公开(公告)号：US20080225577A1

公开(公告)日：2008-09-18

申请号：US12043617

申请日：2008-03-06

申请人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Toshihiko Nagase

发明人： Keiji HOSOTANI ,  Yoshiaki Asao ,  Toshihiko Nagase

IPC分类号： G11C11/02 ,  H01L29/82 ,  H01L21/00 ,  G11C7/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/1675 ,  H01L27/22 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic random access memory includes a bit line running in a first direction, a first word line running in a second direction different from the first direction, and a memory element having a magnetoresistive effect element including a fixed layer having a fixed magnetization direction, a recording layer having a reversible magnetization direction, and a nonmagnetic layer formed between the fixed layer and the recording layer, the magnetization directions in the fixed layer and the recording layer being perpendicular to a film surface, and a heater layer in contact with the magnetoresistive effect element, the memory element being connected to the bit line, and formed to oppose a side surface of the first word line such that the memory element is insulated from the first word line.

摘要翻译： 磁性随机存取存储器包括沿第一方向运行的位线，沿与第一方向不同的第二方向运行的第一字线，以及具有包括具有固定磁化方向的固定层的磁阻效应元件的存储元件， 具有可逆磁化方向的记录层和形成在固定层和记录层之间的非磁性层，固定层和记录层中的磁化方向垂直于膜表面，以及与磁阻效应接触的加热器层 所述存储元件连接到所述位线，并形成为与所述第一字线的侧表面相对，使得所述存储元件与所述第一字线绝缘。

公开(公告)号：US20080151608A1

公开(公告)日：2008-06-26

申请号：US11959897

申请日：2007-12-19

申请人： Keiji HOSOTANI ,  Yoshiaki Asao

发明人： Keiji HOSOTANI ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C2213/75 ,  Y10S977/935

摘要： A semiconductor memory device includes first to fourth resistance change elements sequentially arranged apart from each other in a first direction, a first electrode which connects one terminals of the first and second resistance change elements, a second electrode which connects one terminals of the third and fourth resistance change elements, a bit line which connects the other terminals of the second and third resistance change elements, first to fourth word lines respectively paired with the first to fourth resistance change elements, arranged apart from the first and second electrodes, and running in a second direction, a first current source which supplies a first electric current to a chain structure, when writing data in a selected element, and a second current source which supplies a second electric current to a selected word line which corresponds to the selected element, when writing the data in the selected element.

摘要翻译： 一种半导体存储器件，包括：沿第一方向相互顺序排列的第一至第四电阻变化元件;连接第一和第二电阻变化元件的一个端子的第一电极;连接第三和第四电极的一个端子的第二电极; 电阻变化元件，连接第二和第三电阻变化元件的其他端子的位线，与第一和第四电阻变化元件分别配对的第一至第四字线与第一和第二电极分开配置，并且以 第二方向，当将数据写入所选择的元件时，将第一电流提供给链结构的第一电流源和向对应于所选择的元件的所选择的字线提供第二电流的第二电流源， 在所选元素中写入数据。

公开(公告)号：US07376003B2

公开(公告)日：2008-05-20

申请号：US10465616

申请日：2003-06-20

申请人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

发明人： Yoshihisa Iwata ,  Yoshiaki Asao ,  Kentaro Nakajima

IPC分类号： G11C11/00

CPC分类号： G11C11/16

摘要： A magnetic field H1 in the hard-axis direction and a magnetic field H2 in the easy-axis direction are caused to simultaneously act on a MTJ element having an ideal asteroid curve, thereby reversing the magnetizing direction of the storing layer of the MTJ element. When the actual asteroid curve shifts in the hard-axis direction by Ho, a corrected synthesized magnetic field ({right arrow over (H1)}+{right arrow over (H2)}+{right arrow over (Ho)}) is generated in write operation to reliably reverse the magnetizing direction. The corrected synthesized magnetic field can easily be generated by individually controlling a write word/bit line current on the basis of programmed setting data.

