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    Electro-optic device with multiple photonic layers and related methods
    42.
    发明授权
    Electro-optic device with multiple photonic layers and related methods 有权

    公开(公告)号：US10393958B2

    公开(公告)日：2019-08-27

    申请号：US16029365

    申请日：2018-07-06

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frédéric Boeuf ,  Charles Baudot

    IPC: G02B6/12 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H02S40/44 ,  H01L25/04

    Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

    INTEGRATED PHOTONIC DEVICE WITH IMPROVED OPTICAL COUPLING
    44.
    发明申请
    INTEGRATED PHOTONIC DEVICE WITH IMPROVED OPTICAL COUPLING 审中-公开

    公开(公告)号：US20190049664A1

    公开(公告)日：2019-02-14

    申请号：US16156601

    申请日：2018-10-10

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Frederic Boeuf ,  Charles Baudot

    IPC: G02B6/12 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

    Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

    Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process
    46.
    发明授权
    Integrated hybrid laser source compatible with a silicon technology platform, and fabrication process 有权
    集成混合激光源兼容硅技术平台及制作工艺

    公开(公告)号：US09461441B2

    公开(公告)日：2016-10-04

    申请号：US14945859

    申请日：2015-11-19

    Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

    Inventor： Alain Chantre ,  Charles Baudot ,  Sébastien Cremer

    IPC: H01S5/00 ,  H01S5/026 ,  H01S5/125 ,  H01S5/22 ,  H01S5/02 ,  H01S5/065

    CPC classification number: H01S5/026 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/136 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/0268 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0656 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2206

    Abstract: A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.

    Abstract translation: 光子集成电路包括封装至少一个金属化水平的第一绝缘区域，至少部分地封装激光源的增益介质的第二绝缘区域和放置在两个绝缘区域之间的层叠结构。 层叠结构包括第一多晶或单晶硅层，第二多晶或单晶硅层，与激光源的波长光学兼容并且可相对于硅选择性地蚀刻的中间层，并且将第一层与 所述第二层的第一部分和所述增益介质面向所述第一层的至少一部分。 第一层，中间层和第二层的第一部分形成包含谐振腔和波导的组件，光学耦合到增益介质，第二层的第二部分包含至少一个其他光子 零件。

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