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公开(公告)号：US5474021A
公开(公告)日：1995-12-12
申请号：US125482
申请日：1993-09-22
申请人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
发明人： Takashi Tsuno , Takahiro Imai , Naoji Fujimori
摘要： A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions:0.5.ltoreq.X.ltoreq.2.00.3.ltoreq.Y.ltoreq.2.0Z.ltoreq.1.0X=([C]/[H]).times.100% IY=([C]-[O]/[H]).times.100% IIZ=([O]/[H]).times.100% IIIwhere [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively. In this way it is possible to obtain vapor-deposited diamond having favorable characteristics.
摘要翻译： 制备了主要由{100}平面组成的主表面的多个单晶金刚石板。 金刚石板被布置成使得各个主表面彼此基本齐平。 在这种布置中，相邻板之间的主表面的晶体取向形成的角度不大于5°，相邻板之间的间隙不大于30μm，并且主表面的高度差不大 相邻板块之间大于30微米。 为了确保这种布置，多个金刚石板通过在金属板上沉积金刚石形成单个大金刚石板而彼此接合。 在这种接合之后，抛光金刚石板的主表面以消除台阶或高度差异。 然后，金刚石从气相在外延生长在大金刚石板的抛光表面上。 在该气相中，由下列方程式I，II和III得到的比例X，Y和Z分别满足以下条件：0.5≤X≤2.00.3
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公开(公告)号：US5372799A
公开(公告)日：1994-12-13
申请号：US425833
申请日：1989-10-20
申请人： Tadafumi Adschiri , Junji Degawa , Takahiro Imai , Naoji Fujimori , Takehiko Furusawa, deceased
发明人： Tadafumi Adschiri , Junji Degawa , Takahiro Imai , Naoji Fujimori , Takehiko Furusawa, deceased
CPC分类号： C23C16/442 , B01J8/42 , C30B25/00 , C30B29/04 , B01J2219/0894
摘要： Granular diamond suitable for use as an abrasive grain for polishing is synthesized from gaseous phase by a process for the synthesis of granular diamond, comprising subjecting a mixed gas containing an organic compound and hydrogen to a treatment to form plasma and depositing diamond on substrate grains dispersed and fluidized in the resulting plasma space, characterized in that the substrate grains are dispersed and fluidized by the mixed gas fed at a flow rate of at least the terminal velocity of the grains and an AC or DC electric field is applied to a zone whose grain concentration in the space is in the range of 1 to 20% by volume.
摘要翻译： 适合用作研磨磨粒的颗粒状金刚石是通过合成粒状金刚石的方法由气相合成的，包括使含有有机化合物和氢气的混合气体进行处理以形成等离子体并将金刚石沉积在分散的基质颗粒上 并在所得到的等离子体空间中流化，其特征在于，通过以至少晶粒的末端速度的流量供给的混合气体使基板颗粒分散和流化，并且将AC或DC电场施加到其颗粒 该空间中的浓度在1〜20体积％的范围内。
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公开(公告)号：US5270028A
公开(公告)日：1993-12-14
申请号：US884891
申请日：1992-05-18
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
CPC分类号： C23C16/272 , C23C16/274 , C23C16/277 , C30B25/105
摘要： A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.
摘要翻译： 通过包括以满足以下等式的摩尔比引入氢（A），惰性气体（B）和含碳化合物（C）的混合物的方法制备具有改进性能的金刚石：
IMAGE>产生一个低压等离子体，其中一个直流电流和一个交流电流场在5到760乇的压力下形成金刚石在衬底上，其中在产生等离子体的地方和一个地方之间没有实质性的差异 其中金刚石形成在基底上。 -
公开(公告)号：US5173612A
公开(公告)日：1992-12-22
申请号：US744332
申请日：1991-08-13
申请人： Takahiro Imai , Naoji Fujimori
发明人： Takahiro Imai , Naoji Fujimori
CPC分类号： H01J35/18 , H01J2235/183
摘要： An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.
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公开(公告)号：US4982243A
公开(公告)日：1991-01-01
申请号：US329825
申请日：1989-03-28
申请人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
发明人： Hideaki Nakahata , Takahiro Imai , Hiromu Shiomi , Naoji Fujimori
IPC分类号： H01L29/16 , H01L21/205 , H01L29/04 , H01L29/423 , H01L29/47 , H01L29/861 , H01L29/868 , H01L29/872
CPC分类号： H01L33/40 , H01L29/045 , H01L29/47 , H01L29/872 , H01L33/0033 , H01L33/34
摘要： A schottky contact which comprises a single crystal diamond substrate, an epitaxial diamond layer formed on said substrate and a schottky electrode layer formed on said epitaxial diamond layer, wherein said substrate has at least one polished surface which inclines at an angle of not larger than 10.degree. to a (100) plane and said epitaxial diamond layer is formed on said surface, provides a device which has good thermal resistance and environmental resistance and which device can be easily highly integrated.
摘要翻译： 一种肖特基接触，其包括单晶金刚石基底，形成在所述基底上的外延金刚石层和形成在所述外延金刚石层上的肖特基电极层，其中所述基底具有至少一个抛光表面，其倾斜不大于10° DEG至（100）面，并且所述外延金刚石层形成在所述表面上，提供具有良好耐热性和耐环境性的器件，并且该器件可以容易地高度集成。
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46.发明授权Method for manufacturing diamond monocrystal having a thin film, and diamond monocrystal having a thin film 有权具有薄膜的金刚石单晶的制造方法和具有薄膜的金刚石单晶公开(公告)号：US08119241B2
公开(公告)日：2012-02-21
申请号：US12282137
申请日：2007-12-26
IPC分类号： C30B29/04
CPC分类号： C30B29/04 , C30B25/02 , C30B25/105 , H01L21/02376 , H01L21/02433 , H01L21/02527 , H01L21/02576 , H01L21/02609 , H01L21/0262 , Y10T428/24355 , Y10T428/30
摘要： A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.
