公开(公告)号：US20100170872A1

公开(公告)日：2010-07-08

申请号：US12663662

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/00 ,  B08B6/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238

摘要： The plasma processing apparatus includes: a processing container including a metal; an electromagnetic wave source outputting an electromagnetic wave; a dielectric plate facing an inner wall of the processing container and transmitting the electromagnetic wave, which is output from the electromagnetic wave source, into the processing container; and a groove formed in an inner surface of the processing container and functioning as a propagation disturbing portion. If a low frequency microwave is supplied, the propagation of a conductor surface wave can be suppressed by the groove.

摘要翻译： 等离子体处理装置包括：包括金属的处理容器; 输出电磁波的电磁波源; 面向处理容器的内壁的电介质板，将从电磁波源输出的电磁波传送到处理容器内; 以及形成在处理容器的内表面中并用作传播干扰部分的凹槽。 如果提供低频微波，则可以通过沟槽来抑制导体表面波的传播。

公开(公告)号：US07723637B2

公开(公告)日：2010-05-25

申请号：US11592253

申请日：2006-11-03

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Takahiro Horiguchi

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32229

摘要： The purpose of the present invention is to provide homogeneous plasma in longitudinal direction of a plasma processing apparatus applicable to multiple processes. A microwave waveguide 10 with a plurality of variable couplers 12 is placed in a vacuum chamber 21. The microwave generated in a microwave generator 23 is introduced into the microwave waveguide 10 via a waveguide 24. And a plasma 22 in the chamber 21 is generated by the microwave 25. Intensity distribution of the microwave 25 in the microwave waveguide 10 can be varied by moving a plurality of variable couplers 12 individually upward or downward as shown by two-way arrow.

摘要翻译： 本发明的目的是提供适用于多个工艺的等离子体处理装置的纵向均匀等离子体。 具有多个可变耦合器12的微波波导10被放置在真空室21中。在微波发生器23中产生的微波通过波导管24被引入微波波导10中。室21中的等离子体22由 微波25.微波25中的微波25的强度分布可以通过单独向上或向下移动多个可变耦合器12来改变，如双向箭头所示。

公开(公告)号：US07670454B2

公开(公告)日：2010-03-02

申请号：US11337026

申请日：2006-01-23

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.

摘要翻译： 在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而 中等阻抗变化。 因此，提高供电效率，减少放电确保等离子体的稳定形成。

公开(公告)号：US07520245B2

公开(公告)日：2009-04-21

申请号：US10861388

申请日：2004-06-07

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/34

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。 高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。 为了使等离子体激发效率达到最大，在微波引入部分的介电材料隔离壁102和电介质材料中的每一个的厚度被优化，同时，缝隙天线110与电介质材料分离之间的距离 电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

公开(公告)号：US20090065480A1

公开(公告)日：2009-03-12

申请号：US11990309

申请日：2006-08-04

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B44C1/22 ,  C23F1/08 ,  B01J19/08 ,  C23C16/54

CPC分类号： H05H1/46 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed.

摘要翻译： 提供一种等离子体处理装置，即使在待处理基板面积大的情况下也能够进行均匀的处理。 等离子体处理装置通过槽将引入导波管的微波传播到电介质板，通过将供给真空容器的气体转换为等离子体状态，对基板的表面进行等离子体处理。 在等离子体处理装置中，多个波导管并列配置，为每个波导管布置多个电介质板，并且在相邻的电介质板之间配置由导体形成的分离构件。 通过垂直移动柱塞将波导管的管内波长调节为最佳值。 此外，在电介质板和相邻构件之间的空间中消除了意外的等离子体产生，并且可以有效地产生稳定的等离子体。 结果，可以进行诸如蚀刻，成膜，清洁，灰化等高速均匀的处理。

公开(公告)号：US07432468B2

公开(公告)日：2008-10-07

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K10/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。

公开(公告)号：US07374620B2

公开(公告)日：2008-05-20

申请号：US10555770

申请日：2004-04-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/32834 ,  H01J2237/022

摘要： A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.

摘要翻译： 公开了一种使用微波等离子体的基板处理装置（10A），其中在处理室（11）内设置有内隔壁（15），使得处理室（11）的内部被分成空间 ），其中容纳有待处理的基板和由所述内分隔壁（15）和所述处理室（11）的外壁限定的空间（11B）。 通过这样的结构，可以防止由密封材料分离的气体和由异常放电引起的基板污染导致的基板的污染，从而能够清洁基板的处理。

公开(公告)号：US07329609B2

公开(公告)日：2008-02-12

申请号：US10467820

申请日：2002-12-10

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama

IPC分类号： H01L21/302

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32357 ,  H01L21/02252 ,  H01L21/3143 ,  H01L21/318

摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.

摘要翻译： 在衬底处理装置中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的处理空间（11C）。 控制电极包括形成在处理容器中并具有用于使等离子体通过的多个孔（131a）的导电构件。 控制电极的表面被氧化铝或导电氮化物覆盖。 在基板处理装置中，将含有He和N 2的气体供给到处理容器中。 在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。 原子态氮N *用于氮化衬底的表面。

公开(公告)号：US07312415B2

公开(公告)日：2007-12-25

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： B23K10/00

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US20070235425A1

公开(公告)日：2007-10-11

申请号：US11694102

申请日：2007-03-30

申请人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Shinsuke Oka ,  Takahiro Horiguchi ,  Kazuaki Nishimura ,  Masayuki Kitamura ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32238

摘要： A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams 26 are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams 26 is equal to or greater than a cutoff plasma electron density Nc. The projecting beams 26 inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts 31 and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part 31 to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts 31 is diffused.

摘要翻译： 微波等离子体处理装置100允许通过多个狭槽37的微波透过由梁26支撑的多个电介质部分31，并使透射的微波将气体升高到等离子体并用等离子体处理衬底G. 使梁26朝向基板突出，以确保梁26的端部周围的等离子体电子密度Ne等于或大于截止等离子体电子密度Nc。 投影光束26抑制归因于通过相邻电介质部件31传播的微波的电场能产生的表面波的干扰，以及由在给定电介质部分31下产生的等离子体传播的电子和离子产生的干扰，以达到在相邻电介质部分31之下产生的等离子体 作为在各个电介质部31下产生的等离子体的介质部分扩散。