公开(公告)号：US08168497B2

公开(公告)日：2012-05-01

申请号：US12791259

申请日：2010-06-01

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L21/8238

CPC分类号： G06F17/5068 ,  H01L29/41758

摘要： A solution for designing a semiconductor device, in which two or more attributes of a pair of electrodes are determined to, for example, minimize resistance between the electrodes, is provided. Each electrode can include a current feeding contact from which multiple fingers extend, which are interdigitated with the fingers of the other electrode in an alternating pattern. The attributes can include a target depth of each finger, a target effective width of each pair of adjacent fingers, and one or more target attributes of the current feeding contacts. Subsequently, the device and/or a circuit including the device can be fabricated.

摘要翻译： 提供了一种用于设计半导体器件的方案，其中确定一对电极的两个或多个属性以例如使电极之间的电阻最小化。 每个电极可以包括多个指状件延伸的电流馈送触点，其以交替模式与另一个电极的指状物交叉指向。 属性可以包括每个手指的目标深度，每对相邻手指的目标有效宽度以及当前馈送触点的一个或多个目标属性。 随后，可以制造包括该器件的器件和/或电路。

公开(公告)号：US20110266520A1

公开(公告)日：2011-11-03

申请号：US13162895

申请日：2011-06-17

申请人： Michael Shur ,  Remigijus Gaska ,  Jinwei Wang

发明人： Michael Shur ,  Remigijus Gaska ,  Jinwei Wang

IPC分类号： H01L33/04

CPC分类号： H01L33/06 ,  H01L21/02387 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/15 ,  H01L33/10 ,  H01L33/32

摘要： A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

摘要翻译： 提供包括多个周期的超晶格层，每个周期由多个子层形成。 每个子层包括与相邻子层不同的组成，并且包括与相邻子层的极化相反的极化。 以这种方式，各相邻子层的极化相互补偿。 此外，超晶格层可被配置为对诸如紫外线辐射的辐射至少部分透明。

公开(公告)号：US20100301922A1

公开(公告)日：2010-12-02

申请号：US12791272

申请日：2010-06-01

申请人： Grigory Simin ,  Alexei Koudymov ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Alexei Koudymov ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H03K17/687 ,  H01L29/78 ,  G06F17/50

CPC分类号： H01L29/7787 ,  H01L27/0617 ,  H01L27/088 ,  H01L29/2003 ,  H01L29/42316

摘要： A field effect transistor (FET) including a monolithically integrated gate control circuit element can be included in, for example, a radio frequency switch circuit. For example, the FET can be included as a series and/or shunt FET of a radio frequency coplanar waveguide circuit. The widths of the series and shunt FETs of a switch circuit can be selected to provide a target isolation and/or a target insertion loss for a target operating frequency.

摘要翻译： 包括单片集成栅极控制电路元件的场效应晶体管（FET）可以包括在例如射频开关电路中。 例如，FET可以被包括为射频共面波导电路的串联和/或并联FET。 可以选择开关电路的串联和并联FET的宽度，以为目标工作频率提供目标隔离和/或目标插入损耗。

公开(公告)号：US20100301490A1

公开(公告)日：2010-12-02

申请号：US12791288

申请日：2010-06-01

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L23/535 ,  G06F17/50 ,  H01L21/768 ,  H01L21/67

CPC分类号： H01L29/42312 ,  H01L29/41708 ,  H01L29/41716 ,  H01L29/41725 ,  H01L29/42304 ,  H01L29/42308

摘要： A profiled contact for a device, such as a high power semiconductor device is provided. The contact is profiled in both a direction substantially parallel to a surface of a semiconductor structure of the device and a direction substantially perpendicular to the surface of the semiconductor structure. The profiling can limit the peak electric field between two electrodes to approximately the same as the average electrical field between the electrodes, as well as limit the electric field perpendicular to the semiconductor structure both within and outside the semiconductor structure.

摘要翻译： 提供了诸如大功率半导体器件的器件的成型接触件。 接触件在基本上平行于器件的半导体结构的表面的方向和基本上垂直于半导体结构的表面的方向上成型。 轮廓可以将两个电极之间的峰值电场限制为与电极之间的平均电场大致相同，并且在半导体结构内部和外部限制垂直于半导体结构的电场。

公开(公告)号：US07655962B2

公开(公告)日：2010-02-02

申请号：US11781338

申请日：2007-07-23

申请人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/778

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/402

摘要： Aspects of the present invention provide an enhancement mode (E-mode) insulated gate (IG) double heterostructure field-effect transistor (DHFET) having low power consumption at zero gate bias, low gate currents, and/or high reliability. An E-mode HFET in accordance with an embodiment of the invention includes: top and bottom barrier layers; and a channel layer sandwiched between the bottom and the top barrier layers, wherein the bottom and top barrier layers have a larger bandgap than the channel layer, and wherein polarization charges of the bottom barrier layer deplete the channel layer and polarization charges of the top barrier layer induce carriers in the channel layer; and wherein a total polarization charge in the bottom barrier layer is larger than a total polarization charge in the top barrier layer such that the channel layer is substantially depleted at zero gate bias.