摘要翻译： 一种在{111}单晶衬底的主表面上在300K下比电阻为300Ω·cm-cm或更小的低电阻磷掺杂外延薄膜的方法，其中磷原子/碳原子比 为3％以上，主偏离角为0.50°以上的主表面。 具有低电阻磷掺杂金刚石外延薄膜的金刚石单晶使得薄膜表面相对于{111}面具有0.50°或更大的偏角，并且低电阻磷掺杂金刚石外延薄膜的电阻率 电阻磷掺杂金刚石外延薄膜在300K时为300＆OHgr; cm以下。
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公开(公告)号：US20110223044A1
公开(公告)日：2011-09-15
申请号：US13039226
申请日：2011-03-02
申请人： Yoshinobu Nakayama , Takahiro Imai
发明人： Yoshinobu Nakayama , Takahiro Imai
CPC分类号： H01L41/042 , H01L41/0973
摘要： A transformer T1 receives a sinusoidal signal on the primary side. The transformer T1 is provided with a terminal 3, a terminal 5, and a center tap 4 on the secondary side. The center tap 4 is connected to the anode of a diode D1. The cathode of the diode D1 is connected to the cathode of a diode D2 and one electrode of a capacitor C1. The other electrode of the capacitor C1 is connected to the anode of a diode D3 and a connection point of the second electrode of a piezoelectric element C2 and the first electrode of a piezoelectric element C3. The second electrode of the piezoelectric element C3 is connected to the terminal 3. The first electrode of the piezoelectric element C2 is connected to the cathode of the diode D3, the anode of the diode D2, and the terminal 5.
摘要翻译： 变压器T1在初级侧接收正弦信号。 变压器T1在次级侧设置有端子3，端子5和中心抽头4。 中心抽头4连接到二极管D1的阳极。 二极管D1的阴极连接到二极管D2的阴极和电容器C1的一个电极。 电容器C1的另一个电极连接到二极管D3的阳极和压电元件C2的第二电极和压电元件C3的第一电极的连接点。 压电元件C3的第二电极连接到端子3.压电元件C2的第一电极连接到二极管D3的阴极，二极管D2的阳极和端子5。
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公开(公告)号：US20110015012A1
公开(公告)日：2011-01-20
申请号：US12827497
申请日：2010-06-30
IPC分类号： F16H61/662
CPC分类号： F16H59/38 , F16H9/18 , F16H37/022 , F16H2037/023 , G01P3/443
摘要： A belt-drive CVT includes a pair of pulleys, each of which has a stationary pulley and a movable pulley that moves toward or away from the stationary pulley in an axial direction of the pulley, a belt that is wound around the pair of pulleys and a rotation state detecting device for detecting rotation of the pulley. The rotation state detecting device has a tone wheel that rotates integrally with the pulley and a sensor that faces the tone wheel. The tone wheel has a cylinder portion that extends along a moving direction of the movable pulley. The cylinder portion is provided with a plurality of detection portions which are arranged at regular intervals in a circumferential direction throughout an entire circumference of the cylinder portion and which extend along the moving direction of the movable pulley.
摘要翻译： 皮带驱动CVT包括一对皮带轮，每一个滑轮具有固定滑轮和沿滑轮的轴向方向朝静止滑轮移动或远离固定皮带轮的可动皮带轮，缠绕在一对皮带轮上的皮带以及 用于检测滑轮的旋转的旋转状态检测装置。 旋转状态检测装置具有与滑轮一体旋转的音轮和面向色轮的传感器。 音轮具有沿着可动滑轮的移动方向延伸的圆筒部。 气缸部分设置有多个检测部分，其沿圆周方向以整个圆周方向的整个周边以规则的间隔布置，并且沿着可移动滑轮的移动方向延伸。
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公开(公告)号：US07807126B2
公开(公告)日：2010-10-05
申请号：US12364609
申请日：2009-02-03
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.
摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板的一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。
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公开(公告)号：US07655208B2
公开(公告)日：2010-02-02
申请号：US11402062
申请日：2006-04-12
申请人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
发明人： Kiichi Meguro , Yoshiyuki Yamamoto , Takahiro Imai
摘要： The object of the present invention is to obtain a high quality single crystalline diamond that has less distortion and large area suitable for semiconductor device substrates or an optical component material. The present invention is a single crystalline diamond produced by chemical vapor deposition, wherein, when a linear polarized light which is composed of two linear polarized lights perpendicular to each other is introduced into one main face of the single crystalline diamond, a maximum value of a retardation between the two linear polarized lights perpendicular to each other which come out from an opposite main face is not more than 50 μm at maximum per a thickness of 100 μm across an entire of the single crystalline diamond, and also a method for producing the diamond.
摘要翻译： 本发明的目的是获得具有较小变形和大面积的高半导体器件衬底或光学部件材料的高质量单晶金刚石。 本发明是通过化学气相沉积法生产的单晶金刚石，其中当由彼此垂直的两个线性偏振光组成的线性偏振光被引入单晶金刚石的一个主面时，其最大值为 在整个单晶金刚石上，相对于从相对的主面出来的彼此垂直的两个线偏振光之间的延迟最大值不超过每100μm厚度100mum的最大50μm，并且还有一种用于制造金刚石的方法 。
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