公开(公告)号：US20120216449A1

公开(公告)日：2012-08-30

申请号：US13391727

申请日：2010-08-30

申请人： Kazuaki Hayasaka ,  Hideki Ono ,  Akira Koyama ,  Hideshi Iki

发明人： Kazuaki Hayasaka ,  Hideki Ono ,  Akira Koyama ,  Hideshi Iki

IPC分类号： C10L1/188

CPC分类号： B01J29/7484 ,  B01J23/85 ,  B01J23/883 ,  B01J29/7461 ,  B01J29/7492 ,  B01J29/85 ,  C10G3/46 ,  C10G3/49 ,  C10G3/50 ,  C10G45/64 ,  C10G2300/1014 ,  C10G2300/1018 ,  C10G2300/202 ,  C10G2400/08 ,  C10L1/04 ,  Y02P30/20

摘要： A method for producing an aviation fuel oil base includes obtaining a first generated oil by hydrotreating a feedstock by bringing a feedstock which includes an oxygen-containing hydrocarbon compound derived from an animal or vegetable oils and fat into contact with a first dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of group 6A of the periodic table, a metal of group 8, and an amorphous solid acidic substance, in the presence of hydrogen; and obtaining a second generated oil including an aviation fuel oil base by hydroisomerizing the first generated oil by bringing the first generated oil into contact with a second dual functional catalyst which has dehydrogenation and hydrogenation functions and which includes a metal of the group 8 of the periodic table and a crystalline solid acidic substance, in the presence of hydrogen.

摘要翻译： 一种航空燃料油基料的制造方法，其特征在于，通过使来自动物或植物油脂的含氧烃化合物的原料与第一双官能催化剂接触而进行加氢处理，得到第一产生油， 脱氢和氢化功能，其包括周期表第6A族金属，第8族金属和无定形固体酸性物质，在氢的存在下; 以及通过使第一产生的油与具有脱氢和氢化功能的第二双功能催化剂接触来获得包含航空燃料油基的第二产生的油，该第二双功能催化剂包括周期性的第8族金属 表和结晶固体酸性物质，在氢的存在下。

公开(公告)号：US20120149179A1

公开(公告)日：2012-06-14

申请号：US13402383

申请日：2012-02-22

申请人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

发明人： Satoshi Taniguchi ,  Nobuhiro Suzuki ,  Hideki Ono

IPC分类号： H01L21/20

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/30612 ,  H01L29/66318 ,  H01L33/0079 ,  H01L33/02

摘要： There is provided a method of manufacturing a semiconductor device which, in the case where an InP-based device is formed with a sacrificial layer in between, is capable of obtaining better device characteristics than those in the case where an AlAs single layer is used as the sacrificial layer, and which does not have the possibility that the device layer is etched together with the sacrificial layer during etching of the sacrificial layer. A method of manufacturing a semiconductor device includes: a formation step of forming a sacrificial layer which is pseudomorphic to InP on an InP substrate, and then forming an InP-based device layer on the sacrificial layer; and a separation step of separating the InP substrate and the device layer from each other by etching the sacrificial layer.

摘要翻译： 提供一种制造半导体器件的方法，其中在其间形成有牺牲层的基于InP的器件的情况下，与使用AlAs单层的情况相比，能够获得更好的器件特性 牺牲层，并且在蚀刻牺牲层期间不具有将牺牲层与器件层一起蚀刻的可能性。 一种制造半导体器件的方法包括：形成步骤，在InP衬底上形成与InP伪造的牺牲层，然后在牺牲层上形成基于InP的器件层; 以及通过蚀刻牺牲层将InP衬底和器件层彼此分离的分离步骤。

公开(公告)号：US20110237853A1

公开(公告)日：2011-09-29

申请号：US13119310

申请日：2009-09-16

申请人： Tatsuo Hamamatsu ,  Hideki Ono ,  Yasutoshi Iguchi ,  Hideshi Iki ,  Yoshihiko Kinoshita

发明人： Tatsuo Hamamatsu ,  Hideki Ono ,  Yasutoshi Iguchi ,  Hideshi Iki ,  Yoshihiko Kinoshita

IPC分类号： C10G1/00

CPC分类号： C10G45/02 ,  C10G3/46 ,  C10G3/49 ,  C10G3/50 ,  C10G2300/1014 ,  C10G2300/1018 ,  C10G2300/202 ,  C10G2300/4018 ,  Y02P30/20

