公开(公告)号：US6096129A

公开(公告)日：2000-08-01

申请号：US60555

申请日：1998-04-15

申请人： Hirohisa Saito ,  Takashi Tsuno ,  Takahiro Imai ,  Yoshiaki Kumazawa

发明人： Hirohisa Saito ,  Takashi Tsuno ,  Takahiro Imai ,  Yoshiaki Kumazawa

IPC分类号： C30B25/00 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H01L21/205 ,  C30B23/04

CPC分类号： C30B25/02 ,  C30B25/00 ,  C30B25/105 ,  C30B29/04 ,  Y10S117/902 ,  Y10S117/913

摘要： An initial single-crystalline diamond base material is prepared from a flat plate having a major surface and side surfaces consisting of low-index planes. Then, single crystalline diamond is homoepitaxially vapor-deposited on the single-crystalline diamond base material, and a resulting diamond material is cut and polished in a particular manner to provide a successive base material on which single-crystalline diamond is again grown, thereby forming a single-crystalline diamond having a large area. A holder for the single-crystalline diamond base material consists of or is coated with a material hardly forming a compound with carbon. Single crystalline diamond can be stably formed on the surfaces of the base material. Consequently, single-crystalline diamond of high quality having a large area can be stably produced in a shorter time using either plasma CVD or a thermal filament method.

摘要翻译： 由具有主要表面和由低折射率平面组成的侧表面的平板制备初始单晶金刚石基材。 然后，将单晶金刚石同轴异质气相沉积在单晶金刚石基材上，并以特定的方式对所得金刚石材料进行切割和抛光，以提供连续的基材，再次生长单晶金刚石，从而形成 具有大面积的单晶金刚石。 用于单晶金刚石基材的保持器由几乎不与碳形成化合物的材料组成或涂覆。 可以在基材的表面上稳定地形成单晶金刚石。 因此，可以使用等离子体CVD或热丝法在更短的时间内稳定地制造具有大面积的高质量的单晶金刚石。

公开(公告)号：US5788766A

公开(公告)日：1998-08-04

申请号：US565595

申请日：1995-11-30

申请人： Yoshiyuki Yamamoto ,  Keiichiro Tanabe ,  Katsuko Harano ,  Takashi Tsuno ,  Nobuhiro Ota ,  Naoji Fujimori

发明人： Yoshiyuki Yamamoto ,  Keiichiro Tanabe ,  Katsuko Harano ,  Takashi Tsuno ,  Nobuhiro Ota ,  Naoji Fujimori

IPC分类号： G21K1/10 ,  H01J35/18 ,  H01L23/473 ,  H01S5/02 ,  H01S5/024 ,  H05H7/00 ,  C30B29/05

CPC分类号： H01J35/18 ,  G21K1/10 ,  H01L23/473 ,  H05H7/00 ,  G21K2201/065 ,  H01J2235/122 ,  H01J2235/1262 ,  H01L2924/0002

摘要： A window material, which has a high thermal conductivity material layer having a thermal conductivity of at least 10 W/cm.multidot.K and which has a cooling medium flow path on or in the high thermal conductivity material layer, has a high heat-dissipating property and a high transmittance.

摘要翻译： 具有导热率至少为10W / cm×KK的高导热性材料层，并且在高导热性材料层上或其上具有冷却介质流路的窗材料具有高的散热性和 透光率高。

公开(公告)号：US5499601A

公开(公告)日：1996-03-19

申请号：US302879

申请日：1994-09-14

申请人： Takahiro Imai ,  Takashi Tsuno ,  Yoshiyuki Yamamoto ,  Naoji Fujimori

发明人： Takahiro Imai ,  Takashi Tsuno ,  Yoshiyuki Yamamoto ,  Naoji Fujimori

IPC分类号： C01B31/06 ,  C23C16/02 ,  C23C16/27 ,  C30B11/00 ,  C30B25/02 ,  C30B25/18

CPC分类号： C30B25/18 ,  C01B31/06 ,  C23C16/0227 ,  C23C16/27 ,  C30B11/00 ,  C30B25/02 ,  C30B29/04

摘要： Diamond particles are dispersed in a metal and the metal matrix is molten and recrystallized so that the diamond particles are aligned to the same crystal orientation to form a substrate equivalent to a diamond single crystal substrate and then the diamond is grown by a vapor phase synthesis on the substrate. The diamond single crystal having the homogeneity and good quality can be formed and the diamond single crystal having a large area can be easily and economically obtained.

