Hybrid CMOS image sensor with event driven sensing

    公开(公告)号:US11240454B2

    公开(公告)日:2022-02-01

    申请号:US16862337

    申请日:2020-04-29

    Inventor: Zhe Gao Tiejun Dai

    Abstract: An image sensor includes a source follower coupled to a photodiode to generate an image signal responsive to photogenerated charge. The image signal is received by image readout circuitry through a row select transistor. A reset transistor resets the photogenerated charge. A first node of mode select circuit is coupled to the reset transistor, a second node is coupled to a pixel supply voltage, and a third node is coupled to an event driven circuit. The mode select circuit couples the first node to the second node during an imaging mode to supply the pixel supply voltage to the reset transistor. The mode select circuit is further configured to couple the first node to the third node during an event driven mode to couple a photocurrent of the photodiode to drive the event driven circuit through the reset transistor to detect changes in the photocurrent.

    Sample and hold switch driver circuitry with slope control

    公开(公告)号:US11212467B2

    公开(公告)日:2021-12-28

    申请号:US16516067

    申请日:2019-07-18

    Abstract: A switch driver circuit includes a first transistor coupled between a voltage supply and a first output node. A second transistor is coupled between the first output node and a first discharge node. A first slope control circuit is coupled to the first discharge node to discharge the first discharge node at a first slope. A third transistor is coupled between the voltage supply and a second output node. A fourth transistor is coupled between the second output node and a second discharge node. A second slope control circuit coupled to the second discharge node to discharge the second discharge node at a second slope. The first and second slopes are mismatched.

    LAYOUT DESIGN OF DUAL ROW SELECT STRUCTURE

    公开(公告)号:US20210358994A1

    公开(公告)日:2021-11-18

    申请号:US17066277

    申请日:2020-10-08

    Abstract: A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

    High dynamic range high speed CMOS image sensor design

    公开(公告)号:US11140352B1

    公开(公告)日:2021-10-05

    申请号:US17121423

    申请日:2020-12-14

    Abstract: A readout circuit for use in an image sensor includes a first sample and hold (SH) circuit coupled to a bitline that is coupled to a pixel array. A second SH circuit is coupled to the bitline. A bypass switch is coupled to the bitline, the first SH circuit, and the second SH circuit. An analog to digital converter (ADC) is coupled to the bypass switch. The bypass switch is configured to provide an image charge value from the pixel array to the ADC through the bitline, or through one of the first SH circuit or the second SH circuit in response to a switch select signal.

    Bitline settling speed enhancement
    45.
    发明授权

    公开(公告)号:US10834351B2

    公开(公告)日:2020-11-10

    申请号:US16199887

    申请日:2018-11-26

    Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.

    BITLINE SETTLING SPEED ENHANCEMENT
    46.
    发明申请

    公开(公告)号:US20200169682A1

    公开(公告)日:2020-05-28

    申请号:US16199887

    申请日:2018-11-26

    Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.

    Feedback capacitor and method for readout of hybrid bonded image sensors

    公开(公告)号:US10263031B2

    公开(公告)日:2019-04-16

    申请号:US15421911

    申请日:2017-02-01

    Abstract: A hybrid-bonded image sensor has a photodiode die with multiple macrocells; each macrocell has at least one photodiode and a coupling region. The coupling regions couple to a coupling region of a macrocell unit of a supporting circuitry die where they feed an input of an amplifier and a feedback capacitor. The feedback capacitor also couples to output of the amplifier, and the amplifier inverts between the input and the output. The method includes resetting a photodiode of the photodiode die; coupling signal from photodiode through the bond point to the supporting circuitry die to a feedback capacitor and to an input of the amplifier, the feedback capacitor also coupled to an inverting output of the amplifier; and amplifying the signal with the amplifier, where a capacitance of the feedback capacitor determines a gain of the amplifier.

    Imaging sensor with amplifier having variable bias and increased output signal range

    公开(公告)号:US09961292B1

    公开(公告)日:2018-05-01

    申请号:US15420531

    申请日:2017-01-31

    CPC classification number: H03F3/082 H03F1/0261 H03F1/223 H04N5/355 H04N5/3745

    Abstract: A pixel circuit includes a photodiode, and a transfer transistor coupled to the photodiode. A floating diffusion is coupled to the transfer transistor coupled to transfer image charge from the photodiode to the floating diffusion. An amplifier circuit includes an input coupled to the floating diffusion, an output coupled to generate an image data signal of the pixel circuit, and a variable bias terminal coupled to receive a variable bias signal. A reset switch is coupled between the output and input of the amplifier circuit to reset the amplifier circuit in response to a reset signal. A variable bias generator circuit is coupled to generate the variable bias signal in response to a reset signal to transition the variable bias signal from a first bias signal value to a second bias signal value in response to a transition of the reset signal from an active state to an inactive state.

    Entrenched transfer gate
    50.
    发明授权
    Entrenched transfer gate 有权
    固定的转移门

    公开(公告)号:US09570507B2

    公开(公告)日:2017-02-14

    申请号:US13897189

    申请日:2013-05-17

    Abstract: An image sensor pixel includes a semiconductor layer, a photosensitive region to accumulate photo-generated charge, a floating node, a trench, and an entrenched transfer gate. The photosensitive region and the trench are disposed within the semiconductor layer. The trench extends into the semiconductor layer between the photosensitive region and the floating node and the entrenched transfer gate is disposed within the trench to control transfer of the photo-generated charge from the photosensitive region to the floating node.

    Abstract translation: 图像传感器像素包括半导体层,用于积累光电荷的光敏区域,浮动节点,沟槽和根深蒂的传输门。 感光区域和沟槽设置在半导体层内。 沟槽延伸到光敏区域和浮动节点之间的半导体层中,并且固定的传输栅极设置在沟槽内,以控制光生电荷从感光区域到浮动节点的转移。

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