摘要： A method for manufacturing a hydrocarbon oil, comprising: a first step wherein a feedstock oil containing an oxygen-containing organic compound and a water-insoluble chlorine-containing compound is brought into contact with a hydrogenation catalyst comprising a support containing a porous inorganic oxide and one or more metals selected from Group VIA and Group VIII of the periodic table supported on the support in the presence of hydrogen to generate a hydrocarbon oil and water in a vapor state by the hydrodeoxygenation of an oxygen-containing organic compound and convert the water-insoluble chlorine-containing compound into a water-soluble chlorine-containing compound; a second step wherein the water in the reaction product of the first step is maintained in a vapor state and the reaction product of the first step is brought into contact with a nitrogen-containing Brønsted base compound which has a boiling point at normal pressure of 100° C. or less and is water-soluble to obtain a product to be treated; and a third step wherein the product to be treated is cooled to a temperature not higher than the temperature at which water in a vapor state is liquefied to form an aqueous phase containing a water-soluble chlorine-containing compound and a nitrogen-containing Brønsted base compound and then separate the aqueous phase from an oil to be treated to obtain a product oil containing a hydrocarbon oil.

摘要翻译： 一种烃油的制造方法，包括：第一工序，其中含有含氧有机化合物的原料油和不溶于水的含氯化合物与含有多孔无机氧化物的载体的氢化催化剂接触， 选自元素周期表第VIA族和第VIII族的一种或多种金属在氢气存在下负载在载体上以通过含氧有机化合物的加氢脱氧产生烃油和蒸气状态的水， 不溶性含氯化合物变成水溶性含氯化合物; 第二步骤，其中第一步骤的反应产物中的水保持蒸气状态，并使第一步的反应产物与常压下的沸点为100的含氮布朗斯台德碱化合物接触 ℃或更低，并且是水溶性的，以获得待处理的产品; 以及第三步骤，其中待处理的产品被冷却到不高于蒸汽状态的水液化的温度的温度，以形成含有水溶性含氯化合物和含氮布朗斯台德碱的水相 化合物，然后将水相与待处理的油分离，得到含有烃油的产物油。

公开(公告)号：US20110081746A1

公开(公告)日：2011-04-07

申请号：US12888488

申请日：2010-09-23

申请人： Akihiro Nomoto ,  Hideki Ono

发明人： Akihiro Nomoto ,  Hideki Ono

IPC分类号： H01L51/40

CPC分类号： H01L51/0015 ,  H01L51/0011 ,  H01L51/0545 ,  H01L51/0558

摘要： A method for producing a semiconductor device includes the steps of forming an organic semiconductor layer on a substrate; forming a protective pattern on the organic semiconductor layer; and patterning the organic semiconductor layer by dissolving, in an organic solvent, or subliming the organic semiconductor layer using the protective pattern as a mask.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在衬底上形成有机半导体层; 在有机半导体层上形成保护图案; 并通过在有机溶剂中溶解或使用保护图案作为掩模使有机半导体层升华来图案化有机半导体层。

公开(公告)号：US07754178B2

公开(公告)日：2010-07-13

申请号：US11573875

申请日：2005-08-12

申请人： Tamotsu Tano ,  Takashi Oyama ,  Hideki Ono ,  Keizo Ikai ,  Kiwamu Takeshita

发明人： Tamotsu Tano ,  Takashi Oyama ,  Hideki Ono ,  Keizo Ikai ,  Kiwamu Takeshita

IPC分类号： D01F9/12 ,  C01B31/00 ,  C01B31/02 ,  H01G4/008

CPC分类号： H01G11/44 ,  C01B32/05 ,  C01B32/348 ,  H01G11/32 ,  H01G11/34 ,  Y02E60/13 ,  Y02T10/7022

摘要： The capacitance per volume of an electric double-layer capacitor can be increased by using a raw-material carbon composition for use in a carbon material for an electrode of the electric double-layer capacitor by applying an activation process, characterized in that the raw-material carbon composition has a volatile content of 1.3% by mass to 15% by mass (both inclusive), and microstrength of 5 to 30% when the volatile content is less than 6% by mass while microstrength of 5 to 20% when the volatile content is 6% or more.