摘要翻译： 使硬轴方向的磁场H 1和易轴方向的磁场H 2同时作用于具有理想的小行星曲线的MTJ元件，从而使MTJ的存储层的磁化方向反转 元件。 当实际的小行星曲线在硬轴方向上移动Ho时，产生校正的合成磁场（{H 1}} + {右箭头（H 2）} +（向右箭头（Ho））上的右箭头 在写入操作中可靠地反转磁化方向，通过基于编程的设置数据单独地控制写入字/位线电流，可以容易地产生校正的合成磁场。

公开(公告)号：US20070187801A1

公开(公告)日：2007-08-16

申请号：US11397726

申请日：2006-04-05

申请人： Yoshiaki Asao ,  Akihiro Nitayama

发明人： Yoshiaki Asao ,  Akihiro Nitayama

IPC分类号： H01L29/12 ,  H01L31/117

CPC分类号： H01L45/144 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1286

摘要： A semiconductor device comprising a semiconductor substrate, a switching element which is provided on the semiconductor substrate, a first interconnect layer which is provided above the semiconductor substrate, a plurality of phase-change memory devices which have phase-change material whose resistance changes by a phase-change due to a temperature change, being stacked, and being connected in series to the first interconnect layer and the switching element, a plurality of first heating elements which are connected in series to the respective phase-change memory devices, and a plurality of second heating elements which are connected to second interconnect layers different from the first interconnect layer, and which are provided so as to correspond to the respective phase-change memory devices.

摘要翻译： 一种半导体器件，包括半导体衬底，设置在所述半导体衬底上的开关元件，设置在所述半导体衬底上方的第一互连层，具有相变材料的多个相变存储器件，所述相变材料的电阻改变为 由于温度变化引起的相变，被堆叠并串联连接到第一互连层和开关元件，多个第一加热元件串联连接到各个相变存储器件，以及多个 第二加热元件连接到与第一互连层不同的第二互连层，并且被设置为对应于各个相变存储器件。

公开(公告)号：US06879515B2

公开(公告)日：2005-04-12

申请号：US10926047

申请日：2004-08-26

申请人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

发明人： Hiroaki Yoda ,  Yoshiaki Asao ,  Tomomasa Ueda ,  Minoru Amano ,  Tatsuya Kishi ,  Keiji Hosotani ,  Junichi Miyamoto

IPC分类号： G11C11/15 ,  G11C11/00 ,  G11C11/16 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/00 ,  H01L27/105 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08

摘要： A magnetic memory device includes first wiring which runs in the first direction, second wiring which runs in the second direction, a magneto-resistance element which is arranged at an intersection between the first and second wirings, a first yoke main body which covers at least either of the lower surface and two side surfaces of the first wring, a second yoke main body which covers at least either of the upper surface and two side surfaces of the second wiring, first and second yoke tips which are arranged on two sides of the magneto-resistance element in the first direction at an interval from the magneto-resistance element, and third and fourth yoke tips which are arranged on two sides of the magneto-resistance element in the second direction at an interval from the magneto-resistance element.

摘要翻译： 磁存储装置包括沿第一方向延伸的第一布线，沿第二方向延伸的第二布线，布置在第一布线和第二布线之间的交叉点处的磁阻元件，至少覆盖第一布线 第一绕线的下表面和两个侧表面中的任一个，覆盖第二布线的上表面和两个侧表面中的至少一个的第二轭主体，布置在第二布线的两侧上的第一和第二轭尖 磁阻元件以与磁阻元件间隔的方式在第一方向上，以及第三和第四磁轭尖端，其在与磁阻元件间隔开的第二方向上布置在磁阻元件的两侧。

公开(公告)号：US06844204B2

公开(公告)日：2005-01-18

申请号：US10796061

申请日：2004-03-10

申请人： Yoshiaki Asao

发明人： Yoshiaki Asao

IPC分类号： G11C11/15 ,  G11C11/00 ,  H01L21/00 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L29/76 ,  H01L29/78 ,  H01L31/062 ,  H01L31/119 ,  H01L43/08

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/224 ,  H01L27/228

摘要： A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.

