Heat spreaders for use with semiconductor devices

    公开(公告)号:US10410950B1

    公开(公告)日:2019-09-10

    申请号:US15977760

    申请日:2018-05-11

    Inventor: George E. Pax

    Abstract: Memory devices having heat spreaders are disclosed herein. In one embodiment, a memory device includes first memories coupled to a front side of a substrate, second memories coupled to a back side of the substrate, and a flexible heat spreader. The flexible heat spreader can include graphite and is coupled to back side surfaces of the first and second memories to dissipate heat generated by the first and second memories.

    Semiconductor packages with pass-through clock traces and associated systems and methods

    公开(公告)号:US11488938B2

    公开(公告)日:2022-11-01

    申请号:US17219821

    申请日:2021-03-31

    Abstract: Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

    HEAT SPREADERS FOR SEMICONDUCTOR DEVICE MODULES

    公开(公告)号:US20210144840A1

    公开(公告)日:2021-05-13

    申请号:US16681350

    申请日:2019-11-12

    Inventor: George E. Pax

    Abstract: A heat spreader configured for use with a dual-in line memory module (DIMM) is provided. The heat spreader comprises a thermally conductive body having upper and lower edges with a first length, opposing side edges with a second length less than the first length, and a planar surface configured for attachment to a plurality of co-planar semiconductor devices of the DIMM, and a retaining clip configured to releasably attach the thermally conductive body to the DIMM when disposed within a side notch of the DIMM and around a first one of the opposing side edges of the thermally conductive body.

    Semiconductor packages with pass-through clock traces and associated systems and methods

    公开(公告)号:US10978426B2

    公开(公告)日:2021-04-13

    申请号:US16512591

    申请日:2019-07-16

    Abstract: Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

    MEMORY MODULES AND MEMORY PACKAGES INCLUDING GRAPHENE LAYERS FOR THERMAL MANAGEMENT

    公开(公告)号:US20210036125A1

    公开(公告)日:2021-02-04

    申请号:US16530757

    申请日:2019-08-02

    Abstract: Systems, apparatuses, and methods relating to memory devices and packaging are described. A device, such as a dual inline memory module (DIMM) or other electronic device package, may include a substrate with a layer of graphene configured to conduct thermal energy (e.g., heat) away from components mounted or affixed to the substrate. In some examples, a DIMM includes an uppermost or top layer of graphene that is exposed to the air and configured to allow connection of memory devices (e.g., DRAMs) to be soldered to the conducting pads of the substrate. The graphene may be in contact with parts of the memory device other than the electrical connections with the conducting pads and may thus be configured as a heat sink for the device. Other thin, conductive layers of may be used in addition to or as an alternative to graphene. Graphene may be complementary to other heat sink mechanisms.

    SEMICONDUCTOR PACKAGES WITH PASS-THROUGH CLOCK TRACES AND ASSOCIATED SYSTEMS AND METHODS

    公开(公告)号:US20230048780A1

    公开(公告)日:2023-02-16

    申请号:US17978029

    申请日:2022-10-31

    Abstract: Semiconductor packages with pass-through clock traces and associated devices, systems, and methods are disclosed herein. In one embodiment, a semiconductor device includes a package substrate including a first surface having a plurality of substrate contacts, a first semiconductor die having a lower surface attached to the first surface of the package substrate, and a second semiconductor die stacked on top of the first semiconductor die. The first semiconductor die includes an upper surface including a first conductive contact, and the second semiconductor die includes a second conductive contact. A first electrical connector electrically couples a first one of the plurality of substrate contacts to the first and second conductive contacts, and a second electrical connector electrically couples a second one of the plurality of substrate contacts to the first and second conductive contacts.

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