摘要:
A process for the production of electrolytic ion exchange membranes with a coating, comprising coarsening the surface of an ion exchange membrane by an ion-etching treatment and, thereafter, coating the coarsened surface with a substance with a low electrochemical activity. The use of these ion exchange membranes greatly reduces the electrolytic voltage while maintaining a high current efficiency, and enables electrolysis to be performed in a stable manner over a long period of time.
摘要:
A method for forming an anticorrosive coating on the surface of a metal substrate, which comprises, in one embodiment, (1) coating the surface of the metal substrate with an anticorrosive metal capable of forming an alloy with the substrate metal using a spraying procedure, and (2) then heating the coated surface in a vacuum or in an atmosphere substantially inert to the metal coating and metal substrate by irradiating electron beams or a plasma arc thereonto to form an alloy layer in the interface between the metal substrate and the metal coating and, in a second embodiment, subsequent to step (1) and prior to step (2) above coating a solution of a thermally decomposable platinum-group metal compound on the surface of the resulting coating, and heat-treating the coated product at about 50.degree. to about 300.degree. C.
摘要:
Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m2/g or less. It is preferable for the aluminum oxide abrasive grains to have an average secondary particle size of 0.1 μm or more and 20 μm or less. The polishing composition is used for polishing hard and brittle materials having a Vickers hardness of 1,500 Hv or higher, such as sapphire, silicon carbide, and gallium nitride.
摘要:
The present invention is a method of producing an ultraviolet light emitting phosphor material. This method includes a step of heat-treating a composition containing zinc and oxygen as main components and at least one selected from the group consisting of aluminum, gallium and indium as a sub-component, in the presence of at least two coexisting substances selected from the group consisting of zinc oxide, gallium oxide and phosphorus oxide under a non-oxidizing atmosphere.
摘要:
The present invention relates to a method of producing turbine blade, which comprises, (a) forging a plurality of turbine blades in a state where the plurality of turbine blades are integrally connected in a longitudinal direction, (b) heat treating the plurality of turbine blades in the integrally connected state, (c) machining the plurality of turbine blades in the integrally connected state, and (d) separating the plurality of turbine blades into individual turbine blades. According to the method, the number of processes for the forging work can be decreased, and forging efficiency can be enhanced. Moreover, an amount of burr which occurs during the forging work can be reduced, and hence, a yield of material can be improved, as compared with a case where the turbine blade is forged as a single body.
摘要:
A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.
摘要:
There is provided a laminated piezoelectric ceramic element manufacturing method, wherein, even when the number of internal electrode laminations is increased, the lamination and cutting steps can be simplified, to enhance cutting precision and make cutting cost low. A first laminated body having stripe-like internal electrodes is cut into a plurality of second laminated bodies so as to have a width-direction dimension W corresponding to a width dimension of a laminated piezoelectric ceramic element chip to be ultimately obtained. Two or more second laminated bodies are laminated in the laminating direction to obtain a third laminated body, and the third laminated body is cut in the laminating direction and parallel to the width direction W to obtain a laminated piezoelectric body.
摘要:
The present invention aims to provide a plasma display panel that can be driven at low voltage and can offer favorable image display performance. In order to achieve the aim, on a surface of the front panel 1 on which the display electrode 5 is formed, the protective layer 7 made by using a crystalline oxide material that contains a crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3 is disposed so as to face the discharge space 14. By using the crystalline oxide material that contains the crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3, chemical stability can be improved without reducing secondary electron emission efficiency. A PDP capable of lowering drive voltage compared with a case where MgO is used can be obtained by using the crystalline oxide material.
摘要:
A method for manufacturing a silicon single crystal. In this method, silicon material melting is performed in a furnace having an internal pressure between 60 and 400 mbar. The subsequent single crystal pulling is performed in a furnace having an internal pressure which is lower than the pressure when the silicon material is molten, but not exceeding 95 mbar. This method prevents production of a defective single crystal which results from the formation of pinholes, prevents dislocation of the single crystal which results from bubbles and impurities present in silicon melting solution, and prevents dislocation of the single crystal which results from evaporation of the SiO.