摘要翻译： PCT No.PCT / JP94 / 00035 Sec。 371日期：1994年9月14日 102（e）1994年9月14日PCT PCT 1994年1月13日PCT公布。 第WO94 / 16125号PCT公告 日期为1994年7月21日。金刚石颗粒分散在金属中，金属基体熔融并重结晶，使得金刚石颗粒与相同的晶体取向对准以形成与金刚石单晶基板相当的基底，然后金刚石为 通过基底上的气相合成生长。 可以形成具有均匀性和良好质量的金刚石单晶，并且可以容易且经济地获得具有大面积的金刚石单晶。

公开(公告)号：US5217877A

公开(公告)日：1993-06-08

申请号：US806059

申请日：1991-12-11

申请人： Yosuke Sawada ,  Tomokazu Ueki ,  Takashi Tsuno ,  Toshikazu Oki

发明人： Yosuke Sawada ,  Tomokazu Ueki ,  Takashi Tsuno ,  Toshikazu Oki

IPC分类号： C07C65/40

CPC分类号： C07C65/40 ,  Y10S435/825

摘要： The present invention relates to a novel .alpha.-glucosidase inhibitor, pradimicin Q, having the following formula ##STR1## and its pharmaceutically acceptable base salts.

摘要翻译： 本发明涉及具有下列结构式的新型α-葡萄糖苷酶抑制剂普拉定亚胺Q及其药学上可接受的碱盐。

公开(公告)号：US4732976A

公开(公告)日：1988-03-22

申请号：US806880

申请日：1985-12-09

申请人： Takashi Tsuno ,  Masataka Konishi

发明人： Takashi Tsuno ,  Masataka Konishi

IPC分类号： C07H5/06 ,  C07G11/00 ,  A61K35/00 ,  C07H15/00 ,  C07H17/00

CPC分类号： C07H5/06

摘要： 3,3'-Neotrehalosadiamine antibiotic is prepared by fermentation of B. pumilus K169-B91 (ATCC No. 53206) in a nutrient medium preferably comprising soybean meal, corn starch, calcium carbonate and magnesium sulfate. The antibiotic and pharmaceutically acceptable salts and hydrates thereof and compositions containing these are useful to treat bacterial infections in mammals.

摘要翻译： 3,3'-Neotrehalosadiamine抗生素通过在优选包含豆粕，玉米淀粉，碳酸钙和硫酸镁的营养培养基中发酵小白菜K169-B91（ATCC No.53206）来制备。 抗生素及其药学上可接受的盐和水合物以及含有它们的组合物可用于治疗哺乳动物的细菌感染。

公开(公告)号：US09136911B2

公开(公告)日：2015-09-15

申请号：US13388878

申请日：2010-08-04

申请人： Takashi Hikihara ,  Tsuguhiro Takuno ,  Kenichi Hirotsu ,  Takefumi Shimoguchi ,  Toshikazu Shibata ,  Takashi Tsuno ,  Satoshi Hatsukawa

发明人： Takashi Hikihara ,  Tsuguhiro Takuno ,  Kenichi Hirotsu ,  Takefumi Shimoguchi ,  Toshikazu Shibata ,  Takashi Tsuno ,  Satoshi Hatsukawa

IPC分类号： G08C19/12 ,  H04B3/56 ,  H04B3/54

CPC分类号： H04B3/56 ,  H04B3/54 ,  H04B2203/5416 ,  H04B2203/5458 ,  H04B2203/547

摘要： To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance. A semiconductor switching element that is present on an electric circuit connected to a power line is driven by a modulator unit. The modulator unit controls ON/OFF operations of the semiconductor switching element, to thereby cause a communication signal of a modulated rectangular wave to be output to the power line for a prescribed period.

摘要翻译： 通过进一步简化和成本有效的电路配置实现电力线通信的传输功能，在安装在诸如家用电器的电器中的PLC调制解调器中。 存在于与电力线连接的电路上的半导体开关元件由调制器单元驱动。 调制器单元控制半导体开关元件的接通/断开操作，从而使调制矩形波的通信信号输出到电力线一段规定的时间。

公开(公告)号：US20120306086A1

公开(公告)日：2012-12-06

申请号：US13485018

申请日：2012-05-31

申请人： Takahiro Sugimura ,  Takashi Tsuno

发明人： Takahiro Sugimura ,  Takashi Tsuno

IPC分类号： H01L23/485

CPC分类号： H01L23/3735 ,  H01L23/24 ,  H01L23/49866 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01047 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device according to an embodiment includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate, and a semiconductor element mounted on the wiring layer. In this semiconductor device, the wiring layer includes a first copper-containing material containing copper and a metal having the thermal expansion coefficient smaller than that of copper and the thermal expansion coefficient of the first copper-containing material is smaller than that of copper.

