公开(公告)号：US07459847B2

公开(公告)日：2008-12-02

申请号：US10925840

申请日：2004-08-25

申请人： Yoshio Kurosawa ,  Takuya Watanabe

发明人： Yoshio Kurosawa ,  Takuya Watanabe

IPC分类号： H01J63/04

CPC分类号： H01L51/5271 ,  H01L51/5218 ,  H01L51/5268 ,  H01L51/5281 ,  H01L2251/5315

摘要： A wiring structure, a substrate for a display device provided therewith and a display device. The display device features a high brightness and a good display quality. The display device comprises a plurality of pixel regions arranged on a glass substrate; a TFT arranged for each of the pixel regions; an organic EL element including an anode formed by using an ITO for each of the pixel regions, and electrically connected to the source electrode of the TFT, an organic EL layer formed on the anode, and a cathode formed on the organic EL layer to transmit light from the organic EL layer; and a reflection plate for reflecting light from the organic EL layer.

摘要翻译： 布线结构，用于其设置的显示装置用基板和显示装置。 显示设备具有高亮度和良好的显示质量。 显示装置包括布置在玻璃基板上的多个像素区域; 为每个像素区域布置的TFT; 一种有机EL元件，包括通过对每个像素区域使用ITO而形成的阳极，并且电连接到TFT的源电极，形成在阳极上的有机EL层和形成在有机EL层上的阴极，以传输 有机EL层的光; 以及用于反射来自有机EL层的光的反射板。

公开(公告)号：US20070232538A1

公开(公告)日：2007-10-04

申请号：US11647076

申请日：2006-12-27

申请人： Yoshio Matsumoto ,  Takuya Watanabe ,  Hideki Takahashi ,  Masaaki Mori

发明人： Yoshio Matsumoto ,  Takuya Watanabe ,  Hideki Takahashi ,  Masaaki Mori

IPC分类号： A61K48/00 ,  A61K38/17

CPC分类号： C07D223/16 ,  A61K31/4025 ,  A61K31/4375 ,  A61K31/4745 ,  A61K31/55 ,  A61K38/00 ,  A61K48/00 ,  C07D295/13 ,  C07D471/04 ,  C07K14/47

摘要： The present invention provides uses of a polypeptide having a ligand activity to a sensory epithelium neuropeptide-like receptor (SENR) which is a G protein-coupled receptor protein, and a DNA encoding the same. More specifically, the present invention provides an anti-attention-deficit-disorder or anti-narcolepsy agent, which comprises a polypeptide having a ligand activity for SENR or a salt thereof, as well as a method for screening compounds having an anti-attention-deficit-disorder or anti-narcolepsy activity or compounds having an anti-anxiety, anti-depression, anti-insomnia, anti-schizophrenia or anti-fear activity or salts thereof, which comprises using the above polypeptide or a precursor protein of the polypeptide or a salt thereof.

摘要翻译： 本发明提供了作为G蛋白偶联受体蛋白质的感觉上皮神经肽样受体（SENR）具有配体活性的多肽及其编码的DNA的用途。 更具体地，本发明提供了包含对SENR具有配体活性的多肽或其盐的抗注意力缺陷障碍或抗发作性睡病剂，以及用于筛选具有抗注意力缺陷型或抗发作性睡病的化合物的方法， 包括使用上述多肽或该多肽的前体蛋白，或者，具有抗焦虑，抗抑郁，抗失眠，抗精神分裂症或抗恐惧活性的化合物或抗发作性睡病活动， 其盐。

公开(公告)号：US07192723B2

公开(公告)日：2007-03-20

申请号：US10719587

申请日：2003-11-21

申请人： Takuya Watanabe ,  Kuniko Kikuchi ,  Yasuko Terao ,  Yasushi Shintani ,  Shuji Hinuma ,  Shoji Fukusumi ,  Ryo Fujii ,  Masaki Hosoya ,  Chieko Kitada

发明人： Takuya Watanabe ,  Kuniko Kikuchi ,  Yasuko Terao ,  Yasushi Shintani ,  Shuji Hinuma ,  Shoji Fukusumi ,  Ryo Fujii ,  Masaki Hosoya ,  Chieko Kitada

