公开(公告)号：US08691708B2

公开(公告)日：2014-04-08

申请号：US13012320

申请日：2011-01-24

申请人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai ,  Takashi Yokogawa

发明人： Yukinao Kaga ,  Tatsuyuki Saito ,  Masanori Sakai ,  Takashi Yokogawa

IPC分类号： H01L21/31

CPC分类号： H01L21/32051 ,  C23C16/34 ,  C23C16/45523 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/28562

摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.

摘要翻译： 一种制造半导体器件的方法和能够以更高的成膜速度提供TiN膜的衬底处理设备。 该方法包括将衬底加载到处理室中; 同时开始供应第一处理气体和第二处理气体以在基板上形成膜，同时停止供应第一和第二处理气体; 从处理室中除去剩余的第一和第二处理气体; 在不提供第一处理气体的情况下将第二处理气体供应到处理室中; 除去所述第二处理气体，然后停止将所述第一处理气体供给到所述处理室中，而不供给所述第二处理气体; 去除第一处理气体; 并从处理室卸载基板。

公开(公告)号：US08598047B2

公开(公告)日：2013-12-03

申请号：US13270811

申请日：2011-10-11

申请人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Toru Kagaya ,  Hirohisa Yamazaki

IPC分类号： H01L21/31

CPC分类号： H01L21/3162 ,  C23C16/403 ,  C23C16/45546 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/67109

摘要： A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.

摘要翻译： 基板处理装置包括反应管和加热硅晶片的加热器。 将三甲基铝（TMA）和臭氧（O3）交替地进料到反应管中，以在晶片的表面上产生Al 2 O 3膜。 该设备还包括供应管和用于使臭氧和TMA流动的喷嘴和向反应管供应气体的喷嘴。 两个供应管连接到设置在加热器内部的喷嘴内的温度低于晶片温度的反应管内的区域，臭氧和TMA通过喷嘴供应到反应管中。

公开(公告)号：US20130029210A1

公开(公告)日：2013-01-31

申请号：US13581664

申请日：2011-01-07

申请人： Satoshi Minoura ,  Masanori Sakai ,  Shinsuke Kobayashi ,  Koji Kogure

发明人： Satoshi Minoura ,  Masanori Sakai ,  Shinsuke Kobayashi ,  Koji Kogure

IPC分类号： H01M2/02

CPC分类号： H01M2/1633 ,  H01M4/14 ,  H01M4/621 ,  H01M4/622 ,  H01M4/625 ,  H01M4/627 ,  H01M10/06 ,  Y02E60/126 ,  Y02T10/7016

摘要： In a liquid-type lead acid storage battery in which charging is performed for a short time intermittently and high-rate discharging to load is performed in a partially charged state, there are used a positive electrode plate in which the utilization rate of a positive electrode activation substance is set to a range of 50% to 65%, and a negative electrode plate in which a carbonaceous electroconductive material and a bisphenol/aminobenzenesulfonic acid/formaldehyde condensate are added to the negative electrode activation substance, thereby improving the charge acceptance and the lifespan performance; and a separator whose surface disposed opposite the negative electrode plate is formed from a nonwoven fabric made of a material selected from glass, pulp, and polyolefin, is used as a separator; whereby the charge acceptance and the lifespan performance under PSOC are improved.

摘要翻译： 在部分充电状态下，在短时间内进行充电且负荷高速放电的液体型铅酸蓄电池中，使用正极板，其中正极 将活化物质设定为50〜65％的范围，在负极活性物质中添加碳质导电性物质和双酚/氨基苯磺酸/甲醛缩合物的负极板，从而提高电荷接受性， 寿命表现; 并且使用由选自玻璃，纸浆和聚烯烃的材料制成的无纺布形成的与负极板相对的表面的隔板用作隔膜; 从而提高了PSOC下的充电接受度和使用寿命。

公开(公告)号：US20120240348A1

公开(公告)日：2012-09-27

申请号：US13489018

申请日：2012-06-05

申请人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

发明人： Kazuyuki OKUDA ,  Toru Kagaya ,  Masanori Sakai

IPC分类号： B08B7/04 ,  B08B5/02

CPC分类号： B08B5/00 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02057 ,  H01L21/67253

摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.

摘要翻译： 一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管， 反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点 反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

公开(公告)号：US08030429B2

公开(公告)日：2011-10-04

申请号：US12521057

申请日：2007-12-27

申请人： Yasushi Sugiura ,  Masanori Sakai

发明人： Yasushi Sugiura ,  Masanori Sakai

IPC分类号： C08G77/08

CPC分类号： B01J31/0239 ,  B01J2231/76 ,  C07F7/0836 ,  C07F7/0874 ,  C07F7/0876 ,  C08G77/08

摘要： In the present invention, when an organopolysiloxane is produced by a dealcoholization condensation reaction between a silicon atom-bonded hydroxy group and a silicon atom-bonded alkoxy group, a quaternary ammonium ion-containing compound such as an alkylammonium hydroxide compound or a silanolate thereof is used as a catalyst. The catalyst for the dealcoholization condensation reaction of the present invention is easily removed after use and is stable. For this reason, when an organopolysiloxane is produced using the aforementioned catalyst, it is not necessary to use complicated production steps or a large amount of the catalyst.

