Three-dimensional semiconductor memory device

    公开(公告)号:US10651195B2

    公开(公告)日:2020-05-12

    申请号:US16168219

    申请日:2018-10-23

    Abstract: A three-dimensional semiconductor memory device includes an electrode structure including gate electrodes and insulating layers, which are alternately stacked on a substrate, a semiconductor pattern extending in a first direction substantially perpendicular to a top surface of the substrate and penetrating the electrode structure, a tunnel insulating layer disposed between the semiconductor pattern and the electrode structure, a blocking insulating layer disposed between the tunnel insulating layer and the electrode structure, and a charge storing layer disposed between the blocking insulating layer and the tunnel insulating layer. The charge storing layer includes a plurality of first charge trap layers having a first energy band gap, and a second charge trap layer having a second energy band gap larger than the first energy band gap. The first charge trap layers are embedded in the second charge trap layer between the gate electrodes and the semiconductor pattern.

    COOKING DEVICE
    42.
    发明申请
    COOKING DEVICE 审中-公开

    公开(公告)号:US20180153004A1

    公开(公告)日:2018-05-31

    申请号:US15577297

    申请日:2016-05-18

    Abstract: Disclosed is a cooking appliance with an improved structure to increase visibility to get a better look at the inside of a cooking room during cooking while blocking electromagnetic waves generated in the cooking room from leaking out. The cooking appliance includes a main body configured to have having a cooking room and a door arranged on the front of the main body to open or and close the cooking room. The door includes a door frame configured to have an opening formed to see into the cooking room and a conductive border portion around the opening; a shielding member arranged to cover the opening and having a conductive blocking layer configured to block electromagnetic waves; and a fixing member arranged to combine the door frame and the shielding member.

    Semiconductor light emitting devices
    44.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号:US09431578B2

    公开(公告)日:2016-08-30

    申请号:US14152128

    申请日:2014-01-10

    CPC classification number: H01L33/382

    Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

    Abstract translation: 在一个示例性实施例中,半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极,第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

    Semiconductor light emitting device and method of manufacturing the same
    45.
    发明授权
    Semiconductor light emitting device and method of manufacturing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US09236304B2

    公开(公告)日:2016-01-12

    申请号:US14150713

    申请日:2014-01-08

    Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.

    Abstract translation: 一种制造半导体发光器件的方法包括在衬底上形成多个半导体发光器件,所述半导体发光器件具有形成在其上表面上的至少一个电极焊盘; 通过在每个半导体发光器件的电极焊盘上形成凸起芯,形成一个导电凸块,并形成一个包围凸块的反射凸块; 在所述多个半导体发光器件上形成含有荧光体的树脂封装部,以包围所述导电凸块; 抛光树脂封装部分以将导电凸块的凸起芯露出到树脂封装部分的上表面; 以及通过在半导体发光器件之间切割树脂封装部分来形成单独的半导体发光器件。

    Manufacturing a semiconductor light emitting device using a trench and support substrate
    46.
    发明授权
    Manufacturing a semiconductor light emitting device using a trench and support substrate 有权
    制造使用沟槽和支撑衬底的半导体发光器件

    公开(公告)号:US08828761B2

    公开(公告)日:2014-09-09

    申请号:US13801903

    申请日:2013-03-13

    CPC classification number: H01L33/005 H01L33/0079 H01L33/0095 H01L33/60

    Abstract: A method for manufacturing a semiconductor light emitting device, includes: forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a growth substrate. A trench is formed in a portion to divide the light emitting structure into individual light emitting structures. The trench has a depth such that the growth substrate is not exposed. A support substrate is provided on the light emitting structure. The growth substrate is separated from the light emitting structure. The light emitting structure is cut into individual semiconductor light emitting devices.

    Abstract translation: 一种制造半导体发光器件的方法,包括:在生长衬底上形成具有第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 在一部分中形成沟槽,以将发光结构分成单独的发光结构。 沟槽具有使得生长衬底不暴露的深度。 在发光结构上设置有支撑基板。 生长衬底与发光结构分离。 将发光结构切割成单独的半导体发光器件。

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