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    Process for the production of a diamond heat sink
    3.
    发明授权
    Process for the production of a diamond heat sink 失效
    生产金刚石散热器的工艺

    公开(公告)号：US5791045A

    公开(公告)日：1998-08-11

    申请号：US819440

    申请日：1997-03-17

    申请人： Yoshiyuki Yamamoto ,  Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    发明人： Yoshiyuki Yamamoto ,  Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    IPC分类号： H01L21/48 ,  H01L23/367 ,  H01L23/373 ,  B23P15/26

    CPC分类号： H01L21/4882 ,  H01L23/3672 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10T29/4935

    摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

    摘要翻译： 具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。 翅片与基底组合，并且是具有至少1（W / cm×K）的热导率的材料，例如金刚石。 这种散热器是通过简单的工艺生产的，其包括设置用于生长金刚石的基底材料和翅片，使得基底材料的表面和翅片的上端通过使用适当的支撑构件 或者通过使基材自身工作并通过气相合成方法在其上生长金刚石。

    Diamond reinforced composite material
    4.
    发明授权
    Diamond reinforced composite material 失效
    金刚石增强复合材料

    公开(公告)号：US5677372A

    公开(公告)日：1997-10-14

    申请号：US569591

    申请日：1995-12-08

    申请人： Yoshiyuki Yamamoto ,  Takahiro Imai ,  Takashi Tsuno ,  Naoji Fujimori

    发明人： Yoshiyuki Yamamoto ,  Takahiro Imai ,  Takashi Tsuno ,  Naoji Fujimori

    IPC分类号： B29C70/10 ,  C08K9/02 ,  C23C16/01 ,  C23C16/27 ,  C23C16/56 ,  C08K3/04 ,  B32B5/00 ,  C23C16/38

    CPC分类号： C23C16/274 ,  B29C70/10 ,  C08K9/02 ,  C23C16/01 ,  C23C16/56 ,  Y10T428/12438 ,  Y10T428/2933 ,  Y10T428/2938 ,  Y10T428/2942 ,  Y10T428/2978 ,  Y10T428/30

    摘要： An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.

    摘要翻译： 金刚石纤维与至少一种有机聚合物如树脂的基质之间的改进的粘附或粘合是在用气相沉积金刚石增强的复合材料中实现的。 为了改善与基质的结合，从气相沉积金刚石纤维的表面除去氢。 这可以通过在氧化气氛下在约150℃至约800℃的温度下或在非氧化性气氛下在约800℃至约1500℃的温度下加热金刚石来实现。 含有不大于约1×10 15 / cm 2氢原子的气相沉积金刚石的表面例如以足够的强度结合到树脂基质上。 为了进一步改善结合，使用掺有B或N的金刚石作为增强材料或至少其表面层。

    Heat sink and a process for the production of the same
    5.
    发明授权
    Heat sink and a process for the production of the same 失效
    散热片和生产过程相同

    公开(公告)号：US5642779A

    公开(公告)日：1997-07-01

    申请号：US257288

    申请日：1994-06-09

    申请人： Yoshiyuki Yamamoto ,  Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    发明人： Yoshiyuki Yamamoto ,  Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    IPC分类号： H01L21/48 ,  H01L23/367 ,  H01L23/373

    CPC分类号： H01L21/4882 ,  H01L23/3672 ,  H01L23/3732 ,  H01L2924/0002 ,  Y10T29/4935

    摘要： A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

    摘要翻译： 具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。 翅片嵌入基板中，并且是具有至少1（W / cm×K）的导热率的材料，例如金刚石。 这样的散热器可以通过简单的方法来制造，该方法是将基底材料和用于生长金刚石的翅片以这样一种方式制成，使得基底材料的表面和翅片的上端通过使用合适的 或通过使基材本身加工并通过气相合成方法在其上生长金刚石。

    Epitaxial growth of diamond from vapor phase
    6.
    发明授权
    Epitaxial growth of diamond from vapor phase 失效
    来自气相的金刚石的外延生长

