公开(公告)号：US20050250338A1

公开(公告)日：2005-11-10

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C16/511 ,  H01J37/32 ,  H01L21/302 ,  H01L21/316

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US07312415B2

公开(公告)日：2007-12-25

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： B23K10/00

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US06357385B1

公开(公告)日：2002-03-19

申请号：US09355229

申请日：1999-10-05

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： C23C1600

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/&mgr;0&sgr;)½, where &sgr;, &mgr;0 and &ohgr; respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 构件的厚度（d）大于（2 / mu0sigma）1/2，其中σ，μ0和ω分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US06719875B1

公开(公告)日：2004-04-13

申请号：US09365923

申请日：1999-08-03

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Ryu Kaiwara ,  Kazuhide Ino

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Ryu Kaiwara ,  Kazuhide Ino

IPC分类号： H05H100

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32697

摘要： The plasma process apparatus is capable of uniformalizing the density of a plasma generated thereby and a self-bias voltage associated therewith. This apparatus include two parallel plates electrodes I and II, one of electrodes I and II being configured for carrying a substrate to be plasma processed. The apparatus further includes a magnetic field applying means for applying a magnetic field horizontal and one-directional to a surface of the substrate. An additional element of the apparatus is a single auxiliary electrode positioned around the periphery of electrode I and having high-frequency power applied thereto. The alignment of the electrodes is such that they define a space where a plasma for use in processing the substrate is to be excited.

摘要翻译： 等离子体处理装置能够均匀化由此产生的等离子体的密度和与其相关联的自偏压。 该装置包括两个平行板电极I和II，电极I和II中的一个被配置为承载待等离子体处理的衬底。 该装置还包括一个磁场施加装置，用于将一个水平和一个方向的磁场施加到基板的表面。 设备的附加元件是位于电极I的周边周围并具有施加到其上的高频功率的单个辅助电极。 电极的对准使得它们限定了用于处理衬底的等离子体被激发的空间。

公开(公告)号：US08114245B2

公开(公告)日：2012-02-14

申请号：US10304869

申请日：2002-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/509 ,  C23C16/52 ,  C23C16/505 ,  C23C16/22 ,  C23C16/06

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

摘要翻译： 一种等离子体蚀刻装置，其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极，并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置，其具有两个平行板电极I和II以及RF功率施加装置，其基极设置在电极I上，并且相对于基板的表面是水平和单向的，其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中，在由磁场施加装置产生的电流的流动中，至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

公开(公告)号：US06585851B1

公开(公告)日：2003-07-01

申请号：US09380520

申请日：1999-11-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23F108

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/3266

摘要： A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

公开(公告)号：US6153068A

公开(公告)日：2000-11-28

申请号：US35325

申请日：1998-03-05

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Haruyuki Takano ,  Yusuke Hirayama

IPC分类号： C23C14/35 ,  H01J37/32 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/32082 ,  C23C14/354 ,  H01J37/3266 ,  H01J37/3402

摘要： The present invention provides a sputtering device provided with two electrodes I and II of parallel plate type within a vessel inside which pressure can be reduced, wherein: a target to be sputtered is placed on said electrode I, and a base body on which a film is to be deposited is placed on said electrode II, with the target and the base body being opposed to each other; a process gas is introduced into said vessel from a gas supply system; radio frequency power is applied to said target through at least said electrode I so as to excite plasma between the electrode I and the electrode II; characterized in that: outside said vessel, is provided a means for introducing magnetic field horizontal at least to a surface to be sputtered of said target.

摘要翻译： 本发明提供了一种溅射装置，其在容器内设置有平行板型的两个电极I和II，其中压力可以减小，其中：将被溅射的靶放置在所述电极I上， 被放置在所述电极II上，其中靶和基体彼此相对; 从气体供应系统将工艺气体引入所述容器中; 通过至少所述电极I向所述靶施加射频功率，以激发电极I和电极II之间的等离子体; 其特征在于，在所述容器外部设置有至少水平地将磁场引入要溅射所述靶的表面的装置。

公开(公告)号：US08241457B2

公开(公告)日：2012-08-14

申请号：US12058323

申请日：2008-03-28

申请人： Mitsuo Kato ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Mitsuo Kato ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/3299 ,  H01J37/32192 ,  H01J37/32935

摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.

摘要翻译： 微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

公开(公告)号：US20110146910A1

公开(公告)日：2011-06-23

申请号：US12997122

申请日：2009-06-05

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/08 ,  C23C16/50

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32238

摘要： Uniformity of a process on a substrate is improved. A plasma processing apparatus including a processing container which is formed of metal and receives a substrate to be plasma-processed, an electromagnetic wave source which supplies an electromagnetic wave required to excite plasma in the processing container, and a plurality of dielectrics, through which the electromagnetic wave supplied from the electromagnetic wave source transmits to the inside of the processing container and which have a part that is exposed to the inside of the processing container, on a lower surface of a lid of the processing container, wherein a metal electrode, which is electrically connected to the lid, is formed on a lower surface of each dielectric, a part of each dielectric exposed between the lower surface of the lid and the metal electrode has a substantially polygonal outline when viewed from the inside of the processing container, the plurality of dielectrics are disposed with vertical angles of the polygonal outlines being adjacent to each other, and a surface wave propagating portion, through which the electromagnetic wave is propagated, is formed on the lower surface of the lid exposed inside the processing container and a lower surface of the metal electrode.

摘要翻译： 基板上的工艺的均匀性得到改善。 一种等离子体处理装置，包括由金属形成并接收待等离子体处理的基板的处理容器，提供在处理容器中激发等离子体所需的电磁波的电磁波源，以及多个电介质， 电磁波源提供的电磁波在处理容器的盖的下表面上传送到处理容器的内部并且具有暴露于处理容器内部的部分，其中金属电极 电连接到盖，形成在每个电介质的下表面上，暴露在盖的下表面和金属电极之间的每个电介质的一部分从处理容器的内部观察时具有大致多边形的轮廓， 多个电介质被设置成具有彼此相邻的多边形轮廓的垂直角度， d暴露在处理容器内部的盖的下表面和金属电极的下表面上形成电磁波传播的表面波传播部分。

公开(公告)号：US20110121736A1

公开(公告)日：2011-05-26

申请号：US12997180

申请日：2009-06-03

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H1/24

CPC分类号： H01J37/32211 ,  H01J37/32192 ,  H01J37/32229

摘要： Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.

摘要翻译： 提供了一种等离子体处理装置，其具有输入侧的特性阻抗和输出侧的特性阻抗不同的同轴波导结构。 微波等离子体处理装置，其通过使用微波对气体进行等离子体处理，包括：处理容器; 输出微波的微波源，从微波源传输微波输出的第一同轴波导; 以及电介质板，其与第一同轴波导相邻，同时面向处理容器的内侧，并且将从第一同轴波导传输的微波发射到处理容器中。 第一同轴波导管的内导体和外导体之间的厚度比在纵向方向上不均匀。