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123 条记录 (耗时 0.033 秒)

    Image sensor, method and design structure including non-planar reflector
    42.
    发明授权
    Image sensor, method and design structure including non-planar reflector 失效
    图像传感器，方法和设计结构包括非平面反射器

    公开(公告)号：US08647913B2

    公开(公告)日：2014-02-11

    申请号：US13614210

    申请日：2012-09-13

    申请人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  John J. Ellis-Monaghan

    发明人： James William Adkisson ,  Jeffrey Peter Gambino ,  Robert Kenneth Leidy ,  John J. Ellis-Monaghan

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14643 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685

    摘要： A solid state image sensor, a method for fabricating the solid state image sensor and a design structure for fabricating the solid state image sensor structure include a substrate that in turn includes a photosensitive region. Also included within solid state image sensor is a non-planar reflector layer located over a side of the photosensitive region and the substrate opposite an incoming radiation side of the photosensitive region and the substrate. The non-planar reflector layer is shaped and positioned to reflect uncaptured incident radiation back into the photosensitive region while avoiding optical cross-talk with an additional photosensitive region laterally separated within the substrate.

    摘要翻译： 固态图像传感器，制造固态图像传感器的方法和用于制造固态图像传感器结构的设计结构包括依次包括感光区域的基板。 还包括在固态图像传感器内的非平面反射器层位于感光区域和基板的与感光区域和基板的入射辐射侧相对的一侧上。 非平面反射器层被成形和定位成将未捕获的入射辐射反射回光敏区域，同时避免与衬底内横向分离的附加光敏区域的光学串扰。

    Variable focus point lens
    44.
    发明授权
    Variable focus point lens 有权
    可变焦点镜头

    公开(公告)号：US08238032B2

    公开(公告)日：2012-08-07

    申请号：US12708561

    申请日：2010-02-19

    申请人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Kirk David Peterson ,  Jed Hickory Rankin

    发明人： John Joseph Ellis-Monaghan ,  Jeffrey Peter Gambino ,  Kirk David Peterson ,  Jed Hickory Rankin

    IPC分类号： G02B3/12

    CPC分类号： G02B3/14

    摘要： A variable focal point lens includes a transparent tank, which comprises a transparent enclosure containing a transparent flexible membrane separating the inner volume of the transparent tank into an upper tank portion and a lower tank portion. The upper tank portion and the lower tank portion contain liquids having different indices of refraction. The transparent flexible membrane is electrostatically displaced to change the thicknesses of the first tank portion and the second tank portion in the path of the light, thereby shifting the focal point of the lens axially and/or laterally. The electrostatic displacement of the membrane may be effected by a fixed charge in the membrane and an array of enclosure-side conductive structures on the transparent enclosure, or an array of membrane-side conductive structures on the transparent membrane and an array of enclosure-side conductive structures.

    摘要翻译： 可变焦点透镜包括透明容器，透明容器包括透明的外壳，该透明外壳包含将透明容器的内部容积分隔成上部容器部分和下部容器部分的透明柔性膜。 上罐部分和下罐部分含有不同折射率的液体。 透明柔性膜被静电移位以改变光路中的第一罐部分和第二罐部分的厚度，从而轴向和/或横向地移动透镜的焦点。 膜的静电位移可以通过膜中的固定电荷和透明外壳上的封闭侧导电结构阵列，或透明膜上的膜侧导电结构阵列和外壳侧阵列 导电结构。

    Optically transparent wires for secure circuits and methods of making same
    45.
    发明授权
    Optically transparent wires for secure circuits and methods of making same 有权
    用于安全电路的光学透明导线及其制造方法

    公开(公告)号：US08207609B2

    公开(公告)日：2012-06-26

    申请号：US13195255

    申请日：2011-08-01

    申请人： Stephen Peter Ayotte ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Kimball M. Watson

    发明人： Stephen Peter Ayotte ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Kimball M. Watson

    IPC分类号： H01L21/00

    CPC分类号： H01L23/522 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76888 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/57 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and a method. The method includes: forming a dielectric layer on a substrate; forming electrically conductive first and second wires in the dielectric layer, top surfaces of the first and second wires coplanar with a top surface of the dielectric layer; and either (i) forming an electrically conductive third wire on the top surface of the dielectric layer, and over the top surfaces of the first and second wires, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy or (ii) forming an electrically conductive third wire between the top surface of the dielectric layer and the substrate, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy.

    摘要翻译： 一种结构和方法。 该方法包括：在基板上形成电介质层; 在所述电介质层中形成导电的第一和第二布线，所述第一和第二布线的顶表面与所述电介质层的顶表面共面; 并且（i）在介电层的顶表面上形成导电的第三导线，并且在第一和第二导线的顶表面之上，第三导线与第一和第二导线中的每一个电接触，第三导线不可检测 通过光学显微镜检查或（ii）在电介质层的顶表面和衬底之间形成导电的第三线，第三电线电接触第一和第二电线中的每一个，第三电线不能通过光学显微镜检测。

    OPTICALLY TRANSPARENT WIRES FOR SECURE CIRCUITS AND METHODS OF MAKING SAME
    46.
    发明申请
    OPTICALLY TRANSPARENT WIRES FOR SECURE CIRCUITS AND METHODS OF MAKING SAME 有权
    用于安全电路的光学透明线及其制造方法

    公开(公告)号：US20110284280A1

    公开(公告)日：2011-11-24

    申请号：US13195255

    申请日：2011-08-01

    申请人： Stephen Peter Ayotte ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Kimball M. Watson

    发明人： Stephen Peter Ayotte ,  Jeffrey Peter Gambino ,  Timothy Dooling Sullivan ,  Kimball M. Watson

    IPC分类号： H05K1/11

    CPC分类号： H01L23/522 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76888 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53257 ,  H01L23/57 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A structure and a method. The method includes: forming a dielectric layer on a substrate; forming electrically conductive first and second wires in the dielectric layer, top surfaces of the first and second wires coplanar with a top surface of the dielectric layer; and either (i) forming an electrically conductive third wire on the top surface of the dielectric layer, and over the top surfaces of the first and second wires, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy or (ii) forming an electrically conductive third wire between the top surface of the dielectric layer and the substrate, the third wire electrically contacting each of the first and second wires, the third wire not detectable by optical microscopy.

