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18 条记录 (耗时 0.021 秒)

    POLISHING COMPOSITION
    1.
    发明申请
    POLISHING COMPOSITION 有权
    抛光组合物

    公开(公告)号：US20130324015A1

    公开(公告)日：2013-12-05

    申请号：US14000319

    申请日：2012-02-20

    申请人： Hiroshi Asano ,  Kazusei Tamai ,  Yasunori Okada

    发明人： Hiroshi Asano ,  Kazusei Tamai ,  Yasunori Okada

    IPC分类号： B24B37/04 ,  C09G1/02

    CPC分类号： B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/02024

    摘要： Provided is a polishing composition containing at least aluminum oxide abrasive grains and water, and having a pH of 8.5 or higher. The aluminum oxide abrasive grains have a specific surface area of 20 m2/g or less. It is preferable for the aluminum oxide abrasive grains to have an average secondary particle size of 0.1 μm or more and 20 μm or less. The polishing composition is used for polishing hard and brittle materials having a Vickers hardness of 1,500 Hv or higher, such as sapphire, silicon carbide, and gallium nitride.

    摘要翻译： 本发明提供至少含有氧化铝磨粒和水，pH值在8.5以上的抛光组合物。 氧化铝磨粒的比表面积为20m 2 / g以下。 优选氧化铝磨粒的平均二次粒径为0.1μm以上且20μm以下。 抛光组合物用于研磨维氏硬度为1500Hv或更高的硬质和脆性材料，例如蓝宝石，碳化硅和氮化镓。

    Polishing composition and polishing method using the same
    3.
    发明授权
    Polishing composition and polishing method using the same 有权
    抛光组合物和抛光方法使用相同

    公开(公告)号：US08702472B2

    公开(公告)日：2014-04-22

    申请号：US13042648

    申请日：2011-03-08

    申请人： Hitoshi Morinaga ,  Kazusei Tamai ,  Hiroshi Asano

    发明人： Hitoshi Morinaga ,  Kazusei Tamai ,  Hiroshi Asano

    IPC分类号： B24B1/00

    CPC分类号： C09G1/02 ,  C09K3/1463

    摘要： A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

    摘要翻译： 抛光组合物至少包含磨粒和水，并用于抛光待抛光物体。 选择磨粒以满足关系X1×Y1＆nlE; 0和关系X2×Y2> 0，其中X1 [mV]表示通过使用抛光组合物在物体抛光期间测量的磨料的ζ电位， Y1 [mV]表示通过使用抛光组合物在物体抛光期间测量的物体的ζ电位，X2 [mV]表示在研磨后的物体洗涤期间测量的磨粒的ζ电位，Y2 [mV]表示 抛光后物体洗涤时测量的物体的ζ电位。 磨粒优选为氧化硅，氧化铝，氧化铈，氧化锆，碳化硅或金刚石。 目的是优选含镍合金，氧化硅或氧化铝。

    COMPOSITION FOR POLISHING COMPOUND SEMICONDUCTOR
    4.
    发明申请
    COMPOSITION FOR POLISHING COMPOUND SEMICONDUCTOR 审中-公开
    用于抛光化合物半导体的组合物

    公开(公告)号：US20140248776A1

    公开(公告)日：2014-09-04

    申请号：US14237262

    申请日：2012-08-03

    申请人： Hiroshi Asano ,  Hitoshi Morinaga ,  Kazusei Tamai

    发明人： Hiroshi Asano ,  Hitoshi Morinaga ,  Kazusei Tamai

    IPC分类号： C09G1/02 ,  H01L21/306

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/2003

    摘要： Disclosed is a polishing composition that contains at least abrasive grains, an oxidizing agent having a redox potential equal to or greater than 1.8 V at a pH for application of polishing, and water. The abrasive grains are preferably composed of at least one substance selected from among silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, titanium oxide, manganese oxide, silicon carbide, and silicon nitride. The oxidizing agent is preferably composed of at least one substance selected from among sodium persulfate, potassium persulfate, and ammonium persulfate. The polishing composition preferably has a pH equal to or less than 3.

