公开(公告)号：US08726088B2

公开(公告)日：2014-05-13

申请号：US13351996

申请日：2012-01-17

申请人： Chia-Hsiang Chen

发明人： Chia-Hsiang Chen

IPC分类号： G06F11/00

CPC分类号： G06F11/1417 ,  G06F11/0757 ,  G06F11/076 ,  G06F11/0793 ,  G06F11/321

摘要： A method for processing booting errors for a computer having multiple voltage regulator downs (VRDs) includes reading a boot sequence including multiple power-on stages, and each power-on stage corresponds to a boot voltage and one of the VRDs; performing the power-on stages according to the boot sequence, and determining whether an output voltage of the VRD corresponding to each power-on stage is equal to the corresponding boot voltage; and when the output voltage of any one of the VRDs is not equal to the corresponding boot voltage, performing a debugging procedure.

摘要翻译： 一种用于处理具有多个电压调节器降压（VRD）的计算机的引导错误的方法包括读取包括多个上电级的引导序列，并且每个上电阶段对应于引导电压和VRD中的一个; 根据引导顺序执行上电阶段，并且确定与每个上电阶段相对应的VRD的输出电压是否等于相应的引导电压; 并且当任何一个VRD的输出电压不等于相应的引导电压时，执行调试过程。

公开(公告)号：US08609981B2

公开(公告)日：2013-12-17

申请号：US13104744

申请日：2011-05-10

申请人： Han-Yi Chen ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

发明人： Han-Yi Chen ,  Chia-Hsiang Chen ,  Huan-Chieh Su ,  Kuo-Liang Liu ,  Tri-Rung Yew

IPC分类号： H01L31/00 ,  H01B1/02 ,  H01B1/08

CPC分类号： H01B1/08 ,  B82Y30/00 ,  C01G39/02 ,  C01P2002/54 ,  C01P2004/16 ,  C01P2004/17 ,  C01P2006/40 ,  H01G9/2031 ,  H01G9/2059 ,  H01L31/022466 ,  H01L31/035227 ,  H01L31/03529 ,  H01L31/072 ,  H01L31/1884 ,  H01L51/442 ,  Y02E10/50

摘要： A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

摘要翻译： p型透明导电氧化物和含有p型透明导电氧化物的太阳能电池，其中p型透明导电氧化物包括掺杂有少于6价电子的元素的三氧化钼，该元素选自 由碱金属，碱土金属，III族元素，IV族，V族，过渡元素及其组合组成。 掺杂具有小于6价电子的元素导致孔数增加，从而增加空穴漂移速度，并使费米能级更接近p型材料的范围。 因此，产生p型透明导电材料。 该p型透明导电氧化物不仅具有高的电子空穴漂移速度，低电阻率，而且在可见光波长范围内也达到88％的透射率，因此非常适用于太阳能电池。

公开(公告)号：US20130130609A1

公开(公告)日：2013-05-23

申请号：US13337785

申请日：2011-12-27

申请人： Chia-Hsiang Chen

发明人： Chia-Hsiang Chen

IPC分类号： F24F11/04 ,  F24F11/053 ,  H05K5/02 ,  F24F7/007

CPC分类号： H05K7/20745 ,  H05K7/20836

摘要： A fan control system and a method thereof are provided. The fan control system is suited for a plurality of racks placed in an accommodation space. The fan control system includes a plurality of fan units and a fan control device. Each of the fan units is respectively disposed on each of the racks, and the fan units are arranged according to at least one air flow direction. The fan control device drives the fan units according to a driving sequence. In other words, the fan control device circularly and sequentially drives the fan units according to an order of the fan units. Thus, the fan control system maintains movement of air flow without driving all the fan units at the same time, so that the racks placed in the accommodation space are cooled efficiently and the required electric power is reduced.

