the charge density in the 2DEG proximate the catalyst to change. When this basic structure is incorporated into an electronic device, such as a high-electron-mobility transistor (HEMT) or a Schottky diode, the change in charge density manifests into a change in an electrical response of the device. For example, in an HEMT, the change in charge density manifests as a change in current through the transistor, and, in a Schottky diode, the change in charge density manifests as a change in capacitance.

摘要翻译： 用于在化学环境中感测/测量一种或多种分析物的传感器。 每个传感器基于具有包含二维电子气（2DEG）的界面区域的半导体结构。 对分析物反应的催化剂与半导体结构接触。 通过催化剂从分析物中剥离的颗粒在催化剂和结构之间的界面处钝化半导体结构的表面，从而导致靠近催化剂的2DEG中的电荷密度改变。 当将该基本结构并入诸如高电子迁移率晶体管（HEMT）或肖特基二极管的电子器件中时，电荷密度的变化表现为器件的电响应的变化。 例如，在HEMT中，电荷密度的变化表现为通过晶体管的电流的变化，并且在肖特基二极管中，电荷密度的变化表现为电容的变化。

公开(公告)号：US20140083487A1

公开(公告)日：2014-03-27

申请号：US13626838

申请日：2012-09-25

申请人： E. David Santoleri ,  Robert F. Davis

发明人： E. David Santoleri ,  Robert F. Davis

IPC分类号： H01L31/048 ,  B32B27/34 ,  B29C49/04 ,  B32B7/02 ,  B32B27/04 ,  B29C47/06 ,  H01L31/0203 ,  B32B27/06

摘要： An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together. The backsheet of the invention improves upon the efficiency, strength, weather resistance, cost, and useful life of the solar panels in which the backsheet is incorporated.

摘要翻译： 公开了一种用于建造太阳能电池板的改进的底片。 还公开了一种制造包括底片的底片和太阳能面板的方法，包括共挤出工艺。 另外，公开了包括本发明的背板的光伏太阳能电池板组件。 本发明的底片可以包括具有内表面和外表面的外层，具有内表面和外表面的中间层，以及具有内表面和外表面的内层。 在本发明的一个实施例中，中间层的外表面可以与外层的内表面邻接，并且中间层的内表面可以邻接于内层的外表面。 外层，中间层和内层可以通过共挤出方法邻接，由此不需要使用用于将底片的层粘合在一起的粘合剂。 本发明的底片改善了其中结合有底片的太阳能面板的效率，强度，耐候性，成本和使用寿命。

公开(公告)号：US20120167955A1

公开(公告)日：2012-07-05

申请号：US12807423

申请日：2010-09-02

申请人： Robert F. Davis ,  E. David Santoleri

发明人： Robert F. Davis ,  E. David Santoleri

IPC分类号： H01L31/048

CPC分类号： H01L31/049 ,  Y02E10/50

摘要： Solar panels of ethylene-vinyl acetate copolymer resin having at least one layer of substantially clear encapsulant and a second layer of laminar encapsulant having a substantially clear layer and a pigmented layer provide excellent long term performance.

摘要翻译： 具有至少一层基本上清楚的密封剂的乙烯 - 乙酸乙烯酯共聚物树脂的太阳能电池板和具有基本透明的层和着色层的第二层层状密封剂提供了优异的长期性能。

公开(公告)号：US07682709B1

公开(公告)日：2010-03-23

申请号：US08550195

申请日：1995-10-30

申请人： Robert F. Davis ,  Cheng Wang

发明人： Robert F. Davis ,  Cheng Wang

IPC分类号： B32B18/00

CPC分类号： H01L33/325 ,  C30B23/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02631 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/861

摘要： A method of preparing an n-type epitaxial layer of aluminum nitride conductively doped with germanium comprises directing a molecular beam of aluminum atoms onto the growth surface of a substrate that provides an acceptable lattice match for aluminum nitride; directing a molecular beam of activated nitrogen to the growth surface of the substrate; and directing a molecular beam of germanium to the growth surface of the substrate; while maintaining the growth surface of the substrate at a temperature high enough to provide the surface mobility and sticking coefficient required for epitaxial growth, but lower than the temperature at which the surface would decompose or the epitaxial layer disassociate back into atomic or molecular species.

摘要翻译： 制备导电掺杂锗的氮化铝的n型外延层的方法包括将铝原子的分子束引导到提供氮化铝可接受的晶格匹配的衬底的生长表面上; 将活性氮的分子束引导到基底的生长表面; 并将锗的分子束引导到所述衬底的生长表面; 同时将衬底的生长表面保持在足够高的温度以提供外延生长所需的表面迁移率和粘附系数，但低于表面将分解的温度或外延层解离成原子或分子物质。

公开(公告)号：US07095062B2

公开(公告)日：2006-08-22

申请号：US11074485

申请日：2005-03-08

申请人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

发明人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

IPC分类号： H01L29/12

CPC分类号： H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.

公开(公告)号：US06864160B2

公开(公告)日：2005-03-08

申请号：US10115354

申请日：2002-04-03

申请人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

发明人： Kevin J. Linthicum ,  Thomas Gehrke ,  Robert F. Davis

IPC分类号： H01L21/20

CPC分类号： H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.

摘要翻译： 衬底包括在其间限定沟槽的非氮化镓柱，其中非氮化镓柱包括非氮化镓侧壁和非氮化镓顶部，并且沟槽包括非镓层。 氮化镓在非氮化镓柱上生长，包括在非氮化镓顶上。 优选地，在非氮化镓顶上生长氮化镓金字塔，然后在氮化镓金字塔上生长氮化镓。 氮化镓金字塔优选在第一温度下生长，并且氮化镓优选在高于第一温度的第二温度下生长在锥体上。 第一温度优选为约1000℃以下，第二温度优选为约1100℃以上。 然而，除了温度之外，相同的加工条件优选用于两个生长步骤。 金字塔上生长的氮化镓优选聚结形成连续的氮化镓层。 因此，可以在氮化镓生长过程中不需要形成掩模来生长氮化镓。 此外，可以使用与温度变化以外的相同的处理条件来进行氮化镓生长。 因此，可以进行不间断的氮化镓生长。