公开(公告)号：US20110114600A1

公开(公告)日：2011-05-19

申请号：US12997183

申请日：2009-06-03

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/08 ,  C23C16/50 ,  C23C16/455 ,  C23F1/00

CPC分类号： H05H1/46 ,  C03C17/002 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229

摘要： Provided is a coaxial waveguide distributor including a coaxial waveguide which extends non-perpendicularly at a branched portion. A plasma processing apparatus in which a gas is excited by microwaves to plasma process an object to be processed includes a processing container, a microwave source which outputs microwaves, a transmission line which transmits the microwaves output from the microwave source, a plurality of dielectric plates which are provided on an inner wall of the processing container and emit microwaves into the processing container, a plurality of first coaxial waveguides which are adjacent to the plurality of dielectric plates and transmit microwaves to the plurality of dielectric plates, and one stage or two or more stages of a coaxial waveguide distributor which distributes and transmits the microwaves transmitted through the transmission line to the plurality of first coaxial waveguides. The coaxial waveguide distributor include s a second coaxial waveguide having an input portion and three or more of third coaxial waveguides which are connected to the second coaxial waveguide. Each of the third coaxial waveguides extends non-perpendicularly with respect to the second cable.

摘要翻译： 提供了一种同轴波导分配器，其包括在分支部分处非垂直延伸的同轴波导。 其中气体被微波激发以等离子体处理被处理物体的等离子体处理装置包括处理容器，输出微波的微波源，将微波源输出的微波传输的传输线，多个电介质板 它们设置在处理容器的内壁上并向处理容器发射微波;多个第一同轴波导，其与多个电介质板相邻并且将微波传输到多个电介质板，以及一个或两个或两个 更多级的同轴波导分配器，其将通过传输线传输的微波分布并传输到多个第一同轴波导。 同轴波导分配器包括具有连接到第二同轴波导的输入部分和三个或更多个第三同轴波导的第二同轴波导。 第三同轴波导中的每一个相对于第二缆线非垂直地延伸。

公开(公告)号：US20100170872A1

公开(公告)日：2010-07-08

申请号：US12663662

申请日：2008-06-11

申请人： Masaki Hirayama ,  Tadahiro Ohmi

发明人： Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： C23F1/00 ,  B08B6/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32229 ,  H01J37/32238

摘要： The plasma processing apparatus includes: a processing container including a metal; an electromagnetic wave source outputting an electromagnetic wave; a dielectric plate facing an inner wall of the processing container and transmitting the electromagnetic wave, which is output from the electromagnetic wave source, into the processing container; and a groove formed in an inner surface of the processing container and functioning as a propagation disturbing portion. If a low frequency microwave is supplied, the propagation of a conductor surface wave can be suppressed by the groove.

摘要翻译： 等离子体处理装置包括：包括金属的处理容器; 输出电磁波的电磁波源; 面向处理容器的内壁的电介质板，将从电磁波源输出的电磁波传送到处理容器内; 以及形成在处理容器的内表面中并用作传播干扰部分的凹槽。 如果提供低频微波，则可以通过沟槽来抑制导体表面波的传播。

公开(公告)号：US07670454B2

公开(公告)日：2010-03-02

申请号：US11337026

申请日：2006-01-23

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Shigetoshi Sugawa ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.

摘要翻译： 在微波等离子体处理装置中，通过在微波供给波导与微波天线之间设置锥形表面或具有介质介电常数的构件来减小微波提供波导与微波天线之间的接合单元的微波反射，从而 中等阻抗变化。 因此，提高供电效率，减少放电确保等离子体的稳定形成。

公开(公告)号：US07520245B2

公开(公告)日：2009-04-21

申请号：US10861388

申请日：2004-06-07

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/511 ,  C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/34

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/345 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged form different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

摘要翻译： 在微波等离子体处理装置中，在介电材料喷淋板103和主要为惰性气体的等离子体激发气体之间设置金属制的格子状喷淋板111，并且处理气体从不同的位置排出。 高能离子可以通过使网状淋浴板接地而入射在基板114的表面上。 为了使等离子体激发效率达到最大，在微波引入部分的介电材料隔离壁102和电介质材料中的每一个的厚度被优化，同时，缝隙天线110与电介质材料分离之间的距离 电介质材料喷淋板103的厚度优化，能够供给具有大功率的微波。

公开(公告)号：US20090065480A1

公开(公告)日：2009-03-12

申请号：US11990309

申请日：2006-08-04

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B44C1/22 ,  C23F1/08 ,  B01J19/08 ,  C23C16/54

CPC分类号： H05H1/46 ,  H01J37/32192

摘要： Provided is a plasma processing apparatus which can perform uniform processing even when a substrate to be processed has a large area. The plasma processing apparatus propagates microwaves introduced into wave guide tubes to dielectric plates through slots, and performs plasma processing to the surface of the substrate by converting a gas supplied into a vacuum container into the plasma state. In the plasma processing apparatus, a plurality of waveguide tubes are arranged in parallel, a plurality of dielectric plates are arranged for each waveguide tube, and partitioning members formed of a conductor and grounded are arranged between the adjacent dielectric plates. The in-tube wavelength of the waveguide tube is adjusted to be an optimum value by vertically moving a plunger. Furthermore, unintended plasma generation is eliminated in a space between the dielectric plate and the adjacent member, and stable plasma can be efficiently generated. As a result, high-speed and uniform processings, such as etching, film-forming, cleaning, ashing, can be performed.

