公开(公告)号：US10393958B2

公开(公告)日：2019-08-27

申请号：US16029365

申请日：2018-07-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frédéric Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  H01L23/48 ,  H01L23/00 ,  H01L21/768 ,  H02S40/44 ,  H01L25/04

Abstract: A method for making an electro-optic device includes forming a first photonic device having a first material in a first photonic layer over a substrate layer. A second photonic layer with a second photonic device is formed over the first photonic layer and includes a second material different than the first material. A dielectric layer is formed over the second photonic layer. A first electrically conductive via extending through the dielectric layer and the second photonic layer is formed so as to couple to the first photonic device. A second electrically conductive via extending through the dielectric layer and coupling to the second photonic device is formed. A third electrically conductive via extending through the dielectric layer, the second photonic layer, and the first photonic layer is formed so as to couple to the substrate layer.

公开(公告)号：US10274395B2

公开(公告)日：2019-04-30

申请号：US15694156

申请日：2017-09-01

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMICROELECTRONICS SA

Inventor： Jean-Francois Carpentier ,  Patrick Le Maitre ,  Jean-Robert Manouvrier ,  Charles Baudot ,  Bertrand Borot

IPC: G01M11/02 ,  G02B6/28 ,  G02B6/34 ,  G02B6/12 ,  G01R31/265 ,  G01R31/27 ,  G01R31/28 ,  G01R31/303 ,  G01R31/311 ,  G01R31/317 ,  G01R35/00 ,  G02B6/00 ,  G01M11/00

Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.

公开(公告)号：US20190049664A1

公开(公告)日：2019-02-14

申请号：US16156601

申请日：2018-10-10

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Boeuf ,  Charles Baudot

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/126 ,  G02B6/27

Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.

公开(公告)号：US09933576B2

公开(公告)日：2018-04-03

申请号：US14982302

申请日：2015-12-29

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles Baudot

IPC: G02B6/34 ,  G02B6/30 ,  G02B6/124 ,  G02B5/18 ,  G02B6/12

CPC classification number: G02B6/34 ,  G02B5/1857 ,  G02B5/1866 ,  G02B6/124 ,  G02B6/30 ,  G02B2006/12061

Abstract: An electro-optic device may include a photonic chip including an insulator layer, and a semiconductor layer over the insulator layer and defining an optical grating coupler. The optical grating coupler may have a series of alternating curved ridges and valleys. The optical grating coupler has first and second sides and a medial portion. The medial portion has a medial grating period T based upon a targeting wavelength. One or more of the first and second sides have a side grating period different than T.

公开(公告)号：US09778415B2

公开(公告)日：2017-10-03

申请号：US15352127

申请日：2016-11-15

Applicant: STMICROELECTRONICS (CROLLES 2) SAS ,  STMICROELECTRONICS S.R.L.

Inventor： Antonio Fincato ,  Charles Baudot

IPC: H04J14/00 ,  G02B6/12 ,  G02B6/293 ,  G02F1/01 ,  H04J14/02

CPC classification number: G02B6/12033 ,  G02B6/12011 ,  G02B6/12014 ,  G02B6/12016 ,  G02B6/12026 ,  G02B6/29307 ,  G02B6/2938 ,  G02F1/011 ,  G02F1/0115 ,  G02F2201/58 ,  G02F2203/50 ,  H04J14/02

Abstract: An arrayed waveguide grating multiplexer/demultiplexer includes an array of optical waveguides ordered in sequence from a shortest waveguide up to a longest waveguide, and identical phase shifters configured to be controlled by a same control signal. Each phase shifter increases/decreases an optical path of an optical waveguide by the same quantity based on the control control signal.

公开(公告)号：US09461441B2

公开(公告)日：2016-10-04

申请号：US14945859

申请日：2015-11-19

Applicant: STMICROELECTRONICS SA ,  STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Alain Chantre ,  Charles Baudot ,  Sébastien Cremer

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/125 ,  H01S5/22 ,  H01S5/02 ,  H01S5/065

CPC classification number: H01S5/026 ,  G02B6/12004 ,  G02B6/1225 ,  G02B6/132 ,  G02B6/136 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/0268 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0656 ,  H01S5/1032 ,  H01S5/1035 ,  H01S5/125 ,  H01S5/22 ,  H01S5/2206

Abstract: A photonic integrated circuit includes a first insulating region encapsulating at least one metallization level, a second insulating region at least partially encapsulating a gain medium of a laser source, and a stacked structure placed between the two insulating regions. The stacked structure includes a first polycrystalline or single-crystal silicon layer, a second polycrystalline or single-crystal silicon layer, an intermediate layer optically compatible with the wavelength of the laser source and selectively etchable relative to silicon and that separates the first layer from a first portion of the second layer, and the gain medium facing at least one portion of the first layer. The first layer, the intermediate layer, and the first portion of the second layer form an assembly containing a resonant cavity and a waveguide, which are optically coupled to the gain medium, and a second portion of the second layer containing at least one other photonic component.

Abstract translation: 光子集成电路包括封装至少一个金属化水平的第一绝缘区域，至少部分地封装激光源的增益介质的第二绝缘区域和放置在两个绝缘区域之间的层叠结构。 层叠结构包括第一多晶或单晶硅层，第二多晶或单晶硅层，与激光源的波长光学兼容并且可相对于硅选择性地蚀刻的中间层，并且将第一层与 所述第二层的第一部分和所述增益介质面向所述第一层的至少一部分。 第一层，中间层和第二层的第一部分形成包含谐振腔和波导的组件，光学耦合到增益介质，第二层的第二部分包含至少一个其他光子 零件。

公开(公告)号：US09354396B2

公开(公告)日：2016-05-31

申请号：US14643662

申请日：2015-03-10

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Charles Baudot

IPC: G02B6/28 ,  G02B6/34 ,  G02B6/125 ,  G02B6/122 ,  G02B6/43 ,  G02B6/12

CPC classification number: G02B6/2813 ,  G02B6/12007 ,  G02B6/122 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/2835 ,  G02B6/34 ,  G02B6/43 ,  G02B2006/12097 ,  G02B2006/12154 ,  G02B2006/12159 ,  Y10T29/49826

Abstract: A multi-mode interference device may include a body having an optical axis and configured to generate a stationary optical interference pattern from an incoming optical wave. The body may include ribs being parallel to the optical axis and being spaced apart to define a pitch and cause an optical coupling between the ribs.

Abstract translation: 多模干涉装置可以包括具有光轴并被配置为从入射光波产生固定光学干涉图案的主体。 主体可以包括平行于光轴并且间隔开以限定间距并且引起肋之间的光学联接的肋。