公开(公告)号：US20110223044A1

公开(公告)日：2011-09-15

申请号：US13039226

申请日：2011-03-02

申请人： Yoshinobu Nakayama ,  Takahiro Imai

发明人： Yoshinobu Nakayama ,  Takahiro Imai

IPC分类号： F04B35/04 ,  H01L41/09

CPC分类号： H01L41/042 ,  H01L41/0973

摘要： A transformer T1 receives a sinusoidal signal on the primary side. The transformer T1 is provided with a terminal 3, a terminal 5, and a center tap 4 on the secondary side. The center tap 4 is connected to the anode of a diode D1. The cathode of the diode D1 is connected to the cathode of a diode D2 and one electrode of a capacitor C1. The other electrode of the capacitor C1 is connected to the anode of a diode D3 and a connection point of the second electrode of a piezoelectric element C2 and the first electrode of a piezoelectric element C3. The second electrode of the piezoelectric element C3 is connected to the terminal 3. The first electrode of the piezoelectric element C2 is connected to the cathode of the diode D3, the anode of the diode D2, and the terminal 5.

摘要翻译： 变压器T1在初级侧接收正弦信号。 变压器T1在次级侧设置有端子3，端子5和中心抽头4。 中心抽头4连接到二极管D1的阳极。 二极管D1的阴极连接到二极管D2的阴极和电容器C1的一个电极。 电容器C1的另一个电极连接到二极管D3的阳极和压电元件C2的第二电极和压电元件C3的第一电极的连接点。 压电元件C3的第二电极连接到端子3.压电元件C2的第一电极连接到二极管D3的阴极，二极管D2的阳极和端子5。

公开(公告)号：US08541925B2

公开(公告)日：2013-09-24

申请号：US13039226

申请日：2011-03-02

申请人： Yoshinobu Nakayama ,  Takahiro Imai

发明人： Yoshinobu Nakayama ,  Takahiro Imai

IPC分类号： H01L41/09

CPC分类号： H01L41/042 ,  H01L41/0973

摘要： A transformer T1 receives a sinusoidal signal on the primary side. The transformer T1 is provided with a terminal 3, a terminal 5, and a center tap 4 on the secondary side. The center tap 4 is connected to the anode of a diode D1. The cathode of the diode D1 is connected to the cathode of a diode D2 and one electrode of a capacitor C1. The other electrode of the capacitor C1 is connected to the anode of a diode D3 and a connection point of the second electrode of a piezoelectric element C2 and the first electrode of a piezoelectric element C3. The second electrode of the piezoelectric element C3 is connected to the terminal 3. The first electrode of the piezoelectric element C2 is connected to the cathode of the diode D3, the anode of the diode D2, and the terminal 5.

摘要翻译： 变压器T1在初级侧接收正弦信号。 变压器T1在次级侧设置有端子3，端子5和中心抽头4。 中心抽头4连接到二极管D1的阳极。 二极管D1的阴极连接到二极管D2的阴极和电容器C1的一个电极。 电容器C1的另一个电极连接到二极管D3的阳极和压电元件C2的第二电极和压电元件C3的第一电极的连接点。 压电元件C3的第二电极连接到端子3.压电元件C2的第一电极连接到二极管D3的阴极，二极管D2的阳极和端子5。

公开(公告)号：US11010004B2

公开(公告)日：2021-05-18

申请号：US16083722

申请日：2017-01-16

申请人： Mayuka Araumi ,  Yuko Arizumi ,  Makito Nakashima ,  Megumi Kitamura ,  Tomoaki Sugawara ,  Tsuneaki Kondoh ,  Takahiro Imai ,  Junichiro Natori ,  Hideyuki Miyazawa ,  Mizuki Otagiri

发明人： Mayuka Araumi ,  Yuko Arizumi ,  Makito Nakashima ,  Megumi Kitamura ,  Tomoaki Sugawara ,  Tsuneaki Kondoh ,  Takahiro Imai ,  Junichiro Natori ,  Hideyuki Miyazawa ,  Mizuki Otagiri

IPC分类号： G06F3/041 ,  G06F3/044 ,  H03K17/975 ,  H03K17/96 ,  H01L41/113 ,  H01L41/193 ,  H01L41/253

摘要： An input element includes: a first electrode and a second electrode that face each other; and an intermediate layer disposed between the first and the second electrodes and made of rubber or a rubber composition, the rubber or rubber composition containing siloxane. The intermediate layer is made of rubber or a rubber composition, the rubber or rubber composition containing siloxane that has a silicon atom bound to three to four oxygen atoms. The intermediate layer has concentration profiles such that, while oxygen increases from one side to the other side of a thickness direction thereof and has a maximal value, carbon decreases from the one side to the other side thereof and has a minimal value.