摘要翻译： 在本发明中，当通过与硅原子键合的羟基与硅原子键合的烷氧基之间的脱醇缩合反应生产有机聚硅氧烷时，含季铵离子的化合物如烷基氢氧化铵化合物或其硅烷醇盐是 用作催化剂。 本发明的脱醇缩合反应用催化剂在使用后容易除去，稳定。 因此，使用上述催化剂制造有机聚硅氧烷时，不需要复杂的制造工序或大量的催化剂。

公开(公告)号：US08003547B2

公开(公告)日：2011-08-23

申请号：US12850863

申请日：2010-08-05

申请人： Masanori Sakai

发明人： Masanori Sakai

IPC分类号： H01L21/31

CPC分类号： G05D7/0635 ,  C23C16/4485 ,  C23C16/52

摘要： A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a liquid source supply system supplying a liquid source into the process chamber; a solvent supply system supplying a solvent having a vapor pressure greater than that of the liquid source into the process chamber; a liquid flowrate control device controlling flowrates of the liquid source and the solvent; and a controller controlling the liquid source supply system, the solvent supply system, and the liquid flowrate control device so that the solvent is supplied into the liquid flowrate control device than the solvent supply system to confirm an operation of the liquid flowrate control device before the liquid source supply system supplies the liquid source into the process chamber.

摘要翻译： 提供了一种基板处理装置，半导体装置的制造方法以及确认液体流量控制装置的操作的方法。 基板处理装置包括：容纳基板的处理室; 液体源供应系统，将液体源供应到处理室中; 溶剂供应系统，将具有大于液体源的蒸气压的溶剂供应到处理室中; 控制液体源和溶剂的流量的液体流量控制装置; 以及控制液体源供给系统，溶剂供应系统和液体流量控制装置的控制器，使得溶剂供应到液体流量控制装置中而不是溶剂供应系统，以确认液体流量控制装置在 液体源供应系统将液体源供应到处理室中。

公开(公告)号：US20110189865A1

公开(公告)日：2011-08-04

申请号：US13019647

申请日：2011-02-02

申请人： Masanori Sakai ,  Taro Fuchigami

发明人： Masanori Sakai ,  Taro Fuchigami

IPC分类号： H01R12/00

CPC分类号： H01R12/00

摘要： Connector jacks are surface-mounted on one surface of a substrate. A reinforcing member reinforces the connector jacks. On the reinforcing member, a first reinforcing part, which is in contact with the back of the surface of the substrate on which the connector jack is mounted, and second reinforcing parts, which elastically urge the top surface of the connector jacks, are formed.

摘要翻译： 连接器插座表面安装在基板的一个表面上。 加强构件加强连接器插座。 在加强构件上形成有与安装有连接器插座的基板的表面的背面接触的第一加强部和弹性地推压连接器插座的顶面的第二加强部。

公开(公告)号：US07742279B2

公开(公告)日：2010-06-22

申请号：US12022208

申请日：2008-01-30

申请人： Hirofumi Takahashi ,  Kyoko Honbo ,  Masanori Sakai

发明人： Hirofumi Takahashi ,  Kyoko Honbo ,  Masanori Sakai

IPC分类号： H01G9/00

CPC分类号： H01M4/13 ,  H01G9/058 ,  H01G9/155 ,  H01M4/14 ,  H01M4/242 ,  H01M4/32 ,  H01M4/366 ,  H01M4/62 ,  H01M10/052 ,  H01M10/06 ,  H01M10/345

摘要： A secondary battery comprises a single-plate lead acid battery (Va), a positive electrode capacitor layer and a negative electrode capacitor layer, which are formed on the respective surfaces of a positive electrode plate, and a negative electrode plate. Each of the positive electrode plate and negative electrode plate contains an active material, to have a configuration in which activated carbon has a concentration gradient. The electronic resistance between a collector terminal and the center of a portion where activated carbon is present at a high concentration is lower than the electronic resistance between the collector terminal and the center of a portion where activated carbon is present at a low concentration. In the single-plate lead acid battery, charges are accumulated in the positive electrode capacitor layer and in the negative electrode capacitor layer.

摘要翻译： 二次电池包括形成在正极板和负极板的各个表面上的单板铅酸蓄电池（Va），正电极电容器层和负极电容器层。 正极板和负极板均含有活性物质，具有活性炭具有浓度梯度的结构。 集电极端子与活性炭以高浓度存在的部分的中心之间的电子电阻低于集电极端子与活性炭以低浓度存在的部分的中心之间的电子电阻。 在单板铅酸电池中，在正极电容器层和负极电容器层中蓄积电荷。

公开(公告)号：US20100009079A1

公开(公告)日：2010-01-14

申请号：US12457779

申请日：2009-06-22

申请人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US20090197424A1

公开(公告)日：2009-08-06

申请号：US12320577

申请日：2009-01-29

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： H01L21/30 ,  C23C16/54

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。