公开(公告)号：US07968432B2

公开(公告)日：2011-06-28

申请号：US11598653

申请日：2006-11-14

申请人： Muneo Tamura ,  Tetsuo Fujii

发明人： Muneo Tamura ,  Tetsuo Fujii

IPC分类号： H01L21/76

CPC分类号： B23K26/0608 ,  B23K26/0617 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/172 ,  B23K2103/50 ,  B28D5/00

摘要： A laser processing apparatus has one laser light source that simultaneously radiates laser beams with two wavelengths. Depth positions of focusing points for laser beams are gradually changed in a wafer. Three sets of modifying region groups, i.e., six layers of modifying region groups, are successively formed. One set of modifying region groups constitutes two layers and is formed at a time. The modifying region groups are separated, adjoined, or overlapped with each other along an estimated cut line of the wafer in a depth direction from a surface thereof.

摘要翻译： 激光加工装置具有同时辐射具有两个波长的激光束的一个激光光源。 激光束聚焦点的深度位置在晶片中逐渐变化。 连续形成3组修饰区域基团，即六层修饰区域基团。 一组修改区域组构成两层，一次形成。 修改区域组沿着晶片的从其表面的深度方向的估计切割线彼此分离，邻接或重叠。

公开(公告)号：US07911023B2

公开(公告)日：2011-03-22

申请号：US12289772

申请日：2008-11-04

申请人： Nozomu Akagi ,  Hitoshi Yamaguchi ,  Tetsuo Fujii

发明人： Nozomu Akagi ,  Hitoshi Yamaguchi ,  Tetsuo Fujii

IPC分类号： H01L21/70

CPC分类号： H01L29/7813 ,  H01L22/14 ,  H01L27/0921 ,  H01L27/0922 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766

摘要： A semiconductor apparatus is disclosed. The semiconductor apparatus includes a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor apparatus further includes multiple double-sided electrode elements each having a pair of electrodes located respectively on the first and second surfaces of the semiconductor substrate. A current flows between the first and second electrode. Each double-sided electrode element has a PN column region located in the semiconductor substrate. The semiconductor apparatus further includes an insulation trench that surrounds each of multiple double-sided electrode elements, and that insulates and separates the multiple double-sided electrode elements from each other.

摘要翻译： 公开了一种半导体装置。 半导体装置包括具有彼此相对的第一表面和第二表面的半导体衬底。 半导体装置还包括多个双面电极元件，每个双面电极元件分别具有位于半导体衬底的第一和第二表面上的一对电极。 A电流在第一和第二电极之间流动。 每个双面电极元件具有位于半导体衬底中的PN列区域。 半导体装置还包括围绕多个双面电极元件中的每一个的绝缘沟槽，并且使多个双面电极元件彼此绝缘和分离。

公开(公告)号：USRE42083E1

公开(公告)日：2011-02-01

申请号：US10315827

申请日：2002-12-10

申请人： Tetsuo Fujii

发明人： Tetsuo Fujii

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

摘要： A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

摘要翻译： 单晶硅基板（1）通过SiO 2膜（9）与单晶硅基板（8）接合，将单晶硅基板（1）制成薄膜。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5），使得电极短路 在容量型传感器中被阻止。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US20100229646A1

公开(公告)日：2010-09-16

申请号：US12722707

申请日：2010-03-12

申请人： Hirofumi HIGUCHI ,  Akitoshi Yamanaka ,  Tetsuo Fujii

发明人： Hirofumi HIGUCHI ,  Akitoshi Yamanaka ,  Tetsuo Fujii

IPC分类号： G01C19/56

CPC分类号： G01C19/5719

摘要： An oscillating angular speed sensor includes a detector, a driving portion, and a separating portion. When an angular speed is generated while the detector is driven to oscillate by the driving portion, Coriolis force is applied to the detector. Therefore, the angular speed is detected based on a capacitance variation in accordance with a variation of an interval between a movable electrode and a fixed electrode of the detector. The separating portion is distanced from the detector and the driving portion, and is configured to separate a first space accommodating the detector and a second space accommodating the driving portion.

摘要翻译： 振动角速度传感器包括检测器，驱动部分和分离部分。 当检测器被驱动部分驱动振荡时产生角速度时，将科里奥利力施加到检测器。 因此，根据检测器的可动电极和固定电极之间的间隔的变化，基于电容变化来检测角速度。 分离部分远离检测器和驱动部分，并且被配置为分离容纳检测器的第一空间和容纳驱动部分的第二空间。

公开(公告)号：USRE41213E1

公开(公告)日：2010-04-13

申请号：US10315859

申请日：2002-12-10

申请人： Tetsuo Fujii

发明人： Tetsuo Fujii

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

摘要： A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

摘要翻译： 单晶硅基板（1）通过SiO 2膜（9）与单晶硅基板（8）接合，将单晶硅基板（1）制成薄膜。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5），使得电极短路 在容量型传感器中被阻止。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

公开(公告)号：US07662668B2

公开(公告)日：2010-02-16

申请号：US11591496

申请日：2006-11-02

申请人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

发明人： Kazuhiko Sugiura ,  Kenichi Yokoyama ,  Muneo Tamura ,  Tetsuo Fujii ,  Makoto Asai

IPC分类号： H01L21/00

CPC分类号： H01L21/78 ,  B23K26/16 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2924/3025

摘要： A separating device for separating a semiconductor substrate includes: a cutting element for cutting the semiconductor substrate into a plurality of chips along with a cutting line on the semiconductor substrate; an adsorbing element for adsorbing a dust on a surface of the semiconductor substrate by using electrostatic force; and a static electricity generating element for generating static electricity and for controlling the static electricity in order to remove the dust from the adsorbing element.

