公开(公告)号：US6030449A

公开(公告)日：2000-02-29

申请号：US868888

申请日：1997-06-04

申请人： Tsuguo Fukuda ,  Norio Takeda

发明人： Tsuguo Fukuda ,  Norio Takeda

IPC分类号： G02F1/09 ,  C30B15/00 ,  C30B29/28 ,  H01F10/24 ,  H01F41/28 ,  C30B19/00 ,  C01F17/00

CPC分类号： C30B15/00 ,  C30B29/28

摘要： A garnet crystal for growing a substrate is used in manufacturing a magneto-optic element. The garnet is manufactured by a Czochralski method and has a chemical structure represented by La.sub.8-(x+y) Yb.sub.x Ga.sub.y O.sub.12 wherein x has the range 1.0.ltoreq.x.ltoreq.3.0, y has the range 2.5.ltoreq.y.ltoreq.4.5, and (x+y) has the range 5.0.ltoreq.(x+y).ltoreq.6.5. The garnet crystal is grown from a melt prepared by heating a mixture of gadolinium oxide, ytterbium oxide, and gallium oxide in a crucible, the oxides being mixed together in a weight proportion such that the atomic proportion is La:Yb:Ga=3:p:q wherein p has the range 1.0.ltoreq.p.ltoreq.3.0 and q has the range 2.0.ltoreq.q.ltoreq.4.5.

摘要翻译： 用于生长衬底的石榴石晶体用于制造磁光元件。 石榴石是通过切克劳斯（Czochralski）法制造的，具有由La8-（x + y）YbxGayO12表示的化学结构，其中x具有1.0≤x≤3.0的范围，y的范围是2.5≤y= 4.5和（x + y）的范围为5.0

公开(公告)号：US5919304A

公开(公告)日：1999-07-06

申请号：US702157

申请日：1996-08-23

申请人： Minoru Imaeda ,  Katsuhiro Imai ,  Tsuguo Fukuda

发明人： Minoru Imaeda ,  Katsuhiro Imai ,  Tsuguo Fukuda

IPC分类号： G02F1/35 ,  C30B15/00 ,  C30B15/08 ,  C30B15/20 ,  C30B29/30 ,  G02F1/355 ,  H01S3/109

CPC分类号： C30B15/08 ,  C30B15/00 ,  C30B29/30 ,  Y10S117/91 ,  Y10T117/1036 ,  Y10T117/1044

摘要： When producing an oxide-series single crystal by continuously pulling downwardly by .mu. pulling down method, the composition of the single crystal can properly and quickly controlled to continuously produce the single crystal of a constant composition by changing the pulling rate of the single crystal. Preferably, the pulling rate is 20-300 mm/hr, and the pulling rate is decreased with the proceeding of growing of the single crystal.

摘要翻译： 当通过mu拉下法连续拉下来生产氧化物系单晶时，单晶的组成可以通过改变单晶的拉伸速度来适当且快速地控制，以连续地制备具有恒定组成的单晶。 优选地，拉伸速度为20-300mm / hr，随着单晶的生长的进行，拉伸速率降低。

公开(公告)号：US5554219A

公开(公告)日：1996-09-10

申请号：US376896

申请日：1995-01-23

申请人： Tsuguo Fukuda ,  Peter Rudolph ,  Kazuyuki Umezu

发明人： Tsuguo Fukuda ,  Peter Rudolph ,  Kazuyuki Umezu

IPC分类号： C30B11/00 ,  C30B11/14 ,  C30B29/48

CPC分类号： C30B11/14 ,  C30B11/00 ,  C30B29/48

摘要： When producing a single-crystal bulk ZnSe from a melt by a high-pressure melt technique in a vertical Bridgman (VB) furnace or a vertical gradient freezing (VGF) furnace, preliminarily grown polycrystalline ZnSe (which may be a crystal solely composed of twins) is used as a seed and, after melting the starting ZnSe material and part of the seed, a twin-free ZnSe bulk crystal is grown on the seed; alternatively, polycrystalline ZnSe is grown at the tip of the growing crystal and part of it is melted, followed by growing a single crystal on that polycrystal to produce a twin-free, high-purity ZnSe bulk crystal. In either way, the process assures that twin-free single crystals of bulk ZnSe can be produced with good reproducibility without adding dopants or using any materials that are difficult to obtain.

