公开(公告)号：US5547787A

公开(公告)日：1996-08-20

申请号：US49788

申请日：1993-04-21

申请人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

发明人： Shinichi Ito ,  Haruo Okano ,  Toru Watanabe ,  Katsuya Okumura

IPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/32 ,  G03F9/00

CPC分类号： G03F1/32 ,  G03F1/26

摘要： An exposure mask having an excellent alignment accuracy between patterns, which is prepared by first forming on a light transmissive substrate a light shielding film or a semi-transparent film pattern (first pattern) somewhat larger than a desired dimension, forming thereon a semi-transparent film or a light transmissive film pattern (second pattern) so as to include all patterns of the desired dimensions made up of a light shielding part, a semi-transparent part and a light transmissive part, and then removing a projected part of the first pattern with use of the second pattern as a mask.The semi-transparent film is formed of at least two layers each of which contains a common element, thus the semi-transparent film can be made with use of the same apparatus and when patterning, etching process can be carried out with use of the same etchant.Further, since in a mask including the semi-transparent pattern, at least that area of non-pattern zone where light reaches a wafer through the transfer, acts to shield the exposure light, too narrowed pattern or insufficient focal depth can be prevented.

摘要翻译： 通过首先在透光性基板上形成稍大于所需尺寸的遮光膜或半透明膜图案（第一图案）而制成的图案之间具有优异的取向精度的曝光掩模，在其上形成半透明 膜或透光膜图案（第二图案），以便包括由遮光部分，半透明部分和透光部分组成的所需尺寸的所有图案，然后去除第一图案的突出部分 使用第二种图案作为掩模。 半透明膜由至少两层形成，每层均含有共同的元素，因此可以使用相同的装置制造半透明膜，并且当图案化时，可以使用它们进行蚀刻工艺 蚀刻剂 此外，由于在包括半透明图案的掩模中，至少通过转印光到达晶片的非图案区域的区域起着屏蔽曝光光的作用，可以防止太窄的图案或不足的焦深。

公开(公告)号：US5538815A

公开(公告)日：1996-07-23

申请号：US120386

申请日：1993-09-14

申请人： Kazuko Oi ,  Shigehiro Hara ,  Kiyomi Koyama ,  Koji Hashimoto ,  Shinichi Ito ,  Katsuya Okumura

发明人： Kazuko Oi ,  Shigehiro Hara ,  Kiyomi Koyama ,  Koji Hashimoto ,  Shinichi Ito ,  Katsuya Okumura

IPC分类号： G03F1/28 ,  G03F9/00

CPC分类号： G03F1/28

摘要： A method for designing a phase-shifting mask in a manner that a phase shifter of the mask is arranged so that a phase difference between light transmitted through clear areas with the phase shifter and light transmitted through clear areas without the phase shifter is set to 180.degree. or further different combination of phase differences being such as 0.degree., 90.degree. and 270.degree.. The method includes the steps of: defining a threshold value in a manner that the threshold value falls within a range which is possible to resolve using the phase-shifting masks; measuring a distance between neighboring shapes of the clear area; storing adjacent relationship of the neighboring shapes whose distance is less than the threshold; and automatically placing the phase shifter on one of the neighboring shapes of the clear areas in a manner that mutually neighboring clear area have an opposite phase to each other.

摘要翻译： 一种用于以掩模的移相器的方式设计移相掩模的方法，使得透过透过区域的光与移相器之间的相位差和透过透明区域而没有移相器的光被设置为180° DEG或相差的其他不同组合如0°，90°和270°。 该方法包括以下步骤：以阈值落在可以使用相移掩模解析的范围内的方式定义阈值; 测量透明区域的相邻形状之间的距离; 存储距离小于阈值的相邻形状的相邻关系; 并且以相互相邻的清除区域彼此具有相反的相位的方式自动地将移相器放置在透明区域的相邻形状中的一个上。

公开(公告)号：US07541136B2

公开(公告)日：2009-06-02

申请号：US11472452

申请日：2006-06-22

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G03C5/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

摘要翻译： 公开了一种掩模，其包括：第一区域，包括第一周围区域，在透明基板上设置有半色调相移膜或半色调相移膜的叠层膜和不透明膜;以及第一开口区域， 以及第二区域，其包括在透明基板上设置半色调相移膜的第二周围区域和由第二周围区域围绕的第二开口区域，其中在至少一部分中设置透明膜 第二开口区域，所述透明膜被配置为相对于穿过所述第二周围区域的曝光光而通过其中设置有所述透明膜的所述第二开口区域的那部分的曝光而给予预定的相位差。

公开(公告)号：US20060240341A1

公开(公告)日：2006-10-26

申请号：US11472452

申请日：2006-06-22

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

公开(公告)号：US07371483B2

公开(公告)日：2008-05-13

申请号：US10830399

申请日：2004-04-23

申请人： Shingo Kanamitsu ,  Takashi Hirano ,  Kyoko Izuha ,  Soichi Inoue ,  Shinichi Ito

发明人： Shingo Kanamitsu ,  Takashi Hirano ,  Kyoko Izuha ,  Soichi Inoue ,  Shinichi Ito

IPC分类号： G03F9/00

CPC分类号： G03F1/32 ,  G03F1/44 ,  Y10S430/143

摘要： Disclosed is a method for manufacturing a mask for focus monitoring, comprising forming a first opening portion and a second opening portion in a surface region of a transparent substrate, the second opening portion having a pattern shape corresponding to a pattern shape of the first opening portion, and being surrounded by a stack film formed of a halftone film on the transparent substrate and an opaque film on the halftone film, and radiating a charged beam onto a first region which includes an edge of the second opening portion and inside and outside regions which are respectively located inward and outward of the edge of the second opening portion, to etch that part of the transparent substrate which corresponds to the inside region.

