公开(公告)号：US08716835B2

公开(公告)日：2014-05-06

申请号：US13124873

申请日：2009-10-16

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/66 ,  H01L29/737 ,  H01L29/20

CPC分类号： H01L29/7371 ,  H01L29/0649 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66318

摘要： A bipolar transistor is provided with an emitter layer, a base layer and a collector layer. The emitter layer is formed above a substrate and is an n-type conductive layer including a first nitride semiconductor. The base layer is formed on the emitter layer and is a p-type conductive including a second nitride semiconductor. The collector layer is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed such that a crystal growth direction to the substrate surface is parallel to a substrate direction of [000-1]. The third nitride semiconductor contains InycAlxcGa1-xc-ycN (0•xc•1, 0•yc•1, 0

摘要翻译： 双极晶体管设置有发射极层，基极层和集电极层。 发射极层形成在衬底之上，并且是包括第一氮化物半导体的n型导电层。 基极层形成在发射极层上，是包含第二氮化物半导体的p型导体。 集电极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得到基板表面的晶体生长方向平行于[000-1]的基板方向。 第三氮化物半导体含有InycAlxcGa1-xc-ycN（0·xc·1,0,0·yc·1,0,0cc·yc·1）。 第三氮化物半导体中的表面侧的a轴长度比基板侧的a轴长短。

公开(公告)号：US08716755B2

公开(公告)日：2014-05-06

申请号：US13553759

申请日：2012-07-19

申请人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

发明人： Takashi Inoue ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/778 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/432 ,  H01L29/517 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer.

摘要翻译： 在帽层和阻挡层之间的界面处产生压缩应变，并且在沟道层和缓冲层之间的界面处产生压缩应变，并且在阻挡层和沟道层之间的界面处产生拉伸应变。 因此，负电荷高于帽层和阻挡层之间的界面处的正电荷以及沟道层与缓冲层之间的界面，而正电荷高于阻挡层和沟道之间的界面处的负电荷 。 沟道层具有第一层，第二层和第三层的堆叠层结构。 第二层比第一层和第三层具有更高的电子亲和力。

公开(公告)号：US08674407B2

公开(公告)日：2014-03-18

申请号：US12919640

申请日：2009-03-12

申请人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

发明人： Yuji Ando ,  Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

IPC分类号： H01L29/66

CPC分类号： H01L29/7783 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/518 ,  H01L29/7785

摘要： The present invention provides a semiconductor device having such a structure formed by sequentially laminating a lower barrier layer composed of lattice-relaxed AlxGa1-xN (0≦x≦1), a channel layer composed of InyGa1-yN (0≦y≦1) with compressive strain and a contact layer composed of AlzGa1-zN (0≦z≦1), wherein a two-dimensional electron gas is produced in the vicinity of an interface of said InyGa1-yN channel layer with said AlzGa1-zN contact layer; a gate electrode is formed so as to be embedded in the recessed portion with intervention of an insulating film, which recessed portion is formed by removing a part of said AlzGa1-zN contact layer by etching it away until said InyGa1-yN channel layer is exposed; and, ohmic electrodes are formed on the AlzGa1-zN contact layer. Thus, the semiconductor device has superior uniformity and reproducibility of the threshold voltage while maintaining a low gate leakage current, and is also applicable to the enhancement mode type.

摘要翻译： 本发明提供一种具有这样的结构的半导体器件，该半导体器件通过依次层叠由晶格弛豫的Al x Ga 1-x N（0 @ x @ 1）构成的下阻挡层，由InyGa1-yN（0 @ y @ 1） 具有压应变和由Al z Ga 1-z N（0 @ z @ 1）组成的接触层，其中在所述In y Ga 1-y N沟道层与所述Al z Ga 1-z N接触层的界面附近产生二维电子气; 通过介入绝缘膜形成嵌入在凹陷部分中的栅电极，该凹陷部分通过蚀刻除去所述AlzGa1-zN接触层的一部分而形成，直到所述In y Ga 1-y N沟道层暴露 ; 并且在AlzGa1-zN接触层上形成欧姆电极。 因此，半导体器件在保持低栅极漏电流的同时具有优异的阈值电压的均匀性和再现性，并且也适用于增强型。

公开(公告)号：US08525229B2

公开(公告)日：2013-09-03

申请号：US12299542

申请日：2007-05-07

申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Takashi Inoue ,  Tatsuo Nakayama ,  Hironobu Miyamoto

IPC分类号： H01L29/205 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316

摘要： A semiconductor device includes a channel layer, an electron-supplying layer provided on the channel layer, a cap layer provided on the electron-supplying layer and creating lattice match with the channel layer, and ohmic electrodes provided on the cap layer. The cap layer has a composition of (InyAl1-y)zGa1-zN (0≦y≦1, 0≦z≦1). The z for such cap layer monotonically decreases as being farther away from the electron-supplying layer.

