摘要:
A resistive random access memory cell uses a substrate and includes a gate stack over the substrate. The gate stack includes a first copper layer over the substrate, a copper oxide layer over the first copper layer, and a second copper layer over the copper oxide layer.
摘要:
The present disclosure provides for semiconductor structures and methods for making semiconductor structures. In one embodiment, isolation regions are formed in a substrate, and wells are formed between the isolation regions. The wells include a first low voltage well and a second low voltage well in a logic region of the substrate, and a memory array well in an NVM region of the substrate. A first layer of oxide is formed over the first low voltage well and the memory array well, and a second layer of oxide is formed over the second low voltage well, the second layer being thinner than the first layer. Gates are formed over the wells, including a first gate over the first low voltage well, a second gate over the second low voltage well, and a memory cell gate over the memory array well. Source/drain extension regions are formed around the gates.
摘要:
A resistive random access memory (ReRAM) cell comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and a layer of conductive nanoclusters (911, 1211) including a plurality of nanoclusters in contact with the dielectric storage material layer and in contact with the first conductive electrode or the second conductive electrode.
摘要:
A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and an interface region comprising a plurality of interspersed field focusing features that are not photo-lithographically defined. The interface region is located between the first conductive electrode and the dielectric storage material layer or between the dielectric storage material layer and the second conductive electrode.
摘要:
A resistive random access memory (ReRAM) includes a first metal layer having a first metal and a metal-oxide layer on the first metal layer. The metal-oxide layer inlcudes the first metal. The ReRAM further includes a second metal layer over the metal-oxide layer and a first continuous conductive barrier layer in physical contact with sidewalls of the first metal layer and of the metal-oxide layer.
摘要:
A resistive random access memory cell over a substrate includes a memory stack structure and a sidewall spacer. The memory stack structure is over the substrate and includes a first electrode layer, a second electrode layer, and a metal oxide layer between the first electrode layer and the second electrode layer. The metal oxide layer has a sidewall. The sidewall spacer is adjacent to the sidewall and has a composition including silicon, carbon, and nitrogen.
摘要:
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
摘要:
An electronic device can include a substrate including a first trench having a first bottom and a first wall. The electrode device can also include a first gate electrode within the first trench and adjacent to the first wall and overlying the first bottom of the first trench, and a second gate electrode within the first trench and adjacent to the first gate electrode and overlying the first bottom of the first trench. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between (i) the first gate electrode or the second gate electrode and (ii) the first bottom of the first trench. Processes of forming and using the electronic device are also described.
摘要:
An electronic device can include a substrate including a fin lying between a first trench and a second trench, wherein the fin is no more than approximately 90 nm wide. The electronic device can also include a first gate electrode within the first trench and adjacent to the fin, and a second gate electrode within the second trench and adjacent to the fin. The electronic device can further include discontinuous storage elements including a first set of discontinuous storage elements and a second set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies between the first gate electrode and the fin, and the second set of the discontinuous storage elements lies between the second gate electrode and the fin. Processes of forming and using the electronic device are also described.
摘要:
An electronic device can include a substrate including a trench having a bottom and a first wall. The electronic device can also include a first gate electrode within the trench and adjacent to the first wall and overlying the bottom of the trench, a second gate electrode overlying the substrate outside of the trench, and a third gate electrode within the trench and adjacent to the first gate electrode and overlying the bottom of the trench. The electronic device can also include discontinuous storage elements including a first set of discontinuous storage elements, wherein the first set of the discontinuous storage elements lies adjacent to the first wall of the trench. Processes of forming and using the electronic device are also described.