摘要翻译： 用于分离半导体衬底的分离装置包括：用于将半导体衬底与半导体衬底上的切割线一起切割成多个芯片的切割元件; 用于通过使用静电力吸附在所述半导体衬底的表面上的灰尘的吸附元件; 以及用于产生静电并用于控制静电以便从吸附元件去除灰尘的静电发生元件。

公开(公告)号：US07540199B2

公开(公告)日：2009-06-02

申请号：US11808774

申请日：2007-06-12

申请人： Tetsuo Fujii ,  Eishi Kawasaki

发明人： Tetsuo Fujii ,  Eishi Kawasaki

IPC分类号： G01R27/26

CPC分类号： G01L9/0042 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81B2207/07 ,  B81C2203/0118 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

摘要： A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

摘要翻译： 用于检测物理量的物理量传感器包括：具有第一物理量检测元件的第一基板; 具有第二物理量检测元件的第二基板，其中所述第二基板接触所述第一基板; 以及设置在第一基板和第二基板之间的容纳空间。 第一物理量检测元件设置在容纳空间中。 第一物理量检测元件被第一基板和第二基板保护，因为第一物理量检测元件被密封在容纳空间中。

公开(公告)号：US20090008728A1

公开(公告)日：2009-01-08

申请号：US12213711

申请日：2008-06-24

申请人： Tetsuo Fujii ,  Kazuhiko Sugiura

发明人： Tetsuo Fujii ,  Kazuhiko Sugiura

IPC分类号： H01L29/84 ,  H01L21/58

CPC分类号： B81B7/007 ,  B81B2207/07 ,  B81B2207/097 ,  B81C2203/0118 ,  G01P15/0802 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/16145 ,  H01L2924/00014

摘要： A semiconductor device includes: a sensor element having a plate shape with a surface and including a sensor structure disposed in a surface portion of the sensor element; and a plate-shaped cap element bonded to the surface of the sensor element. The cap element has a wiring pattern portion facing the sensor element. The wiring pattern portion connects an outer periphery of the surface of the sensor element and the sensor structure so that the sensor structure is electrically coupled with an external element via the outer periphery. The sensor element does not have a complicated multi-layered structure, so that the sensor element is simplified. Further, the dimensions of the device are reduced.

摘要翻译： 半导体器件包括：传感器元件，其具有表面的板形，并且包括设置在传感器元件的表面部分中的传感器结构; 以及结合到传感器元件的表面的板状盖元件。 盖元件具有面向传感器元件的布线图案部分。 布线图形部分连接传感器元件的表面的外周和传感器结构，使得传感器结构经由外周与外部元件电耦合。 传感器元件不具有复杂的多层结构，因此传感器元件被简化。 此外，装置的尺寸减小。

公开(公告)号：US07466000B2

公开(公告)日：2008-12-16

申请号：US11268524

申请日：2005-11-08

申请人： Tetsuo Fujii

发明人： Tetsuo Fujii

IPC分类号： G01P15/125

CPC分类号： B81B7/0058 ,  B81B2207/012 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a first substrate including first, second and third layers; a second substrate; and a loop bump. The first and second substrates provides an electric device and physical quantity sensor. The first layer is a shield for protecting the electric device and physical quantity sensor. The physical quantity sensor includes a movable portion surrounded by a first loop layer of the third layer. The loop bump is disposed between the first and second substrates and surrounds the movable portion, and is electrically coupled with the first loop layer so that the loop bump, first loop layer, first layer and second substrate shield the electric device and physical quantity sensor. The first substrate includes inner and outer pads which are electrically coupled through a wire layer which is electrically insulated from the loop bump, so that a signal from the movable portion is output to and external circuit.

摘要翻译： 半导体器件包括：第一衬底，包括第一层，第二层和第三层; 第二基板; 和一个环形凸起。 第一和第二基板提供电气装置和物理量传感器。 第一层是用于保护电气设备和物理量传感器的屏蔽。 物理量传感器包括由第三层的第一环层包围的可动部分。 环形突起设置在第一和第二基板之间并且围绕可动部分，并且与第一环路层电耦合，使得环形凸起，第一环路层，第一层和第二基板屏蔽电气设备和物理量传感器。 第一衬底包括通过与环形凸起电绝缘的导线层电耦合的内部和外部焊盘，使得来自可移动部分的信号被输出到外部电路。

公开(公告)号：USRE40347E1

公开(公告)日：2008-06-03

申请号：US10123220

申请日：2002-04-17

申请人： Tetsuo Fujii

发明人： Tetsuo Fujii

IPC分类号： G01P15/125

CPC分类号： G01P15/125 ,  G01P15/0802 ,  G01P2015/0817

摘要： A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

摘要翻译： 单晶硅衬底（1）通过SiO 2膜（9）结合到单晶硅衬底（8），并且将单晶硅衬底（1）制成薄膜 。 在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底 在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。 此外，悬臂（13）的表面和与悬臂（13）相对的单晶硅衬底（1）的一部分分别涂覆有SiO 2膜（5） ，从而在容量型传感器中防止电极短路。 此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。