公开(公告)号：US20230120654A1

公开(公告)日：2023-04-20

申请号：US18084135

申请日：2022-12-19

Applicant: Micron Technology, Inc.

Inventor： Timothy M. Hollis ,  James S. Rehmeyer ,  Baekkyu Choi ,  Yogesh Sharma ,  Eric J. Stave ,  Brian W. Huber ,  Miles S. Wiscombe

IPC: G11C11/406

Abstract: Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

公开(公告)号：US20230084286A1

公开(公告)日：2023-03-16

申请号：US17991489

申请日：2022-11-21

Applicant: Micron Technology, Inc.

Inventor： Eric J. Stave ,  George E. Pax ,  Yogesh Sharma ,  Gregory A. King ,  Chan H. Yoo ,  Randon K. Richards ,  Timothy M. Hollis

IPC: G11C7/22 ,  G11C16/10 ,  G11C7/10

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

公开(公告)号：US11568913B2

公开(公告)日：2023-01-31

申请号：US17164738

申请日：2021-02-01

Applicant: Micron Technology, Inc.

Inventor： Timothy M. Hollis ,  James S. Rehmeyer ,  Baekkyu Choi ,  Yogesh Sharma ,  Eric J. Stave ,  Brian W. Huber ,  Miles S. Wiscombe

IPC: G11C11/406

Abstract: Methods, systems, and devices for voltage adjustment based on, for example, pending refresh operations are described. A memory device may periodically perform refresh operations to refresh volatile memory cells and may at times postpone performing one or more refresh operations. A memory device may determine a quantity of pending (e.g., postponed) refresh operations, such as by determining a quantity of refresh intervals that have elapsed without receiving or executing a refresh command, among other methods. A memory device may pre-emptively adjust (or cause to be adjusted) a supply voltage associated with the memory device or memory device component based on the quantity of pending refresh operations to prepare for the current demand associated with the performing the one or more pending refresh operations. For example, the memory device may increase a supply voltage associated with one or more components to prepare for performing multiple pending refresh operations.

公开(公告)号：US11508422B2

公开(公告)日：2022-11-22

申请号：US16530739

申请日：2019-08-02

Applicant: Micron Technology, Inc.

Inventor： Eric J. Stave ,  George E. Pax ,  Yogesh Sharma ,  Gregory A. King ,  Chan H. Yoo ,  Randon K. Richards ,  Timothy M. Hollis

IPC: G11C7/22 ,  G11C16/10 ,  G11C7/10

Abstract: Systems, apparatuses, and methods for operating a memory device or devices are described. A memory device or module may introduce latency in commands to coordinate operations at the device or to improve timing or power consumption at the device. For example, a host may issue a command to a memory module, and a component or feature of the memory module may receive the command and modify the command or the timing of its execution in manner that is invisible or non-disruptive to the host while facilitating operations at the memory module. In some examples, components or features of a memory module may be disabled to effect or introduce latency in operation without affecting timing or operation of a host device. A memory module may operate in different modes that allow for different latencies; the use or introduction of latencies may not affect other features or operability of the memory module.

公开(公告)号：US20220199193A1

公开(公告)日：2022-06-23

申请号：US17131383

申请日：2020-12-22

Applicant: Micron Technology, Inc.

Inventor： Eric J. Stave

IPC: G11C29/50

Abstract: Systems, apparatuses, and methods for test devices having parallel impedances to reduce measurement input impedance are disclosed. An apparatus includes a test input terminal, a measurement output terminal, a reference voltage potential node, and a parallel resistor. The test input terminal is configured to electrically connect to a signal output terminal of a signal generator. The test input terminal is configured to receive a test signal from the signal generator via the signal output terminal. The measurement output terminal electrically connects to a measurement input terminal of an electrical measurement instrument. The parallel resistor is electrically connected from the measurement output terminal to the reference voltage potential node. A system includes the apparatus and the electrical measurement instrument. A method includes providing a test signal to the test device, verifying the test signal using the electrical measurement instrument, and providing the test signal to a device under test.

公开(公告)号：US20220148638A1

公开(公告)日：2022-05-12

申请号：US17094731

申请日：2020-11-10

Applicant: Micron Technology, Inc.

