Field focusing features in a ReRAM cell
    43.
    发明授权
    Field focusing features in a ReRAM cell 有权
    ReRAM单元中的场聚焦功能

    公开(公告)号:US09118008B2

    公开(公告)日:2015-08-25

    申请号:US14301900

    申请日:2014-06-11

    IPC分类号: H01L21/00 H01L45/00

    摘要: A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.

    摘要翻译: 一种电阻随机存取存储器(ReRAM)单元,包括在第一导电电极上的第一导电电极和介电存储材料层。 电介质存储材料层有利于在将细丝形成电压施加到电池时形成导电细丝。 电池包括位于介电存储材料层上的第二导电电极和包括与电介质存储材料层接触并与第一导电电极或第二导电电极接触的多个纳米团簇的导电纳米团簇(911,1211) 。

    Field focusing features in a ReRAM cell
    44.
    发明授权
    Field focusing features in a ReRAM cell 有权
    ReRAM单元中的场聚焦功能

    公开(公告)号:US09114980B2

    公开(公告)日:2015-08-25

    申请号:US13486641

    申请日:2012-06-01

    摘要: A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and an interface region comprising a plurality of interspersed field focusing features that are not photo-lithographically defined. The interface region is located between the first conductive electrode and the dielectric storage material layer or between the dielectric storage material layer and the second conductive electrode.

    摘要翻译: 一种电阻随机存取存储器(ReRAM)单元,包括在第一导电电极上的第一导电电极和介电存储材料层。 电介质存储材料层有利于在将细丝形成电压施加到电池时形成导电细丝。 该电池包括介于电介质存储材料层之间的第二导电电极和包含多个散光场聚焦特征的界面区域,其不是光刻的。 界面区域位于第一导电电极和介电存储材料层之间,或位于介电存储材料层和第二导电电极之间。

    ReRAM device structure
    45.
    发明授权
    ReRAM device structure 有权
    ReRAM器件结构

    公开(公告)号:US08860001B2

    公开(公告)日:2014-10-14

    申请号:US13442046

    申请日:2012-04-09

    IPC分类号: H01L47/00

    摘要: A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer inlcudes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.

    摘要翻译: 电阻式随机存取存储器(ReRAM)包括在第一金属层上具有第一金属和金属氧化物层的第一金属层。 金属氧化物层包含第一金属。 ReRAM还包括在金属氧化物层上的第二金属层和与第一金属层和金属氧化物层的侧壁物理接触的第一连续导电阻挡层。

    RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING
    46.
    发明申请
    RESISTIVE RANDOM ACCESS MEMORY (RAM) CELL AND METHOD FOR FORMING 审中-公开
    电容随机访问存储器(RAM)单元和形成方法

    公开(公告)号:US20120261635A1

    公开(公告)日:2012-10-18

    申请号:US13085208

    申请日:2011-04-12

    IPC分类号: H01L45/00 H01L21/8239

    摘要: A resistive random access memory cell over a substrate includes a memory stack structure and a sidewall spacer. The memory stack structure is over the substrate and includes a first electrode layer, a second electrode layer, and a metal oxide layer between the first electrode layer and the second electrode layer. The metal oxide layer has a sidewall. The sidewall spacer is adjacent to the sidewall and has a composition including silicon, carbon, and nitrogen.

    摘要翻译: 衬底上的电阻性随机存取存储器单元包括存储器堆叠结构和侧壁间隔物。 存储器堆叠结构在衬底上方,并且在第一电极层和第二电极层之间包括第一电极层,第二电极层和金属氧化物层。 金属氧化物层具有侧壁。 侧壁间隔件与侧壁相邻并且具有包括硅,碳和氮的组成。

    Electronic device including trenches and discontinuous storage elements
    47.
    发明授权
    Electronic device including trenches and discontinuous storage elements 有权
    电子设备包括沟槽和不连续的存储元件

    公开(公告)号:US08193572B2

    公开(公告)日:2012-06-05

    申请号:US12647250

    申请日:2009-12-24

    IPC分类号: H01L29/76

    摘要: An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.