摘要翻译： 在垂直布里奇曼（VB）炉或垂直梯度冷冻（VGF）炉中通过高压熔融技术从熔体中生产单晶体ZnSe，预生长的多晶ZnSe（其可以是仅由双胞胎组成的晶体 ）用作种子，并且在熔化起始的ZnSe材料和部分种子之后，在种子上生长一个双自由的ZnSe本体晶体; 或者，多晶ZnSe在生长晶体的尖端生长，并且其一部分被熔化，随后在该多晶体上生长单晶以产生双自由的高纯度ZnSe块状晶体。 以任一方式，该方法确保可以在不添加掺杂剂或使用难以获得的任何材料的情况下以良好的再现性制备体积ZnSe的双体单晶。

公开(公告)号：US5517942A

公开(公告)日：1996-05-21

申请号：US408390

申请日：1995-03-22

申请人： Tsuguo Fukuda ,  Yasunori Okano ,  Tatsuo Kawaguchi ,  Minoru Imaeda

发明人： Tsuguo Fukuda ,  Yasunori Okano ,  Tatsuo Kawaguchi ,  Minoru Imaeda

IPC分类号： G02F1/03 ,  C30B19/00 ,  C30B19/02 ,  C30B29/30 ,  G02B6/132 ,  C30B19/12

CPC分类号： G02B6/132 ,  C30B19/02 ,  C30B29/30

摘要： A process for producing optoelectric articles, in which an optoelectric single crystal film is formed on an optoelectric single crystal substrate, is disclosed. The optoelectric single crystal substrate is exposed to a liquid phase in a supercooling state of a melt including a solute and a melting medium, and the optoelectric single crystal film is formed by a liquid phase epitaxial process. In this case, a viscosity of the liquid phase is set to 75%.about.95% preferably 75%.about.90% with respect to a viscosity at which a degree of supercooling of the liquid phase is zero.

摘要翻译： 公开了一种在光电单晶衬底上形成光电单晶膜的光电器件的制造方法。 将光电单晶基板暴露于包含溶质和熔融介质的熔融物的过冷状态的液相，通过液相外延工艺形成光电单晶膜。 在这种情况下，相对于液相的过冷度为零的粘度，液相的粘度被设定为75％差异95％，优选75％差异90％。

公开(公告)号：US4144117A

公开(公告)日：1979-03-13

申请号：US776207

申请日：1977-03-10

申请人： Tsuguo Fukuda ,  Hitoshi Hirano

发明人： Tsuguo Fukuda ,  Hitoshi Hirano

IPC分类号： C01G35/00 ,  C30B15/00 ,  C30B29/30 ,  H01L41/18 ,  H01L41/22 ,  H01L41/39 ,  B01J17/18

CPC分类号： C30B15/00 ,  C30B29/30 ,  Y10S117/90 ,  Y10S117/906 ,  Y10S117/91

摘要： A method for producing a lithium tantalate single crystal comprises the steps of preparing a melt consisting essentially of lithium tantalate in a platinum-rhodium crucible including 20 to 40 weight percent of rhodium, and growing a lithium tantalate single crystal from the melt in an oxidizing atmosphere, for example, in the atmosphere.

摘要翻译： 一种生产钽酸锂单晶的方法包括以下步骤：在包含20至40重量％的铑的铂铑坩埚中制备基本上由钽酸锂组成的熔体，并在氧化气氛中从熔体中生长钽酸锂单晶 ，例如在大气中。

公开(公告)号：US08920677B2

公开(公告)日：2014-12-30

申请号：US13703713

申请日：2011-06-17

申请人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

发明人： Masataka Kano ,  Akira Wakamiya ,  Kohei Yamanoi ,  Toshihiko Shimizu ,  Nobuhiko Sarukura ,  Dirk Ehrentraut ,  Tsuguo Fukuda

IPC分类号： C09K11/54 ,  G01T1/20 ,  G01T1/202 ,  G01T1/161 ,  G01T1/00 ,  C09K11/55 ,  C09K11/62 ,  C30B7/10 ,  C30B29/16 ,  G21K4/00

CPC分类号： G01T1/2023 ,  C09K11/54 ,  C09K11/55 ,  C09K11/623 ,  C30B7/10 ,  C30B29/16 ,  G01T1/003 ,  G01T1/202 ,  G21K4/00 ,  G21K2004/06

摘要： A scintillator material is made of a zinc-oxide single crystal grown on a +C surface or a −C surface of a plate-shaped seed crystal of zinc oxide including a C surface as a main surface. The zinc-oxide single crystal contains In and Li. In response to an incident radiation, the scintillator material emits fluorescence of less than 20-ps fluorescence lifetime.