摘要翻译： 半导体器件包括沟道层，设置在沟道层上的电子供给层，设置在电子供给层上并与沟道层形成晶格匹配的盖层以及设置在盖层上的欧姆电极。 盖层具有（In y Al 1-y）z Ga 1-z N（0 @ y @ 1，0 @ z @ 1）的组成。 这种盖层的z随着远离电子供应层而单调减小。

公开(公告)号：US20120187800A1

公开(公告)日：2012-07-26

申请号：US13437299

申请日：2012-04-02

申请人： Tadashi Yoda ,  Toshio Nishimura ,  Masanaga Nishikawa ,  Yasuhiro Okamoto ,  Tomoyuki Yuasa

发明人： Tadashi Yoda ,  Toshio Nishimura ,  Masanaga Nishikawa ,  Yasuhiro Okamoto ,  Tomoyuki Yuasa

IPC分类号： H01L41/047 ,  H01L41/09

CPC分类号： H02N2/025 ,  H01L41/313

摘要： An electromechanical conversion element having high connection reliability and an actuator equipped with the electromechanical conversion element. The electromechanical conversion element includes: a displacement part capable of expanding and contracting by application of voltage and having electrode forming faces and an adhesion face which are disposed adjacent to each other; and external electrodes on the electrode forming faces, in which lead electrodes for applying voltage to the displacement part are bonded to bonding regions provided in the external electrodes, and a driven member capable of being driven by the expansion and contraction of the displacement part is bonded to the adhesion face by an adhesive. The electromechanical conversion element further includes bleed flow blocking parts on the electrode forming faces at points closer to the adhesion face than ends of the bonding regions located on the same side as the adhesion face.

摘要翻译： 具有高连接可靠性的机电转换元件和配备有机电转换元件的致动器。 机电转换元件包括：能够通过施加电压而伸缩的位移部件，并且具有彼此相邻设置的电极形成面和粘合面; 并且电极形成面上的外部电极，其中向位移部分施加电压的引线电极被接合到设置在外部电极中的接合区域，并且能够通过位移部分的膨胀和收缩而被驱动的从动构件被接合 通过粘合剂粘附到粘合面上。 机电转换元件还包括在与粘合面位于同一侧的接合区域的端部处的电极形成面处的渗出阻流部分，其比靠近粘合面的点处。

公开(公告)号：US20120094126A1

公开(公告)日：2012-04-19

申请号：US13262788

申请日：2010-04-05

申请人： Atsushi Muramatsu ,  Kiyoshi Kanie ,  Atsuki Terabe ,  Yasuhiro Okamoto ,  Hideto Mizutani ,  Satoru Sueda ,  Hirofumi Takahashi

发明人： Atsushi Muramatsu ,  Kiyoshi Kanie ,  Atsuki Terabe ,  Yasuhiro Okamoto ,  Hideto Mizutani ,  Satoru Sueda ,  Hirofumi Takahashi

IPC分类号： B32B5/16 ,  H01L41/24

CPC分类号： H01L41/1873 ,  C01D1/02 ,  C01G33/006 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/41 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3255 ,  C04B2235/52 ,  H01L41/317 ,  Y10T428/2982

摘要： Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): NaxK(1-x)NbO3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na+ ion and K+ ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

摘要翻译： 公开了一种在液相体系中生产细粒状碱金属铌酸盐的方法，其中可以控制细粒状碱金属铌酸盐颗粒的尺寸和形状; 和具有受控形状和尺寸的细颗粒碱金属铌酸盐。 具体公开的是由式（1）表示的颗粒状铌酸钾钠盐的方法：NaxK（1-x）NbO 3（1），该方法包括四个具体步骤，其中含有Na +离子和K + 离子用作碱性溶液; 和具有受控形状和尺寸的铌酸钾钠颗粒。

公开(公告)号：US08057907B2

公开(公告)日：2011-11-15

申请号：US11712459

申请日：2007-03-01

申请人： Hiroyuki Yoneyama ,  Yasuhiro Okamoto

发明人： Hiroyuki Yoneyama ,  Yasuhiro Okamoto

IPC分类号： B32B25/20

CPC分类号： B32B7/02 ,  B32B23/12 ,  B32B23/20 ,  B32B27/28 ,  B32B27/283 ,  B32B27/285 ,  B32B2260/025 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/21 ,  B32B2307/412 ,  B32B2307/42 ,  B32B2307/584 ,  B32B2457/20 ,  G02B5/3058 ,  Y10T428/249972 ,  Y10T428/249973 ,  Y10T428/249974 ,  Y10T428/249991 ,  Y10T428/249992 ,  Y10T428/31663

摘要： An optical film, which comprises: a support; and a layer containing an electrically-conductive particulate material, in which an interior of the electrically-conductive particulate material is porous or hollow, wherein the optical film comprises a fluorine-containing silane compound.