摘要翻译： 根据实施例的半导体器件包括绝缘基板，形成在绝缘基板的第一主表面上的布线层和安装在布线层上的半导体元件。 在该半导体装置中，布线层包括含铜的第一含铜材料和热膨胀系数小于铜的金属，第一含铜材料的热膨胀系数小于铜的热膨胀系数。

公开(公告)号：US20120119225A1

公开(公告)日：2012-05-17

申请号：US13322089

申请日：2011-02-21

申请人： Hiromu Shiomi ,  Hideto Tamaso ,  Shin Harada ,  Takashi Tsuno ,  Yasuo Namikawa

发明人： Hiromu Shiomi ,  Hideto Tamaso ,  Shin Harada ,  Takashi Tsuno ,  Yasuo Namikawa

IPC分类号： H01L29/24 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L21/02378 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/046 ,  H01L21/0495 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068

摘要： The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate.

摘要翻译： 本发明提供一种碳化硅衬底，提供衬底的外延层，半导体器件和制造碳化硅衬底的方法，其中每一个都实现了降低的导通电阻。 碳化硅衬底是具有主表面的碳化硅衬底，并且包括：形成在主表面的至少一部分中的SiC单晶衬底; 以及设置成围绕SiC单晶衬底的基底构件。 基部构件包括边界区域和基底区域。 边界区域沿着主表面的方向与SiC单晶基板相邻，并且在其中具有晶界。 基极区域在与主表面垂直的方向上与SiC单晶衬底相邻，杂质浓度高于SiC单晶衬底。

公开(公告)号：US06270898B1

公开(公告)日：2001-08-07

申请号：US09180981

申请日：1998-11-18

申请人： Katsuko Yamamoto ,  Takahisa Iguchi ,  Yoshiaki Kumazawa ,  Katsuyuki Tanaka ,  Hiromu Shiomi ,  Takashi Tsuno ,  Naoji Fujimori

发明人： Katsuko Yamamoto ,  Takahisa Iguchi ,  Yoshiaki Kumazawa ,  Katsuyuki Tanaka ,  Hiromu Shiomi ,  Takashi Tsuno ,  Naoji Fujimori

IPC分类号： H01L2160

CPC分类号： H01L21/67138 ,  B23K26/382 ,  B23K26/40 ,  B23K2101/20 ,  B23K2101/35 ,  B23K2103/50 ,  B23K2103/52 ,  Y10T428/24355 ,  Y10T428/24628 ,  Y10T428/24802 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/26 ,  Y10T428/30

摘要： A conductive polycrystalline diamond film having specific resistance of at least 1×10−4 &OHgr;cm and less than 1×103 &OHgr;cm, whose film thickness is in the range of at least 0.1 &mgr;m and not more than 500 &mgr;m, is film-formed by vapor-phase synthesis on a surface employed for pressure bonding, a surface opposite to this surface or at least two side surfaces intersecting with these surfaces on a substrate of a bonding tool tip that is applicable for bonding and packaging a semiconductor chip.

摘要翻译： 具有至少1×10 -4欧姆·厘米的电阻率和小于1×10 3欧姆·厘米的导电多晶金刚石膜，其膜厚度在至少0.1μm至不大于500μm的范围内，通过气相合成 用于压接的表面，与该表面相对的表面或与适用于接合和封装半导体芯片的接合工具尖端的基板上的这些表面相交的至少两个侧表面。

公开(公告)号：US5993919A

公开(公告)日：1999-11-30

申请号：US984609

申请日：1997-12-03

申请人： Takashi Tsuno ,  Takahiro Imai ,  Kentaro Yoshida ,  Yoshiaki Kumazawa

发明人： Takashi Tsuno ,  Takahiro Imai ,  Kentaro Yoshida ,  Yoshiaki Kumazawa

IPC分类号： C30B29/04 ,  C23C16/02 ,  C23C16/26 ,  C23C16/27 ,  C23C16/50 ,  C30B25/10 ,  H01J37/32 ,  B05D3/06

CPC分类号： C30B25/105 ,  C23C16/02 ,  C23C16/27 ,  C23C16/271 ,  H01J37/3233 ,  H01J2237/339 ,  Y10S427/106

摘要： In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

摘要翻译： 在含有碳成分的等离子体在基板上合成金刚石的方法中，将包含钨作为热电子发射材料的长丝布置在室中的基板的上方。 电极设置在与灯丝分离并特别在灯丝上方的位置。 长丝至少暂时通电，其电位相对高于衬底的电位，同时电极至少暂时提供比丝的电位更高的电位。 因此，在细丝和衬底之间产生等离子体，同时电子从细丝移动到电极，用于在细丝和电极之间产生等离子体，从而在衬底上形成金刚石核。 此后，电子发射丝和电极的各自的电位彼此相等，用于从金刚石的核生长金刚石膜。