公开(公告)号：US09893652B2

公开(公告)日：2018-02-13

申请号：US15152085

申请日：2016-05-11

申请人： Mizuki Otagiri ,  Tsuneaki Kondoh ,  Tomoaki Sugawara ,  Yuko Arizumi ,  Junichiro Natori ,  Takahiro Imai

发明人： Mizuki Otagiri ,  Tsuneaki Kondoh ,  Tomoaki Sugawara ,  Yuko Arizumi ,  Junichiro Natori ,  Takahiro Imai

IPC分类号： F02B63/04 ,  F03G7/08 ,  H02K7/18 ,  H02N2/18 ,  H01L41/18 ,  H01L41/047 ,  F03G5/06 ,  A43B3/00 ,  A61F5/14

CPC分类号： H02N2/18 ,  A43B3/0015 ,  F03G5/06 ,  H01L41/0477 ,  H01L41/183

摘要： An electricity-generating element unit including a plurality of electricity-generating elements, each of the plurality of electricity-generating elements including a first electrode, an intermediate layer, and a second electrode disposed with the intermediate layer being between the first electrode and the second electrode, and a coupling unit coupling the plurality of electricity-generating elements to each other, wherein when an external force is applied to at least one of the plurality of electricity-generating elements to bring the first electrode and the second electrode of the at least one of the plurality of electricity-generating elements close to each other, a distance between the first electrode and the second electrode of the electricity-generating element or each of the electricity-generating elements to which an external force is not applied is increased by the coupling unit.

公开(公告)号：US20130129251A1

公开(公告)日：2013-05-23

申请号：US13813447

申请日：2011-07-13

申请人： Masaki Ishii ,  Akira Kinoshita ,  Takahiro Imai ,  Kenji Namie

发明人： Masaki Ishii ,  Akira Kinoshita ,  Takahiro Imai ,  Kenji Namie

IPC分类号： G06T5/00

CPC分类号： G06T5/006 ,  G06T3/0062 ,  H04N5/23219 ,  H04N5/2628 ,  H04N5/3572 ,  H04N7/147

摘要： An image processing apparatus includes an image acquiring unit that acquires an image; an information acquiring unit that acquires image information indicative of a content of the image; and a correcting unit that corrects the image based on the image information such that some of warping of the image is left.

摘要翻译： 图像处理装置包括获取图像的图像获取单元; 信息获取单元，其获取指示图像的内容的图像信息; 以及校正单元，其基于图像信息校正图像，使得留下图像的一些翘曲。

公开(公告)号：US20100297291A1

公开(公告)日：2010-11-25

申请号：US12679126

申请日：2008-09-22

申请人： Kentaro Shinoda ,  Eiiti Okawa ,  Takahiro Imai

发明人： Kentaro Shinoda ,  Eiiti Okawa ,  Takahiro Imai

IPC分类号： C12G1/00 ,  G01N33/48 ,  G01N21/35 ,  C12G1/02

CPC分类号： G01N21/359 ,  G01N21/3563 ,  G01N2021/8592 ,  G01N2201/1293

摘要： A visible/near-infrared spectrum analyzing method for identifying components of a sample and determining characteristics of the components using visible light and/or near-infrared light having a wavelength of 400 to 2500 nm. The quantitative determination of the components, which have been conventionally hard to identify, of a grape of a small fruit cultivar for wine making can be made in a nondestructive way. A grape of a small fruit cultivar for wine making (a sample under examination) is irradiated with visible light and/or near-infrared light having a wavelength of 600 to 1100 nm and is subjected to spectrum determination of the sample and an absorption spectrum is determined from the obtained spectrum. By employing a multivariate statistical analysis (hereinafter referred to multivariate analysis) by the PLS or MLR method, a model enabling quantitative determination of the components of the sample under examination is created.

摘要翻译： 一种可见/近红外光谱分析方法，用于识别样品的组分，并使用波长为400至2500nm的可见光和/或近红外光确定组分的特性。 通常难以鉴定的用于酿造的小型水果品种的葡萄的成分的定量测定可以非破坏性地进行。 将用于制酒的小水果品种（待检样品）的葡萄用可见光和/或具有600至1100nm波长的近红外光照射并进行样品的光谱测定，吸收光谱为 由所得光谱确定。 通过采用PLS或MLR方法进行多变量统计分析（以下称为多变量分析），可以建立能够定量确定被检样品成分的模型。

公开(公告)号：US20090269576A1

公开(公告)日：2009-10-29

申请号：US12083087

申请日：2006-10-24

申请人： Kazuhiko Oda ,  Takashi Matsuura ,  Yoshihiro Akahane ,  Toshihiko Ushiro ,  Takahiro Imai

发明人： Kazuhiko Oda ,  Takashi Matsuura ,  Yoshihiro Akahane ,  Toshihiko Ushiro ,  Takahiro Imai

IPC分类号： B32B9/00 ,  B29D11/00

CPC分类号： G02B6/122 ,  G02B1/105 ,  G02B1/14 ,  Y10T428/265

摘要： In an optical thin film of the present invention, a hydrogenated carbon film containing at least carbon and hydrogen as major components is formed on a substrate, and at least one protective layer including one of an oxide film, a nitride film, an oxynitride film, a fluoride film, and a film containing hydrogen and carbon as major components is superposed thereon.