摘要翻译： 提供了一种风扇控制系统及其方法。 风扇控制系统适用于放置在容纳空间中的多个机架。 风扇控制系统包括多个风扇单元和风扇控制装置。 每个风扇单元分别设置在每个机架上，并且风扇单元根据至少一个空气流动方向布置。 风扇控制装置根据驱动顺序驱动风扇单元。 换句话说，风扇控制装置根据风扇单元的顺序循环地依次驱动风扇单元。 因此，风扇控制系统保持空气流动，而不会同时驱动所有的风扇单元，使得放置在容纳空间中的搁架被有效地冷却并且所需的电力减小。

公开(公告)号：US20130127517A1

公开(公告)日：2013-05-23

申请号：US13337816

申请日：2011-12-27

申请人： Chia-Hsiang Chen

发明人： Chia-Hsiang Chen

IPC分类号： H03K17/16

CPC分类号： H03K5/1254

摘要： A debounce apparatus and a method thereof are provided, which includes a debounce module, a register and a timer. The debounce module receives an input signal and eliminates a bounce phenomenon of the input signal within a transient-time of the state-changing of the input signal to produce a debounce signal. The register outputs an output signal according to the value stored in the register. When the input signal changes its state, the timer starts time-counting according to a counting-value of settling-time; when the debounce signal changes its state, the timer recounts time; and when time-counting is ended and when the value corresponding to the debounce signal is different from the register's value, the register's value is updated by the value corresponding to the debounce signal. In this way, the apparatus can eliminate the system misjudgement problem caused by occurred voltage level errors in the stable state.

摘要翻译： 提供一种去抖动装置及其方法，其包括去抖模块，寄存器和定时器。 去抖模块在输入信号的状态变化的瞬态时间内接收输入信号并消除输入信号的反弹现象以产生去抖动信号。 寄存器根据存储在寄存器中的值输出输出信号。 当输入信号改变其状态时，定时器根据建立时间的计数值开始计时; 当去抖信号改变其状态时，定时器重新计时; 并且当计时结束并且当与去抖动信号相对应的值与寄存器的值不同时，寄存器的值被更新为对应于去抖动信号的值。 以这种方式，该装置可以消除在稳定状态下由发生的电压电平误差引起的系统误判问题。

公开(公告)号：US07632694B2

公开(公告)日：2009-12-15

申请号：US11375336

申请日：2006-03-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

公开(公告)号：US20090229080A1

公开(公告)日：2009-09-17

申请号：US12077107

申请日：2008-03-17

申请人： Chia-Hsiang Chen

发明人： Chia-Hsiang Chen

IPC分类号： E05D3/04 ,  E05D7/00 ,  E05D11/06

CPC分类号： H04N5/2251 ,  E05D3/10 ,  E05D11/1078 ,  E05Y2900/606 ,  Y10T16/53845 ,  Y10T16/5453

摘要： An automated hinge assembly has at least two leaves and a driving member. The leaves respectively connect securely to a cover and a body of a portable electronic device and are connected pivotally together. The driving member is mounted between the leaves and has a resilient element, a stationary bracket and a sliding bracket. The resilient element provides a force to automatically pivot a moving leaf from a stationary leaf. The stationary bracket has at least one inclined surface formed circularly around a central axis. The sliding bracket is pushed by the resilient element and has at least one protrusion corresponding to and abutting the inclined surface of the stationary bracket, thereby generating a torque to drive the leaf connected to the stationary bracket to rotate relative to another leaf.

摘要翻译： 自动铰链组件具有至少两个叶片和驱动构件。 叶片分别牢固地连接到便携式电子设备的盖和主体，并且枢转地连接在一起。 驱动构件安装在叶片之间并且具有弹性元件，固定支架和滑动支架。 弹性元件提供力以自动地将活动叶片从固定叶片枢转。 固定支架具有围绕中心轴线圆形形成的至少一个倾斜表面。 滑动支架由弹性元件推动，并且具有至少一个与固定支架的倾斜表面对应并邻接固定支架的突起，从而产生一个转矩，以驱动连接到固定支架的叶片相对于另一个叶片旋转。

