公开(公告)号：US07939849B2

公开(公告)日：2011-05-10

申请号：US12461681

申请日：2009-08-20

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L21/00

CPC classification number: H01L33/0025 ,  H01L25/0753 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/483 ,  H01L33/62

Abstract: A light emitting diode includes a transparent substrate and a GaN buffer layer on the transparent substrate. An n-GaN layer is formed on the buffer layer. An active layer is formed on the n-GaN layer. A p-GaN layer is formed on the active layer. A p-electrode is formed on the p-GaN layer and an n-electrode is formed on the n-GaN layer. A reflective layer is formed on a second side of the transparent substrate. Also, a cladding layer of AlGaN is between the p-GaN layer and the active layer.

Abstract translation: 发光二极管包括在透明基板上的透明基板和GaN缓冲层。 在缓冲层上形成n-GaN层。 在n-GaN层上形成有源层。 在活性层上形成p-GaN层。 在p-GaN层上形成p电极，在n-GaN层上形成n电极。 在透明基板的第二面上形成反射层。 此外，AlGaN的包覆层在p-GaN层和有源层之间。

公开(公告)号：US20110049470A1

公开(公告)日：2011-03-03

申请号：US12941627

申请日：2010-11-08

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/04 ,  H01L33/30

CPC classification number: H01L33/325 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01S5/3013

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract translation: 发光二极管包括导电层，导电层上的n-GaN层，n-GaN层上的有源层，有源层上的p-GaN层和p-GaN层上的p电极 。 导电层是n电极。

公开(公告)号：US07821021B2

公开(公告)日：2010-10-26

申请号：US11593470

申请日：2006-11-07

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/325 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01S5/3013

Abstract: A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.

Abstract translation: 发光二极管包括导电层，导电层上的n-GaN层，n-GaN层上的有源层，有源层上的p-GaN层和p-GaN层上的p电极 。 导电层是n电极。

公开(公告)号：US07816705B2

公开(公告)日：2010-10-19

申请号：US12458703

申请日：2009-07-21

Applicant: Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

Inventor： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Abstract translation: 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US20100171125A1

公开(公告)日：2010-07-08

申请号：US12654992

申请日：2010-01-12

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract translation: 由发射第一波长的光的LED芯片和LED芯片上的薄膜层组成的发光LED器件改变发光的颜色。 例如，可以使用蓝色LED芯片来产生白光。 薄膜层有利地由诸如磷光体的荧光材料组成，和/或包括锡。 使用化学气相沉积有利地沉积薄膜层。

公开(公告)号：US20100117096A1

公开(公告)日：2010-05-13

申请号：US12689934

申请日：2010-01-19

Applicant: Myung Cheol Yoo ,  Dong Woo Kim ,  Geun Young Yeom

Inventor： Myung Cheol Yoo ,  Dong Woo Kim ,  Geun Young Yeom

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/20 ,  H01L33/405 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention provides a reliable technique to fabricate a new vertical structure compound semiconductor devices with highly improved light output. An exemplary embodiment of a method of fabricating light emitting semiconductor devices comprising the steps of forming a light emitting layer, and forming an undulated surface over light emitting layer to improve light output. In one embodiment, the method further comprises the step of forming a lens over the undulated surface of each of the semiconductor devices. In one embodiment, the method of claim further comprises the steps of forming a contact pad over the semiconductor structure to contact with the light emitting layer, and packaging each of the semiconductor devices in a package including an upper lead frame and lower lead frame. Advantages of the invention include an improved technique for fabricating semiconductor devices with great yield, reliability and light output.

Abstract translation: 本发明提供了一种制造具有高度改进的光输出的新的垂直结构化合物半导体器件的可靠技术。 一种制造发光半导体器件的方法的示例性实施例，包括以下步骤：形成发光层，并在发光层上形成凹凸表面以改善光输出。 在一个实施例中，该方法还包括在每个半导体器件的波状表面上形成透镜的步骤。 在一个实施例中，权利要求的方法进一步包括以下步骤：在半导体结构上形成与发光层接触的接触焊盘，以及将每个半导体器件封装在包括上引线框和下引线框的封装中。 本发明的优点包括用于制造具有高产率，可靠性和光输出的半导体器件的改进技术。

公开(公告)号：US07649210B2

公开(公告)日：2010-01-19

申请号：US11978680

申请日：2007-10-30

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L29/74 ,  H01L29/267 ,  H01L23/34

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

公开(公告)号：US20090278161A1

公开(公告)日：2009-11-12

申请号：US12458703

申请日：2009-07-21

Applicant: Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

Inventor： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

公开(公告)号：US07576368B2

公开(公告)日：2009-08-18

申请号：US11896772

申请日：2007-09-05

Applicant: Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

Inventor： Jong-Lam Lee ,  In-Kwon Jeong ,  Myung Cheol Yoo

IPC: H01L33/00

CPC classification number: H01L33/12 ,  H01C7/006 ,  H01C7/008 ,  H01L27/0802 ,  H01L28/20 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L33/36 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/62 ,  Y10S438/958 ,  Y10S438/977

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Abstract translation: 在诸如蓝宝石的绝缘基板上制造诸如GaN LED的半导体器件的方法。 使用正常的半导体处理技术在绝缘基板上制造半导体层。 然后，通过使用电感耦合的等离子体反应离子蚀刻，有利地通过半导体层形成限定各个器件的边界的沟槽并进入绝缘衬底。 然后用容易去除的层填充沟槽。 然后在半导体层（例如通过电镀或通过沉积）形成金属支撑结构，并且去除绝缘基板。 然后将电触点，钝化层和金属焊盘添加到各个器件中，然后将各个器件切出。

公开(公告)号：US06841802B2

公开(公告)日：2005-01-11

申请号：US10179010

申请日：2002-06-26

Applicant: Myung Cheol Yoo

Inventor： Myung Cheol Yoo

IPC: H01L33/44 ,  H01L33/50 ,  H01L27/15

CPC classification number: H01L33/504 ,  H01L24/48 ,  H01L24/49 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/502 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2224/4918 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a thin film layer over the LED chip that changes the color of the emitted light. For example, a blue LED chip can be used to produce white light. The thin film layer beneficially consists of a florescent material, such as a phosphor, and/or includes tin. The thin film layer is beneficially deposited using chemical vapor deposition.

Abstract translation: 由发射第一波长的光的LED芯片和LED芯片上的薄膜层组成的发光LED器件改变发光的颜色。 例如，可以使用蓝色LED芯片来产生白光。 薄膜层有利地由诸如磷光体的荧光材料组成，和/或包括锡。 使用化学气相沉积有利地沉积薄膜层。