摘要:
It is an object of the invention to provide semiconductor devices which can protect privacy of consumers or holders of commercial products and control the communication range according to use, even when the semiconductor device which can exchange data without contact is mounted on the commercial products. A semiconductor device of the invention includes an element group including a plurality of transistors over a substrate; a first conductive film functioning as an antenna over the element group; a second conductive film surrounding the first conductive film; an insulating film covering the first and second end portions; and a third conductive film over the insulating film. The first conductive film is provided in the shape of a coil, and each end portion of the first conductive film is connected to the element group. First and second end portions of the second conductive film are not connected to each other.
摘要:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer; forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要:
It is an object to provide a manufacturing method of a semiconductor device with high reliability. A plurality of first semiconductor integrated circuits, a plurality of second semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, a plurality of third semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits and one of the second semiconductor integrated circuits, and a plurality of fourth semiconductor integrated circuits each of which is arranged to be adjacent to one of the first semiconductor integrated circuits, one of the second semiconductor integrated circuits, and one of the third semiconductor integrated circuits are formed over a first substrate. The first semiconductor integrated circuits are transferred to a second substrate. A first protective layer is formed to cover the first semiconductor integrated circuits and a surface of the second substrate in the periphery of the first semiconductor integrated circuits. The second substrate and the first protective layer are divided so that the plurality of the first semiconductor integrated circuits is divided into individual pieces and part of the second substrate remains in the periphery of the first semiconductor integrated circuits. Accordingly, a semiconductor device having the first semiconductor integrated circuit is manufactured.
摘要:
The manufacturing method of a substrate having a conductive layer has the steps of: forming an inorganic insulating layer over a substrate; forming an organic resin layer with a desired shape over the inorganic insulating layer, forming a low wettability layer with respect to a composition containing conductive particles on a first exposed portion of the inorganic insulating layer; removing the organic resin layer; and coating a second exposed portion of the inorganic insulating layer with a composition containing conductive particles and baking, thereby forming a conductive layer.
摘要:
An information processing apparatus which comprises a recording section for recording information in a removable recording medium, a switch, a computer, a power supply section for supplying power to the recording section and the computer, and an operating system which is software for controlling the computer. In which, the power supply section controls power supply to the recording section and the computer individually, only the power supply to the recording section is controlled ON/OFF corresponding to a state of the switch. The operating system conducts a processing based on a presumption that the recording section is not connected to. Under the above-described configuration, when there is no access made to the recording section, the power supply is disconnected not only to the recording section but also to a constituent part used for making access to the recording section. Thus the advantage of low-power operation is further enhanced.
摘要:
A surface which has excellent adhesivity to paint, good corrosion resistance, and low friction may be obtained on drawn and iron tin plated cans by spraying the can surface for a time between 5 and 60 seconds at a temperature between 40.degree. and 60.degree. C. with an aqueous treating liquid having a pH between 4 and 6 and comprising (i) orthophosphoric acid and/or condensed phosphoric acids and (ii) a concentration of at least 0.1 w/o of a water soluble oligomer according to the general formula: ##STR1## wherein n is a number with a value between 10 and 30 and each of X and Y independently represents hydrogen or a group Z, wherein Z has a chemical composition conforming to the general formula: ##STR2## wherein each of R.sub.1 and R.sub.2 is an alkyl or hydroxyalkyl group having from 1 to 5 carbon atoms, except that at least 25% of the total of all the X and Y groups in the oligomer are Z rather than hydrogen; and drying the surface thus sprayed, optionally after having first rinsed the sprayed surface with water.
摘要:
To impart an excellent corrosion resistance and adherence to the surface of tinplate while avoiding the production of sludge in the treatment bath during continuous treatment, a bath is used that contains phosphate ions, from 0.1 to 5.0 g/L of chelating agent, and tin ions; has a pH from 2.0 to 4.5; is essentially free of oxidizing agent and ferric ion; and has an oxidation-reduction potential of .ltoreq.450 mV more oxidizing than a silver-saturated silver chloride reference electrode.
摘要:
An aqueous alkaline cleaner for aluminum has a pH in the range from 10.0-12.0 and contains:(A) from 0.5 to 10.0 g/L of an alkali builder component;(B) from 0.5 to 10.0 g/L of aminoalkyl- and/or hydroxyalkyldi-phosphonic acids and/or their water soluble salts;(C) from 0.1 to 3.0 g/L of an aluminum ion sequestering agent component; and(D) from 0.5 to 5.0 g/L of a surfactant component.Cleaning aluminum and aluminum alloy with such a cleaner generates an excellent surface condition with respect to de-smutting performance, water wettability, avoidance of black smut production, blackening, and paint adherence at least as good as that achieved with conventional acid cleaners, without requiring any acid wash.
摘要:
A corrosion resistant film with a low coefficient of friction that facilitates automatic conveying can be formed on the surface of tin-plated steel or of aluminum, particularly DI cans of one of these types of metal, by contacting the aluminum or the tin plated steel with an aqueous liquid composition having a pH in the range from 2.0 to 6.5 and containing:(A) from 1 to 30 g/L of phosphate ions,(B) from 0.1 to 10 g/L of condensed phosphate ions, and(C) from 0.1 to 20 g/L as solids of water-soluble polymers of N-vinylphenol substituted on the phenolic rings with dialkylaminomethyl groups.
摘要:
Problems with previously known aqueous acidic rinsing solutions for aluminum after shaping while using surface lubricants are avoided by use of a solution which contains water and (A) orthophosphoric acid in an amount to give a stoichiometric equivalent of 3.0 to 50 g/L as PO.sub.4.sup.-3, (B) an aluminum ion sequestrant component in an amount of 0.01 to 10.0 g/L; and (C) 20 to 170 ppm of ferric ion. The ferric ions act to inhibit corrosion of the stainless steel process equipment. Preferably the solution also contains 0.1 to 1.0 g/L of H.sub.2 O.sub.2, NO.sub.2.sup.-1 ions, or a mixture thereof to reoxidize ferrous ions formed by reduction of ferric ions during use of the solution and thus maintain the concentration of ferric ions above 20 ppm at all times. The solution may also contain surfactant and up to 10 g/L of dissolved aluminum ions.