摘要:
A semiconductor device includes a semiconductor chip, and a micro-chip which is electrically connected to the chip, and includes a thickness which is less than a thickness of the chip.
摘要:
A semiconductor device includes a carrier, a semiconductor chip formed on the carrier, and a micro-chip which is electrically connected to the chip, and includes a thickness which is less than a thickness of the chip.
摘要:
A system and method for injection molding conductive bonding material into a plurality of cavities in a non-rectangular mold is disclosed. The method comprises aligning a fill head with a non-rectangular mold. The non-rectangular mold includes a plurality of cavities. The fill head is placed in substantial contact with the non-rectangular mold. Rotational motion is provided to at least one of the non-rectangular mold and the fill head while the fill head is in substantial contact with the non-rectangular mold. Conductive bonding material is forced out of the fill head toward the non-rectangular mold. The conductive bonding material is provided into at least one cavity of the plurality of cavities contemporaneous with the at least one cavity being in proximity to the fill head.
摘要:
A process and structure for enabling the creation of reliable electrical through-via connections in a semiconductor substrate and a process for filling vias. Problems associated with under etch, over etch and flaring of deep Si RIE etched through-vias are mitigated, thereby vastly improving the integrity of the insulation and metallization layers used to convert the through-vias into highly conductive pathways across the Si wafer thickness. By using an insulating collar structure in the substrate in one case and by filling the via in accordance with the invention in another case, whole wafer yield of electrically conductive through vias is greatly enhanced.
摘要:
A method for forming interconnects onto attachment points of a wafer includes the steps of providing a mold with a plurality of cavities having a predetermined shape, depositing a release agent on surfaces of the cavities, filling the cavities with an interconnect material to form the interconnects, removing the release agent from the mold, and attaching the interconnects to the attachment points of the wafer. An adhesive layer can optionally be deposited in addition to the release layer. The adhesive layer can be used, for example, to bond the chip to a package.
摘要:
A method for fabricating a device adapted for precision aligning integrated circuits having small-scale architecture in a stack, the method includes obtaining dimensions of the integrated circuits; fabricating a precision guide using the dimensions; and fabricating alignment fiducials into at least one of the precision guide and a carrier wafer. A method for placing integrated circuits having small-scale architecture into a stack, the method includes selecting a device adapted for precision aligning the integrated circuits into the stack and precision aligning the integrated circuits into the stack.
摘要:
A computer chip is structured to have at least one single-layered chip, at least one multi-layered chip stack, and a carrier package characterized by electrical interconnections of less than 100 microns diameter, wherein the single-layered chip and the multi-layered chip stack are each electrically coupled to the electrical interconnections of the carrier package, and the single-layered chip is communicatively coupled to the multi-layered chip stack through the carrier package so that an electrical signal propagates over a given distance between the single-layered chip and the multi-layered chip stack at substantially a speed of propagation for a single layer chip over the given distance. The single-layered chip can be a processor having multi-cores and the multi-layered chip stack can be a memory cache stack. Interconnect vias, having a density at least as great as 2500 interconnects/cm2 electrically couple the single-layered chip and the multi-layered chip stack to the carrier package.
摘要翻译:计算机芯片被构造成具有至少一个单层芯片,至少一个多层芯片堆叠和以小于100微米直径的电互连为特征的载体封装,其中单层芯片和多层芯片 芯片堆叠都电耦合到载体封装的电互连,并且单层芯片通过载体封装通信地耦合到多层芯片堆叠,使得电信号在单层之间传递给定距离 芯片和多层芯片堆栈,在给定距离内的单层芯片基本上是传播速度。 单层芯片可以是具有多核的处理器,并且多层芯片堆栈可以是存储器高速缓存堆栈。 具有至少高达2500个互连/ cm 2的密度的互连通孔将单层芯片和多层芯片堆叠电耦合到载体封装。
摘要:
An apparatus for integrating optical devices between a module and a circuit board comprising a carrier having optical waveguides, a module having optical ports on a surface of the module, the surface of the module connected to the carrier such that the optical waveguides are in communication with the optical ports; and a circuit board having optical ports on a surface of the circuit board, the surface of the circuit board connected to the carrier such that the optical waveguides are in communication with the optical ports. The apparatus may also integrate electrical ports on the surface of the module, the surface of the circuit board, and electrical connections on the carrier. The apparatus may also integrate circuit chips having optical ports for communication with the optical waveguides.