摘要翻译： 本发明的方面提供了一种在零栅极偏压，低栅极电流和/或高可靠性下具有低功耗的增强模式（E模式）绝缘栅（IG）双异质结构场效应晶体管（DHFET）。 根据本发明的实施例的E型HFET包括：顶部和底部阻挡层; 以及夹在底部和顶部阻挡层之间的沟道层，其中底部和顶部势垒层具有比沟道层更大的带隙，并且其中底部势垒层的极化电荷消耗沟道层和顶部势垒的极化电荷 层在沟道层中诱导载流子; 并且其中底部阻挡层中的总极化电荷大于顶部势垒层中的总极化电荷，使得沟道层在零栅极偏压下基本上耗尽。

公开(公告)号：US07554123B2

公开(公告)日：2009-06-30

申请号：US11208679

申请日：2005-08-22

申请人： Remigijus Gaska ,  Jianping Zhang ,  Michael Shur

发明人： Remigijus Gaska ,  Jianping Zhang ,  Michael Shur

IPC分类号： H01L29/26 ,  H01L33/00

CPC分类号： H01L21/28575 ,  H01L29/2003 ,  H01L29/452

摘要： An improved ohmic contact for a nitride-based semiconductor device is provided. In particular, a semiconductor device and method of manufacturing the semiconductor device are provided in which a semiconductor structure has an ohmic contact that includes a contact layer and a metal layer thereon. The contact layer includes at least Aluminum (Al) and Indium (In), and can further include Gallium (Ga) and/or Nitrogen (N). The molar fraction of Al and/or In can be increased/decreased within the contact layer.

摘要翻译： 提供了一种用于氮化物基半导体器件的改进的欧姆接触。 特别地，提供一种制造半导体器件的半导体器件和方法，其中半导体结构具有在其上包括接触层和金属层的欧姆接触。 接触层至少包括铝（Al）和铟（In），并且还可以包括镓（Ga）和/或氮（N）。 Al和/或In的摩尔分数可以在接触层内增加/减少。

公开(公告)号：US07321109B2

公开(公告)日：2008-01-22

申请号：US11746172

申请日：2007-05-09

申请人： Michael Shur ,  Remigijus Gaska

发明人： Michael Shur ,  Remigijus Gaska

IPC分类号： G01J1/32

CPC分类号： G01N21/255 ,  G01J1/32 ,  H05B37/0227

摘要： Method and system for generating electromagnetic radiation wherein one or more attributes of the electromagnetic radiation are adjusted based on a characteristic of the object being illuminated. The object characteristic can be obtained based on a sensed property of the object and used to adjust the attribute(s) of the electromagnetic radiation accordingly.

摘要翻译： 用于产生电磁辐射的方法和系统，其中电磁辐射的一个或多个属性基于被照射物体的特性被调整。 可以基于物体的感测特性获得对象特征，并且用于相应地调整电磁辐射的属性。

公开(公告)号：US07235766B2

公开(公告)日：2007-06-26

申请号：US10830696

申请日：2004-04-23

申请人： Michael Shur ,  Remigijus Gaska

发明人： Michael Shur ,  Remigijus Gaska

IPC分类号： G01J1/32

CPC分类号： G01N21/255 ,  G01J1/32 ,  H05B37/0227

摘要： Method and system for generating electromagnetic radiation wherein one or more attributes of the electromagnetic radiation are adjusted based on a characteristic of the object being illuminated. The object characteristic can be obtained based on a sensed property of the object and used to adjust the attribute(s) of the electromagnetic radiation accordingly.

摘要翻译： 用于产生电磁辐射的方法和系统，其中电磁辐射的一个或多个属性基于被照射物体的特性被调整。 可以基于物体的感测特性获得对象特征，并且用于相应地调整电磁辐射的属性。

公开(公告)号：US20070141258A1

公开(公告)日：2007-06-21

申请号：US11671784

申请日：2007-02-06

申请人： Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

发明人： Qhalid Fareed ,  Remigijus Gaska ,  Michael Shur

IPC分类号： C23C16/00 ,  C08J7/18

CPC分类号： C23C16/45523 ,  C23C16/303 ,  C30B25/02 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639

摘要： Nitride-based film is grown using multiple precursor fluxes. Each precursor flux is pulsed one or more times to add a desired element to the nitride-based film at a desired time. The quantity, duration, timing, and/or shape of the pulses is customized for each element to assist in generating a high quality nitride-based film.

摘要翻译： 使用多种前体助熔剂生长氮化物基膜。 每个前体通量被脉冲一次或多次，以在期望的时间向氮化物基膜添加所需的元素。 针对每个元件定制脉冲的数量，持续时间，定时和/或形状，以帮助产生高质量的基于氮化物的膜。

公开(公告)号：US20060081889A1

公开(公告)日：2006-04-20

申请号：US11111541

申请日：2005-04-21

申请人： Michael Shur ,  Remigijus Gaska

发明人： Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/768

CPC分类号： G02B6/10 ,  H01L27/14649

摘要： A device and method for managing terahertz and/or microwave radiation are provided. The device can comprise one or more field effect transistors (FETs) that each include at least one channel contact to a central region of the device channel of the FET. The frequency of the radiation managed by the device can be tuned/adjusted by applying a bias voltage to the FET. The radiation can be impinged on the device, and can be detected by measuring a voltage that is induced by the radiation. Further, the device can generate terahertz and/or microwave radiation by, for example, inducing a voltage between two edge contacts on either side of the device channel and applying the voltage to the channel contact.