摘要翻译： 本发明公开了一种制造用于聚焦监测的掩模的方法，包括在透明基板的表面区域中形成第一开口部分和第二开口部分，所述第二开口部分具有与第一开口部分的图案形状对应的图案形状 并且被由透明基板上的半色调膜形成的叠层膜和半色调膜上的不透明膜包围，并且将带电束辐射到包括第二开口部分的边缘和内部和外部区域的第一区域上， 分别位于第二开口部分的边缘的内侧和外侧，以蚀刻对应于内部区域的透明基板的那部分。

公开(公告)号：US06251544B1

公开(公告)日：2001-06-26

申请号：US09334941

申请日：1999-06-17

申请人： Soichi Inoue ,  Shinichi Ito ,  Kei Hayasaki

发明人： Soichi Inoue ,  Shinichi Ito ,  Kei Hayasaki

IPC分类号： G03F900

CPC分类号： G03F7/70558 ,  G03F1/44

摘要： In an exposure dose measuring method for measuring an effective exposure dose on a wafer by printing mask patterns formed on a mask onto a resist coated on the wafer by exposure, each of the mask patterns has light transmitting sections and light shielding sections repeated in a period p, a ratio of areas of the light transmitting sections to areas of the light shielding sections of each of the mask patterns differs from ratios of those of the others of the mask patterns, and the period p is set so as to satisfy a relationship of p/M≦&lgr;/(1+&sgr;)NA, where an exposure light wavelength at the time of exposing the mask patterns is &lgr;, a numerical aperture at a wafer side is NA, an illumination coherence factor is &sgr;, and a mask pattern magnification for patterns to be formed on the wafer is M.

摘要翻译： 在曝光剂量测量方法中，通过将掩模上形成的掩模图案通过曝光印刷在涂覆在晶片上的抗蚀剂上来测量晶片上的有效曝光剂量，每个掩模图案具有在一段时间内重复的透光部分和遮光部分 p，光透射部分的面积与每个掩模图案的遮光部分的面积的比率与其他掩模图案的比率的比率不同，并且周期p被设定为满足其中的关系 曝光掩模图案时的曝光光波长为羔羊，晶圆侧的数值孔径为NA，照度相干系数为西格玛，在晶片上形成的图案的掩模图案放大率为M.

公开(公告)号：US07094504B2

公开(公告)日：2006-08-22

申请号：US10668245

申请日：2003-09-24

申请人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

发明人： Kyoko Izuha ,  Hideki Kanai ,  Soichi Inoue ,  Shingo Kanamitsu ,  Shinichi Ito

IPC分类号： G01F9/00

CPC分类号： G03F1/30 ,  G03F1/32 ,  G03F7/70641 ,  G03F7/70683

摘要： Disclosed is a mask comprising a first area including a first surrounding area in which a halftone phase shift film or a stacked film of a halftone phase shift film and an opaque film is provided on a transparent substrate, and a first opening area surrounded by the first surrounding area, and a second area including a second surrounding area in which a halftone phase shift film is provided on the transparent substrate and a second opening area surrounded by the second surrounding area, wherein a transparent film is provided in at least a part of the second opening area, the transparent film being configured to give a predetermined phase difference to exposure light passing through that part of the second opening area in which the transparent film is provided relative to exposure light passing through the second surrounding area.

公开(公告)号：US07662546B2

公开(公告)日：2010-02-16

申请号：US11304549

申请日：2005-12-16

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： H05B3/68

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

摘要翻译： 用涂膜处理的基板的加热装置具有内部空间的室，在内部空间中加热被处理基板的加热板和分隔构件。 加热板具有支撑表面，该支撑表面支撑在腔室内待处理的基底。 分隔构件布置在腔室中以面向支撑表面。 分隔构件将内部空间分隔成第一和第二空间，并且具有允许第一和第二空间彼此连通的多个孔。 加热板的支撑表面设置在第一空间中。 形成空气流的气流形成机构设置在第二空间中。 该机理将从光致抗蚀剂膜蒸发的物质排出。

公开(公告)号：US20080050677A1

公开(公告)日：2008-02-28

申请号：US11905976

申请日：2007-10-05

申请人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

发明人： Tomoyuki Takeishi ,  Kenji Kawano ,  Hiroshi Ikegami ,  Shinichi Ito ,  Riichiro Takahashi

IPC分类号： G03C5/00

CPC分类号： H01L23/544 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  G03F7/2026 ,  G03F7/70341 ,  G03F9/7076 ,  G03F9/708 ,  G03F9/7084 ,  G21K5/10 ,  H01J2237/30438 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/949 ,  H01L2924/00

摘要： A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

摘要翻译： 一种处理方法，用于在形成在基板上的膜中选择性地减少或去除待曝光的区域，该方法包括相对地扫描基板上的形状比整个第一区域要暴露的整个第一区域的第一曝光灯 区域，以选择性地去除或减少要暴露的第一区域，并且用第二曝光光将待暴露的整个第一区域暴露在整个第一区域内的整个第二区域，以选择性地暴露待暴露的整个第二区域。

公开(公告)号：US07009148B2

公开(公告)日：2006-03-07

申请号：US10682419

申请日：2003-10-10

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： F27B5/14

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大的抗蚀剂膜，将能量束照射到化学放大的抗蚀剂膜上以在其中形成潜像，对化学放大的抗蚀剂膜进行热处理，加热处理为 以相对移动加热部分的方式进行加热，该加热部分用于加热化学放大的抗蚀剂膜和形成在加热部分的下表面和化学放大型抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流 。