Conductive polishing article for electrochemical mechanical polishing
    44.
    发明授权
    Conductive polishing article for electrochemical mechanical polishing 失效
    电化学机械抛光用导电抛光制品

    公开(公告)号:US06979248B2

    公开(公告)日:2005-12-27

    申请号:US10140010

    申请日:2002-05-07

    摘要: An article of manufacture, method, and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a body comprising at least a portion of fibers coated with a conductive material, conductive fillers, or combinations thereof, and adapted to polish the substrate. In another aspect, a polishing article includes a body having a surface adapted to polish the substrate and at least one conductive element embedded in the polishing surface, the conductive element comprising dielectric or conductive fibers coated with a conductive material, conductive fillers, or combinations thereof. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. A plurality of perforations and a plurality of grooves may be formed in the articles to facilitate flow of material through and around the polishing article.

    摘要翻译: 提供了一种用于平坦化基板表面的制造方法和装置。 在一个方面,提供了一种制造用品,用于抛光包括抛光制品的基材,所述抛光制品具有主体,该主体包括涂覆有导电材料的纤维的至少一部分,导电填料或其组合,并适于抛光该基材。 在另一方面,抛光制品包括具有适于抛光基底的表面和嵌入在抛光表面中的至少一个导电元件的主体,该导电元件包括​​涂覆有导电材料的电介质或导电纤维,导电填料或其组合 。 导电元件可以具有延伸超过由抛光表面限定的平面的接触表面。 可以在制品中形成多个穿孔和多个凹槽以促进材料通过和抛光制品周围的流动。

    System architecture of semiconductor manufacturing equipment
    45.
    发明授权
    System architecture of semiconductor manufacturing equipment 失效
    半导体制造设备的系统架构

    公开(公告)号:US06897146B2

    公开(公告)日:2005-05-24

    申请号:US10602225

    申请日:2003-06-23

    摘要: A semiconductor manufacturing equipment wherein degas chamber(s) are integrated to the conventional pass-through chamber location. A preferred embodiment for depositing Cu barrier and seed layers on a semiconductor wafer comprises a front opening unified pod(s), a single wafer loadlock chamber(s), a degas chamber(s), a preclean chamber(s), a Ta or TaN process chamber(s), and a Cu process chamber(s). The degas chamber is integrated to a pass-through chamber. Such system may achieve system throughput higher than 100 wafers per hour.

    摘要翻译: 一种半导体制造设备,其中脱气室与常规的通过腔室位置集成。 用于在半导体晶片上沉积Cu阻挡层和种子层的优选实施例包括前开口统一吊舱,单个晶片负荷锁定室,脱气室,预清洁室,Ta或 TaN处理室和一个或多个Cu处理室。 脱气室集成到通气室。 这样的系统可以实现高于每小时100个晶片的系统吞吐量。

    Method of conditioning electrochemical baths in plating technology
    46.
    发明授权
    Method of conditioning electrochemical baths in plating technology 失效
    电镀技术中电化学浴的调理方法

    公开(公告)号:US06893548B2

    公开(公告)日:2005-05-17

    申请号:US09882208

    申请日:2001-06-13

    摘要: An apparatus and method is provided for analyzing or conditioning an electrochemical bath. One aspect of the invention provides a method for analyzing an electrochemical bath in an electrochemical deposition process including providing a first electrochemical bath having a first bath composition, utilizing the first electrochemical bath in an electrochemical deposition process to form a second electrochemical bath having a second bath composition and analyzing the first and second compositions to identify one or more constituents generated in the electrochemical deposition process. Additive material having a composition that is substantially the same as all or at least some of the one or more constituents generated in the electrochemical deposition process may be added to another electrochemical bath to produce a desired chemical composition. The constituents may be added at the beginning of the use of the bath to initially condition the electrochemical bath or may be added, preferably either continuously or periodically, during the electrochemical deposition process.

    摘要翻译: 提供了一种用于分析或调理电化学浴的装置和方法。 本发明的一个方面提供了一种用于在电化学沉积方法中分析电化学浴的方法,包括提供具有第一浴组成的第一电化学浴,利用电化学沉积工艺中的第一电化学浴形成具有第二浴的第二电化学浴 组合和分析第一和第二组合物以鉴定在电化学沉积过程中产生的一种或多种成分。 具有与在电化学沉积工艺中产生的一种或多种成分中的全部或至少一些基本上相同的组成的添加剂材料可以加入到另一电化学浴中以产生所需的化学组成。 可以在使用浴的开始时添加组分以最初调节电化学浴,或者可以在电化学沉积过程期间连续地或周期性地添加。

    Passively improving magnetic field homogeneity
    47.
    发明授权
    Passively improving magnetic field homogeneity 失效
    被动改善磁场均匀性

    公开(公告)号:US5003266A

    公开(公告)日:1991-03-26

    申请号:US379353

    申请日:1989-07-12

    IPC分类号: G01R33/3873

    CPC分类号: G01R33/3873

    摘要: Shim holding independently accessible open cavities are attached to the magnet bore. The holding independently accessible open cavities are arranged in rows and columns to provide readily identifiable locations. The shim holding indpendently accessible open cavities increase the effeciency of shimming to improve the homogeneity of magnets in magnetic resonance systems.

    摘要翻译: 保持独立开放的腔的垫片附接到磁体孔。 保持独立开放的腔体以行和列布置以提供易于识别的位置。 保持独立开口的垫片增加了垫片的有效性,以提高磁共振系统中磁体的均匀性。

    Method of depositing materials on a non-planar surface

    公开(公告)号:US08580037B2

    公开(公告)日:2013-11-12

    申请号:US12482263

    申请日:2009-06-10

    申请人: Ratson Morad

    发明人: Ratson Morad

    摘要: A method of depositing materials on a non-planar surface is disclosed. The method is effectuated by rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a method effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

    Method of depositing materials on a non-planar surface
    50.
    发明授权
    Method of depositing materials on a non-planar surface 失效
    在非平面表面上沉积材料的方法

    公开(公告)号:US08318609B2

    公开(公告)日:2012-11-27

    申请号:US12633589

    申请日:2009-12-08

    IPC分类号: H01L21/31

    摘要: A carrier for effectuating semiconductor processing on a non-planar substrate is disclosed. The carrier is configured for holding at least one non-planar substrate throughout a semiconductor processing step and concurrently rotating non-planar substrates as they travel down a translational path of a processing chamber. As the non-planar substrates simultaneously rotate and translate down a processing chamber, the rotation exposes the whole or any desired portion of the surface area of the non-planar substrates to the deposition process, allowing for uniform deposition as desired. Alternatively, any predetermined pattern is able to be exposed on the surface of the non-planar substrates. Such a carrier effectuates manufacture of non-planar semiconductor devices, including, but not limited to, non-planar light emitting diodes, non-planar photovoltaic cells, and the like.

    摘要翻译: 公开了一种用于在非平面基板上实现半导体处理的载体。 载体构造成用于在整个半导体处理步骤中保持至少一个非平面基底,并且当它们沿着处理室的平移路径行进时同时旋转非平面基底。 随着非平面基板同时旋转并且向下平移处理室,旋转将非平面基板的表面积的整个或任何所需部分暴露于沉积工艺,从而允许根据需要均匀沉积。 或者,任何预定图案能够暴露在非平面基板的表面上。 这种载体实现非平面半导体器件的制造,包括但不限于非平面发光二极管,非平面光伏电池等。