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129 条记录 (耗时 0.035 秒)

    Method for manufacturing iron silicide nano-wires
    41.
    发明授权
    Method for manufacturing iron silicide nano-wires 有权
    铁硅化物纳米线的制造方法

    公开(公告)号：US08119089B2

    公开(公告)日：2012-02-21

    申请号：US12291320

    申请日：2008-11-06

    申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： C01B21/068

    CPC分类号： C01G49/00 ,  B82Y30/00 ,  C01B33/06 ,  C01P2002/72 ,  C01P2004/16 ,  C01P2004/64

    摘要： A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.

    摘要翻译： 制造铁硅化物纳米线的方法包括以下步骤。 首先，提供铁物体和生长装置，并且生长装置包括加热装置和反应室。 其次，把铁物放入反应室。 第三，将含硅气体引入反应室。 最后，将反应室加热至600〜1200℃

    Method of manufacturing silicon nano-structure
    42.
    发明授权
    Method of manufacturing silicon nano-structure 有权
    硅纳米结构的制造方法

    公开(公告)号：US07888271B2

    公开(公告)日：2011-02-15

    申请号：US12291301

    申请日：2008-11-06

    申请人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Hai-Lin Sun ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L21/31

    CPC分类号： C30B29/60 ,  B82Y10/00 ,  B82Y30/00 ,  C30B29/06 ,  Y10S438/903 ,  Y10S977/855 ,  Y10S977/857

    摘要： A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.

    摘要翻译： 一种制造硅纳米结构的方法，该方法包括以下步骤。 首先，提供增长的衬底和生长装置，该生长装置包括加热装置和反应室。 其次，将生长的基材和一定数量的催化剂分别置于反应室中。 第三，将含硅气体和氢气引入反应室。 最后，将反应室加热到500〜1100℃

    Mobile phone
    47.
    发明申请
    Mobile phone 有权
    移动电话

    公开(公告)号：US20100048254A1

    公开(公告)日：2010-02-25

    申请号：US12583158

    申请日：2009-08-13

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Liang Liu ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Liang Liu ,  Shou-Shan Fan

    IPC分类号： H04M1/00

    CPC分类号： H04M1/0266 ,  H04M2250/22

    摘要： A mobile phone includes a body defining a display panel, and a touch panel. The body further includes a communicating system received therein. The touch panel is disposed on a surface of the display panel. The touch panel includes at least a carbon nanotube layer. The carbon nanotube layer includes a carbon nanotube film.

    摘要翻译： 手机包括限定显示面板的主体和触摸面板。 身体还包括其中接收的通信系统。 触摸面板设置在显示面板的表面上。 触摸面板至少包括碳纳米管层。 碳纳米管层包括碳纳米管膜。

    Thin film transistor
    49.
    发明申请
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US20090321718A1

    公开(公告)日：2009-12-31

    申请号：US12384238

    申请日：2009-04-02

    申请人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Chang-Hong Liu ,  Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L29/786

    CPC分类号： H01L51/0558 ,  B82Y10/00 ,  H01L51/0012 ,  H01L51/0013 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/0545

    摘要： A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The drain electrode is spaced from the source electrode. The semiconducting layer includes a carbon nanotube structure comprised of carbon nanotubes. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer. The carbon nanotube structure is connected to both the source electrode and the drain electrode, and an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees.

    摘要翻译： 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 漏电极与源电极间隔开。 半导体层包括由碳纳米管构成的碳纳米管结构。 栅电极通过绝缘层与源电极，漏电极和半导体层绝缘。 碳纳米管结构与源电极和漏电极连接，并且在碳纳米管结构的每个碳纳米管和半导体层的表面之间存在角度，角度范围为约0度至约15度。

    Thin film transistor panel
    50.
    发明申请
    Thin film transistor panel 审中-公开
    薄膜晶体管面板

    公开(公告)号：US20090302324A1

    公开(公告)日：2009-12-10

    申请号：US12384244

    申请日：2009-04-02

    申请人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    发明人： Kai-Li Jiang ,  Qun-Qing Li ,  Shou-Shan Fan

    IPC分类号： H01L33/00

    CPC分类号： H01L51/0545 ,  B82Y10/00 ,  H01L27/1214 ,  H01L27/3262 ,  H01L51/0048 ,  H01L51/0541 ,  H01L2251/5338

    摘要： A thin film transistor panel includes an insulating substrate. The insulating substrate includes a number of parallel source lines, a number of parallel gate lines crossed with the source lines, and a number of girds defined by the source lines and the gate lines. Each of the girds includes a pixel electrode and a thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, and a gate electrode. The source electrode is connected with one of the source lines defining the grid. The drain electrode is spaced from the source electrode and connected with the pixel electrode. The semiconducting layer is connected with the source electrode and the drain electrode. The semiconducting layer includes a semiconducting carbon nanotube layer. The gate electrode is connected with one of the gate lines defining the grid.

    摘要翻译： 薄膜晶体管面板包括绝缘基板。 绝缘基板包括多条平行的源极线，与源极线交叉的多个平行栅极线以及由源极线和栅极线限定的多个线。 每个网格包括像素电极和薄膜晶体管。 薄膜晶体管包括源电极，漏电极，半导体层和栅电极。 源电极与限定栅格的源极线之一连接。 漏极与源电极间隔开并与像素电极连接。 半导体层与源电极和漏电极连接。 半导电层包括半导体碳纳米管层。 栅电极与限定栅格的栅极线之一连接。