摘要翻译： 提供一种等离子体处理装置，即使在待处理基板面积大的情况下也能够进行均匀的处理。 等离子体处理装置通过槽将引入导波管的微波传播到电介质板，通过将供给真空容器的气体转换为等离子体状态，对基板的表面进行等离子体处理。 在等离子体处理装置中，多个波导管并列配置，为每个波导管布置多个电介质板，并且在相邻的电介质板之间配置由导体形成的分离构件。 通过垂直移动柱塞将波导管的管内波长调节为最佳值。 此外，在电介质板和相邻构件之间的空间中消除了意外的等离子体产生，并且可以有效地产生稳定的等离子体。 结果，可以进行诸如蚀刻，成膜，清洁，灰化等高速均匀的处理。

公开(公告)号：US20080241016A1

公开(公告)日：2008-10-02

申请号：US12058323

申请日：2008-03-28

申请人： Mitsuo KATO ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

发明人： Mitsuo KATO ,  Masaki Sugiyama ,  Akihiko Hiroe ,  Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： B01J19/12

CPC分类号： H01J37/3299 ,  H01J37/32192 ,  H01J37/32935

摘要： A microwave plasma processing system 10 includes: a processing chamber 100 in which a desired process is applied to a target object using a plasma; a susceptor 106 (stage) in the processing chamber 100 to support the target object; a high-frequency power supply 112 supplying high-frequency electric power to the susceptor 106; a capacitor 108a provided to the susceptor 106; and a measurement device 20 measuring voltages at the pair of plates of the capacitor 108a when high-frequency electric power is supplied from the high-frequency power supply 112 to the susceptor 106.

摘要翻译： 微波等离子体处理系统10包括：处理室100，其中使用等离子体将期望的处理应用于目标物体; 处理室100中的基座106（阶段）以支撑目标物体; 向基座106供给高频电力的高频电源112; 设置在基座106上的电容器108a; 以及测量装置20，当从高频电源112向基座106提供高频电力时，测量电容器108a的一对板的电压。

公开(公告)号：US07374620B2

公开(公告)日：2008-05-20

申请号：US10555770

申请日：2004-04-26

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/00 ,  C23C16/455 ,  C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32192 ,  H01J37/32834 ,  H01J2237/022

摘要： A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.

摘要翻译： 公开了一种使用微波等离子体的基板处理装置（10A），其中在处理室（11）内设置有内隔壁（15），使得处理室（11）的内部被分成空间 ），其中容纳有待处理的基板和由所述内分隔壁（15）和所述处理室（11）的外壁限定的空间（11B）。 通过这样的结构，可以防止由密封材料分离的气体和由异常放电引起的基板污染导致的基板的污染，从而能够清洁基板的处理。

公开(公告)号：US07329609B2

公开(公告)日：2008-02-12

申请号：US10467820

申请日：2002-12-10

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Masaki Hirayama

IPC分类号： H01L21/302

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32357 ,  H01L21/02252 ,  H01L21/3143 ,  H01L21/318

摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.

摘要翻译： 在衬底处理装置中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的处理空间（11C）。 控制电极包括形成在处理容器中并具有用于使等离子体通过的多个孔（131a）的导电构件。 控制电极的表面被氧化铝或导电氮化物覆盖。 在基板处理装置中，将含有He和N 2的气体供给到处理容器中。 在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。 原子态氮N *用于氮化衬底的表面。

公开(公告)号：US07312415B2

公开(公告)日：2007-12-25

申请号：US10706423

申请日：2003-11-10

申请人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

发明人： Tadahiro Ohmi ,  Takahisa Nitta ,  Masaki Hirayama ,  Haruyuki Takano ,  Ryu Kaiwara

IPC分类号： B23K10/00

CPC分类号： H01J37/32238 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01L21/02115 ,  H01L21/0212 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31675 ,  H01L21/31691

摘要： A plasma device which is provided with a container, a gas supply system, and an exhaust system. The container is composed of a first dielectric plate made of a material capable of transmitting microwaves. An antenna for radiating microwaves is located on the outside of the container, and an electrode for holding an object to be treated is located inside the container. The microwave radiating surface of the antenna and the surface of the object to be treated with plasma are positioned in parallel and opposite to each other. A wall section of the container other than that constituting the first dielectric plate is composed of a member of a material having electrical conductivity higher than that of aluminum, or the internal surface of the wall section is covered with the member. The thickness (d) of the member is larger that (2/μ0σ)1/2, where σ, μ0 and ω respectively represent the electrical conductivity of the member, the permeability of vacuum and the angular frequency of the microwaves radiated from the antenna.

摘要翻译： 设置有容器，气体供给系统和排气系统的等离子体装置。 容器由能够传输微波的材料制成的第一电介质板组成。 用于辐射微波的天线位于容器的外部，并且用于保持待处理物体的电极位于容器内部。 天线的微波辐射表面和待处理物体的表面等离子体彼此平行并相对定位。 容器的除构成第一电介质板之外的壁部分由导电率高于铝的材料的构件构成，或者壁部的内表面被构件覆盖。 该部件的厚度（d）大于（2 /μS≤Sigma）1/2，其中σ，μ0和ω 分别表示构件的导电性，真空的磁导率和从天线辐射的微波的角频率。

公开(公告)号：US20070144671A1

公开(公告)日：2007-06-28

申请号：US10584340

申请日：2004-09-24

申请人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

发明人： Tadahiro Ohmi ,  Masaki Hirayama ,  Tetsuya Goto

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01J37/3244 ,  H01J37/32449

摘要： A system for processing a substrate uniformly by increasing the number of gas discharge holes being arranged per unit area of a shower plate as receding from the center of the shower plate or increasing the radii of the gas discharge holes as receding from the center of the shower plate thereby making the plasma excitation gas flow uniform.

摘要翻译： 一种用于通过增加从喷淋板的中心退出的喷淋板的每单位面积排列的排气孔的数量而均匀地处理基板的系统，或者从喷淋中心离开时增加排气孔的半径 从而使等离子体激发气体流动均匀。