公开(公告)号：US07536749B2

公开(公告)日：2009-05-26

申请号：US11399832

申请日：2006-04-06

申请人： Sheng-Nan Lu ,  Hsiang-Chi Chien ,  Chia-Hsiang Chen

发明人： Sheng-Nan Lu ,  Hsiang-Chi Chien ,  Chia-Hsiang Chen

IPC分类号： E05D11/10

CPC分类号： G06F1/1681 ,  E05D11/1078 ,  E05Y2900/606 ,  G06F1/1616 ,  Y10T16/540255 ,  Y10T16/540345

摘要： A hinge includes a first sleeve and a second sleeve pivotally engaged with the first sleeve. The first sleeve has an arcuate step formed on an outer surface thereof, a neck extending from an outer surface of the arcuate step, at least one indentation formed on the arcuate step and a first upright wall formed on an end of the indentation. The second sleeve has at least one projection formed on an inner surface thereof to correspond to and be selectively received in the at least one indentation of the first sleeve so as to provide a positioning effect to the second sleeve when the at least one projection is received in the at least one indentation and a second upright wall formed on an end of the projection of the second sleeve to correspond to the first upright wall such that the first upright wall abutting the second upright wall is able to prevent excessive pivotal movement of the second sleeve relative to the first sleeve.

摘要翻译： 铰链包括第一套筒和与第一套筒枢轴接合的第二套筒。 第一套筒具有形成在其外表面上的弓形台阶，从弓形台阶的外表面延伸的颈部，形成在弓形台阶上的至少一个凹槽和形成在凹陷的端部上的第一直立壁。 第二套筒具有形成在其内表面上的至少一个突起，以对应于并且被选择性地容纳在第一套筒的至少一个凹槽中，以便当接收到至少一个突起时，为第二套筒提供定位效果 在所述至少一个压痕中，所述第二直立壁形成在所述第二套筒的所述突起的端部上，以对应于所述第一直立壁，使得邻接所述第二直立壁的所述第一直立壁能够防止所述第二竖直壁的过度的枢转运动 套筒相对于第一套筒。

公开(公告)号：US20070039134A1

公开(公告)日：2007-02-22

申请号：US11399832

申请日：2006-04-06

申请人： Sheng-Nan Lu ,  Hsiang-Chi Chien ,  Chia-Hsiang Chen

发明人： Sheng-Nan Lu ,  Hsiang-Chi Chien ,  Chia-Hsiang Chen

IPC分类号： E05D11/10

CPC分类号： G06F1/1681 ,  E05D11/1078 ,  E05Y2900/606 ,  G06F1/1616 ,  Y10T16/540255 ,  Y10T16/540345

摘要： A hinge includes a first sleeve and a second sleeve pivotally engaged with the first sleeve. The first sleeve has an arcuate step formed on a peripheral edge thereof, a neck extending from an inner periphery of the arcuate step, at least one indentation defined in the arcuate step and a first right angle defined at an intersection between the arcuate step and the peripheral edge. The second sleeve has at least one projection formed on a peripheral edge thereof to correspond to and be selectively received in the at least one indentation of the first sleeve so as to provide a positioning effect to the second sleeve when the at least one projection is received in the at least one indentation and a second right angle defined in the peripheral edge of the second sleeve to correspond to the first right angle such that a wall defining the first right angle abutting a wall defining the second right angle is able to prevent excessive pivotal movement of the second sleeve relative to the first sleeve.

摘要翻译： 铰链包括第一套筒和与第一套筒枢轴接合的第二套筒。 第一套筒具有形成在其圆周边缘上的弓形台阶，从弓形台阶的内周延伸的颈部，在弓形台阶中限定的至少一个凹槽和限定在弧形台阶和 外围边缘。 第二套筒具有形成在其周缘上的至少一个突起，以对应于并且被选择性地容纳在第一套筒的至少一个凹部中，以便当接收至少一个突起时，为第二套筒提供定位效果 在所述第二套筒的周缘中限定的至少一个压痕和第二直角中，以对应于所述第一直角，使得限定所述第一直角的壁邻接限定所述第二直角的壁能够防止过度的枢转 第二套筒相对于第一套筒的运动。