IPC分类号： C07K7/08 ,  C07K14/47 ,  G01N33/566

CPC分类号： C07K14/705 ,  C07K14/723 ,  C07K16/28 ,  G01N33/566 ,  G01N33/74 ,  G01N2333/726

摘要： The polypeptides in the present invention possess the effects of promoting and inhibiting the secretion of prolactin, and are thus useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion stimulants, which are associated with the secretion of prolactin, such as hypoovarianism, spermatic underdevelopment, menopausal symptoms, hypothyroidism, etc. The polypeptides are useful as drugs for the prevention and treatment of various diseases, in terms of prolactin secretion inhibitors, which are associated with the secretion of prolactin, such as pituitary tumor, diencephalon tumor, menstrual disorder, autoimmune diseases, prolactinoma, sterility, impotence, amenorrhea, lactorrhea, acromegaly, Chiari-Frommel syndrome, Argonz-del Castilo syndrome, Forbes-Albright syndrome, lymphoma, Sheehan's syndrome, spermatogenesis disorder, etc.

摘要翻译： 本发明中的多肽具有促进和抑制催乳素分泌的作用，因此可用作预防和治疗与催乳素分泌有关的催乳激素分泌兴奋剂的各种疾病的药物，例如 作为低血糖症，精神发育不良，绝经期症状，甲状腺机能减退等。多肽可用作预防和治疗各种疾病的催乳素分泌抑制剂，其与催乳素分泌相关，例如垂体瘤，间脑瘤 肿瘤，月经紊乱，自身免疫性疾病，催乳素瘤，不育症，阳ence，闭经，泌乳，肢端肥大症，Chiari-Frommel综合征，阿尔贡兹 - 德尔卡斯蒂略综合征，福布斯 - 奥尔布赖特综合征，淋巴瘤，Sheehan综合征，精子发生障碍等。

公开(公告)号：US06699965B1

公开(公告)日：2004-03-02

申请号：US09830428

申请日：2001-04-26

申请人： Takuya Watanabe ,  Yasuko Terao ,  Yasushi Shintani ,  Tetsuya Ohtaki ,  Kimiko Kanehashi ,  Chieko Kitada

发明人： Takuya Watanabe ,  Yasuko Terao ,  Yasushi Shintani ,  Tetsuya Ohtaki ,  Kimiko Kanehashi ,  Chieko Kitada

IPC分类号： C07K1400

CPC分类号： G01N33/566 ,  A61K38/00 ,  C07K14/705 ,  G01N2333/726 ,  G01N2500/02

摘要： G Protein-coupled receptor proteins originating in the vicinity of rat brain stem and human brain or salts thereof, or peptide fragments thereof or amides, esters or salts of the same; ligands thereto; a method/kit for screening compounds capable of altering the binding properties of the ligands to the G protein-coupled receptor proteins; the compounds or salts thereof obtained by the above screening; antibodies against the G protein-coupled receptor proteins, etc.

摘要翻译： G起源于大鼠脑干和人脑或其盐附近的蛋白质偶联受体蛋白质，或其肽片段或其酰胺，酯或其盐; 配体; 用于筛选能够改变配体与G蛋白偶联受体蛋白质的结合性质的化合物的方法/试剂盒; 通过上述筛选获得的化合物或其盐; 针对G蛋白偶联受体蛋白的抗体等

公开(公告)号：US06458392B1

公开(公告)日：2002-10-01

申请号：US09901909

申请日：2001-07-11

申请人： Wataru Okawa ,  Yuki Mitsui ,  Takuya Watanabe ,  Yasuteru Eguchi ,  Hirokazu Takahashi ,  Atsushi Suzuki

发明人： Wataru Okawa ,  Yuki Mitsui ,  Takuya Watanabe ,  Yasuteru Eguchi ,  Hirokazu Takahashi ,  Atsushi Suzuki

IPC分类号： A61K3578

CPC分类号： A61K36/74 ,  A23F5/02 ,  A23F5/24 ,  A23L23/00 ,  A61K2300/00

摘要： Provided is a preventive, ameliorant or remedy for hypertension excellent in both blood pressure lowering action and blood pressure-rise suppressing action and having high safety. This preventive, ameliorant or remedy for hypertension comprises a coffee bean extract.

