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186 条记录 (耗时 0.031 秒)

    Drilling and/or percussive hammer with no-load operation control
    42.
    发明授权
    Drilling and/or percussive hammer with no-load operation control 失效
    钻孔和/或冲击锤具有空载操作控制

    公开(公告)号：US08235136B2

    公开(公告)日：2012-08-07

    申请号：US11917988

    申请日：2006-06-21

    申请人： Rudolf Berger ,  Wolfgang Schmid

    发明人： Rudolf Berger ,  Wolfgang Schmid

    IPC分类号： B25D11/04

    CPC分类号： B25D11/005 ,  B25D11/125 ,  B25D17/043 ,  B25D2211/003 ,  B25D2217/0019 ,  B25D2250/035 ,  B25D2250/131 ,  B25D2250/221 ,  B25D2250/371

    摘要： A drilling and/or percussive hammer comprises a handle and a hammer housing, which can move relative to the handle and inside of which, among other things, a pneumatic spring percussive mechanism is housed. The pneumatic spring of the pneumatic spring percussive mechanism can be ventilated via a no-load operation duct that is opened and closed by a valve. The valve can be opened and closed according to a pressing force acting upon the handle. A delay device controls the valve during closing so that the valve reaches the position corresponding to the detected pressing force only with a time delay. This causes a smooth transition from the no-load operation to the percussive operation.

    摘要翻译： 钻孔和/或冲击锤包括手柄和锤壳体，其可以相对于手柄移动，并且其内部容纳有气动弹簧冲击机构。 气动弹簧冲击机构的气动弹簧可以通过由阀门打开和关闭的空载操作管道进行通风。 阀可以根据作用在手柄上的按压力而打开和关闭。 延迟装置在关闭期间控制阀门，使得阀门仅在时间延迟的情况下到达与检测到的按压力相对应的位置。 这导致从空载操作到敲击操作的平滑过渡。

    Edge emitting semiconductor laser comprising a waveguide
    44.
    发明授权
    Edge emitting semiconductor laser comprising a waveguide 有权
    包括波导的边缘发射半导体激光器

    公开(公告)号：US07813399B2

    公开(公告)日：2010-10-12

    申请号：US12240493

    申请日：2008-09-29

    申请人： Wolfgang Schmid

    发明人： Wolfgang Schmid

    IPC分类号： H01S5/00

    CPC分类号： H01S5/20 ,  H01S5/0425 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1228 ,  H01S5/16 ,  H01S5/204

    摘要： In an edge emitting semiconductor laser comprising an active layer (3) that generates laser radiation (13) and is embedded into a first waveguide layer (1), wherein the first waveguide layer (1) is arranged between a first cladding layer (4) and a second cladding layer (5) and is delimited by side facets (9) of the semiconductor laser in a lateral direction, a second waveguide layer (2), into which no active layer is embedded, adjoins the second cladding layer (5), the second waveguide layer (2) being optically coupled to the first waveguide layer (1) at least in partial regions (10, 11), and a third cladding layer (6) is arranged at a side of the second waveguide layer (2) that is remote from the first waveguide layer (1).

    摘要翻译： 在包括产生激光辐射（13）并嵌入第一波导层（1）的有源层（3）的边缘发射半导体激光器中，其中第一波导层（1）被布置在第一覆层（4） 和第二覆层（5），并且由横向方向的半导体激光器的侧面（9）界定，没有有源层嵌入的第二波导层（2）与第二覆层（5）相邻， ，所述第二波导层（2）至少在部分区域（10,11）中光耦合到所述第一波导层（1），并且第三覆层（6）布置在所述第二波导层（2）的一侧 ），其远离第一波导层（1）。

    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME
    45.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号：US20090029496A1

    公开(公告)日：2009-01-29

    申请号：US12240147

    申请日：2008-09-29

    申请人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    发明人： Wolfgang Schmid ,  Klaus Streubel ,  Norbert Linder

    IPC分类号： H01L21/02

    CPC分类号： H01S5/14 ,  H01S5/18308 ,  H01S5/2072

    摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译： 本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直 发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

    Light-Emitting Diode Chip
    46.
    发明申请
    Light-Emitting Diode Chip 有权
    发光二极管芯片

    公开(公告)号：US20080142780A1

    公开(公告)日：2008-06-19

    申请号：US11578657

    申请日：2005-04-14

    申请人： Stefan Bader ,  Wolfgang Schmid

    发明人： Stefan Bader ,  Wolfgang Schmid

    IPC分类号： H01L29/06

    CPC分类号： H01L33/405 ,  H01L33/465 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： A thin-film light-emitting diode chip, in which the distance between a mirror layer (4) and a light-generating active zone (3) is set in such a way that a radiation emitted by the active zone (3) interferes with a light reflected from the mirror layer (4), the internal quantum efficiency of the active zone (3) being influenced by this interference and the emission characteristic of the active zone (3) of at least one preferred direction thereby being obtained.