摘要翻译： 数据选择线（写入线）被放置在MTJ元件上。 数据选择线的上表面和侧表面涂覆有磁导率高的磁轭材料。 磁轭材料通过阻挡层彼此分离。 类似地，写字线被布置在MTJ元件的正下方。 写字线的下表面和侧表面也涂有具有高磁导率的磁轭材料。 写字线的下表面和侧表面上的轭材料也通过阻挡层彼此分离。

公开(公告)号：US06717845B2

公开(公告)日：2004-04-06

申请号：US10345253

申请日：2003-01-16

申请人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Katsuya Nishiyama ,  Shigeki Takahashi ,  Minoru Amano ,  Tomomasa Ueda ,  Hiroaki Yoda ,  Yoshiaki Asao ,  Yoshihisa Iwata ,  Tatsuya Kishi

IPC分类号： G11C1115

CPC分类号： G11C11/16

摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.

摘要翻译： 磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

公开(公告)号：US5032528A

公开(公告)日：1991-07-16

申请号：US538764

申请日：1990-06-15

申请人： Yoshiaki Asao ,  Shizuo Sawada

发明人： Yoshiaki Asao ,  Shizuo Sawada

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/768

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/02299 ,  H01L21/31662 ,  H01L21/76802

摘要： Regions having different impurity concentrations are formed in the main surface region of the semiconductor substrate. Accordingly, when the substrate is oxidized, oxide films having different thickness are formed. More specifically, the oxide film is formed more deeply on the surface region of the substrate having a high impurity concentration in which ions are injected than on the surface region in which no ions are injected. In the etching step, since the thinner oxide film is removed while the thicker oxide film remains, the surface of the region under the thinner oxide film is exposed, and thus a contact hole is formed. If, in the step of forming a contact hole, a portion of the thinner oxide film is covered by a resist pattern, only the regiion of the oxide film which is not masked by the resist pattern is etched and the substrate surface thereunder is exposed, and thus a contact hole is formed.

公开(公告)号：US09035402B2

公开(公告)日：2015-05-19

申请号：US13963710

申请日：2013-08-09

申请人： Yoshiaki Asao ,  Hideaki Harakawa

发明人： Yoshiaki Asao ,  Hideaki Harakawa

IPC分类号： H01L43/08 ,  H01L27/22 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/165 ,  G11C11/1675 ,  H01L43/08

摘要： According to one embodiment, a semiconductor memory device comprises a cell transistor includes a first gate electrode buried in a semiconductor substrate and a first diffusion layer and a second diffusion layer formed to sandwich the first gate electrode, a first lower electrode formed on the first diffusion layer, a magnetoresistive element formed on the first lower electrode to store data according to a change in a magnetization state and connected to a bit line located above, a second lower electrode formed on the second diffusion layer, and a first contact formed on the second lower electrode and connected to a source line located above. A contact area between the second lower electrode and the second diffusion layer is larger than a contact area between the first contact and the second lower electrode.

摘要翻译： 根据一个实施例，一种半导体存储器件包括：单元晶体管，包括埋在半导体衬底中的第一栅电极和形成为夹着第一栅电极的第一扩散层和第二扩散层;形成在第一扩散层上的第一下电极 层，形成在所述第一下电极上以根据磁化状态的变化存储数据并连接到位于上方的位线的磁阻元件，形成在所述第二扩散层上的第二下电极，以及形成在所述第二扩散层上的第一触点 下电极并连接到位于上方的源极线。 第二下部电极和第二扩散层之间的接触面积大于第一接触部和第二下部电极的接触面积。

公开(公告)号：US08724377B2

公开(公告)日：2014-05-13

申请号：US13423700

申请日：2012-03-19

申请人： Takaya Yamanaka ,  Susumu Shuto ,  Yoshiaki Asao

发明人： Takaya Yamanaka ,  Susumu Shuto ,  Yoshiaki Asao

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/228 ,  H01L43/12

摘要： According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.

摘要翻译： 根据一个实施例，存储器件包括：第一信号线; 第二信号线; 晶体管 第一存储区; 和第二存储器区域。 晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。 第一存储区具有第一磁隧道结元件。 当电流沿一个方向流动时，其磁化方向变得平行，并且当另一个方向上的电流时，磁化方向变得反平行。 第二存储器区域具有第二磁性隧道结元件。 当电流沿一个方向流动时，其磁化方向变得平行，并且当电流在另一个第一方向上流动时，其磁化方向变得反平行。