摘要翻译： 提供对降血压作用和血压升高抑制作用均优异且安全性高的高血压的预防，改善或补救。高血压的预防，改善或补救措施包括咖啡豆提取物。

公开(公告)号：US06376861B1

公开(公告)日：2002-04-23

申请号：US09713890

申请日：2000-11-16

申请人： Hiroyuki Yaegashi ,  Takuya Watanabe ,  Tetsuya Kida ,  Akira Komorita

发明人： Hiroyuki Yaegashi ,  Takuya Watanabe ,  Tetsuya Kida ,  Akira Komorita

IPC分类号： H01L2904

CPC分类号： H01L29/458 ,  H01L21/28008 ,  H01L27/12 ,  H01L27/124 ,  H01L29/4908

摘要： A thin film transistor comprises a gate electrode 18 formed on a substrate 10, a gate insulation film 20, a semiconductor layer 22, a source electrode 36a and a drain electrode 36b. The gate electrode, the source electrode or the drain electrode include a first conductor film 12, a second conductor film 14 and a third conductor film 16. The first conductor film is formed of a metal selected out of Al, Cu and Ag, or an alloy of a metal, as a main component, selected out of Al, Cu and Ag, and has the side surfaces sloped. The second conductor film is formed of a film of Mo containing nitrogen, or an alloy of Mo, as a main component, containing nitrogen, and has the side surfaces sloped. The third conductor film is formed of Mo or an alloy of Mo as a main component.

摘要翻译： 薄膜晶体管包括形成在基板10上的栅极电极18，栅极绝缘膜20，半导体层22，源极电极36a和漏极电极36b。 栅电极，源电极或漏极包括第一导体膜12，第二导体膜14和第三导体膜16.第一导体膜由选自Al，Cu和Ag的金属或 作为主要成分的金属合金，选自Al，Cu和Ag，并且其侧面倾斜。 第二导体膜由含有氮的Mo或作为主要成分的含有氮的Mo的合金的膜形成，并且侧面倾斜。 第三导体膜由Mo或Mo作为主要成分的合金形成。

公开(公告)号：US06340961B1

公开(公告)日：2002-01-22

申请号：US09173001

申请日：1998-10-15

申请人： Akira Tanaka ,  Takuya Watanabe ,  Hachiro Yamada

发明人： Akira Tanaka ,  Takuya Watanabe ,  Hachiro Yamada

IPC分类号： G06F1500

CPC分类号： G09G3/2033 ,  G09G3/296 ,  G09G2310/0286 ,  G09G2320/0261 ,  G09G2320/0266 ,  G09G2320/0285 ,  G09G2340/16

摘要： When gradation data of a present frame is corrected in combination with gradation data of a preceding frame for each display pixel, the level of correction is controlled according to a predetermined dispersion pattern corresponding to a matrix of pixels on a plasma display panel. The display pixels where the gradation level varies in the same way are not corrected uniformly, but some are excessively corrected and some are uncorrected such that they are mixed in a two-dimensional pattern. Moving images displayed on the plasma display panel with gradations expressed according to the subfield process for pixels are prevented from suffering false moving image contours.

摘要翻译： 当与每个显示像素的前一帧的灰度数据组合校正当前帧的灰度数据时，根据与等离子体显示面板上的像素矩阵相对应的预定色散模式来控制校正电平。 灰度级以相同的方式变化的显示像素未被均匀地校正，但是一些被过度校正，并且一些未被校正，使得它们以二维图案混合。 显示在等离子体显示面板上的运动图像，其具有根据像素的子场处理表示的灰度被防止遭受假运动图像轮廓。

公开(公告)号：US06255706B1

公开(公告)日：2001-07-03

申请号：US09477059

申请日：2000-01-03

申请人： Takuya Watanabe ,  Hiroyuki Yaegashi ,  Hideki Noto ,  Tetsuya Kida

发明人： Takuya Watanabe ,  Hiroyuki Yaegashi ,  Hideki Noto ,  Tetsuya Kida

IPC分类号： H01L2976

CPC分类号： H01L29/78669 ,  H01L29/458 ,  Y10S257/905

摘要： A thin film transistor wherein at least one of (1) a gate electrode and/or a scanning line therefor and (2) source/drain electrode and/or signal lines therefor comprises a laminated wiring structure in which a main wiring layer formed of a metal selected from Al and Cu or an alloy based on the metal is sandwiched between an underlying wiring layer and an overlaying wiring layer, the underlying and overlaying wiring layers being formed of a material based on a metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and the materials used in the underlying and overlaying wiring layers being different from each other. Alternatively, the underlying and overlaying wiring layers are formed of a material based on the same metal or alloy of metals and containing nitrogen, the metal being selected from Ti, Mo, W, Cr, Al and Cu, and contents of nitrogen in the underlying and overlaying wiring layers being different from each other. A method of manufacturing such a thin film transistor is also disclosed.