公开(公告)号：US20050067094A1

公开(公告)日：2005-03-31

申请号：US10729944

申请日：2003-12-09

申请人： Jyh-Luen Chen ,  Wen-Tung Wang ,  Shuo-Wei Liang ,  Chia-Hsiang Chen

发明人： Jyh-Luen Chen ,  Wen-Tung Wang ,  Shuo-Wei Liang ,  Chia-Hsiang Chen

IPC分类号： B32B37/20 ,  B32B38/00 ,  G02F1/1333 ,  G02F1/1341 ,  B32B31/00

CPC分类号： B32B37/20 ,  B32B38/0004 ,  B32B2037/243 ,  B32B2038/042 ,  B32B2457/20 ,  G02F1/133305 ,  G02F1/133365 ,  G02F1/1341 ,  Y10T156/1052 ,  Y10T156/1074 ,  Y10T156/1084 ,  Y10T156/1085 ,  Y10T156/1309

摘要： A process for fabricating passive plastic displays, comprising the steps of: adopting a roll-to-roll coating machine for fabricating a bottom substrate having a fist patterned conducting line, fabricating a top substrate having a second patterned conducting line and an active area of polymeric liquid crystal on the surface of the top substrate by means of a roll-to-roll coating machine, and sealing the top and the bottom substrates by means of a roll-to-roll coating machine to form a plurality of display panels. Due to the continuous fabrication of the present invention with the low-cost apparatuses, applications of the plastic displays in the low-end products can be accelerated.

摘要翻译： 一种用于制造无源塑料显示器的方法，包括以下步骤：采用辊对辊涂布机来制造具有第一图案化导电线的底部衬底，制造具有第二图案化导电线的顶部衬底和聚合物的有源区域 通过辊对辊涂布机在顶部基板的表面上形成液晶，并通过辊对辊涂布机密封顶部和底部基板以形成多个显示面板。 由于利用低成本设备连续制造本发明，可以加速低端产品中的塑料显示器的应用。

公开(公告)号：US6004864A

公开(公告)日：1999-12-21

申请号：US30195

申请日：1998-02-25

申请人： Ji-Chung Huang ,  Han-Liang Tseng ,  Chia-Hsiang Chen ,  Kuo-Sheng Chuang

发明人： Ji-Chung Huang ,  Han-Liang Tseng ,  Chia-Hsiang Chen ,  Kuo-Sheng Chuang

IPC分类号： H01L21/761 ,  H01L21/762 ,  H01L21/76

CPC分类号： H01L21/76237 ,  H01L21/761 ,  Y10S148/05

摘要： A method is described for forming trench isolation for integrated circuits on silicon wafers by selectively doping the trench regions by ion implantation and then etching these areas with a wet chemical etch. A dopant such as boron, is implanted in a sequence of energies and doses to provide a desired trench profile of heavily doped silicon. The implanted silicon etches far more rapidly than the surrounding silicon and is readily etched out forming a trench. The concentration of dopant diminishes rapidly in the periphery of the implanted region. As the etch front approaches the periphery, the silicon etch rate, likewise diminishes and the etch can be quenched to leave a uniform surface layer of enhanced boron concentration which lines the resultant trench to form an effective channel stop. Wet etched trenches provide advantages over trenches formed by RIE including smooth rounded trench profiles which reduce stress. In addition, trenches having widths below 0.25 microns and essentially vertical walls can readily be formed.

摘要翻译： 描述了一种用于通过用离子注入选择性地掺杂沟槽区域然后用湿化学蚀刻来蚀刻这些区域来在硅晶片上形成用于集成电路的沟槽隔离的方法。 掺杂剂如硼，以能量和剂量的顺序注入，以提供重掺杂硅的期望的沟槽轮廓。 植入的硅比周围的硅蚀刻得更快，并且容易地蚀刻形成沟槽。 掺杂剂的浓度在注入区域的周围快速减少。 随着蚀刻前沿接近外围，硅蚀刻速率同样减小，蚀刻可以淬火以留下增强的硼浓度的均匀表面层，其中所述沟槽形成有效的通道阻挡。 湿蚀刻沟槽提供了优于由RIE形成的沟槽的优点，包括减少应力的平滑圆形沟槽轮廓。 此外，宽度小于0.25微米的沟槽和基本垂直的壁可容易地形成。