Inventor： Gary L. Howe ,  Miles S. Wiscombe ,  James S. Rehmeyer ,  Eric J. Stave

IPC: G11C11/406 ,  G11C11/4074 ,  G11C11/4076

Abstract: Methods, apparatuses, and systems related to voltage management of memory apparatuses/systems are described. The memory device can include circuitry configured to determine an operating frequency of a clock signal for an ongoing or an upcoming memory operation. The memory device may generate a control indicator for increasing a system voltage for higher operating frequencies, for decreasing the system voltage for lower operating frequencies, or a combination thereof.

公开(公告)号：US20210383849A1

公开(公告)日：2021-12-09

申请号：US17244942

申请日：2021-04-29

Applicant: Micron Technology, Inc.

Inventor： Eric J. Stave ,  Dirgha Khatri ,  Elancheren Durai ,  Quincy R. Holton ,  Timothy M. Hollis ,  Matthew B. Leslie ,  Baekkyu Choi ,  Boe L. Holbrook ,  Yogesh Sharma ,  Scott R. Cyr

IPC: G11C8/18 ,  G11C8/12 ,  G11C8/06 ,  G11C7/10

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which clock trees can be separately optimized to provide a coarse alignment between a clock signal and a command/address signal (and/or a chip select signal or other control signal), and/or in which individual memory devices can be isolated for fine-tuning of device-specific alignment between a clock signal and a command/address signal (and/or a chip select signal or other control signal). Moreover, individual memory devices can be isolated for fine-tuning of device-specific equalization of a command/address signal (and/or a chip select signal or other control signal).

公开(公告)号：US11031070B1

公开(公告)日：2021-06-08

申请号：US16773672

申请日：2020-01-27

Applicant: Micron Technology, Inc.

Inventor： Todd M. Buerkle ,  Eric J. Stave

IPC: G11C7/10 ,  G11C11/4093 ,  G11C11/4076 ,  G11C11/408 ,  G06F9/54 ,  G06F9/30 ,  H04L25/03

Abstract: A method for equalizing command/address signals in a memory device includes receiving a status of a termination pin for a memory device and automatically performing equalization on signals received on a command/address bus channel of the memory device based on the status. An apparatus for equalizing command/address signals in a memory device includes an input buffer circuit configured to receive the signals from a command/address bus channel. The apparatus also includes a filter circuit configured to automatically perform equalization on the signals based on a status of a termination pin.

公开(公告)号：US20190156871A1

公开(公告)日：2019-05-23

申请号：US16047954

申请日：2018-07-27

Applicant: Micron Technology, Inc.

Inventor： Gary Howe ,  Eric J. Stave ,  Thomas H. Kinsley ,  Matthew A. Prather

IPC: G11C7/22 ,  G11C7/10 ,  G11C8/10 ,  G06F13/40

CPC classification number: G11C7/222 ,  G06F13/4086 ,  G11C7/1045 ,  G11C7/1057 ,  G11C7/1084 ,  G11C7/1096 ,  G11C8/10 ,  G11C2207/10

Abstract: Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during multiple communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication and instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The device may receive a second command instructing the first portion to perform a second communication, and the device may perform, with the first portion, the second communication while the second portion remains in the ODT mode. The second portion may persist in the ODT mode for an indicated number of communications, or until instructed to exit the ODT mode.

公开(公告)号：US20190155544A1

公开(公告)日：2019-05-23

申请号：US16015042

申请日：2018-06-21

Applicant: Micron Technology, Inc.

Inventor： Eric J. Stave ,  Thomas H. Kinsley ,  Matthew A. Prather

IPC: G06F3/06 ,  G11C7/10

Abstract: Methods, systems, and apparatuses related to memory operation with on-die termination (ODT) are provided. A memory device may be configured to provide ODT at a first portion (e.g., rank) during communications at a second portion (e.g., rank). For example, a memory device may receive a first command instructing a first portion to perform a first communication. The device may transmit, from the first portion, a signal instructing a second portion to enter an ODT mode. The device may perform, with the first portion, the first communication with a host while the second portion is in the ODT mode. The signal may be provided at an ODT I/O terminal of the first portion coupled to an ODT I/O terminal of the second portion.