    摘要翻译： 公开了一种抛光组合物，其至少包含磨粒，在用于抛光的pH下具有等于或大于1.8V的氧化还原电位的氧化剂和水。 磨粒优选由选自氧化硅，氧化铝，氧化铈，氧化锆，氧化钛，氧化锰，碳化硅和氮化硅中的至少一种物质构成。 氧化剂优选由选自过硫酸钠，过硫酸钾和过硫酸铵中的至少一种物质组成。 抛光组合物优选具有等于或小于3的pH。

    Polishing Composition and Polishing Method Using The Same
    5.
    发明申请
    Polishing Composition and Polishing Method Using The Same 有权
    抛光组合和抛光方法使用它

    公开(公告)号：US20120142258A1

    公开(公告)日：2012-06-07

    申请号：US13042648

    申请日：2011-03-08

    申请人： Hitoshi Morinaga ,  Kazusei Tamai ,  Hiroshi Asano

    发明人： Hitoshi Morinaga ,  Kazusei Tamai ,  Hiroshi Asano

    IPC分类号： B24B1/00 ,  C09G1/02 ,  C09K3/14

    CPC分类号： C09G1/02 ,  C09K3/1463

    摘要： A polishing composition contains at least abrasive grains and water and is used in polishing an object to be polished. The abrasive grains are selected so as to satisfy the relationship X1×Y1≦0 and the relationship X2×Y2>0, where X1 [mV] represents the zeta potential of the abrasive grains measured during polishing of the object by using the polishing composition, Y1 [mV] represents the zeta potential of the object measured during polishing of the object by using the polishing composition, X2 [mV] represents the zeta potential of the abrasive grains measured during washing of the object after polishing, and Y2 [mV] represents the zeta potential of the object measured during washing of the object after polishing. The abrasive grains are preferably of silicon oxide, aluminum oxide, cerium oxide, zirconium oxide, silicon carbide, or diamond. The object is preferably of a nickel-containing alloy, silicon oxide, or aluminum oxide.

    摘要翻译： 抛光组合物至少包含磨粒和水，并用于抛光待抛光物体。 选择磨粒以满足关系X1×Y1＆nlE; 0和关系X2×Y2> 0，其中X1 [mV]表示通过使用抛光组合物在物体抛光期间测量的磨粒的ζ电位， Y1 [mV]表示通过使用抛光组合物在物体抛光期间测量的物体的ζ电位，X2 [mV]表示在研磨后的物体洗涤期间测量的磨粒的ζ电位，Y2 [mV]表示 抛光后物体洗涤时测量的物体的ζ电位。 磨粒优选为氧化硅，氧化铝，氧化铈，氧化锆，碳化硅或金刚石。 目的是优选含镍合金，氧化硅或氧化铝。

    POLISHING COMPOSITION AND POLISHING METHOD
    7.
    发明申请
    POLISHING COMPOSITION AND POLISHING METHOD 审中-公开
    抛光组合物和抛光方法

    公开(公告)号：US20080210665A1

    公开(公告)日：2008-09-04

    申请号：US12013967

    申请日：2008-01-14

    申请人： Kazusei Tamai ,  Yasuyuki Yamato

    发明人： Kazusei Tamai ,  Yasuyuki Yamato

    IPC分类号： B44C1/22

    CPC分类号： C09G1/02

    摘要： A polishing composition includes an abrasive, phosphoric acid, and an oxidizing agent and has a pH of 6 or less. The polishing composition has the capability for polishing an alloy containing nickel and iron with a high stock removal rate. Accordingly, the polishing composition is preferably used in an application for polishing an object including the alloy containing nickel and iron.

