公开(公告)号：US07879399B2

公开(公告)日：2011-02-01

申请号：US12193370

申请日：2008-08-18

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US20090250006A1

公开(公告)日：2009-10-08

申请号：US12067714

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： C23C16/54

CPC分类号： C23C16/4481

摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.

摘要翻译： 将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元， 放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料 设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华 在第二边。

公开(公告)号：US20090117270A1

公开(公告)日：2009-05-07

申请号：US12088153

申请日：2006-07-25

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Yumiko Kawano

IPC分类号： C23C16/02

CPC分类号： C23C16/0227 ,  C23C16/16 ,  C23C16/34 ,  C23C16/4405

摘要： A method for processing a substrate includes a film forming step of supplying a film forming gas into the processing chamber to form a film on the substrate, a cleaning step of supplying a plasma-exited cleaning gas into the processing chamber after the film forming step to clean the inside of the processing chamber, and a coating step of forming a coating within the processing chamber after the cleaning step. The cleaning step includes a high pressure cleaning of regulating the pressure in the processing chamber so that cleaning is mainly performed by molecules formed by recombining radicals in the cleaning gas, and the coating step includes a low temperature film forming step of forming the coating film under the condition that the temperature of a substrate supporting table is set lower than that in the film formation on the substrate during the film formation step.

摘要翻译： 一种处理基板的方法包括：将成膜气体供给到处理室中以在基板上形成膜的成膜步骤，在成膜步骤之后将等离子体排出的清洗气体供给到处理室中的清洗步骤， 清洁处理室的内部，以及在清洁步骤之后在处理室内形成涂层的涂布步骤。 清洗步骤包括调节处理室中的压力的​​高压清洗，使得清洗主要由通过在清洁气体中重新组合形成的分子进行，并且涂布步骤包括在下面形成涂膜的低温成膜步骤 在成膜步骤中将基板支撑台的温度设定为低于基板上的成膜的条件。

公开(公告)号：US07456109B2

公开(公告)日：2008-11-25

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： H01L21/302

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US07427426B2

公开(公告)日：2008-09-23

申请号：US11119906

申请日：2005-05-03

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/16

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US07344754B2

公开(公告)日：2008-03-18

申请号：US11155575

申请日：2005-06-20

申请人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Tatsuo Hatano ,  Yumiko Kawano

IPC分类号： C23C16/00 ,  B05D3/00

CPC分类号： C23C16/455 ,  C23C16/16 ,  H01L21/28556

摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.

摘要翻译： 公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。 执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

公开(公告)号：US07067422B2

公开(公告)日：2006-06-27

申请号：US10830804

申请日：2004-03-31

申请人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

发明人： Kazuhito Nakamura ,  Hideaki Yamasaki ,  Yumiko Kawano ,  Gert J. Leusink ,  Fenton R. McFeely ,  John J. Yurkas ,  Vijay Narayanan

IPC分类号： H01L21/44

CPC分类号： H01L21/28088 ,  H01L21/28194 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/517

摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.

摘要翻译： 一种通过在处理室中提供具有高k电介质层的衬底并在热化学气相沉积工艺中在高k电介质层上形成含钽层的方法来形成含钽栅电极结构的方法， 将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体， （CH 3）2））前体气体。 在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。 在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。 还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

公开(公告)号：US20060124151A1

公开(公告)日：2006-06-15

申请号：US10536322

申请日：2003-11-14

申请人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Kazuhito Nakamura ,  Koumei Matsuzawa ,  Tsukasa Matsuda ,  Yumiko Kawano

IPC分类号： B08B6/00

CPC分类号： C23C16/4405 ,  H01J37/32357 ,  H01J37/32862

摘要： A cleaning method of a substrate processor that reduces damage to a member in a substrate processing container. The method of cleaning the substrate processing container of the substrate processor that processes a target substrate according to the present invention includes: introducing gas into a remote plasma generating unit of the substrate processor; exciting the gas by the remote plasma generating unit, and generating reactive species; and supplying the reactive species to the processing container from the remote plasma generating unit, and pressurizing the processing container at 1333 Pa or greater.

摘要翻译： 一种基板处理器的清洁方法，其减少对基板处理容器中的部件的损坏。 根据本发明的清理处理目标衬底的衬底处理器的衬底处理容器的方法包括：将气体引入到衬底处理器的远程等离子体产生单元中; 通过远程等离子体发生单元激发气体，并产生反应物种; 并从远程等离子体发生单元向处理容器提供反应物质，并且在1333Pa或更大压力下加压处理容器。

公开(公告)号：US20050196534A1

公开(公告)日：2005-09-08

申请号：US11119906

申请日：2005-05-03

申请人： Tatsuo Hatano ,  Hideaki Yamasaki

发明人： Tatsuo Hatano ,  Hideaki Yamasaki

IPC分类号： C23C16/00 ,  C23C16/16 ,  C23C16/44

CPC分类号： C23C16/16 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45553

摘要： A CVD method for forming a metal film on a substrate by using a metal carbonyl gas includes a preparing step for setting a vacuum chamber at a vacuum pressure and heating the substrate in the vacuum chamber to a first temperature where the metal carbonyl gas is decomposed. Also included are a supplying step for supplying the metal carbonyl gas into the vacuum chamber while exhausting the vacuum chamber with a first vacuum pumping speed and a removing step for removing a decomposed gas of the metal carbonyl gas by stopping supplying of the metal carbonyl gas and quickly exhausting the vacuum chamber with a second vacuum pumping speed sufficiently higher than the first vacuum pumping speed. The supplying step and the removing step can be repeatedly as desired.

摘要翻译： 通过使用金属羰基气体在基板上形成金属膜的CVD方法包括将真空室设置在真空压力下并将真空室内的基板加热到金属羰基气体分解的第一温度的准备工序。 还包括供给步骤，用于将金属羰基气体供给到真空室中，同时以第一真空泵送速度排出真空室，以及通过停止供应羰基金属气体来除去金属羰基气体的分解气体的去除步骤;以及 以足够高于第一真空泵送速度的第二真空泵送速度快速排出真空室。 可以根据需要反复进行供给步骤和去除步骤。

公开(公告)号：US06846711B2

公开(公告)日：2005-01-25

申请号：US09794046

申请日：2001-02-28

申请人： Hideaki Yamasaki ,  Yumiko Kawano

发明人： Hideaki Yamasaki ,  Yumiko Kawano

IPC分类号： H01L27/108 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242

CPC分类号： H01L21/7687 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L27/10855 ,  H01L28/55 ,  H01L28/60 ,  H01L28/75 ,  H01L28/90

摘要： A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.

摘要翻译： 半导体器件包括层间绝缘膜，接触插塞，阻挡膜，第一电极，电容器绝缘件和第二电极。 层间绝缘膜形成在半导体基板上。 接触插塞延伸穿过层间绝缘膜，并由导电材料形成。 阻挡膜由接触塞的上表面上的钨基材料形成。 第一电极通过阻挡膜连接到接触塞，并由层间绝缘膜上的金属材料形成。 电容绝缘膜由第一电极上的绝缘金属氧化物形成。 第二电极被电容器绝缘膜绝缘并形成在第一电极的表面上。