Wafer alignment sensor
    41.
    发明授权
    Wafer alignment sensor 失效
    晶圆对准传感器

    公开(公告)号:US5576831A

    公开(公告)日:1996-11-19

    申请号:US263203

    申请日:1994-06-20

    摘要: A surface height detection and positioning device for use in a surface inspection system. An incident beam of light impinges obliquely upon the surface, and a position detector is disposed to receive light reflected from the surface. The position detector has a sensitivity characteristic graded along a direction transverse to the surface, so that the output of the position detector is used to determine a height of the surface. The device can be incorporated into a particle detection system that scans patterned wafers with obliquely incident light to search for particles with a particle detector positioned to receive scattered light. In one embodiment, the position detector can have a width that is graded along the direction transverse to the surface, so that a scan line on the surface that is focused upon the position detector crosses the width of that detector in a time that varies as a function of the height of the surface. This time can be measured as an electrical pulse from the position detector that can be used for various purposes, including adjusting the height of the surface during scanning. In another embodiment, the position detector can have a periodic variance in light sensitivity that is graded, so that varying a height of the surface varies a phase of the output from the position detector.

    摘要翻译: 一种用于表面检测系统的表面高度检测和定位装置。 入射光束倾斜地撞击在表面上,并且设置位置检测器以接收从表面反射的光。 位置检测器具有沿横向于表面的方向分级的灵敏度特性,使得位置检测器的输出用于确定表面的高度。 该装置可以结合到使用倾斜入射光扫描图案化晶片的颗粒检测系统中,以用用于接收散射光的颗粒检测器搜索颗粒。 在一个实施例中,位置检测器可以具有沿着横向于表面的方向分级的宽度,使得聚焦在位置检测器上的表面上的扫描线在随时间变化的时间内穿过该检测器的宽度 表面高度的功能。 这个时间可以被测量为来自位置检测器的电脉冲,其可以用于各种目的,包括在扫描期间调整表面的高度。 在另一个实施例中,位置检测器可以具有渐变的光敏度的周期性变化,使得改变表面的高度改变来自位置检测器的输出的相位。

    Parametric profiling using optical spectroscopic systems
    43.
    发明授权
    Parametric profiling using optical spectroscopic systems 有权
    使用光谱系统进行参数分析

    公开(公告)号:US07826071B2

    公开(公告)日:2010-11-02

    申请号:US11868740

    申请日:2007-10-08

    IPC分类号: G01B11/14

    摘要: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

    摘要翻译: 构建种子轮廓的画廊,并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点,由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较,以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs,Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数,以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺,以便补偿轮廓参数中的任何误差。

    Overlay error detection
    44.
    发明授权
    Overlay error detection 有权
    叠加错误检测

    公开(公告)号:US07375810B2

    公开(公告)日:2008-05-20

    申请号:US11313139

    申请日:2005-12-19

    IPC分类号: G01B11/00 G06K9/00

    CPC分类号: G03F7/70633 G01B11/272

    摘要: An overlay target with gratings thereon is illuminated and radiation scattered by the target is imaged onto detectors. A phase difference is then detected between the outputs of the detectors to find the mis-alignment error. In another aspect, an overlay target with gratings or box-in-box structures is illuminated and radiation scattered by the target is imaged onto detectors located away from the specular reflection direction of the illumination in a dark field detection scheme. Medium numerical aperture optics may be employed for collecting the radiation from the overlay target in a bright or dark field configuration so that the system has a larger depth of focus and so that the two structures of the target at different elevations can be measured accurately at the same time. Analytical functions are constructed for the grating type targets. By finding the phase difference between the two gratings at different elevations, misalignment errors can be detected. Analytical functions are constructed as a model for box-in-box type targets where data points away from the edges of the box or bars can be used in the curve fitting. Symmetrical functions are employed to further reduce noise.

    摘要翻译: 其上具有光栅的覆盖目标被照射,并且由目标散射的辐射被成像到检测器上。 然后在检测器的输出之间检测到相位差,以发现错误对准误差。 在另一方面,照射具有光栅或盒内盒结构的覆盖目标,并且由暗场散射的辐射在暗场检测方案中成像到远离照明的镜面反射方向的探测器上。 可以采用中等数值孔径光学器件来收集来自覆盖目标的明亮或暗场配置的辐射,使得系统具有更大的聚焦深度,并且可以在不同高度处的靶的两个结构被精确地测量 同时。 为光栅类型目标构建分析功能。 通过在不同高度上找到两个光栅之间的相位差,可以检测到不对准误差。 分析功能被构造为盒装箱型目标的模型,其中数据指向远离箱体或杆的边缘可以在曲线拟合中使用。 采用对称功能进一步降低噪音。

    Optical system for measuring samples using short wavelength radiation
    45.
    发明授权
    Optical system for measuring samples using short wavelength radiation 有权
    用于使用短波长辐射测量样品的光学系统

    公开(公告)号:US07369233B2

    公开(公告)日:2008-05-06

    申请号:US10718126

    申请日:2003-11-19

    IPC分类号: G01N21/17

    CPC分类号: G01N21/9501 G01N21/8806

    摘要: In an optical system measuring sample characteristics, by reducing the amount of ambient absorbing gas or gases and moisture present in at least a portion of the illumination and detection paths experienced by vacuum ultraviolet (VUV) radiation used in the measurement process, the attenuation of such wavelength components can be reduced. Such reduction can be accomplished by a process without requiring the evacuation of all gases and moisture from the measurement system. In one embodiment, the reduction can be accomplished by displacing at least some of the absorbing gas(es) and moisture present in at least a portion of the measuring paths so as to reduce the attenuation of VUV radiation. In this manner, the sample does not need to be placed in a vacuum, thereby enhancing system throughput.