摘要翻译： 一种光学膜，包括：支撑体; 以及包含导电性颗粒材料的层，其中所述导电颗粒材料的内部是多孔的或中空的，其中所述光学膜包括含氟硅烷化合物。

公开(公告)号：US20110241075A1

公开(公告)日：2011-10-06

申请号：US13124872

申请日：2009-10-16

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/045 ,  H01L29/2003

摘要： A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0≦xc≦1, 0≦yc≦1, 0

摘要翻译： 双极晶体管包括：基板; 具有p导电型的集电极和基极层，具有n导电型的发射极层。 集电极层形成在衬底上方并且包括第一氮化物半导体。 具有p型导电型的基底层形成在集电极层上，并且包括第二耐磨半导体。 具有n导电型的发射极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得相对于基板的表面的晶体生长方向与基板的[0001]方向平行。 第一氮化物半导体包括：InycAlxcGa1-xc-ycN（0＆nlE; xc＆nlE; 1,0＆amp; nlE; yc＆nlE; 1,0

公开(公告)号：US07705520B2

公开(公告)日：2010-04-27

申请号：US11890564

申请日：2007-08-07

申请人： Akira Wada ,  Yasuhiro Okamoto ,  Taketo Namikawa

发明人： Akira Wada ,  Yasuhiro Okamoto ,  Taketo Namikawa

IPC分类号： H01L41/04

CPC分类号： H02N2/025 ,  H01L41/313

摘要： There is provided a driving device 1 in which an electromechanical transducer is used and which has a high drive efficiency, having an electromechanical transducer 4 that is extended and contracted by application thereto of voltages, a drive shaft 6 having one end fixed by adhesive 5 to the electromechanical transducer 4, and a movable member 7 that is frictionally engaged on the driving shaft 6, an expression 8≧E/t≧0.48 where t (μm) is a thickness of the adhesive and E (GPa) is a modulus of longitudinal elasticity of the adhesive is satisfied by mixing into the adhesive 3, 5 particulates 10 that have diameters not smaller than 1 μm and not larger than 5 μm.

摘要翻译： 提供了一种驱动装置1，其中使用机电换能器并且具有高的驱动效率，具有通过施加电压而延伸和收缩的机电换能器4;驱动轴6，其一端通过粘合剂5固定到 机电换能器4和与驱动轴6摩擦接合的可动构件7，其中t（μm）为粘合剂的厚度，E（GPa）为纵向的模量，其值为8≥E/t≥0.48 通过将粘合剂3,5粒径不小于1μm且不大于5μm的颗粒10混合来满足粘合剂的弹性。

公开(公告)号：US20090277884A1

公开(公告)日：2009-11-12

申请号：US12392164

申请日：2009-02-25

申请人： Yoshiyuki UNO ,  Yasuhiro Okamoto ,  Tetsuomi Mohri ,  Yuji Tanaka ,  Motoki Kakui ,  Kazuo Nakamae

发明人： Yoshiyuki UNO ,  Yasuhiro Okamoto ,  Tetsuomi Mohri ,  Yuji Tanaka ,  Motoki Kakui ,  Kazuo Nakamae

IPC分类号： B23K26/00 ,  B23K26/12

CPC分类号： B23K26/127 ,  B23K26/0622 ,  B23K26/082 ,  B23K26/12 ,  B23K26/3568 ,  B23K2101/20

摘要： The present invention relates to a surface modification method allowing the surface of a subject to be more effectively modified. In a pulsed-laser device suitable for use in this surface modification method, a semiconductor laser light source and a modulator constitute a seed light source. The seed light output from the seed light source is amplified by fibers for optical amplification, and the amplified light constitutes output from the pulsed-laser device. The pulsed-laser device allows the pulse width and repetition frequency of the output pulsed-laser light to be varied independently of each other. The pulse width of the pulsed-laser light output from the pulsed-laser device is preferably not more than 10 ns, and the repetition frequency is preferably at least 50 kHz.

摘要翻译： 本发明涉及能够更有效地改变被检体表面的表面改性方法。 在适用于该表面改性方法的脉冲激光装置中，半导体激光光源和调制器构成种子光源。 从种子光源输出的种子光被用于光放大的光纤放大，并且放大的光构成了脉冲激光装置的输出。 脉冲激光器件允许输出脉冲激光的脉冲宽度和重复频率彼此独立地变化。 从脉冲激光装置输出的脉冲激光的脉冲宽度优选为10ns以下，重复频率优选为50kHz以上。