摘要:
A duplexer includes: first and second filters including film bulk acoustic resonators (FBARs) arranged in a ladder form; first and second integrated-passive devices (IPDs) provided between a common terminal and the first and second filters; and a substrate on which the first and second filters and the first and second IPDs are mounted. The substrate includes conductive patterns that realize inductances connected between the first and second filters and ground. The first and second IPDs includes inductors connected to the first and second filters.
摘要:
The filter includes one or more series resonators and one or more parallel resonators. An inductance is connected in series to at least a parallel resonator of the parallel resonators, and a antiresonance frequency of the parallel resonator to which the inductance is connected in series is equal to or higher than that of the series resonators. The duplexer, the communication module and the communication device are provided with the filter.
摘要:
An acoustic wave device includes: a substrate; a lower electrode formed on the substrate; at least two piezoelectric films formed on the lower electrode; an insulating film located between the at least two piezoelectric films; and an upper electrode formed on the at least two piezoelectric films, wherein an outer periphery of an uppermost piezoelectric film out of the at least two piezoelectric films in a region in which the lower electrode and the upper electrode face each other is positioned further in than an outer periphery of the upper electrode.
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1
摘要:
A piezoelectric thin-film resonator includes a substrate, a lower electrode arranged on the substrate, a piezoelectric film arranged on the lower electrode, and an upper electrode arranged on the piezoelectric film. A region in which the upper electrode overlaps with the lower electrode through the piezoelectric film has an elliptical shape, and a condition such that 1
摘要:
An acoustic wave device including: a substrate; a piezoelectric film formed on the substrate; an lower electrode provided on a first surface of the piezoelectric film; an upper electrode provided on a second surface of the piezoelectric film opposite to the first surface; and a mass loading film having a first pattern and a second pattern in a resonance portion in which the lower electrode and the upper electrode face each other through the piezoelectric film, the first pattern having portions and the second pattern having portions interlinking the portions of the first pattern.
摘要:
An acoustic wave device includes: a first piezoelectric thin film resonator including a first lower electrode, a first upper electrode and a first piezoelectric film sandwiched between the first lower and upper electrodes; a decoupler film provided on the first upper electrode; and a second piezoelectric thin film resonator provided on the decoupler film and including a second lower electrode, a second upper electrode and a second piezoelectric film sandwiched between the second lower and upper electrodes, wherein the first piezoelectric film and the second piezoelectric film comprise aluminum nitride and include an element increasing a piezoelectric constant of the aluminum nitride.
摘要:
A thin-film piezo-resonator includes a silicon substrate and a resonator assembly. The substrate is formed with a cavity or through-hole which is opened in the upper and the lower surfaces of the substrate. The resonator assembly, disposed at a location corresponding to the cavity, is composed of a first electrode contacting the upper surface of the substrate, a piezoelectric layer formed on the first electrode and a second electrode formed on the piezoelectric layer. The cavity has a side surface extending in a substantially perpendicular direction to the first surface.
摘要:
A filter device includes a filter element that has piezoelectric thin-film resonators arranged in series arms and parallel arms, and a package that houses the filter element in a face-down state. In this filter device, the filter element and the package are electrically connected to each other through bumps. The package includes first pad parts on which the bumps are placed, and transmission paths that electrically connect the first pad parts to the outside. The filter element includes second pad parts that are electrically connected to the first pad parts through the bumps, and wiring parts that electrically connect the second pads to the piezoelectric thin-film resonators and electrically connect the piezoelectric thin-film resonators to one another. In this structure, inductances formed with the transmission paths are connected in series to the piezoelectric thin-film resonators.