    公开(公告)号：US5474021A

    公开(公告)日：1995-12-12

    申请号：US125482

    申请日：1993-09-22

    申请人： Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    发明人： Takashi Tsuno ,  Takahiro Imai ,  Naoji Fujimori

    IPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/04

    CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/04

    摘要： A plurality of single-crystalline diamond plates having principal surfaces consisting essentially of {100} planes are prepared. The diamond plates are so arranged that the respective principal surfaces are substantially flush with each other. In this arrangement, an angle formed by crystal orientations of the principal surfaces between adjacent plates is not more than 5.degree., a clearance between the adjacent plates is not more than 30 .mu.m, and a difference in height of the principal surfaces is not more than 30 .mu.m between the adjacent plates. To secure this arrangement, the plurality of diamond plates are joined to each other by depositing diamond on the plates to form a single large diamond plate. After such joining, the principal surfaces of the diamond plates are polished in order to eliminate steps or height differences. Then, diamond is epitaxially grown on a polished surface of the large diamond plate from a vapor phase. In this vapor phase, proportions X, Y and Z obtained from the following equations I, II and III respectively satisfy the following conditions:0.5.ltoreq.X.ltoreq.2.00.3.ltoreq.Y.ltoreq.2.0Z.ltoreq.1.0X=([C]/[H]).times.100% IY=([C]-[O]/[H]).times.100% IIZ=([O]/[H]).times.100% IIIwhere [C], [O] and [H] represent molar numbers of carbon, oxygen and hydrogen atoms respectively. In this way it is possible to obtain vapor-deposited diamond having favorable characteristics.

    摘要翻译： 制备了主要由{100}平面组成的主表面的多个单晶金刚石板。 金刚石板被布置成使得各个主表面彼此基本齐平。 在这种布置中，相邻板之间的主表面的晶体取向形成的角度不大于5°，相邻板之间的间隙不大于30μm，并且主表面的高度差不大 相邻板块之间大于30微米。 为了确保这种布置，多个金刚石板通过在金属板上沉积金刚石形成单个大金刚石板而彼此接合。 在这种接合之后，抛光金刚石板的主表面以消除台阶或高度差异。 然后，金刚石从气相在外延生长在大金刚石板的抛光表面上。 在该气相中，由下列方程式I，II和III得到的比例X，Y和Z分别满足以下条件：0.5≤X≤2.00.3

    Diamond and its preparation by chemical vapor deposition method
    7.
    发明授权
    Diamond and its preparation by chemical vapor deposition method 失效
    金刚石及其化学气相沉积法制备

    公开(公告)号：US5270028A

    公开(公告)日：1993-12-14

    申请号：US884891

    申请日：1992-05-18

    申请人： Keiichiro Tanabe ,  Takahiro Imai ,  Naoji Fujimori

    发明人： Keiichiro Tanabe ,  Takahiro Imai ,  Naoji Fujimori

    IPC分类号： C23C16/27 ,  C30B25/10 ,  C01B31/06

    CPC分类号： C23C16/272 ,  C23C16/274 ,  C23C16/277 ,  C30B25/105

    摘要： A diamond having improved properties is produced by a method which comprises introducing a mixture of hydrogen (A), an inert gas (B) and a carbon-containing compound (C) in molar ratios which satisfy the following equations: ##EQU1## generating a low temperature plasma with one of direct current and an alternating current electromagnetic field under pressure of 5 to 760 Torr to form the diamond on a substrate, wherein there is no substantial differnce between a place where the plasma is generated and a place where the diamond is formed on the substrate.

    摘要翻译： 通过包括以满足以下等式的摩尔比引入氢（A），惰性气体（B）和含碳化合物（C）的混合物的方法制备具有改进性能的金刚石： IMAGE>产生一个低压等离子体，其中一个直流电流和一个交流电流场在5到760乇的压力下形成金刚石在衬底上，其中在产生等离子体的地方和一个地方之间没有实质性的差异 其中金刚石形成在基底上。