摘要翻译： 闪烁体材料由生长在包含C面作为主面的氧化锌的板状晶种的+ C面或-C面的生长的氧化锌单晶构成。 氧化锌单晶含有In和Li。 响应于入射辐射，闪烁体材料发射小于20ps荧光寿命的荧光。

公开(公告)号：US20130003779A1

公开(公告)日：2013-01-03

申请号：US13518194

申请日：2010-12-24

申请人： Tsuguo Fukuda ,  Mitsuru Sato ,  Junichi Kojima ,  Yukinaga Koike

发明人： Tsuguo Fukuda ,  Mitsuru Sato ,  Junichi Kojima ,  Yukinaga Koike

IPC分类号： G01K11/22 ,  G01H13/00

CPC分类号： G01K7/32 ,  G01K1/024

摘要： There is provided a wireless measuring apparatus that efficiently measures the frequency characteristics of a sensor unit mounted on an object to be measured. The wireless measuring apparatus is a wireless measuring apparatus that measures the frequency characteristics of a sensor unit (10) mounted on an object (40) to be measured, including the sensor unit (10) having a piezo-resonator (11), an antenna (20) that forms a circuitry with the sensor unit (10), and a measuring element (30) that supplies high frequency electricity changed in different frequency to the circuitry and measures the frequency characteristics of the reflected electricity strength received from the circuitry.

摘要翻译： 提供了一种无线测量装置，其有效地测量安装在被测量物体上的传感器单元的频率特性。 无线测量装置是测量安装在待测物体（40）上的传感器单元（10）的频率特性的无线测量装置，包括具有压电谐振器（11）的传感器单元（10），天线 （20），其形成具有所述传感器单元（10）的电路;以及测量元件（30），其向所述电路提供以不同频率改变的高频电力并测量从所述电路接收的反射电力的频率特性。

公开(公告)号：US08333838B2

公开(公告)日：2012-12-18

申请号：US12805786

申请日：2010-08-19

申请人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

发明人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

IPC分类号： C30B15/08

CPC分类号： C30B15/08 ,  C01B9/08 ,  C30B29/12 ,  Y10T117/10

摘要： Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

摘要翻译： 提供了能够在非常短的时间内产生氟化物晶体的装置，以及适用于使用该装置生产氟化物晶体的方法。 该设备包括一个室，一个窗户材料等，并且被改造成使得它可以从室中排出空气以在那里提供高度的真空度。 该装置还包括坩埚，其底部具有穿孔。 调整穿孔的毛细管部分以促进晶种与熔体的接触。 通过使用该装置，可以在短时间内稳定地生产高质量的氟化物单晶。

公开(公告)号：US07498579B2

公开(公告)日：2009-03-03

申请号：US10569488

申请日：2004-08-25

申请人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga ,  Hikaru Koike

发明人： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga ,  Hikaru Koike

IPC分类号： G01T1/20 ,  C09K11/02

CPC分类号： G01T1/2023 ,  A61B6/037 ,  A61B6/4258

摘要： A scintillator, characterized in that it comprises crystals of Pr1-xCexF3 [wherein 0

摘要翻译： 闪烁体，其特征在于其包含Pr1-xCexF3 [其中0

公开(公告)号：US20080213163A1

公开(公告)日：2008-09-04

申请号：US12034949

申请日：2008-02-21

申请人： Toshiro Mabuchi ,  Naoto Mochizuki ,  Teruhiko Nawata ,  Hiroki Sato ,  Tsuguo Fukuda

发明人： Toshiro Mabuchi ,  Naoto Mochizuki ,  Teruhiko Nawata ,  Hiroki Sato ,  Tsuguo Fukuda

IPC分类号： C01B9/08 ,  C30B11/00

CPC分类号： C30B29/12 ,  C30B15/00 ,  C30B33/02 ,  G02B1/02

摘要： Disclosed is a method for producing a BaLiF3 single crystal by a melt growth method, wherein a raw material melt for said single crystal comprising BaF2, LiF and MgF2 in such amounts that the Ba/(Ba+Li+Mg) ratio by mol is in the range of 0.35 to 0.48 and the Mg/(Li+Mg) ratio by mol is in the range of 0.001 to 0.03. In the case where a BaLiF3 single crystal that is useful as a last lens of immersion exposure tools for producing a semiconductor is produced by a melt growth method using, as a raw material, a melt containing excess Li, the Li component is liable to be precipitated to make the resulting BaLiF3 single crystal opaque, and the light transmittance is deteriorated, but such problems can be solved by the present invention.

摘要翻译： 公开了一种通过熔融生长法制备BaLiF 3 N 3单晶的方法，其中包含BaF 2 N，LiF和MgF 3的单晶的原料熔体， 2（Ba +（Ba + Li + Mg）的摩尔比在0.35〜0.48的范围内，Mg /（Li + Mg）的摩尔比在0.001〜0.03的范围内 。 在用作半导体制造用浸渍曝光工具的最后一个透镜的BaLiF 3 N 3单晶的熔融生长方法中，使用作为原料的含有过量的Li ，Li成分容易析出，使得BaLiF 3 N 3单晶不透明，透光率劣化，但是本发明可以解决上述问题。