摘要:
A solid-state imaging device according to an aspect of the present invention includes: an imaging unit which includes pixel units arranged in rows and columns; a row select unit which selects at least one row of the pixel units; column signal lines respectively provided for the columns, and transmit pixel signals from the selected at least one row of the pixel units; amplifier circuits respectively provided for the columns, and each includes an input terminal connected to a corresponding column signal line and an output terminal through which the amplifier circuit outputs an amplified pixel signal; switch circuits respectively provided for the columns, and each switches ON and OFF of a corresponding amplifier circuit; and bypass circuits respectively provided for the columns, and each allows a pixel signal to bypass from the input terminal to the output terminal of a corresponding amplifier circuit when the corresponding amplifier circuit is OFF.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要:
A lithium secondary battery includes a positive electrode made from a positive electrode active material and a semiconductor substrate that is directly laminated on the positive electrode. A charge carrier formed in the positive electrode active material when the lithium secondary battery is charged and a carrier of the semiconductor substrate are the same, and the semiconductor substrate is used as a collector.
摘要:
An imaging device reads an output level of a pixel circuit constituting a pixel array by supplying current to the pixel circuit. It reads a signal level and reset level from the pixel circuit by supplying it with the current from a current source circuit, and stores them into a line memory. A pixel level of the pixel circuit is obtained by a differential amplifier that outputs the difference between the signal level and reset level of the same pixel circuit. The gate potential of a current copier transistor that supplies the read current is set at a value that enables the read current to take a constant value from column to column of the pixel array. The image device can suppress variations in the current copier circuit provided for each array column of the pixel circuits, thereby reducing string-like noise in the image picked up.
摘要:
A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×1015 cm−3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produced in the gate oxide film and at the interface between the gate oxide film and the surface channel layer becomes extremely small. As a result, carrier traps are prevented from being produced by silicon nitride, resulting in stable FET characteristics and high reliability to the gate oxide film.
摘要翻译:由碳化硅制成的垂直型功率MOSFET包括掺杂有氮作为掺杂剂的表面沟道层,其浓度等于或小于1×10 15 cm -3。 因此,当在表面沟道层上形成栅极氧化膜时,在栅极氧化膜中产生的氮化硅的量和栅氧化膜与表面沟道层之间的界面变得非常小。 结果,阻止了由氮化硅产生载流子阱,从而导致稳定的FET特性和对栅氧化膜的高可靠性。
摘要:
An apparatus for sensing and processing images is provided with a photo detector array arranged in a matrix form, a control circuit for feeding a row of the array with voltage for sensitivity control, and a neural network for processing current flowing from a column of the array to the ground in order to obtain an apparatus for sensing and processing images having a simple configuration, a high frame speed, the capability of forming a focus of attention, and high throughput of data and possibility of connecting to the neural network.
摘要:
In an image sensing apparatus, an array of two-dimensional matrix of photosensitive devices is used to detect an image. Each photosensitive device comprises a photosensor accumulating carriers when exposed to a light, control terminals, and an output terminal. A signal generator supplies a vector or a one-dimensional data to the control terminals in the array to output pixel data of the two-dimensional matrix, and the pixel signal is output through the output terminal. The control terminals of the photosensors arranged along each line are connected commonly, while the output terminals thereof arranged along each column are connected commonly. A controller supplies control signals to the control terminals. Then, pixel signal for columns designated by a control signal are output through an output circuit connected to the control terminals. Then, a partial region in the array including a region exposed by the light is determined according to the pixel signals, and data on the partial region is sent to the controller. Then, the controller supplies control signals in correspondence to the partial region. Then, correlation operation of the control signals with the amount of carriers in the photosensors are carried out while reading the pixel signals, and the pixel signals in the partial region is output.
摘要:
A silicon semiconductor substrate, on which an epitaxial layer is to be formed, is set in a reaction vessel having a heating mechanism, and a gas containing TMG and AsH.sub.3 is introduced into the reaction vessel with the substrate heated to 450.degree. C., thus forming, on the substrate, a low-temperature growth layer of amorphous or polycrystalline GaAs as a semiconductor substance having a different lattice constant from that of the substrate. Then, with the TMG removed from the introduced gas, the temperature of the semiconductor substrate is increased to 750.degree. C., to cause coagulation of atoms of the low-temperature growth layer, with a thermal treatment also being performed at this high temperature, to cause growth of island-like single crystal cores. Further, a high temperature growth process is conducted in a material gas atmosphere containing TMG, whereby a GaAs film is epitaxially grown on the semiconductor substrate surface.
摘要:
A liquid crystal type dazzle-free reflection mirror has a scattering type liquid crystal cell such as DSM liquid crystal switching the orientation of the liquid crystal molecular axis thereof between a random orientation and a regular orientation depending on an electric field applied thereto. At least one coloring filter cell such as guest-host liquid crystal provided at a front side of the scattering type liquid crystal cell to which light is incident and switching, depending on an electric field applied thereto, between two light transmitting states in which white light is transmitted and specific color light is transmitted more, respectively. A reflection mirror layer reflecting the light transmitted through the scattering type liquid crystal cell and the coloring filter cell is provided behind the scattering type liquid crystal cell so that a reflection image may be provided on the mirror surface.
摘要:
A control apparatus for a dazzle-free reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor and a circuit for driving the reflection mirror into a dazzle-free condition in accordance with an intensity of a rear light detected by said rear light sensor when a light switch is turned on. The control apparatus is further provided with a winker manipulation detecting switch, a reverse position detecting switch and a steering wheel detecting switch for detecting a change in the moving direction of the vehicle. When one of them detects the change in the vehicle moving direction, the dazzle-free operation of the reflection mirror is disabled even if intensive light is incident to the reflection mirror from the rear of the vehicle.