    摘要翻译： 一种结构和方法。 该方法包括：在基板上形成电介质层; 在所述电介质层中形成导电的第一和第二布线，所述第一和第二布线的顶表面与所述电介质层的顶表面共面; 并且（i）在介电层的顶表面上形成导电的第三导线，并且在第一和第二导线的顶表面之上，第三线电连接第一和第二导线中的每一个，第三线不可检测 通过光学显微镜检查或（ii）在电介质层的顶表面和衬底之间形成导电的第三线，第三电线电接触第一和第二电线中的每一个，第三电线不能通过光学显微镜检测。

    Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes
    48.
    发明授权
    Semiconductor transistors having high-K gate dielectric layers and metal gate electrodes 失效
    具有高K栅极电介质层和金属栅电极的半导体晶体管

    公开(公告)号：US07790559B2

    公开(公告)日：2010-09-07

    申请号：US12038195

    申请日：2008-02-27

    申请人： James William Adkisson ,  Michael Patrick Chudzik ,  Jeffrey Peter Gambino ,  Hongwen Yan

    发明人： James William Adkisson ,  Michael Patrick Chudzik ,  Jeffrey Peter Gambino ,  Hongwen Yan

    IPC分类号： H01L21/336

    CPC分类号： H01L29/1037 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/42368 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

    摘要： A semiconductor structure and a method for forming the same. The semiconductor structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a final gate dielectric region, (iv) a final gate electrode region, and (v) a first gate dielectric corner region. The final gate dielectric region (i) includes a first dielectric material, and (ii) is disposed between and in direct physical contact with the channel region and the final gate electrode region. The first gate dielectric corner region (i) includes a second dielectric material that is different from the first dielectric material, (ii) is disposed between and in direct physical contact with the first source/drain region and the final gate dielectric region, (iii) is not in direct physical contact with the final gate electrode region, and (iv) overlaps the final gate electrode region in a reference direction.

    摘要翻译： 半导体结构及其形成方法。 半导体结构包括（i）半导体衬底，其包括沟道区，（ii）半导体衬底上的第一和第二源极/漏极区，（iii）最终栅极电介质区，（iv）最终栅电极区和 （v）第一栅介质角区域。 最后的栅介质区域（i）包括第一电介质材料，和（ii）设置在沟道区域和最终栅电极区域之间并与其直接物理接触。 第一栅介质角区域（i）包括与第一介电材料不同的第二电介质材料，（ii）设置在第一源极/漏极区域和最终栅极电介质区域之间并与之直接物理接触;（iii） ）不与最终栅电极区域直接物理接触，并且（iv）在参考方向上与最终栅电极区域重叠。

    HIGH POWER DEVICE ISOLATION AND INTEGRATION
    49.
    发明申请
    HIGH POWER DEVICE ISOLATION AND INTEGRATION 有权
    高功率器件隔离和集成

    公开(公告)号：US20100207233A1

    公开(公告)日：2010-08-19

    申请号：US12768877

    申请日：2010-04-28

    申请人： Jeffrey Peter Gambino ,  Steven Howard Voldman ,  Michael Joseph Zierak

    发明人： Jeffrey Peter Gambino ,  Steven Howard Voldman ,  Michael Joseph Zierak

    IPC分类号： H01L29/06 ,  H01L27/12

    CPC分类号： H01L21/76229 ,  H01L21/76232 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/088 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7835

    摘要： A structure and method of fabricating the structure. The structure including: a dielectric isolation in a semiconductor substrate, the dielectric isolation extending in a direction perpendicular to a top surface of the substrate into the substrate a first distance, the dielectric isolation surrounding a first region and a second region of the substrate, a top surface of the dielectric isolation coplanar with the top surface of the substrate; a dielectric region in the second region of the substrate; the dielectric region extending in the perpendicular direction into the substrate a second distance, the first distance greater than the second distance; and a first device in the first region and a second device in the second region, the first device different from the second device, the dielectric region isolating a first element of the second device from a second element of the second device.

    摘要翻译： 一种制造结构的结构和方法。 所述结构包括：在半导体衬底中的介电隔离，所述电介质隔离部在垂直于所述衬底的顶表面的方向上延伸到所述衬底中的第一距离，围绕所述衬底的第一区域和所述第二区域的介电隔离， 介质隔离的顶表面与基底的顶表面共面; 在所述基板的所述第二区域中的介电区域; 所述电介质区域沿垂直方向延伸到所述衬底中第二距离，所述第一距离大于所述第二距离; 以及第一区域中的第一器件和第二区域中的第二器件，所述第一器件不同于所述第二器件，所述电介质区域将所述第二器件的第一元件与所述第二器件的第二元件隔离。