摘要翻译： 通过施加激活过程，可以通过使用用于双电层电容器的电极的碳材料的原料碳组合物来增加电双层电容器的体积电容，其特征在于， 当挥发物含量小于6质量％时，挥发物含量为1.3质量％〜15质量％（微小），当微量强度为5〜20％时，挥发性 内容为6％以上。

公开(公告)号：US20080144255A1

公开(公告)日：2008-06-19

申请号：US11722397

申请日：2005-12-21

申请人： Tamotsu Tano ,  Shiro Nakamo ,  Takashi Oyama ,  Hideki Ono ,  Keizou Ikai ,  Kiwamu Takeshita

发明人： Tamotsu Tano ,  Shiro Nakamo ,  Takashi Oyama ,  Hideki Ono ,  Keizou Ikai ,  Kiwamu Takeshita

IPC分类号： H01G4/008 ,  C01B31/00

CPC分类号： H01G9/155 ,  C01B32/348 ,  H01G9/058 ,  H01G11/34 ,  Y02E60/13

摘要： The present invention provides a raw material carbon composition that is converted to a carbon material for an electrode in an electric double layer capacitor that can develop a high level of electrostatic capacity with good reproducibility without producing any synthetic pitch. The raw material carbon composition is converted to a carbon material for an electrode in an electric double layer capacitor upon activation treatment and is characterized in that, when the raw material carbon composition is carbonized in an inert gas atmosphere at a temperature of 1000 to 1500° C., the true relative density (RD) and the total hydrogen content (TH %) in the carbonized material obtained after the burning satisfy the following formula (1): RD=−0.75TH %+intercept   (1) wherein the intercept is 2.160 or greater.

摘要翻译： 本发明提供一种原料碳组合物，其可以转化为双电层电容器中的电极用碳材料，其可以以高再现性产生高水平的静电容量，而不产生任何合成间距。 原料碳组合物在活化处理后转变为双电层电容器中的电极用碳材料，其特征在于，当原料碳组成在惰性气体气氛中在1000〜1500℃的温度下碳化时 在燃烧后获得的碳化材料中的真实相对密度（RD）和总氢含量（TH％）满足下式（1）：<？在线公式描述=“在线公式” end =“lead”？> RD = -0.75TH％+ intercept（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中截距为2.160或更大。

公开(公告)号：US06411765B1

公开(公告)日：2002-06-25

申请号：US09533737

申请日：2000-03-23

申请人： Hideki Ono

发明人： Hideki Ono

IPC分类号： G02B610

CPC分类号： G02B6/12002 ,  G02B6/125 ,  G02B2006/12147

摘要： According to the present invention, which provides a optical waveguide element achieving high performance and high yield, that makes it possible to form a complex light-wave circuit structure without requiring a larger mounting area and a optical waveguide element manufacturing method, a optical waveguide element 100 is provided with an Si substrate 102 and a first light-wave circuit layer 112 and a second light-wave circuit layer 120 sequentially laminated on the substrate 102. At the first light-wave circuit layer 112, a first optical waveguide structure constituted of a first clad layer 104 formed toward the substrate 102, a first core portion 108 and a second clad layer 110 formed toward the second light-wave circuit layer 120 is achieved. In addition, at the second light-wave circuit layer 120, a second optical waveguide structure constituted of a second core portion 116 and a third clad layer 118 at the second light-wave circuit layer 120 is achieved. Since the first light-wave circuit layer 112 and the second light-wave circuit layer 120 are directly laminated, a directional optical coupling is induced between the first core portion 108 and the second core portion 116.

摘要翻译： 根据本发明，其提供了实现高性能和高产量的光波导元件，这使得可以形成复杂的光波形电路结构而不需要较大的安装面积和光波导元件制造方法，光波导元件 100设置有Si衬底102和顺序层压在衬底102上的第一光波电路层112和第二光波电路层120.在第一光波电路层112处，第一光波导结构由 实现朝向基板102形成的第一覆盖层104，朝向第二光波电路层120形成的第一芯部分108和第二覆盖层110。 此外，在第二光波电路层120处，实现了在第二光波电路层120处由第二芯部116和第三包层118构成的第二光波导结构。 由于第一光波电路层112和第二光波电路层120直接层叠，因此在第一芯部108和第二芯部116之间产生定向光耦合。

公开(公告)号：US06353088B1

公开(公告)日：2002-03-05

申请号：US09646574

申请日：2000-09-19

申请人： Toshihisa Fujitaka ,  Koji Hirashima ,  Hideki Ono ,  Keiichi Hayashi

发明人： Toshihisa Fujitaka ,  Koji Hirashima ,  Hideki Ono ,  Keiichi Hayashi

IPC分类号： C08F600

CPC分类号： C08F6/003

摘要： This invention relates to a method for removing unreacted monomers and other volatile matters from a polymer solution composition produced from a mixture containing an aromatic vinyl monomer, utilizes two or more flash devolatilizing vessels, and effects the removal by adjusting the solid content of the polymer solution composition at the outlet of the devolitilizer before the last-stage devolitilizer to a level in excess of 97%, adding 0.5-4 parts by weight of a foaming agent to the total polymer solution composition, passing the polymer solution composition through the last-stage devolitilizer while maintaining the pressure of the polymer solution at 10 kg/cm2 or more by means of a pressure controller and the temperature in the range 190-260° C., introducing the polymer solution composition to a vapor-liquid separation vessel maintained at a vacuum of 20 Torr or less, and allowing the composition to foam.