摘要翻译： 一种薄膜晶体管，其中（1）栅电极和/或其扫描线和（2）源/漏电极和/或信号线中的至少一个包括层叠布线结构，其中主布线层由 选自Al和Cu的金属或基于金属的合金夹在下面的布线层和覆盖布线层之间，下面和重叠的布线层由基于金属或金属合金并含有氮的材料形成， 金属选自Ti，Mo，W，Cr，Al和Cu，下层和重叠布线层中使用的材料彼此不同。 或者，底层和覆盖布线层由基于相同的金属或金属合金并含有氮的材料形成，金属选自Ti，Mo，W，Cr，Al和Cu，以及底层中的氮含量 并且覆盖布线层彼此不同。 还公开了制造这种薄膜晶体管的方法。

公开(公告)号：US5340977A

公开(公告)日：1994-08-23

申请号：US912486

申请日：1992-07-13

申请人： Motohiro Kojima ,  Takuya Watanabe ,  Tohru Takamura

发明人： Motohiro Kojima ,  Takuya Watanabe ,  Tohru Takamura

IPC分类号： H01L27/148 ,  H04N1/028 ,  H04N9/04 ,  H04N9/07 ,  H01J40/14 ,  H01L27/14 ,  H01L29/78

CPC分类号： H04N9/045 ,  H01L27/14868 ,  H04N3/1581

摘要： A solid-state image pickup device, and in particular, a CCD image sensor is capable of color reading, wherein n lines (n.gtoreq.2) of photo diodes disposing a plurality of photodiodes straightly are disposed parallel adjacently to each other, and adjacent n lines of CCD analog shift registers are disposed parallel to the photodiode lines at one side of the group of n lines of photodiodes, and the signal charges are transferred through a gate structure composed of MOS structure, between adjacent lines of n lines of photodiodes and n lines of CCD analog shift registers. It is therefore possible to reduce the intervals of the photodiode lines to the limit, thereby realizing a CCD color linear image sensor capable of outstandingly simplifying the signal time axis correction circuit such as semiconductor digital memory device for correcting the differences of reading positions of the photodiode lines.

摘要翻译： 固态图像拾取装置，特别是CCD图像传感器能够进行彩色读取，其中直线布置多个光电二极管的n线（n> / = 2）彼此平行地布置，并且 相邻的n行CCD模拟移位寄存器与n个光电二极管组的一侧的光电二极管线平行设置，并且信号电荷通过由MOS结构构成的栅极结构在n条光电二极管的相邻线之间传输 和n行CCD模拟移位寄存器。 因此，可以将光电二极管线的间隔减小到极限，从而实现能够显着简化诸如半导体数字存储装置的信号时间轴校正电路的CCD彩色线性图像传感器，用于校正光电二极管的读取位置的差异 线条。

公开(公告)号：US4876219A

公开(公告)日：1989-10-24

申请号：US318638

申请日：1989-03-03

申请人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

发明人： Takashi Eshita ,  Fumitake Mieno ,  Yuji Furumura ,  Takuya Watanabe

IPC分类号： H01L21/20 ,  H01L21/205

CPC分类号： H01L21/0262 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02507 ,  H01L21/02546 ,  H01L21/02658 ,  Y10S148/025 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/154 ,  Y10S148/169 ,  Y10S438/933

摘要： A method of forming a semiconductor thin layer on a silicon substrate comprising the steps of depositing a first amorphous layer of a compound semiconductor (e.g., GaAs) on the silicon substrate, and growing a first epitaxial layer of the compound semiconductor on the amorphous layer, characterized in that the method comprises the steps of: after the epitaxial growth step, depositing a second amorphous layer of the compound semiconductor on the first epitaxial layer, and growing a second epitaxial layer of the compound semiconductor on the second amorphous layer. The obtained GaAs/Si substrate has a reduced dislocation density.