摘要翻译： 在本发明的光学薄膜中，在基板上形成至少含有碳和氢作为主要成分的氢化碳膜，至少一个保护层包括氧化膜，氮化物膜，氧氮化物膜， 氟化物膜和含有氢和碳作为主要成分的膜叠加在其上。

公开(公告)号：US20090160307A1

公开(公告)日：2009-06-25

申请号：US12094250

申请日：2007-09-18

申请人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

发明人： Akihiko Ueda ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Takahiro Imai

IPC分类号： H01J1/16 ,  H01J9/02

CPC分类号： H01J1/3044 ,  H01J9/025 ,  H01J37/065 ,  H01J37/073 ,  H01J2201/30407 ,  H01J2201/30411 ,  H01J2201/30419 ,  H01J2201/30457 ,  H01J2237/06341 ,  H01J2237/26 ,  H01J2237/3137 ,  H01J2237/3146 ,  H01J2237/31749 ,  H01J2237/3175

摘要： A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used in an electron microscope or other electron beam device, and a method for manufacturing the diamond electron source. One end of a pillar-shaped diamond monocrystal 10 is ground to form a smooth flat surface 11, and a ceramic layer 12 is formed on the smooth flat surface 11. A thin-film layer 14 having a prescribed shape is deposited on the ceramic layer 12 using a focused ion beam device, after which the ceramic layer 12 is patterned by etching using the thin-film layer 14 as a mask. A single sharpened tip is formed at one end of the pillar-shaped diamond monocrystal 10 by dry etching using the resultant ceramic mask.

摘要翻译： 一种金刚石电子源，其中在微细加工过程中难以施加抗蚀剂尺寸的柱状金刚石单晶的一端形成单个锐化尖端作为电子显微镜或其他电子束中使用的电子发射点 器件，以及金刚石电子源的制造方法。 将柱状金刚石单晶10的一端研磨成平滑的平坦面11，在平坦的平坦面11上形成陶瓷层12.具有规定形状的薄膜层14沉积在陶瓷层上 12，使用聚焦离子束装置，之后通过使用薄膜层14作为掩模的蚀刻对陶瓷层12进行图案化。 通过使用所得到的陶瓷掩模的干蚀刻，在柱状金刚石单晶10的一端形成单个尖锐的尖端。

公开(公告)号：US07524372B2

公开(公告)日：2009-04-28

申请号：US11388970

申请日：2006-03-27

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B29/04

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/04

摘要： A method for manufacturing a diamond single crystal substrate, in which a single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis, said method comprising: preparing a diamond single crystal seed substrate which has a main surface whose planar orientation falls within an inclination range of not more than 8 degrees relative to a {100} plane or a {111} plane, as a seed substrate; forming a plurality of planes of different orientation which are inclined in the outer peripheral direction of the main surface relative to the main surface on one side of this seed substrate, by machining; and then growing a diamond single crystal by vapor phase synthesis.

摘要翻译： 一种用于制造金刚石单晶衬底的方法，其中通过气相合成从用作种子衬底的金刚石单晶生长单晶，所述方法包括：制备金刚石单晶种子衬底，其具有主表面，其平面 作为种子基材，相对于{100}面或{111}面，取向落入不大于8度的倾斜范围内; 通过机械加工形成在主面的外周方向相对于该种籽基板一侧的主面倾斜的多个不同取向的面; 然后通过气相合成生长金刚石单晶。

公开(公告)号：US07481879B2

公开(公告)日：2009-01-27

申请号：US11032176

申请日：2005-01-11

申请人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

发明人： Kiichi Meguro ,  Yoshiyuki Yamamoto ,  Takahiro Imai

IPC分类号： C30B23/02 ,  C01B31/06

CPC分类号： C30B33/00 ,  C30B25/20 ,  C30B29/04 ,  Y10T428/30

摘要： A diamond single crystal substrate manufacturing method for growing by vapor-phase synthesis a single crystal from a diamond single crystal seed substrate, comprising etching away by reactive ion etching, prior to single crystal growth, at least 0.5 μm and less than 400 μm, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing from the surface of the seed substrate the work-affected layers caused by mechanical polishing; and growing then a single crystal thereon. The manufacturing method provides a diamond single crystal substrate having a high quality, large size, and no unintentional impurity inclusions, and suitable for use as semiconductor materials, electronic components, optical components or the like.

摘要翻译： 一种用于通过气相合成从金刚石单晶种子基底生长单晶的菱形单晶衬底制造方法，包括在单晶生长之前通过反应离子蚀刻腐蚀至少0.5μm和小于400μm，在 将已经机械抛光的种子基片的表面的厚度除去，从而从种子基片的表面除去由机械抛光引起的受影响层; 然后在其上生长单晶。 该制造方法提供具有高质量，大尺寸和无意的杂质夹杂物的金刚石单晶衬底，并且适合用作半导体材料，电子部件，光学部件等。