摘要:
A method of preparing an n-type epitaxial layer of aluminum nitride conductively doped with germanium comprises directing a molecular beam of aluminum atoms onto the growth surface of a substrate that provides an acceptable lattice match for aluminum nitride; directing a molecular beam of activated nitrogen to the growth surface of the substrate; and directing a molecular beam of germanium to the growth surface of the substrate; while maintaining the growth surface of the substrate at a temperature high enough to provide the surface mobility and sticking coefficient required for epitaxial growth, but lower than the temperature at which the surface would decompose or the epitaxial layer disassociate back into atomic or molecular species.
摘要:
Laminates of ethylene-vinyl acetate copolymer resin with opacifying pigment provide excellent performance as backing sheets for photovoltaic cells.
摘要:
Laminates of having a first outer layer of weatherable film, at least one mid layer, and a second outer layer containing an opacifying quantity of white pigment. The laminates are particularly useful for protecting photovoltaic cells, solar panels, and circuit boards. In photovoltaic cells, the laminates result in increased power generation.
摘要:
A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1×1017 cm−3. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.
摘要:
A gallium nitride semiconductor layer is fabricated by masking an underlying gallium nitride layer with a first mask that includes a first array of openings therein and growing the underlying gallium nitride layer through the first array of openings and onto the first mask, to thereby form a first overgrown gallium nitride semiconductor layer. The first overgrown layer is then masked with the second mask that includes a second array of openings therein. The second array of openings is laterally offset from the first array of openings. The first overgrown gallium nitride layer is then grown through the second array of openings and onto the second mask, to thereby form a second overgrown gallium nitride semiconductor layer. Microelectronic devices may then be formed in the second overgrown gallium nitride semiconductor layer.
摘要:
An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.
摘要:
An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.
摘要:
Laminates of polyvinylidene fluoride films and sheets of resins thermoformable at temperatures greater than about 500° F. (260° C.), three dimensional structures formed therefrom and processes for their manufacture and use are disclosed.
摘要:
The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface of seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
摘要:
An improved backsheet used in the construction of solar panels is disclosed. A method of manufacturing the backsheet and solar panel comprising the backsheet, including coextrusion processes are also disclosed. Additionally, a photovoltaic solar panel module comprising the backsheet of the invention is disclosed. The backsheet of the instant invention may comprise an exterior layer having inner and outer surfaces, a middle layer, having inner and outer surfaces, and an interior layer having inner and outer surfaces. In one embodiment of the invention, the outer surface of the middle layer may be adjoined to the inner surface of the exterior layer, and the inner surface of the middle layer may be adjoined to the outer surface of the interior layer. The exterior layer, middle layer, and interior layer may be adjoined via a co-extrusion process, thereby eliminating the need for the use of adhesives for bonding the layers of the backsheet together. The backsheet of the invention improves upon the efficiency, strength, weather resistance, cost, and useful life of the solar panels in which the backsheet is incorporated.