摘要翻译： 本发明涉及从由含有芳香族乙烯基单体的混合物制备的聚合物溶液组合物中除去未反应的单体和其它挥发物的方法，利用两个或更多个闪蒸脱挥发容器，并通过调节聚合物溶液的固体含量 在最后阶段脱挥发酵剂之前的脱挥发剂的出口处的组成达到超过97％的水平，向总的聚合物溶液组合物中加入0.5-4重量份的发泡剂，使聚合物溶液组合物通过最后阶段 通过压力控制器和190-260℃的温度将聚合物溶液的压力保持在10kg / cm 2或更高的压力下，将聚合物溶液组合物引入保持在 真空度为20托或更低，并使组合物发泡。

公开(公告)号：US6096374A

公开(公告)日：2000-08-01

申请号：US138667

申请日：1998-08-24

申请人： Masayuki Ohta ,  Takehiko Iwaoka ,  Fumiaki Arai ,  Hiroshi Tateishi ,  Masanori Rimoto ,  Hideki Ono ,  Tetsuo Tanaka ,  Yuji Natori

发明人： Masayuki Ohta ,  Takehiko Iwaoka ,  Fumiaki Arai ,  Hiroshi Tateishi ,  Masanori Rimoto ,  Hideki Ono ,  Tetsuo Tanaka ,  Yuji Natori

IPC分类号： B32B37/24 ,  B41C1/14 ,  B41N1/24 ,  B41M3/12

CPC分类号： B32B37/24 ,  B41C1/144 ,  B41N1/242 ,  B41N1/243 ,  B32B2305/026 ,  Y10T428/24322 ,  Y10T428/24331 ,  Y10T428/24802

摘要： A heat-sensitive stencil having a thermoplastic resin film, and a porous resin layer formed thereon. The stencil has an air permeability in the range of 1.0 cm.sup.3 /cm.sup.2 .multidot.sec to 157 cm.sup.3 /cm.sup.2 .multidot.sec in a portion thereof when the thermoplastic resin film of the portion is perforated to form perforations providing an open ratio S.sub.O /S.sub.P of at least 0.2, wherein S.sub.O represents a total area of the perforations and S.sub.P represents the area of the portion. The heat-sensitive stencil is prepared by applying a coating liquid containing the resin of the porous resin layer to the thermoplastic resin film and drying the coating. The coating liquid contains a mixture of a good solvent and a poor solvent less vaporizable than the good solvent so that the porous resin layer is formed after drying.

摘要翻译： 具有热塑性树脂膜的热敏模版和形成在其上的多孔树脂层。 当该部分的热塑性树脂膜被穿孔以形成提供至少为0.2的开放比率SO / SP的穿孔时，该模版的透气度在1.0cm 3 / cm 2×sec至157cm 3 / cm 2·sec的范围内，其中SO 表示穿孔的总面积，SP表示该部分的面积。 通过将含有多孔树脂层的树脂的涂布液涂布到热塑性树脂膜上并干燥该涂层来制备热敏模版。 涂布液含有良溶剂和不良溶剂不良溶剂的混合物，从而在干燥后形成多孔树脂层。

公开(公告)号：US09683557B2

公开(公告)日：2017-06-20

申请号：US14002145

申请日：2011-03-07

申请人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

发明人： Takuya Yoshida ,  Naoyuki Nagafuchi ,  Hideki Ono

IPC分类号： F24J2/07 ,  F03G6/06 ,  F03G6/00 ,  F01K3/16 ,  F01K3/18 ,  F24J2/34 ,  F01K3/00

CPC分类号： F03G6/003 ,  F01K3/004 ,  F01K3/16 ,  F01K3/18 ,  F03G6/00 ,  F03G6/005 ,  F03G6/065 ,  F03G6/067 ,  F24S20/20 ,  F24S60/00 ,  Y02E10/44 ,  Y02E10/46

摘要： An object of the present invention is to provide a solar heat steam cycle system capable of operating efficiently and stably in keeping with the status of collected or stored heat, and a control method for use with the system.The system includes a heat collector (1) which collects solar thermal energy, a thermal storage device (2) which stores the solar thermal energy collected by the heat collector, a feed water heater (3) which heats feed water, an evaporator (4) which evaporates the feed water supplied from the feed water heater, and a steam turbine (6) driven by steam generated by the evaporator. The system includes a control valve (31) which controls allocations of heating medium supplied from the thermal storage device to the evaporator and the feed water heater.