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    Method for Manufacturing Light-Emitting Element and Deposition Apparatus
    41.
    发明申请
    Method for Manufacturing Light-Emitting Element and Deposition Apparatus 有权
    制造发光元件和沉积设备的方法

    公开(公告)号：US20130295275A1

    公开(公告)日：2013-11-07

    申请号：US13870246

    申请日：2013-04-25

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kohei Yokoyama ,  Hisao Ikeda ,  Shinichi Hirasa ,  Yasuhiro Jinbo ,  Natsuko Takase

    IPC: H05B33/10

    CPC classification number: C23C14/24 ,  A63F13/327 ,  C23C14/54 ,  C23C14/564 ,  F21S6/002 ,  F21Y2115/20 ,  H01J49/004 ,  H01J49/42 ,  H01L51/001 ,  H01L51/56 ,  H05B33/10

    Abstract: In order to provide a highly reliable organic EL element, a first step in which a deposition material is heated and vaporized in a deposition chamber in which the pressure is reduced and a second step in which a layer included in an EL layer is deposited in the deposition chamber are performed while exhaustion is performed and the partial pressure of water in the deposition chamber is measured with a mass spectrometer. Alternatively, the deposition chamber in the deposition apparatus includes a deposition material chamber and is connected to an exhaust mechanism. The deposition material chamber is separated from the deposition chamber by a sluice valve, includes a deposition material holding portion including a heating mechanism, and is connected to a mass spectrometer and an exhaust mechanism.

    Abstract translation: 为了提供高可靠性的有机EL元件，在沉积材料在压力降低的沉积室中被加热和蒸发的第一步骤和其中包含在EL层中的层沉积在第二步骤中的第二步骤 在进行耗尽的同时进行沉积室，并且用质谱仪测量沉积室中的水分压。 或者，沉积设备中的沉积室包括沉积材料室并连接到排气机构。 沉积材料室通过闸阀与沉积室分离，包括具有加热机构的沉积材料保持部分，并连接到质谱仪和排气机构。

    Method for manufacturing semiconductor device
    42.
    发明授权
    Method for manufacturing semiconductor device 有权

    公开(公告)号：US12094979B2

    公开(公告)日：2024-09-17

    申请号：US17285401

    申请日：2019-10-17

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yasuhiro Jinbo ,  Jun Ishikawa ,  Sachiaki Tezuka ,  Tetsuya Kakehata

    IPC: H01L29/00 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/76826 ,  H01L29/66742

    Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

    Transistor and display device
    43.
    发明授权
    Transistor and display device 有权

    公开(公告)号：US12009432B2

    公开(公告)日：2024-06-11

    申请号：US17679413

    申请日：2022-02-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hitoshi Kunitake ,  Yasuhiro Jinbo ,  Naoki Okuno ,  Masahiro Takahashi ,  Tomonori Nakayama

    IPC: H01L29/786 ,  G09G3/32

    CPC classification number: H01L29/78603 ,  G09G3/32 ,  H01L29/78681 ,  G09G2300/0426

    Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

    Display Device, Display Module, Electronic Device, And Method For Manufacturing Display Device
    44.
    发明申请
    Display Device, Display Module, Electronic Device, And Method For Manufacturing Display Device 有权

    公开(公告)号：US20230120875A1

    公开(公告)日：2023-04-20

    申请号：US17963585

    申请日：2022-10-11

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Ryota Hodo ,  Yasuhiro Jinbo

    IPC: H01L51/52 ,  H01L51/56

    Abstract: A highly reliable display device is provided. The display device includes a pixel electrode including first to fourth conductive layers, and an EL layer including a functional layer and a light-emitting layer. The second to fourth conductive layers are stacked in this order and provided to cover the first conductive layer. The functional layer includes a region that covers the second to fourth conductive layers and is in contact with the fourth conductive layer. The light-emitting layer is provided over the functional layer. The side surface of the first conductive layer has a tapered shape with a taper angle less than 90° in the cross section. The second to fourth conductive layers each include a tapered portion in a region overlapping the side surface of the first conductive layer. The visible light reflectance of the third conductive layer is higher than that of the first, second, and fourth conductive layers.

    Display device
    48.
    发明授权
    Display device 有权

    公开(公告)号：US10304919B2

    公开(公告)日：2019-05-28

    申请号：US15966640

    申请日：2018-04-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yasuhiro Jinbo ,  Kohei Yokoyama ,  Yuki Tamatsukuri ,  Naoto Goto ,  Masami Jintyou ,  Masayoshi Dobashi ,  Masataka Nakada ,  Akihiro Chida ,  Naoyuki Senda

    IPC: H01L27/32 ,  H01L51/52

    Abstract: To provide a display device with a manufacturing yield and/or a display device with suppressed mixture of colors between adjacent pixels. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, and an adhesive layer. The first insulating layer includes a first opening. The second insulating layer includes a second opening. The first opening and the second opening are provided between the first pixel electrode and the second pixel electrode. In a top view, a periphery of the second opening is positioned on an inner side than a periphery of the first opening. The adhesive layer has a region overlapping with the second insulating layer below the second insulating layer.

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