    摘要翻译: 电子设备可以包括包括具有第一底部和第一壁的第一沟槽的衬底。 所述电极装置还可以包括在所述第一沟槽内并且邻近所述第一壁并且覆盖所述第一沟槽的所述第一底部的第一栅极电极以及所述第一沟槽内的第一栅电极并且与所述第一栅电极相邻并且覆盖所述第一栅电极 底部的第一个沟槽。 电子设备还可以包括不连续的存储元件,其包括第一组不连续存储元件,其中第一组不连续存储元件位于(i)第一栅电极或第二栅电极之间,和(ii)第一底部的 第一沟 还描述了形成和使用电子设备的过程。

    Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
    48.
    发明授权
    Electronic device including trenches and discontinuous storage elements and processes of forming and using the same 有权
    包括沟槽和不连续存储元件的电子器件及其形成和使用的方法

    公开(公告)号:US07651916B2

    公开(公告)日:2010-01-26

    申请号:US11626768

    申请日:2007-01-24

    IPC分类号: H01L21/336

    摘要: An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.

    摘要翻译: 电子设备可以包括包括具有第一底部和第一壁的第一沟槽的衬底。 所述电极装置还可以包括在所述第一沟槽内并且邻近所述第一壁并且覆盖所述第一沟槽的所述第一底部的第一栅极电极以及所述第一沟槽内的第一栅电极并且与所述第一栅电极相邻并且覆盖所述第一栅电极 底部的第一个沟槽。 电子设备还可以包括不连续的存储元件,其包括第一组不连续存储元件,其中第一组不连续存储元件位于(i)第一栅电极或第二栅电极之间,和(ii)第一底部的 第一沟 还描述了形成和使用电子设备的过程。

    Process of forming an electronic device including fins and discontinuous storage elements
    49.
    发明授权
    Process of forming an electronic device including fins and discontinuous storage elements 有权
    形成包括翅片和不连续存储元件的电子设备的工艺

    公开(公告)号:US07572699B2

    公开(公告)日:2009-08-11

    申请号:US11626762

    申请日:2007-01-24

    IPC分类号: H01L21/336

    摘要: An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can also include a first gate electrode within the first trench and adjacent to the fin, and a second gate electrode within the second trench and adjacent to the fin. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements and a second set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between the first gate electrode and the fin, and the second set of the discontinuous storage elements lies between the second gate electrode and the fin. Processes of forming and using the electronic device are also described.

    摘要翻译: 电子设备可以包括包括位于第一沟槽和第二沟槽之间的翅片的衬底,其中鳍不大于约90nm宽。 电子器件还可以包括第一沟槽内的第一栅电极并与鳍片相邻,第二栅电极在第二沟槽内并与鳍片相邻。 电子设备还可以包括不连续存储元件,其包括第一组不连续存储元件和第二组不连续存储元件,其中第一组不连续存储元件位于第一栅电极和鳍之间,第二组 不连续的存储元件位于第二栅电极和鳍之间。 还描述了形成和使用电子设备的过程。

    ELECTRONIC DEVICE INCLUDING TRENCHES AND DISCONTINUOUS STORAGE ELEMENTS AND PROCESSES OF FORMING AND USING THE SAME
    50.
    发明申请
    ELECTRONIC DEVICE INCLUDING TRENCHES AND DISCONTINUOUS STORAGE ELEMENTS AND PROCESSES OF FORMING AND USING THE SAME 有权
    电子设备,包括固化床和不连续存储元件及其形成和使用过程

    公开(公告)号:US20080173921A1

    公开(公告)日:2008-07-24

    申请号:US11626753

    申请日:2007-01-24

    摘要: An electronic device can include a substrate including a trench having a bottom and a first wall. The electronic device can also include a first gate electrode within the trench and adjacent to the first wall and overlying the bottom of the trench, a second gate electrode overlying the substrate outside of the trench, and a third gate electrode within the trench and adjacent to the first gate electrode and overlying the bottom of the trench. The electronic device can also include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies adjacent to the first wall of the trench. Processes of forming and using the electronic device are also described.

    摘要翻译: 电子设备可以包括包括具有底部和第一壁的沟槽的衬底。 电子器件还可包括在沟槽内并与第一壁相邻并且覆盖沟槽底部的第一栅电极,覆盖沟槽外部的衬底的第二栅电极和沟槽内的第三栅电极, 第一栅电极并且覆盖沟槽的底部。 电子设备还可以包括不连续的存储元件,包括第一组不连续的存储元件,其中第一组不连续的存储元件位于与沟槽的第一壁相邻的位置。 还描述了形成和使用电子设备的过程。