    摘要翻译: 在测量样品特性的光学系统中,通过减少在测量过程中使用的真空紫外线(VUV)辐射所经历的照明和检测路径的至少一部分中存在的环境吸收气体或气体和水分的量, 可以减少波长分量。 这种还原可以通过一种方法来实现,而不需要从测量系统排出所有的气体和水分。 在一个实施例中,可以通过置换至少部分测量路径中的至少一些吸收气体和水分来实现还原,以便减少VUV辐射的衰减。 以这种方式,样品不需要放置在真空中,从而提高系统产量。

    System for Measuring Periodic Structures

    公开(公告)号:US20060290931A1

    公开(公告)日:2006-12-28

    申请号:US11458934

    申请日:2006-07-20

    IPC分类号: G01J4/00

    摘要: A periodic structure is illuminated by polychromatic electromagnetic radiation. Radiation from the structure is collected and divided into two rays having different polarization states. The two rays are detected from which one or more parameters of the periodic structure may be derived. In another embodiment, when the periodic structure is illuminated by a polychromatic electromagnetic radiation, the collected radiation from the structure is passed through a polarization element having a polarization plane. The element and the polychromatic beam are controlled so that the polarization plane of the element are at two or more different orientations with respect to the plane of incidence of the polychromatic beam. Radiation that has passed through the element is detected when the plane of polarization is at the two or more positions so that one or more parameters of the periodic structure may be derived from the detected signals. At least one of the orientations of the plane of polarization is substantially stationary when the detection takes place. To have as small a footprint as possible, one employs an optical device that includes a first element directing a polychromatic beam of electromagnetic radiation to the structure and a second optical element collecting radiation from the structure where the two elements form an integral unit or are attached together to form an integrated unit. To reduce the footprint, the measurement instrument and the wafer are both moved. In one embodiment, both the apparatus and the wafer undergo translational motion transverse to each other. In a different arrangement, one of the two motions is translational and the other is rotational. Any one of the above-described embodiments may be included in an integrated processing and detection apparatus which also includes a processing system processing the sample, where the processing system is responsive to the output of any one of the above embodiments for adjusting a processing parameter.

    Optical Scanning System for Surface Inspection
    48.
    发明申请
    Optical Scanning System for Surface Inspection 审中-公开
    表面检测光学扫描系统

    公开(公告)号:US20060203235A1

    公开(公告)日:2006-09-14

    申请号:US11421933

    申请日:2006-06-02

    IPC分类号: G01N21/88

    摘要: In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.

    摘要翻译: 在用于检测样品表面上的颗粒和图案缺陷的光学扫描系统中,光束被聚焦到表面上的照明光斑上,并且沿着扫描线扫描光斑。 检测器邻近表面定位以收集来自检测器包括传感器的一维或二维阵列的点的散射光。 沿着扫描线的多个位置中的每一个处从照明点散射的光被聚焦到阵列中的对应的传感器上。 相对于照明光束对称放置的多个检测器检测来自光斑的横向和前向散射光。 在比表面尺寸短的扫描线段的阵列上扫描该点。 亮场通道可以调整样品表面的高度,以校正由表面的高度变化引起的误差。 可以比较由检测器输出提供的不同缺陷图,以识别和分类缺陷。 传感器阵列的成像功能结合了扫描系统和成像系统的优点,同时提高了系统的信号/背景比。

    Methods and systems for determining a presence of defects and a thin film characteristic of a specimen
    49.
    发明授权
    Methods and systems for determining a presence of defects and a thin film characteristic of a specimen 有权
    用于确定缺陷的存在和样品的薄膜特性的方法和系统

    公开(公告)号:US07106425B1

    公开(公告)日:2006-09-12

    申请号:US09956845

    申请日:2001-09-20

    IPC分类号: G01N21/88

    摘要: Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, a presence of defects on the specimen and a thin film characteristic of the specimen. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

    摘要翻译: 提供了用于监测半导体制造工艺的方法和系统。 系统可以包括被配置为支撑样本并耦合到测量装置的台。 测量装置可以包括照明系统和检测系统。 照明系统和检测系统可以被配置为使得系统可以被配置为确定样本的多个属性。 例如,系统可以被配置为确定样本的多个属性,包括但不限于在样本上存在缺陷和样本的薄膜特性。 以这种方式,测量装置可以执行多个光学和/或非光学测量和/或检查技术。