    摘要翻译： 抛光组合物包括研磨剂，磷酸和氧化剂，并且具有6或更小的pH。 抛光组合物具有抛光含有镍和铁的合金的能力，具有高的原料去除率。 因此，抛光组合物优选用于包括含有镍和铁的合金的物体的研磨用途。

    Polishing composition and polishing method employing it
    8.
    发明授权
    Polishing composition and polishing method employing it 有权
    抛光组合物和抛光方法

    公开(公告)号：US06773476B2

    公开(公告)日：2004-08-10

    申请号：US10200173

    申请日：2002-07-23

    申请人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

    发明人： Kenji Sakai ,  Kazusei Tamai ,  Tadahiro Kitamura ,  Tsuyoshi Matsuda ,  Katsuyoshi Ina

    IPC分类号： C09G102

    CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06

    摘要： A polishing composition comprising: (a) at least one abrasive selected from the group consisting of silicon dioxide and aluminum oxide, (b) at least one organic compound selected from the group consisting of a polyethylene oxide, a polypropylene oxide, a polyoxyethylene alkyl ether, a polyoxypropylene alkyl ether, a polyoxyethylenepolyoxypropylene alkyl ether and a polyoxyalkylene addition polymer having a C≡C triple bond, represented by the formula (1): wherein each of R1 to R6 is H or a C1-10 alkyl group, each of X and Y is an ethyleneoxy group or a propyleneoxy group, and each of m and n is a positive number of from 1 to 20, (c) at least one polishing accelerating compound selected from the group consisting of citric acid, oxalic acid, tartaric acid, glycine, &agr;-alanine and histidine, (d) at least one anticorrosive selected from the group consisting of benzotriazole, benzimidazole, triazole, imidazole and tolyltriazole, (e) hydrogen peroxide, and (f) water.

    摘要翻译： 一种抛光组合物，其包含：（a）至少一种选自二氧化硅和氧化铝的研磨剂，（b）至少一种选自聚环氧乙烷，聚环氧丙烷，聚氧乙烯烷基醚 ，聚氧亚丙基烷基醚，聚氧乙烯聚氧丙烯烷基醚和具有C = C三键的聚氧化烯加成聚合物，由式（1）表示：其中R 1至R 6各自为H或C 1-10烷基，X Y是乙烯氧基或丙烯氧基，m和n分别为1〜20的正数，（c）至少一种选自柠檬酸，草酸，酒石酸 ，甘氨酸，α-丙氨酸和组氨酸，（d）至少一种选自苯并三唑，苯并咪唑，三唑，咪唑和甲苯基三唑的防腐剂，（e）过氧化氢和（f）水。

    Process for producing polishing composition
    9.
    发明授权
    Process for producing polishing composition 有权
    抛光组合物的制造方法

    公开(公告)号：US06248144B1

    公开(公告)日：2001-06-19

    申请号：US09616974

    申请日：2000-07-14

    申请人： Kazusei Tamai ,  Katsuyoshi Ina

    发明人： Kazusei Tamai ,  Katsuyoshi Ina

    IPC分类号： C01B33141

    CPC分类号： C09G1/02 ,  B01F3/1214 ,  B01F2003/125 ,  B01F2215/0045 ,  H01L21/30625

    摘要： A process for producing a polishing composition, which comprises preliminarily adjusting water to pH 2-4, adding from 40 to 60 wt % of fumed silica to the water under high shearing force, adding water to lower the viscosity to 2-10000 cps, stirring the mixture under low shearing force for at least 5 minutes, adding water to lower the fumed silica concentration to 10-38 wt %, and adding a basic substance under vigorous stirring to raise the pH to 9-12.

    摘要翻译： 一种抛光组合物的制造方法，其特征在于，将水预先调节至pH2〜2-4，在高剪切力下，向水中添加40〜60重量％的热解法二氧化硅，加入水使粘度降至2-10000cps，搅拌 该混合物在低剪切力下至少5分钟，加入水以将煅制二氧化硅浓度降低至10-38重量％，并在剧烈搅拌下加入碱性物质以将pH升高至9-12。