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公开(公告)号：US12048227B2
公开(公告)日：2024-07-23
申请号：US17428736
申请日：2020-02-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Ryo Hatsumi , Taisuke Kamada , Daisuke Kubota , Rai Sato , Hiroki Adachi , Ryo Yamauchi , Kazunori Watanabe
CPC classification number: H10K59/60 , G09G3/30 , G09G3/3208 , H10K50/865 , H10K59/30 , G09G2360/142
Abstract: A display device having a function of sensing light is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light shielding layer are each positioned between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode over the first substrate, an active layer over the first pixel electrode, and a common electrode over the active layer. The light-emitting element includes a second pixel electrode over the first substrate, a first light-emitting layer over the second pixel electrode, and the common electrode over the first light-emitting layer. The resin layer and the light shielding layer are each positioned between the common electrode and the second substrate. The resin layer includes a portion overlapping with the light-emitting element. The light shielding layer includes a portion positioned between the common electrode and the resin layer. The resin layer includes a portion overlapping with the light-receiving element or is provided in an island shape. At least part of light passing through the second substrate enters the light-receiving element without through the resin layer.
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公开(公告)号：US11856836B2
公开(公告)日：2023-12-26
申请号：US17479329
申请日：2021-09-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Kayo Kumakura , Yuka Sato , Satoru Idojiri , Hiroki Adachi , Kenichi Okazaki
IPC: H01L27/15 , H10K71/00 , H10K50/842 , H10K71/40 , H10K77/10
CPC classification number: H10K71/00 , H10K50/8426 , H10K71/40 , H10K77/111
Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.-
公开(公告)号：US11672148B2
公开(公告)日：2023-06-06
申请号：US17307088
申请日：2021-05-04
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei Yamazaki , Masakatsu Ohno , Hiroki Adachi , Satoru Idojiri , Koichi Takeshima
IPC: H01L27/00 , H01L27/32 , H01L51/00 , H01L51/56 , H01L51/52 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08 , H01L51/50 , H01L41/314
CPC classification number: H01L27/3272 , B23K26/04 , B23K26/0617 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/083 , H01L27/1225 , H01L27/1266 , H01L27/322 , H01L27/3258 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78603 , H01L51/003 , H01L51/0024 , H01L51/0027 , H01L51/0097 , H01L51/5246 , H01L51/5253 , H01L51/56 , H01L27/3244 , H01L41/314 , H01L51/5096 , H01L51/5284 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2251/558 , Y02E10/549 , Y02P70/50
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US11616206B2
公开(公告)日：2023-03-28
申请号：US17177457
申请日：2021-02-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu Ohno , Kayo Kumakura , Hiroyuki Watanabe , Seiji Yasumoto , Satoru Idojiri , Hiroki Adachi
IPC: H01L51/00 , H01L27/12 , H01L27/32 , H01L51/52 , H01L29/786
Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.
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公开(公告)号：US11574937B2
公开(公告)日：2023-02-07
申请号：US16983394
申请日：2020-08-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masataka Sato , Masakatsu Ohno , Seiji Yasumoto , Hiroki Adachi
Abstract: A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.
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Patent Agency Ranking
公开(公告)号：US10854697B2
公开(公告)日：2020-12-01
申请号：US16204102
申请日：2018-11-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masakatsu Ohno , Hiroki Adachi , Satoru Idojiri , Koichi Takeshima
IPC: H01L27/32 , H01L51/00 , H01L51/56 , H01L51/52 , H01L27/12 , H01L29/24 , H01L29/66 , H01L29/786 , B23K26/0622 , B23K26/04 , B23K26/06 , B23K26/08 , H01L51/50 , H01L41/314
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US20200273935A1
公开(公告)日：2020-08-27
申请号：US16872806
申请日：2020-05-12
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masakatsu Ohno , Hiroki Adachi , Satoru Idojiri , Koichi TAKESHIMA
IPC: H01L27/32 , B23K26/04 , B23K26/08 , H01L51/00 , H01L29/786 , B23K26/06 , H01L27/12 , B23K26/0622 , H01L51/52 , H01L29/24 , H01L51/56 , H01L29/66
Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
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公开(公告)号：US10693097B2
公开(公告)日：2020-06-23
申请号：US15646146
申请日：2017-07-11
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Seiji Yasumoto , Masataka Sato , Hiroki Adachi , Toru Takayama , Natsuko Takase
IPC: H01L51/50 , G09G5/02 , H01L51/52 , G09G3/20 , G02F1/1362 , G09G3/3233 , G09G3/36 , G02F1/1335
Abstract: A first display element includes a first pixel electrode that reflects visible light, a liquid crystal layer, and a first common electrode that transmits visible light. A second display element includes a second pixel electrode that transmits visible light, a light-emitting layer, and a second common electrode that reflects visible light. A separation layer that reflects visible light is formed over a formation substrate, an insulating layer is formed over the separation layer, and the second display element is formed over the insulating layer. The formation substrate and a second substrate are bonded to each other. Then, the formation substrate and the separation layer are separated from each other. The exposed separation layer is processed into the first pixel electrode. The liquid crystal layer is positioned between the first common electrode and the first pixel electrode and a first substrate and the second substrate are bonded to each other.
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公开(公告)号：US10583641B2
公开(公告)日：2020-03-10
申请号：US15804319
申请日：2017-11-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Masakatsu Ohno , Yoshiharu Hirakata , Shingo Eguchi , Yasuhiro Jinbo , Hisao Ikeda , Kohei Yokoyama , Hiroki Adachi , Satoru Idojiri
Abstract: A yield in the step of bonding two members together is improved. A bonding apparatus includes a stage capable of supporting a first member having a sheet-like shape, a fixing mechanism capable of fixing one end portion of a second member having a sheet-like shape so that the second member overlaps with the first member, and a pressurizing mechanism capable of moving from a side of the one end portion of the second member to a side of the other end portion and spreading a bonding layer under pressure between the first member and the second member. The first member and the second member are bonded to each other.
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50.发明授权公开(公告)号：US10134904B2
公开(公告)日：2018-11-20
申请号：US14976411
申请日：2015-12-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroki Adachi , Kayo Kumakura
IPC: H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
Abstract: Provided is a flexible device with fewer defects caused by a crack or a flexible device having high productivity. A semiconductor device including: a display portion over a flexible substrate, including a transistor and a display element; a semiconductor layer surrounding the display portion; and an insulating layer over the transistor and the semiconductor layer. When seen in a direction perpendicular to a surface of the flexible substrate, an end portion of the substrate is substantially aligned with an end portion of the semiconductor layer, and an end portion of the insulating layer is positioned over the semiconductor layer.
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