    摘要翻译： 一种薄膜发光二极管芯片，其中镜面层（4）和发光活性区域（3）之间的距离被设置成使得由活性区域（3）发射的辐射干扰 从镜面层（4）反射的光，活性区域（3）的内部量子效率受到该干涉的影响，从而得到至少一个优选方向的有源区域（3）的发射特性。

    Optically Pumped Semiconductor Device
    47.
    发明申请
    Optically Pumped Semiconductor Device 有权
    光泵浦半导体器件

    公开(公告)号：US20080080582A1

    公开(公告)日：2008-04-03

    申请号：US11579196

    申请日：2005-04-11

    申请人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Christian Karnutsch ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/183 ,  H01S5/026

    CPC分类号： H01S5/18305 ,  H01S5/026 ,  H01S5/041 ,  H01S5/141 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18388 ,  H01S5/32341

    摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.

    摘要翻译： 一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源， 在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。 泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层 （2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场 垂直发射极层（3）被抑制。

    Hollow Piston Hammer Device with Air Equilibration and Idle Openings
    48.
    发明申请
    Hollow Piston Hammer Device with Air Equilibration and Idle Openings 失效
    空气平衡和空转的空心活塞锤装置

    公开(公告)号：US20080073096A1

    公开(公告)日：2008-03-27

    申请号：US11930839

    申请日：2007-10-31

    申请人： Rudolf Berger ,  Wolfgang Schmid

    发明人： Rudolf Berger ,  Wolfgang Schmid

    IPC分类号： B23B45/16 ,  B21J5/00

    CPC分类号： B25D11/125 ,  B25D11/005 ,  B25D2250/035 ,  B25D2250/131

    摘要： An air spring hammer device comprises a drive piston, moving axially back and forth, with a front face of hollow embodiment and a hammer piston moving in said hollow. A ventilation slot is embodied in a guide wall of the drive piston. The drive piston may be guided in a guide tube. The guide tube comprises several idle openings. A moving control element is arranged on the exterior of the guide tube, in which control openings, corresponding to the idle openings, are provided. In an idle operating mode, the control element is in an open position, via which the ventilation slot, the idle openings and the control openings can be brought into connection with the environment.

    摘要翻译： 空气弹簧锤装置包括驱动活塞，其轴向前后移动，中空实施例的前表面和在所述中空部中移动的锤塞活塞。 在驱动活塞的引导壁中具有通风槽。 驱动活塞可以在导管中被引导。 导管包括若干空闲开口。 移动控制元件设置在引导管的外部，其中提供对应于空闲开口的控制开口。 在空闲操作模式中，控制元件处于打开位置，通风槽，空闲开口和控制开口可通过该位置与环境相连。

    Semiconductor laser and optically pumped semiconductor device
    50.
    发明授权
    Semiconductor laser and optically pumped semiconductor device 有权
    半导体激光器和光泵浦半导体器件

    公开(公告)号：US07050471B2

    公开(公告)日：2006-05-23

    申请号：US10791055

    申请日：2004-03-01

    申请人： Peter Brick ,  Tony Albrecht ,  Norbert Linder ,  Wolfgang Schmid

    发明人： Peter Brick ,  Tony Albrecht ,  Norbert Linder ,  Wolfgang Schmid

    IPC分类号： H01S5/00 ,  H01S3/04

    CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/101 ,  H01S5/105 ,  H01S5/141 ,  H01S5/18319 ,  H01S5/4056

    摘要： A semiconductor laser with a semiconductor body (1), which has a periodic arrangement of cutouts (2) or in which a period arrangement of semiconductor regions is formed, so that the radiation generated by the semiconductor laser is not capable of propagating within this periodic arrangement, the resonator (3) of the semiconductor laser being omitted from the periodic arrangement in the lateral direction. Furthermore, an optically pumped semiconductor device is disclosed with a vertical emitter (13) comprising a quantum well structure (7), which is pumped by means of a semiconductor laser of this type or into which the pump radiation of a pump radiation source is coupled by means of a corresponding waveguide (22).

    摘要翻译： 一种具有半导体本体（1）的半导体激光器，其具有切口（2）的周期性布置或其中形成半导体区域的周期布置，使得由半导体激光器产生的辐射不能在该周期性范围内传播 在横向上从周期性布置中省略了半导体激光器的谐振器（3）。 此外，公开了一种具有垂直发射器（13）的光学泵浦半导体器件，该垂直发射器（13）包括量子阱结构（7），该量子阱结构（7）借助于这种类型的半导体激光器泵浦，或者泵浦辐射源的泵浦辐射耦合到该半导体激光器 借助于相应的波导（22）。